CN1144670C - Tab带载体的铜箔以及使用铜箔的tab载体带和tab带载体 - Google Patents
Tab带载体的铜箔以及使用铜箔的tab载体带和tab带载体 Download PDFInfo
- Publication number
- CN1144670C CN1144670C CNB011171944A CN01117194A CN1144670C CN 1144670 C CN1144670 C CN 1144670C CN B011171944 A CNB011171944 A CN B011171944A CN 01117194 A CN01117194 A CN 01117194A CN 1144670 C CN1144670 C CN 1144670C
- Authority
- CN
- China
- Prior art keywords
- copper foil
- layer
- band
- adhesive tape
- tab
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 128
- 239000010949 copper Substances 0.000 title claims abstract description 26
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 24
- 239000011889 copper foil Substances 0.000 claims abstract description 107
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 21
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 19
- 239000010941 cobalt Substances 0.000 claims abstract description 19
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 18
- 239000011733 molybdenum Substances 0.000 claims abstract description 18
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 claims description 16
- 238000012545 processing Methods 0.000 claims description 14
- 238000010586 diagram Methods 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 12
- 238000007788 roughening Methods 0.000 claims description 9
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000002390 adhesive tape Substances 0.000 claims 19
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 59
- 238000007747 plating Methods 0.000 description 53
- 238000012360 testing method Methods 0.000 description 32
- 230000000052 comparative effect Effects 0.000 description 23
- 239000011734 sodium Substances 0.000 description 20
- QZYDAIMOJUSSFT-UHFFFAOYSA-N [Co].[Ni].[Mo] Chemical compound [Co].[Ni].[Mo] QZYDAIMOJUSSFT-UHFFFAOYSA-N 0.000 description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 239000000126 substance Substances 0.000 description 13
- 241000080590 Niso Species 0.000 description 11
- 238000001035 drying Methods 0.000 description 11
- WURBVZBTWMNKQT-UHFFFAOYSA-N 1-(4-chlorophenoxy)-3,3-dimethyl-1-(1,2,4-triazol-1-yl)butan-2-one Chemical compound C1=NC=NN1C(C(=O)C(C)(C)C)OC1=CC=C(Cl)C=C1 WURBVZBTWMNKQT-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 239000011701 zinc Substances 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910001453 nickel ion Inorganic materials 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 229910017709 Ni Co Inorganic materials 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 229910001429 cobalt ion Inorganic materials 0.000 description 5
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 229910003267 Ni-Co Inorganic materials 0.000 description 4
- 229910003262 Ni‐Co Inorganic materials 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005868 electrolysis reaction Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- -1 molybdic acid ion Chemical class 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- DQIPXGFHRRCVHY-UHFFFAOYSA-N chromium zinc Chemical compound [Cr].[Zn] DQIPXGFHRRCVHY-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- WHDPTDWLEKQKKX-UHFFFAOYSA-N cobalt molybdenum Chemical compound [Co].[Co].[Mo] WHDPTDWLEKQKKX-UHFFFAOYSA-N 0.000 description 2
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 2
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- DDTIGTPWGISMKL-UHFFFAOYSA-N molybdenum nickel Chemical compound [Ni].[Mo] DDTIGTPWGISMKL-UHFFFAOYSA-N 0.000 description 2
- VLAPMBHFAWRUQP-UHFFFAOYSA-L molybdic acid Chemical compound O[Mo](O)(=O)=O VLAPMBHFAWRUQP-UHFFFAOYSA-L 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- YIWGJFPJRAEKMK-UHFFFAOYSA-N 1-(2H-benzotriazol-5-yl)-3-methyl-8-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carbonyl]-1,3,8-triazaspiro[4.5]decane-2,4-dione Chemical compound CN1C(=O)N(c2ccc3n[nH]nc3c2)C2(CCN(CC2)C(=O)c2cnc(NCc3cccc(OC(F)(F)F)c3)nc2)C1=O YIWGJFPJRAEKMK-UHFFFAOYSA-N 0.000 description 1
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 241000784732 Lycaena phlaeas Species 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 241001074085 Scophthalmus aquosus Species 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005088 metallography Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/384—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by plating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/04—Wires; Strips; Foils
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0307—Providing micro- or nanometer scale roughness on a metal surface, e.g. by plating of nodules or dendrites
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0723—Electroplating, e.g. finish plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12431—Foil or filament smaller than 6 mils
- Y10T428/12438—Composite
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12472—Microscopic interfacial wave or roughness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12556—Organic component
- Y10T428/12569—Synthetic resin
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12611—Oxide-containing component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12903—Cu-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12903—Cu-base component
- Y10T428/1291—Next to Co-, Cu-, or Ni-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31721—Of polyimide
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electrochemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating Methods And Accessories (AREA)
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Abstract
一种用于TAB带载体的铜箔,包括(a)有一光泽面和一无光面的铜箔;和(b)至少在光泽面上形成的包含镍、钴和钼的合金层;一种TAB载体带,包括柔性绝缘薄膜和施用在该薄膜上的用于TAB带载体的铜箔,铜箔的无光面对着该薄膜;一种TAB带载体,可通过蚀刻用于TAB带载体的铜箔形成铜导线布线图,由TAB载体带来制造。
Description
技术领域
本发明涉及用于制造TAB(带自动粘合)带载体的铜箔以及使用这种铜箔的TAB载体带和TAB带载体。具体而言,本发明涉及用于TAB带载体的铜箔,这种铜箔能有效防止产生Sn须晶和Kirkendall空隙,还涉及使用这种铜箔的TAB载体带和TAB带载体。
背景技术
为能自动化和加速安装半导体元件,在通过在带载体上无线粘合来安装半导体元件如IC或LSI时,广泛使用TAB技术,这种带载体是承载有铜导线布线图的长的柔性绝缘薄膜。
镀Sn薄膜具有优良的耐腐蚀性和焊接能力,近来在铜导线布线图上形成镀Sn膜以代替镀Au膜。然而,已知镀Sn膜随时间推移会产生Sn须晶,其为须状、针状结晶。Sn须晶的生成会引起短路。为防止短路,镀Sn后,要求在100-150℃加热处理1-2小时。然而,加热会使镀Sn膜和铜箔的Cu之间迅速反扩散,并且由于Cu原子扩散比Sn原子快,在与镀Sn膜接触的铜箔一面形成被称作K氏空隙的空隙。这会降低镀Sn膜的粘合力,焊接时引起剥离。
由于近年来已将铜导线布线图的间距做得很细,防止产生Sn须晶和K氏空隙成为有待迅速解决的重要目标。
已经采取多种措施来防止Sn须晶和K氏空隙的产生。例如,提出的防止产生Sn须晶的一种方法是使用一种锡镀浴,其中加入铟和低熔点金属(如铅、铋或锑)的盐,加入的低熔点金属盐量为能形成含0.1-3.0%(重量)低熔点金属的沉积膜的量。还提出电镀除锡外的其它金属,作为用于镀锡膜的背衬,例如背衬焊-电镀(backing焊料-plating)或背衬镍-铜两层电镀(baking nickel-copper two-layer plating)。
为防止产生K氏空隙,提出在用焊料结合的部分形成一层含至少10%(重量)Zn的Zn层或铜合金层,抑制Cu和Sn的反扩散。
然而,这些方法存在的问题是:(1)在镀Sn之前增加一个步骤,增加了生产成本,并降低生产率和(2)不能改善铜箔本身。
发明内容
本发明的目的是提供一种用于TAB带载体的高度可靠铜箔,这种铜箔能有效防止Sn须晶和K氏空隙的产生,不需要在形成铜导线布线图后增加任何步骤或改变步骤,还提供使用这种铜箔的TAB载体带和TAB带载体。
本发明的另一个目的是提供用于TAB带载体的铜箔,它具有用于形成铜导线所需的良好性能,包括耐热性和焊剂润湿性。
为达到这些目的,深入研究后发现在布线图的铜导线上形成的镀Sn膜上产生Sn须晶,和产生K氏空隙归结于Cu和Sn的反扩散,通过使用作为用于TAB带载体的铜箔可明显防止产生Sn须晶和K氏空隙,铜箔在其光泽表面(S表面)具有一层包含镍、钴和钼(镍-钴-钼层)的合金层。本发明基于这一发现。
本发明提供的用于TAB带载体的铜箔包括:
(a)有一光泽面和一无光面的铜箔;
(b)至少在光泽面上形成的包含镍、钻和钼的合金层(镍-钴-钼层)。
本发明还提供了一种TAB载体带,它包括柔性绝缘薄膜和施用在该柔性绝缘薄膜上的上述用于TAB带载体的铜箔,以其无光面与柔性绝缘薄膜接触。
本发明还提供了一种TAB带载体,通过蚀刻用于TAB带载体的铜箔,形成铜导线布线图,可由上述TAB载体带制造TAB带载体。
具体实施方式
本发明用于TAB带载体的铜箔的特点是至少在其光泽面(S表面)具有包含镍、钴和钼的合金层(镍-钴-钼层)。铜箔上形成的镍-钴-钼层是一层包括金属镍、钴和钼作为主要组分的薄的合金层,该合金层牢固地粘合在下面的铜箔表面上。靠近镍-钴-钼合层的表面,混合有镍与钴和钼的氧化物和氢氧化物。有镍-钴-钼层的铜箔在镀Sn,随后形成铜导线布线图后,产生的Sn须晶和K氏空隙较少,从而可防止短路和焊料剥离,还可以保持形成铜导线所需的良好性能,包括蚀刻能力、耐热性和焊料润湿性。
对构成镍-钴-钼层的镍、钴和钼的镀覆量和它们的比例,按金属计,镍、钴和钼的镀覆量各为30-1,000μg/dm2为佳。如果它们的镀覆量分别小于30μg/dm2,该合金层会太薄,不足以防止产生Sn须晶和K氏空隙,如果该量大于1,000μg/dm2,可充分防止Sn须晶和K氏空隙的产生,但是,根据它们的比例,形成铜导线布线图的蚀刻能力受到不利影响。各金属的镀覆量最好是50-500μg/dm2。
本发明中,一般使用有光泽面(S表面)和无光面(M表面)的电解铜箔作为铜箔原料。这种铜箔的厚度可以是通常用于TAB带载体的铜箔的任何厚度,较好是3-70微米,5-18微米更好。
铜箔的S表面的表面粗糙度Ra宜为0.1-0.5微米,其M表面的粗糙度宜为0.2-0.7微米。当然,M表面比S表面更粗糙。要形成细的铜导线布线图,用于本发明的铜箔的M表面的表面粗糙度宜小于普通铜箔的粗糙度。M表面的表面粗糙度Ra为0.2-0.4微米更好。要制造具有良好加工质量的TAB带载体,用于本发明的铜箔宜具有较大的拉伸强度,拉伸强度最好是400-700N/mm2。要达到层叠后铜箔的M表面与粘合到M表面的柔性绝缘薄膜(如聚酰亚胺薄膜或聚酯薄膜)之间高的剥离强度,使用的铜箔宜使M表面经表面糙化处理,形成表面糙化处理层。例如通过使用含铜离子和镍离子的镀浴进行阴极电解处理,形成细粒糙化表面,来进行表面糙化处理。
通过在铜箔上形成镍-钴-钼层制造本发明铜箔的方法为已知的方法,例如电镀、化学镀、真空沉积或溅射。从大生产和良好经济性考虑,其中较好的是采用电镀的阴极电解处理。在采用电镀的情况,使铜箔在含镍离子、钴离子和钼酸离子的镀浴中进行阴极电解处理,在铜箔的S表面形成镍-钴-钼层。
在形成镍-钴-钼层的阴极电解处理中使用的镀浴含有包括镍离子、钴离子和钼酸离子的金属离子。镍离子源的较好例子包括NiSO4、NiCl2、NiCO3及其水合物。钴离子源的较好例子包括CoSO4、CoCl2及其水合物。钼酸离子源的较好例子包括Na2MoO4、(NH4)6Mo7O24、K2MoO4及其水合物。
将至少一种镍离子源、至少一种钴离子源和至少一种钼酸离子源溶解在水中,制得镀浴。镀浴中这些金属离子的较佳含量取决于上述金属的镀覆量、电流密度和电解时间,一般各为0.1-50克/升,5.0-40克/升为佳。在使用NiSO4·6H2O作为镍离子源,CoSO4·7H2O作为钴离子源,Na2MoO4·2H2O作为钼酸离子源的情况,它们的含量最好各为2.0-40克/升。
镀浴的pH值可在在很宽的范围内调节,包括酸性值和碱性值,酸性镀浴一般较好。pH宜为4.0-6.0。而且,可加入配位剂如氨基磺酸,防止金属离子在镀浴中沉淀。还可以在镀浴中加入盐如硫酸钠和氯化铵,提高镀浴的导电率。镀浴的温度一般为室温。
在铜箔的S表面形成镍-钴-钼层的方法为,将铜箔浸在镀浴中,不溶解的阳极对着铜箔的S表面,施加电流。尽管没有规定施加的电流密度和电解时间,因为它们取决于其它条件包括上述金属离子量以及电镀金属的镀覆量和比例,较好的电流密度一般为0.1-10A/dm2,0.2-2.0A/dm2更好,电解时间一般宜为1-60秒,1-30秒更好。
还可以在S表面和M表面上各形成镍-钴-钼层,方法是使M表面进行同样的阴极电解处理。
按上述在铜箔上镀覆镍-钴-钼层后,可在铜箔的M表面或其两面任选形成铬酸盐处理层,改善防锈性和耐化学性。而且,有镍-钴-钼层或有镍-钴-钼层和铬酸盐处理层的铜箔还可以有一层硅烷偶联剂处理层作为在M表面或两面上的最外层,以提高粘合强度。
本发明用于TAB带载体的铜箔宜通过将要求厚度和宽度的铜箔以恒定速度从一带卷送入铜箔处理装置,然后连续卷绕来制造,铜箔处理装置由一系列设备组成,包括任选使用的脱脂槽、酸洗槽、水洗槽、表面糙化处理槽和水洗槽,以及用于形成镍-钴-钼层的电镀槽、水洗槽、任选的铬酸盐处理槽、任选的硅烷偶联剂处理槽和干燥器。
本发明的TAB载体带可通过下列步骤制造,将由此制得的本发明用于TAB带载体的铜箔施用到柔性绝缘薄膜上,其M表面与柔性绝缘薄膜接触。柔性绝缘薄膜厚度一般宜为40-125微米。铜箔和柔性绝缘薄膜用粘合剂粘合在一起,或使用镀覆了粘合剂的柔性绝缘薄膜。
本发明的TAB带载体可通过下列步骤制造,蚀刻本发明用于TAB载体带的铜箔,形成铜导线布线图。例如,通过在本发明TAB载体带上形成要求布线图的光致抗蚀剂层,用该光致抗蚀剂层作为掩模进行蚀刻,制造铜导线布线图。
在半导体部件通过TAB技术粘合时,即使本发明的TAB带载体是Sn镀在铜导线表面,也可以防止产生Sn须晶和K氏空隙。
参考下面的实施例和比较例详细说明本发明,但是,这些实施例和比较例不构成对本发明范围的限制。
实施例1-4和比较例1-9
实施例1
溶解30克/升NiSO4·6H2O、8克/升CoSO4·7H2O、3克/升Na2MoO4·2H2O和柠檬酸三钠二水合物,制备-镀浴,其pH调节至5.0,温度为30℃。该镀浴中浸有18微米厚的电解铜箔,铜箔的M表面已预先糙化(M表面粗糙度Ra=0.55微米,S表面粗糙度Ra=0.2微米,拉伸强度=580N/mm2),它的S表面在1.0A/dm2下经阴极电解处理,电解时间为3秒,形成镍-钻-钼层。阴极电解处理后,立即从镀浴中取出该铜箔,用水漂洗,然后在100℃的干燥器内干燥。用ICP(感应偶合等离子体发光)分析仪测定,镍-钴-钼层的金属镀覆量为:100μg/dm2镍、300μg/dm2钴和100μg/dm2钼。
为进行下列特性实验,制得的载有镍-钴-钼层的铜箔粘合到有粘合剂涂层的聚酰亚胺基材(75微米厚的聚酰亚胺薄膜,粘合剂:环氧粘合剂),糙化表面与该基材接触,于160℃加热6小时,固化该粘合剂,然后切割成100毫米长,70毫米宽的试片。下列特性实验的结果列于表1和表2。
(1)Sn须晶实验
通过蚀刻在试片上形成有250条线的实验线路,线宽30微米,线间距30微米,长度1毫米,之后该试片用10%硫酸酸洗10秒,在70℃的化学Sn镀浴中镀上约1微米厚的Sn,用80℃热水漂洗后干燥。然后,该试片在100℃的干燥器中加热2小时,使其在室温静置约1个月,用500倍的金相显微镜观察在250条线上Sn须晶的存在情况。实验结果的评价如下:○:小于5个5微米或更长的Sn须晶,△:5-30个Sn须晶,×:31个或更多的Sn须晶。
(2)K氏空隙实验
通过蚀刻在两个试片上各形成有15条线的实验线路,线宽50微米,线间距50微米,长度1毫米,之后该试片用10%硫酸酸洗10秒,在70℃的化学Sn镀浴中镀上约1微米厚的Sn,用80℃热水漂洗后干燥。然后,该试片在125℃的干燥器中加热2小时,从干燥器中取出,使其冷却至室温。随后,一个试片在160℃干燥器中加热2小时,另一个在170℃干燥器中加热2小时。然后,两个试片埋在掩埋树脂中,粉碎后观察截面,用10000倍电子显微镜观察在Sn层和Cu层间的界面,在15条50微米宽的线上产生的K氏空隙。实验结果的评价如下:○:无K氏空隙,△:有些线上有小于0.1微米的K氏空隙,×:有0.1微米或更大的K氏空隙。
(3)耐热性实验
在层叠后、在200℃加热1小时后和在240℃加热10分钟后立刻用肉眼观察试片的铜箔表面的变色情况。实验结果的评价如下:○:不变色,△:很少变色,×:强烈变色。
(4)焊料湿润性实验
化学研磨表面1微米,预处理试片,根据IPC-TM-650.2.4.12进行评价。
实施例2-4
采用表1所列的镀浴和电解条件,在与实施例1所用相同的铜箔上形成镍-钴-钼层,然后按照与实施例1相同的方式进行水漂洗和干燥。用所制得的铜箔制取试片,测定金属含量,并按照和实施例1相同的方式进行特性实验。结果列于表1和表2。
比较例1
按照与实施例1相同的方式,在与实施例1所用相同的铜箔上形成镍层,不同之处是,按照表1所列改变镀浴的组成和电解条件,然后按照与实施例1相同的方式进行水漂洗和干燥。用所制得的铜箔制取试片,测定金属含量,并按照和实施例1相同的方式进行特性实验。结果列于表1和表2。
比较例2
按照与实施例1相同的方式,在与实施例1所用相同的铜箔上形成钴层,不同之处是,按照表1所列改变镀浴的组成和电解条件,然后按照与实施例1相同的方式进行水漂洗和干燥。用所制得的铜箔制取试片,测定金属含量,并按照和实施例1相同的方式进行特性实验。结果列于表1和表2。
比较例3
按照与实施例1相同的方式,在与实施例1所用相同的铜箔上形成镍-钴层,不同之处是,按照表1所列改变镀浴的组成和电解条件,然后按照与实施例1相同的方式进行水漂洗和干燥。用所制得的铜箔制取试片,测定金属含量,并按照和实施例1相同的方式进行特性实验。结果列于表1和表2。
比较例4
按照与实施例1相同的方式,在与实施例1所用相同的铜箔上形成钴-钼层,不同之处是,按照表1所列改变镀浴的组成和电解条件,然后按照与实施例1相同的方式进行水漂洗和干燥。用所制得的铜箔制取试片,测定金属含量,并按照和实施例1相同的方式进行特性实验。结果列于表1和表2。
比较例5
按照与实施例1相同的方式,在与实施例1所用相同的铜箔上形成镍-钼层,不同之处是,按照表1所列改变镀浴的组成和电解条件,然后按照与实施例1相同的方式进行水漂洗和干燥。用所制得的铜箔制取试片,测定金属含量,并按照和实施例1相同的方式进行特性实验。结果列于表1和表2。
比较例6
按照与实施例1相同的方式,在与实施例1所用相同的铜箔上形成锡层,不同之处是,按照表1所列改变镀浴的组成和电解条件,然后按照与实施例1相同的方式进行水漂洗和干燥。用所制得的铜箔制取试片,测定金属含量,并按照和实施例1相同的方式进行特性实验。结果列于表1和表2。
比较例7
按照与实施例1相同的方式,在与实施例1所用相同的铜箔上形成锡-锌层,不同之处是,按照表1所列改变镀浴的组成和电解条件,然后按照与实施例1相同的方式进行水漂洗和干燥。用所制得的铜箔制取试片,测定金属含量,并按照和实施例1相同的方式进行特性实验。结果列于表1和表2。
比较例8
按照与实施例1相同的方式,在与实施例1所用相同的铜箔上形成铟-锌层,不同之处是,按照表1所列改变镀浴的组成和电解条件,然后按照与实施例1相同的方式进行水漂洗和干燥。用所制得的铜箔制取试片,测定金属含量,并按照和实施例1相同的方式进行特性实验。结果列于表1和表2。
比较例9
按照与实施例1相同的方式,在与实施例1所用相同的铜箔上形成铬-锌层,不同之处是,按照表1所列改变镀浴的组成和电解条件,然后按照与实施例1相同的方式进行水漂洗和干燥。用所制得的铜箔制取试片,测定金属含量,并按照和实施例1相同的方式进行特性实验。结果列于表1和表2。
实施例1-4的铜箔具有各自的镍-钴-钼层,能防止产生Sn须晶和K氏空隙,通过调节金属的镀覆量,还具有良好的耐热性和焊剂湿润性。比较例1中制成的有镍层的铜箔防止产生Sn须晶,但不能防止产生K氏空隙。比较例2中制成的有钴层的铜箔既不能防止产生Sn须晶,也不能防止产生K氏空隙。比较例3中制成的有镍-钴层的铜箔稍能防止产生Sn须晶和K氏空隙,但不能完全防止。比较例4中制成的有钴-钼层的铜箔防止产生K氏空隙,但不能防止产生Sn须晶。比较例5中制成的有镍-钼层的铜箔防止产生Sn须晶,但不能防止产生K氏空隙。比较例6制成的有锡层的铜箔不能防止产生K氏空隙。比较例7中制成的有锡-锌层的铜箔和比较例8中制成的有铟-锌层的铜箔既不能防止产生Sn须晶,也不能防止产生K氏空隙。比较例9中制成的有铬-锌层的铜箔不能防止产生Sn须晶,不能完全防止产生K氏空隙。
这些结果表明,本发明具有各自镍-钴-钼层的铜箔的特性实验结果优良。可以认为,镍和钴和钼的协同作用提供了完全不同于仅镍或钴层,以及选自镍、钴和钼中两种组分的层的性质,尤其是防止产生Sn须晶和K氏空隙。
表1
实施例 | 镀浴组成克/升 | 电解条件 | 金属镀覆量:μg/dm2 | |||||||||
pH | 温度℃ | 电流密度A/dm2 | 时间秒 | Co | Ni | Mo | Sn | Zn | In | Cr | ||
1 | NiSO4·6H2O:30CoSO4·7H2O:8Na2MoO4·2H2O:3Na3C6H5O7·2H2O:30 | 5.0 | 30 | 1.0 | 3 | 300 | 100 | 100 | - | - | - | - |
2 | NiSO4·6H2O:30CoSO4·7H2O:8Na2MoO4·2H2O:3Na3C6H5O7·2H2O:30 | 5.0 | 30 | 1.5 | 4 | 220 | 370 | 150 | - | - | - | - |
3 | NiSO4·6H2O:30CoSO4·7H2O:8Na2MoO4·2H2O:3Na3C6H5O7·2H2O:30 | 5.0 | 30 | 1.0 | 2 | 100 | 50 | 50 | - | - | - | - |
4 | NiSO4·6H2O:30CoSO4·7H2O:8Na2MoO4·2H2O:3Na3C6H5O7·2H2O:30 | 5.0 | 30 | 1.0 | 5 | 300 | 200 | 100 | - | - | - | - |
比较例 | ||||||||||||
1 | NiSO4·6H2O:280H3BO3:40己糖酸钠:2.0 | 4.0 | 30 | 0.6 | 3 | - | 100 | - | - | - | - | - |
2 | CoSO4·7H2O:9.3 | 4.6 | 30 | 0.4 | 3 | 250 | - | - | - | - | - | - |
3 | NiSO4·6H2O:30CoSO4·7H2O:9.3Na3C6H5O7·2H2O:30 | 4.6 | 30 | 1.0 | 3 | 400 | 100 | - | - | - | - | - |
4 | NiSO4·6H2O:9.3Na2MoO4·H2O:3Na3C6H5O7·2H2O:5 | 4.6 | 30 | 0.6 | 3 | 230 | - | 50 | - | - | - | - |
5 | NiSO4·6H2O:30Na2MoO4·2H2O:3Na3C6H5O7·2H2O:30 | 4.6 | 30 | 0.6 | 3 | - | 130 | 50 | - | - | - | - |
6 | SnSO4:1.0Na3C6H5O7·2H2O:20(NH4)2SO4:10 | 6.2 | 30 | 0.7 | 4 | - | - | - | 350 | - | - | - |
7 | SnSO4:1.0ZnSO4·7H2O:2.0Na3C6H5O7·2H2O:20(NH4)2SO4:10 | 6.2 | 30 | 0.7 | 4 | - | - | - | 300 | 100 | - | - |
8 | In2(SO4)3:0.5ZnSO4·7H2O:5.0 | 3.0 | 30 | 0.8 | 3 | - | - | - | - | 170 | 90 | - |
9 | Na2Cr2O7·2H2O:2.0ZnSO4·7H2O:1.0 | 4.3 | 30 | 0.2 | 4 | - | - | - | - | 30 | - | 20 |
表2
实施例 | 比较例 | ||||||||||||
1 | 2 | 3 | 4 | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | |
形成的层(μg/dm2) | Ni-Co-Mo | Ni-Co-Mo | Ni-Co-Mo | Ni-Co-Mo | Ni | Co | Ni-Co | Co-Mo | Ni-Mo | Sn | Sn-Zn | In-Zn | Cr-Zn |
Co | 300 | 220 | 100 | 300 | - | 250 | 400 | 230 | - | - | - | - | - |
Ni | 100 | 370 | 50 | 200 | 100 | - | 100 | - | 130 | - | - | - | - |
Mo | 100 | 150 | 50 | 100 | - | - | - | 50 | 50 | - | - | - | - |
Sn | - | - | - | - | - | - | - | - | - | 350 | 300 | - | - |
Zn | - | - | - | - | - | - | - | - | - | - | 100 | 170 | 30 |
In | - | - | - | - | - | - | - | - | - | - | - | 90 | - |
Cr | - | - | - | - | - | - | - | - | - | - | - | - | 20 |
特性 | |||||||||||||
Sn须晶 | ○ | ○ | ○ | ○ | ○ | × | × | × | ○ | ○ | × | × | × |
K氏空隙160℃170℃ | ○○ | ○○ | ○○ | ○○ | ×× | ×× | △× | ○○ | ×× | ×× | ×× | ×× | △× |
耐热性200℃240℃ | ○○ | ○○ | ○○ | ○○ | △△ | △△ | ○○ | ○△ | ○△ | ○○ | ○○ | ○○ | △△ |
焊料湿润性 | ○ | ○ | ○ | ○ | × | △ | ○ | ○ | △ | ○ | ○ | ○ | ○ |
本发明用于TAB带载体的铜箔和使用这种铜箔的TAB载体带和TAB带载体在防止产生Sn须晶和K氏空隙两方面具有显著效果。本发明用于TAB带载体的铜箔还具有形成铜导线所需的优良特性,包括耐热性和焊剂湿润性。而且具有防止产生Sn须晶和K氏空隙的作用,这种铜箔在工业上是非常宝贵的,因为在形成铜导线后,不需要改变或增加随后的步骤。
Claims (12)
1.一种带自动粘合载体带,它包括柔性绝缘薄膜和施用在该薄膜上的用于带自动粘合带载体的铜箔,其特征在于:所述用于带自动粘合带载体的铜箔包括
(a)有一光泽面和一无光面的铜箔;
(b)(i)在光泽面上形成的包含50-500μg/dm2的镍、50-500μg/dm2的钴、和50-500μg/dm2的钼的合金层,或者
(ii)在光泽面和无光面上形成的包含50-500μg/dm2的镍、50-500μg/dm2的钴、和50-500μg/dm2的钼的合金层,其中,无光面对着柔性绝缘薄膜。
2.如权利要求1所述的带自动粘合载体带,其特征在于:所述用于带自动粘合带载体的铜箔在光泽面上有一层包含镍、钴、和钼的合金层,并且在所述合金层上有一层铬酸盐处理层。
3.如权利要求1所述的带自动粘合载体带,其特征在于:所述用于带自动粘合带载体的铜箔在光泽面和无光面各有一层包含镍、钴和钼的合金层,并且在至少一层合金层上有一层铬酸盐处理层。
4.如权利要求1所述的带自动粘合载体带,其特征在于:所述用于带自动粘合带载体的铜箔在无光面上有一层表面糙化处理层。
5.如权利要求3所述的带自动粘合载体带,其特征在于:所述用于带自动粘合带载体的铜箔在无光面与在该无光面上形成的合金层之间有一层表面糙化处理层。
6.如权利要求1-5中任一项所述的带自动粘合载体带,其特征在于:所述用于带自动粘合带载体的铜箔在其至少一面上有一层硅烷偶联剂处理层作为最外层。
7.一种带自动粘合带载体,通过蚀刻如权利要求1所述用于带自动粘合带载体的铜箔形成铜导线布线图而制得。
8.如权利要求7所述的带自动粘合带载体,其特征在于:所述用于带自动粘合带载体的铜箔在光泽面上有一层包含镍、钴、和钼的合金层,并且在所述合金层上有一层铬酸盐处理层。
9.如权利要求7所述的带自动粘合带载体,其特征在于:所述用于带自动粘合带载体的铜箔在其光泽面和无光面各有一层包含镍、钴和钼的合金层,并且在至少一层合金层上有一层铬酸盐处理层。
10.如权利要求7所述的带自动粘合带载体,其特征在于:所述用于带自动粘合带载体的铜箔在无光面上有一层表面糙化处理层。
11.如权利要求9所述的带自动粘合带载体,其特征在于:所述用于带自动粘合带载体的铜箔在无光面与在该无光面上形成的合金层之间有一层表面糙化处理层。
12.如权利要求7-11中任一项所述的带自动粘合带载体,其特征在于:所述用于带自动粘合带载体的铜箔在其至少一面上有一层硅烷偶联剂处理层作为最外层。
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US20050249969A1 (en) * | 2004-05-04 | 2005-11-10 | Enthone Inc. | Preserving solderability and inhibiting whisker growth in tin surfaces of electronic components |
US20050249968A1 (en) * | 2004-05-04 | 2005-11-10 | Enthone Inc. | Whisker inhibition in tin surfaces of electronic components |
US7488408B2 (en) * | 2004-07-20 | 2009-02-10 | Panasonic Corporation | Tin-plated film and method for producing the same |
DE102004039056A1 (de) * | 2004-08-11 | 2006-03-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung eines Substrats für Solarzellen, derartige Substrate sowie deren Verwendung |
TW200704833A (en) * | 2005-06-13 | 2007-02-01 | Mitsui Mining & Smelting Co | Surface treated copper foil, process for producing surface treated copper foil, and surface treated copper foil with very thin primer resin layer |
TWI414638B (zh) * | 2006-06-07 | 2013-11-11 | Furukawa Electric Co Ltd | A method for manufacturing a surface-treated electrolytic copper foil, and a circuit board |
JP5479668B2 (ja) * | 2006-12-26 | 2014-04-23 | 古河電気工業株式会社 | 表面処理銅箔 |
JP5481577B1 (ja) * | 2012-09-11 | 2014-04-23 | Jx日鉱日石金属株式会社 | キャリア付き銅箔 |
KR102517953B1 (ko) * | 2017-10-26 | 2023-04-03 | 주식회사 엘지화학 | 리드 탭 및 이를 구비하는 파우치형 배터리 |
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US5622782A (en) * | 1993-04-27 | 1997-04-22 | Gould Inc. | Foil with adhesion promoting layer derived from silane mixture |
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