CN114556572A - 摄像元件 - Google Patents

摄像元件 Download PDF

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Publication number
CN114556572A
CN114556572A CN202080070972.1A CN202080070972A CN114556572A CN 114556572 A CN114556572 A CN 114556572A CN 202080070972 A CN202080070972 A CN 202080070972A CN 114556572 A CN114556572 A CN 114556572A
Authority
CN
China
Prior art keywords
pixel electrode
pixel
electrode
photoelectric conversion
wavelength band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080070972.1A
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English (en)
Chinese (zh)
Inventor
宍戸三四郎
留河优子
町田真一
土居隆典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN114556572A publication Critical patent/CN114556572A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/131—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202080070972.1A 2019-10-30 2020-09-28 摄像元件 Pending CN114556572A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-197384 2019-10-30
JP2019197384 2019-10-30
PCT/JP2020/036495 WO2021084994A1 (ja) 2019-10-30 2020-09-28 撮像素子

Publications (1)

Publication Number Publication Date
CN114556572A true CN114556572A (zh) 2022-05-27

Family

ID=75715079

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080070972.1A Pending CN114556572A (zh) 2019-10-30 2020-09-28 摄像元件

Country Status (4)

Country Link
US (1) US20220217294A1 (https=)
JP (1) JPWO2021084994A1 (https=)
CN (1) CN114556572A (https=)
WO (1) WO2021084994A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022197379A2 (en) * 2021-02-01 2022-09-22 Northwestern University Wavelength converting natural vision system
WO2025088923A1 (ja) * 2023-10-26 2025-05-01 パナソニックＩｐマネジメント株式会社 撮像装置およびカメラシステム
WO2025197482A1 (ja) * 2024-03-19 2025-09-25 パナソニックＩｐマネジメント株式会社 撮像装置及びカメラシステム

Citations (5)

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JPH03148175A (ja) * 1989-11-02 1991-06-24 Fujitsu Ltd 赤外線検知装置
JP2007066962A (ja) * 2005-08-29 2007-03-15 Fujifilm Corp カラー固体撮像装置及びデジタルカメラ
CN104517980A (zh) * 2013-10-02 2015-04-15 采钰科技股份有限公司 成像装置
US20150312492A1 (en) * 2014-04-24 2015-10-29 Samsung Electronics Co., Ltd. Image data processing device having image sensor with skewed pixel structure
KR20180040556A (ko) * 2018-04-13 2018-04-20 삼성전자주식회사 유기 광전 변환부를 채용한 이미지 센서

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JPH0513741A (ja) * 1991-06-28 1993-01-22 Yokogawa Electric Corp 半導体光検出装置
JP2005353626A (ja) * 2004-06-08 2005-12-22 Fuji Photo Film Co Ltd 光電変換膜積層型固体撮像素子及びその製造方法
JP5180538B2 (ja) * 2007-08-27 2013-04-10 キヤノン株式会社 撮像素子及び撮像装置
WO2011055638A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5117523B2 (ja) * 2010-03-09 2013-01-16 株式会社東芝 固体撮像装置
JP5724309B2 (ja) * 2010-11-12 2015-05-27 富士通株式会社 赤外線イメージセンサ及び赤外線撮像装置
JP6079502B2 (ja) * 2013-08-19 2017-02-15 ソニー株式会社 固体撮像素子および電子機器
TWI505455B (zh) * 2013-09-27 2015-10-21 Maxchip Electronics Corp 光感測器
JP2016012642A (ja) * 2014-06-27 2016-01-21 パナソニックＩｐマネジメント株式会社 固体撮像装置及びその制御方法
WO2016002576A1 (ja) * 2014-07-03 2016-01-07 ソニー株式会社 固体撮像素子、および電子装置
US9967501B2 (en) * 2014-10-08 2018-05-08 Panasonic Intellectual Property Management Co., Ltd. Imaging device
CN111968998B (zh) * 2014-12-26 2024-12-13 松下知识产权经营株式会社 摄像装置
KR20160100569A (ko) * 2015-02-16 2016-08-24 삼성전자주식회사 이미지 센서 및 이미지 센서를 포함하는 촬상 장치
KR102701853B1 (ko) * 2015-12-14 2024-09-02 삼성전자주식회사 이미지 센서
DE102015225797B3 (de) * 2015-12-17 2017-05-04 Robert Bosch Gmbh Optischer Detektor
KR102560758B1 (ko) * 2017-01-03 2023-07-28 삼성전자주식회사 이미지 센서
JP6860390B2 (ja) * 2017-03-22 2021-04-14 キヤノン株式会社 撮像素子及びその制御方法、撮像装置、焦点検出装置及び方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03148175A (ja) * 1989-11-02 1991-06-24 Fujitsu Ltd 赤外線検知装置
JP2007066962A (ja) * 2005-08-29 2007-03-15 Fujifilm Corp カラー固体撮像装置及びデジタルカメラ
CN104517980A (zh) * 2013-10-02 2015-04-15 采钰科技股份有限公司 成像装置
US20150312492A1 (en) * 2014-04-24 2015-10-29 Samsung Electronics Co., Ltd. Image data processing device having image sensor with skewed pixel structure
KR20180040556A (ko) * 2018-04-13 2018-04-20 삼성전자주식회사 유기 광전 변환부를 채용한 이미지 센서

Also Published As

Publication number Publication date
US20220217294A1 (en) 2022-07-07
WO2021084994A1 (ja) 2021-05-06
JPWO2021084994A1 (https=) 2021-05-06

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Application publication date: 20220527