CN114690557B - 光致抗蚀剂组合物及图案形成方法 - Google Patents

光致抗蚀剂组合物及图案形成方法

Info

Publication number
CN114690557B
CN114690557B CN202111682535.8A CN202111682535A CN114690557B CN 114690557 B CN114690557 B CN 114690557B CN 202111682535 A CN202111682535 A CN 202111682535A CN 114690557 B CN114690557 B CN 114690557B
Authority
CN
China
Prior art keywords
polymer
unsubstituted
substituted
photoresist composition
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202111682535.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN114690557A (zh
Inventor
羽贺满
李明琦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
DuPont Electronic Materials International LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC, DuPont Electronic Materials International LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of CN114690557A publication Critical patent/CN114690557A/zh
Application granted granted Critical
Publication of CN114690557B publication Critical patent/CN114690557B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C08F212/24—Phenols or alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Emergency Medicine (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Engineering & Computer Science (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
CN202111682535.8A 2020-12-31 2021-12-29 光致抗蚀剂组合物及图案形成方法 Active CN114690557B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063132686P 2020-12-31 2020-12-31
US63/132686 2020-12-31

Publications (2)

Publication Number Publication Date
CN114690557A CN114690557A (zh) 2022-07-01
CN114690557B true CN114690557B (zh) 2026-03-24

Family

ID=82138026

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111682535.8A Active CN114690557B (zh) 2020-12-31 2021-12-29 光致抗蚀剂组合物及图案形成方法

Country Status (5)

Country Link
US (1) US11940730B2 (https=)
JP (1) JP7377848B2 (https=)
KR (1) KR102711778B1 (https=)
CN (1) CN114690557B (https=)
TW (1) TW202236010A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020132749A (ja) * 2019-02-19 2020-08-31 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ポリマー、ポリマーを含んでなる半導体組成物、および半導体組成物を用いた膜の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101891612A (zh) * 2009-03-11 2010-11-24 住友化学株式会社 化合物和化学放大型正性抗蚀剂组合物

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08286384A (ja) 1995-04-14 1996-11-01 Hitachi Ltd パタン形成方法及びそれに用いるフォトレジスト材料
US7147983B1 (en) 1996-10-07 2006-12-12 Shipley Company, L.L.C. Dyed photoresists and methods and articles of manufacture comprising same
JPH10111563A (ja) 1996-10-07 1998-04-28 Hitachi Ltd パタン形成方法及びそれを用いた半導体装置の製造方法並びに感放射線組成物
US6451498B1 (en) * 1998-05-28 2002-09-17 Atotech Deutschland Gmbh Photosensitive composition
KR100549574B1 (ko) 1999-12-30 2006-02-08 주식회사 하이닉스반도체 유기 반사 방지막용 중합체 및 그의 제조방법
KR100721181B1 (ko) * 2000-06-30 2007-05-23 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100734249B1 (ko) * 2000-09-07 2007-07-02 삼성전자주식회사 축합환의 방향족 환을 포함하는 보호기를 가지는 감광성폴리머 및 이를 포함하는 레지스트 조성물
TW576859B (en) 2001-05-11 2004-02-21 Shipley Co Llc Antireflective coating compositions
US20030215736A1 (en) 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
US7361447B2 (en) * 2003-07-30 2008-04-22 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
KR101156973B1 (ko) * 2005-03-02 2012-06-20 주식회사 동진쎄미켐 유기 반사방지막 형성용 유기 중합체 및 이를 포함하는 유기 조성물
JP4905811B2 (ja) 2006-08-24 2012-03-28 Ｊｓｒ株式会社 イオンインプランテーション方法及びそれに用いる感放射線性樹脂組成物
US7838199B2 (en) * 2007-02-28 2010-11-23 Rohm And Haas Electronic Materials Llc Polymers and photoresist compositions
JP4905250B2 (ja) 2007-05-18 2012-03-28 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US7932018B2 (en) * 2008-05-06 2011-04-26 Az Electronic Materials Usa Corp. Antireflective coating composition
KR20100047046A (ko) * 2008-10-28 2010-05-07 동우 화인켐 주식회사 아이-선 화학증폭형 포지티브 레지스트 조성물 및 이를 이용한 패턴형성방법
JP5746824B2 (ja) 2009-02-08 2015-07-08 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 上塗りフォトレジストと共に使用するのに好適なコーティング組成物
EP2216683B1 (en) 2009-02-08 2018-11-14 Rohm and Haas Electronic Materials, L.L.C. Substrates coated with an antireflective composition and a photoresist
US8883407B2 (en) 2009-06-12 2014-11-11 Rohm And Haas Electronic Materials Llc Coating compositions suitable for use with an overcoated photoresist
JP5806854B2 (ja) * 2011-05-12 2015-11-10 富士フイルム株式会社 ポジ型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法及びエッチング処理を行う方法、並びに、高分子化合物
US8623589B2 (en) 2011-06-06 2014-01-07 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions and processes thereof
US8715907B2 (en) 2011-08-10 2014-05-06 International Business Machines Corporation Developable bottom antireflective coating compositions for negative resists
US8932796B2 (en) 2011-11-10 2015-01-13 International Business Machines Corporation Hybrid photoresist composition and pattern forming method using thereof
US8697336B2 (en) 2011-12-15 2014-04-15 Az Electronic Materials Usa Corp. Composition for forming a developable bottom antireflective coating
US8999624B2 (en) 2012-06-29 2015-04-07 International Business Machines Corporation Developable bottom antireflective coating composition and pattern forming method using thereof
US8900797B2 (en) 2012-09-26 2014-12-02 Az Electronic Materials (Luxembourg) S.A.R.L. Developable bottom anti-reflective coating
US9502231B2 (en) * 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
KR20140129934A (ko) 2013-04-30 2014-11-07 제일모직주식회사 광경화 조성물 및 이를 포함하는 봉지화된 장치
US9541829B2 (en) 2013-07-24 2017-01-10 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
US10040965B2 (en) 2013-11-20 2018-08-07 Osaka Organic Chemical Industry Ltd. Clear coating composition
TWI584061B (zh) * 2014-08-27 2017-05-21 羅門哈斯電子材料有限公司 多重圖案的形成方法
KR102273332B1 (ko) 2015-03-31 2021-07-06 닛산 가가쿠 가부시키가이샤 양이온 중합성 레지스트 하층막 형성 조성물
TWI758326B (zh) 2016-09-16 2022-03-21 日商日產化學工業股份有限公司 保護膜形成組成物
US10527935B2 (en) * 2016-12-31 2020-01-07 Rohm And Haas Electronic Materials Llc Radiation-sensitive compositions and patterning and metallization processes
JP7347430B2 (ja) 2018-08-21 2023-09-20 Jsr株式会社 感光性樹脂組成物、レジストパターンの形成方法、メッキ造形物の製造方法、および半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101891612A (zh) * 2009-03-11 2010-11-24 住友化学株式会社 化合物和化学放大型正性抗蚀剂组合物

Also Published As

Publication number Publication date
US20220229366A1 (en) 2022-07-21
TW202236010A (zh) 2022-09-16
KR102711778B1 (ko) 2024-09-27
US11940730B2 (en) 2024-03-26
KR20220097298A (ko) 2022-07-07
CN114690557A (zh) 2022-07-01
JP2022105327A (ja) 2022-07-13
JP7377848B2 (ja) 2023-11-10

Similar Documents

Publication Publication Date Title
US6949325B2 (en) Negative resist composition with fluorosulfonamide-containing polymer
JP4156599B2 (ja) フルオロスルホンアミド基を含んだポリマーを含むポジ型フォトレジスト組成物およびその使用方法
KR100754230B1 (ko) 방사선 민감성 공중합체, 이의 포토레지스트 조성물 및이의 심 자외선 이층 시스템
TWI673574B (zh) 輻射敏感組合物以及圖案化及金屬化方法
JP6766116B2 (ja) フォトレジストと共に使用するための下地コーティング組成物
CN106933030B (zh) 光致抗蚀剂组合物、包括光致抗蚀剂组合物的经涂布衬底和形成电子装置的方法
TWI902136B (zh) 光致抗蝕劑組成物及圖案形成方法
CN103694404A (zh) 酚聚合物以及包含该酚聚合物的光刻胶
JP2015038604A (ja) フォトレジスト組成物、コーティング基板、および電子デバイスを製造する方法
JP7806403B2 (ja) メッキ造形物の製造方法
CN114690557B (zh) 光致抗蚀剂组合物及图案形成方法
JP4440600B2 (ja) 厚膜および超厚膜対応化学増幅型感光性樹脂組成物
US6770419B2 (en) Low silicon-outgassing resist for bilayer lithography
KR100669188B1 (ko) 하이드록시페닐 공중합체 및 이를 함유하는 포토레지스트
JP6075005B2 (ja) レジスト組成物及びレジストパターンの製造方法
CN118284852A (zh) 通过湿式化学蚀刻以改善金属结构制造的组合物和方法
CN102184851B (zh) 光致抗蚀剂及其使用方法
JPH0339964A (ja) 半導体装置の製造方法及びそれに用いるパターン形成用塗布溶液
US7081326B2 (en) Negative photoresist and method of using thereof
CN119322427A (zh) 光致抗蚀剂组合物和金属化方法
CN117457484A (zh) 金属化方法
JP2024027460A (ja) パターン形成方法
TW202402722A (zh) 光活性化合物、包含其之光阻劑組成物及圖案形成方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Country or region after: U.S.A.

Address after: Massachusetts, USA

Applicant after: DuPont Electronic Materials International LLC

Address before: Massachusetts, USA

Applicant before: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Country or region before: U.S.A.

GR01 Patent grant
GR01 Patent grant