CN114373831A - 一种隧穿氧化层、n型双面太阳能晶硅电池及制备方法 - Google Patents
一种隧穿氧化层、n型双面太阳能晶硅电池及制备方法 Download PDFInfo
- Publication number
- CN114373831A CN114373831A CN202111650174.9A CN202111650174A CN114373831A CN 114373831 A CN114373831 A CN 114373831A CN 202111650174 A CN202111650174 A CN 202111650174A CN 114373831 A CN114373831 A CN 114373831A
- Authority
- CN
- China
- Prior art keywords
- layer
- silicon
- oxide layer
- silicon wafer
- tunneling oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005641 tunneling Effects 0.000 title claims abstract description 49
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 68
- 239000010703 silicon Substances 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 54
- 239000003513 alkali Substances 0.000 claims abstract description 32
- 238000000151 deposition Methods 0.000 claims abstract description 27
- 238000000137 annealing Methods 0.000 claims abstract description 21
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 18
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 238000005498 polishing Methods 0.000 claims abstract description 16
- 238000004140 cleaning Methods 0.000 claims abstract description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052796 boron Inorganic materials 0.000 claims abstract description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 33
- 238000005406 washing Methods 0.000 claims description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 18
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 11
- 239000012686 silicon precursor Substances 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 230000009471 action Effects 0.000 claims description 6
- 235000013842 nitrous oxide Nutrition 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 5
- 238000007517 polishing process Methods 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000010926 purge Methods 0.000 claims description 4
- 238000007664 blowing Methods 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 abstract description 10
- 239000012535 impurity Substances 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 45
- 229910052814 silicon oxide Inorganic materials 0.000 description 38
- 239000010408 film Substances 0.000 description 35
- 238000006243 chemical reaction Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 7
- 238000005247 gettering Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 229910017604 nitric acid Inorganic materials 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- -1 silver-aluminum Chemical compound 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
本申请实施例提供一种隧穿氧化层、N型双面太阳能晶硅电池及制备方法,涉及晶硅太阳能电池领域。隧穿氧化层的制备方法主要是先在硅片表面形成富余‑OH,再采用等离子体增强原子层沉积法,在硅片背面沉积形成隧穿氧化层。N型双面太阳能晶硅电池的制备方法主要是将N型硅片依次进行清洗制绒、硼扩散、碱抛光;在正面依次形成P型掺杂层、钝化层、减反射层;在背面先形成隧穿氧化层,再形成N型掺杂多晶硅层,进行退火后,形成减反射层。采用该方法制得的SiOx层的生长速度快,且连续、致密,吸杂与阻塞效果优异,膜厚精确可控,经高温退火后具有高密度、大尺寸的针孔。
Description
技术领域
本申请涉及晶硅太阳能电池领域,具体而言,涉及一种隧穿氧化层、N型双面太阳能晶硅电池及制备方法。
背景技术
近年来,超薄SiOx层、重掺杂poly硅钝化接触结构使晶硅太阳能电池效率得到了极大的提高。其中超薄SiOx层具有极低的界面态密度,一定的化学钝化效果,饱和的硅表面悬挂键,以及因空穴和电子高度不对称的俘获能力(空穴势垒大于电子势垒)而具有的电子选择性收集的能力。还有研究表明SiOx层可以有效阻止重金属杂质原子从多晶硅层进入到硅体区内,具有阻断作用与吸杂效应。
现在制备SiOx层主要采用湿化学生长法(例如采用热硝酸的湿化学生长法),热氧化生长法(例如采用热硝酸的氧化生长法)和等离子增强化学气相沉积法(PlasmaEnhanced Chemical Vapor Deposition,PECVD)、热原子层沉积法(Atomic LayerDeposition,ALD)。其中,热氧化生长法制备SiOx层的速度十分缓慢,不利于工业化生产;PECVD法生成SiOx的沉积速率过快,难以精确控制SiOx的沉积,因此很难将SiOx层的厚度控制在超薄的范围内。湿化学生长法与PECVD法制备的SiOx中Si4+计量比低,阻塞与吸杂效果弱,热稳定性差。ALD法制得的SiOx层的致密度差,表面态密度高,钝化性能下降,无法得到高密度与大尺寸的针孔,不利于降低接触电阻;而且需要在高温下沉积,制备SiOx层时间比较长,不利于工业化生产。
发明内容
本申请实施例的目的在于提供一种隧穿氧化层、N型双面太阳能晶硅电池及制备方法,SiOx层的生长速度快,且连续、致密,吸杂与阻塞效果优异,膜厚精确可控,经高温退火后具有高密度、大尺寸的针孔。
第一方面,本申请实施例提供了一种隧穿氧化层的制备方法,先在硅片表面形成富余-OH,再采用等离子体增强原子层沉积法(Plasma Enhanced Atomic LayerDeposition,PEALD),在硅片背面沉积形成隧穿氧化层。
在上述技术方案中,先在硅片表面形成富余-OH,为PEALD沉积制备SiOx隧穿氧化层提供-OH,PEALD克服了ALD的缺点,利用硅前驱体和氧源在射频电源产生的电场作用下发生原子反应:氧源被电离成等离子体,等离子体具有较高的能量和活性,快速与吸附在硅片上面的硅原子结合,生成SiOx;PEALD沉积生长的SiOx膜纯度高,是单一组分的SiO2(Si与O的配位比为1比2),薄膜致密性好,膜厚可以精确控制在纳米量级;SiOx膜中Si4+含量比例高,具有非常强的吸杂、阻塞效果和热稳定性,额外氧原子少,界面态密度低,还可以精确控制膜厚;可以耐高温退火,在高温退火后能够保证均匀性,具有高密度、大尺寸的针孔。而且-OH能够增强PEALD过程中硅前驱体的覆盖率,保证形成致密、连续的SiO2薄膜,还可以节约有机硅源的成本。
在一种可能的实现方式中,形成富余-OH的方法为:在硼扩散后的碱抛光工序中,使用NaOH或KOH与H2O2配制而成的碱液清洗硅片。
在上述技术方案中,利用硼扩后的碱抛工序就能在硅片背面形成富余-OH,增强硅前驱体的覆盖率,从而形成致密、连续的SiO2薄膜。
在一种可能的实现方式中,等离子体增强原子层沉积法包括以下步骤:
S1、通入硅前驱体,吸附硅片表面的硅原子,吹扫氩气,吹掉多余的硅原子,以在硅片表面保留吸附一层硅原子;
S2、通入氧源,并在射频电源产生的电场作用下,在硅片表面沉积形成SiOx膜;
S3、重复步骤S1~S2,形成隧穿氧化层。
在上述技术方案中,首先通入硅前驱体在硅片表面吸附硅原子,通过氩气吹扫,吹掉多余的原子,仅保留一层硅原子吸附在硅片表面,然后再通入氧源,在射频电源产生的电场作用下,氧源被电离成等离子体,快速与吸附在硅片上面的硅原子结合,形成SiO2膜,经过多次循环可以精确制备适用于晶硅太阳能电池的隧穿氧化层。
在一种可能的实现方式中,射频电源为40kHz-400kHz的方形波或者正弦波电源。
在上述技术方案中,射频电源属于中低频电源,信号变化慢,波形平滑,不同于MHz或者GHz信号变化非常快,容易产生突变,因此本申请形成的SiOx膜层的均匀性更佳,可制备单一组分的SiOx膜,制备的SiOx膜Si4+化学计量比高,具有优异的吸杂、阻塞、热稳定性。
在一种可能的实现方式中,沉积的温度为80℃-400℃。
在上述技术方案中,沉积的温度范围宽,且相对较低,能够制备钝化性能好的隧穿氧化层;且低温沉积有利于降低用电量,降低制造成本,即PEALD的温度范围广而且可低温生长,减少能源消耗。
在一种可能的实现方式中,硅前驱体为有机硅源(TMA)或硅烷(SiH4);氧源为氧气(O2)或笑气(N2O)。
在上述技术方案中,有机硅源或硅烷作为PEALD法沉积SiOx膜的典型硅前驱体,氧气或者笑气作为典型的氧源。
在一种可能的实现方式中,SiOx膜的沉积次数为1次-400次;和/或,隧穿氧化层的厚度为1nm-2nm。
在上述技术方案中,通过控制SiOx膜的沉积次数,可以使隧穿氧化层具有明显的多层结构,可以通过调控修改界面SiOx的工艺影响多晶/非晶硅的结构与性能。
第二方面,本申请实施例提供了一种N型双面太阳能晶硅电池的制备方法,其包括以下步骤:
将N型硅片依次进行清洗制绒、硼扩散、碱抛光;
在碱抛光后的N型硅片的正面依次形成P型掺杂层、钝化层、减反射层;
在碱抛光后的N型硅片的背面先采用第一方面提供的制备方法形成隧穿氧化层,再形成N型掺杂多晶硅层,进行退火后,形成减反射层。
在上述技术方案中,在射频电源电场的作用下生长SiOx膜速度较快,提高了设备的利用率,便于产业化低成本生产这种双面N型太阳能晶硅电池;隧穿氧化层经过退火后,具有较高密度与大尺寸的针孔,能够有效选择电子透过,同时具有低的表面态密度与接触电阻,能够大幅提高N型双面晶硅太阳能电池的转换效率。
在一种可能的实现方式中,退火的温度为850℃-1100℃。
在上述技术方案中,经过高温退火以形成高密度、大尺寸的针孔。
在一种可能的实现方式中,碱抛光的方法包括依次进行预清洗、水洗、刻蚀、水洗、碱洗、水洗、酸洗和水洗,其中碱洗采用NaOH或KOH与H2O2按照体积比1:9-10配制而成的碱液,碱洗温度为45°-55°。
在上述技术方案中,通过特定的碱抛光工序就能同时在硅片表面形成富余-OH。
第三方面,本申请实施例提供了一种N型双面太阳能晶硅电池,其包括N型硅片,以及依次叠加位于N型硅片正面的P型掺杂层、钝化层、减反射层,依次叠加于N型硅片背面的隧穿氧化层、N型掺杂多晶硅层和减反射层,隧穿氧化层按照第一方面提供的隧穿氧化层的制备方法形成。
在上述技术方案中,N型双面晶硅太阳能电池的转换效率高。
附图说明
为了更清楚地说明本申请实施例的技术方案,下面将对本申请实施例中所需要使用的附图作简单地介绍,应当理解,以下附图仅示出了本申请的某些实施例,因此不应被看作是对范围的限定,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他相关的附图。
图1为本申请实施例1中的隧穿氧化硅层透射电镜图。
具体实施方式
申请人在实现本申请的过程中发现:电池中氧化物钝化层的钝化质量在很大程度上取决于界面氧化物的制备与退火温度;而且SiOx薄膜的致密性,SiOx薄膜的厚度以及Si4+化学计量比对阻塞杂质迁移,吸杂效应以及热稳定性具有非常明显的影响。对于SiOx薄膜来说,电子穿过致密的SiOx薄膜是通过量子隧穿与局部针孔Pinhole来完成的,因此局部高密度与大尺寸的针孔Pinhole有利于电子的传输,接触电阻的降低,从而提高晶硅太阳能电池的开压与短路电流。
现在制备SiOx薄膜主要采用湿化学生长法、热氧化生长法和等离子增强化学气相沉积法PECVD、热原子层沉积法ALD。这些方法存在各种各样的问题:
热氧化法制备SiOx薄膜的速度十分缓慢,因为其需要先使HNO3分解才能提供活性氧,不利于工业化快速批量生产。PECVD法制备SiOx薄膜在太阳能工业界中已经被广泛应用于抑制电位诱导降解PID,然而由于硅烷(SiH4)与笑气(N2O)或者氧气反应生成SiOx薄膜的沉积速率过快,难以精确控制SiOx薄膜的沉积,因此很难将SiOx薄膜的厚度控制在2nm以内,而SiOx薄膜厚度超过2nm,则电子难以隧穿,电流大大降低。氧化层厚度严重依赖于氧原子的扩散能,而变得自饱和。硝酸湿热生长与PECVD法制备的SiOx薄膜中Si4+计量比比热氧化法制备的SiOx薄膜的要低,阻塞与吸杂效果弱,热稳定性差;硝酸湿热生长的SiOx薄膜不能承受高的退火温度,此外富余的氧在退火过程中会与硅原子再次结合,增加SiOx的厚度。热氧化法制备的SiOx薄膜具有优异的薄膜质量与致密性,在吸杂、阻塞、热稳定性上都有较好的效果,但热氧化法通常时间较长,温度高,不利于大规模量产。
热原子层沉积ALD通产是利用硅烷(SiH4)在200-500℃的沉积温度下和氧气或笑气一起来使用。以氧气为例,简述具体过程如下:基底表面的原生吸附——硅烷与表面的羟基发生反应——表面吸附硅基基团至饱和——剩余的硅烷被抽走——氧气输入腔体,氧气与硅基团反应,产生Si-O桥键——表面被羟基钝化,多余的氧气被抽走——再次开始新一轮循环表面第一层SiOx薄膜生成。缺点一是膜层致密度差,表面态密度高,钝化性能下降;缺点二是需要在200℃-500℃的高温下沉积;缺点三是制备SiOx膜层时间比较长,降低了设备的利用率,设备产能下降,这在工业化生产中是不可接受的;缺点四是无法得到高密度与大尺寸的Pinhole,不利于降低接触电阻。
分析现有的各种制备SiOx薄膜的方法和缺陷后,申请人发现,SiOx薄膜制备主要存在的问题就是:SiOx层的生长速度过快或过慢,致密性差,Si4+计量比低,无法经高温退火,也就无法得到高密度与大尺寸的Pinhole。
为使本申请实施例的目的、技术方案和优点更加清楚,下面将对本申请实施例中的技术方案进行清楚、完整地描述。实施例中未注明具体条件者,按照常规条件或制造商建议的条件进行。所用试剂或仪器未注明生产厂商者,均为可以通过市售购买获得的常规产品。
下面对本申请实施例的隧穿氧化层、N型双面太阳能晶硅电池及制备方法进行具体说明。
本申请实施例提供一种隧穿氧化层的制备方法,其包括以下步骤:先在硅片表面形成富余-OH,通常是在硼扩散后的碱抛光工序中,使用NaOH或KOH与H2O2配制而成的碱液清洗硅片;再采用等离子体增强原子层沉积法,在硅片背面沉积形成隧穿氧化层。
其中,等离子体增强原子层沉积法包括以下步骤:
S1、通入硅前驱体,硅前驱体为有机硅源或硅烷,吸附硅片表面的硅原子,吹扫氩气,吹掉多余的硅原子,以在硅片表面保留吸附一层硅原子;
S2、通入氧源,氧源为氧气或笑气,并在射频电源产生的电场作用下,射频电源为40kHz-400kHz的方形波或者正弦波电源,沉积的温度为80℃-400℃,在硅片表面沉积形成SiOx膜;
S3、重复步骤S1~S2,直至形成隧穿氧化层。
通常情况下,SiOx膜的沉积次数为1次-400次;对应制得的隧穿氧化层的厚度为1nm-2nm。
本申请实施例还提供一种N型双面太阳能晶硅电池,其包括硅片,以及依次叠加位于硅片正面的钝化层、减反射层和正面电极,依次叠加于硅片背面的隧穿氧化层、掺杂多晶硅层和减反射层、背面电极,隧穿氧化层按照上述的隧穿氧化层的制备方法形成。
需要说明的是,本申请实施例中的硅片为N型硅片,不限定硅片的几何尺寸和规格形状。隧穿氧化层处于N型硅片背面和掺杂多晶硅层之间,顺序不得调整。
另外,本申请实施例还提供一种上述N型双面太阳能晶硅电池的制备方法,其采用PEALD设备进行,包括以下步骤:
(1)将N型硅片依次进行清洗制绒、硼扩散、碱抛光。
其中,碱抛光的方法包括依次进行预清洗、水洗、刻蚀、水洗、碱洗、水洗、酸洗和水洗,其中碱洗采用NaOH或KOH与H2O2按照体积比1:9-10配制而成的碱液,碱洗温度为45°-55°,从而在硅片表面形成富余-OH。
(2)在碱抛光后的N型硅片的正面依次形成P型掺杂层、钝化层、减反射层。
(3)在碱抛光后的N型硅片的背面先采用上述的隧穿氧化层的制备方法形成隧穿氧化层,具体是采用等离子体增强原子层沉积法沉积形成隧穿氧化层;再形成N型掺杂多晶硅层,进行退火后,退火的温度为850℃-1100℃,形成减反射层。
(4)在正面的减反射层上形成正面电极,在背面的减反射层上形成背面电极。
需要说明的是,本申请实施例不限定PEALD设备的形式和形状,如管式或者板式设备均可,也不限定于设备厂家和使用的环境条件。本申请实施例也不限定硅片承载装置的材质和形状,比如石墨舟的形状和大小不做限定。
以下结合实施例对本申请的特征和性能作进一步的详细描述。
实施例1
本实施例提供一种N型双面太阳能晶硅电池,其按照以下制备过程制得:
第一步、在清洗N型硅片后,在硅片正表面制备绒面以减小光反射,在N型硅片的正面进行硼扩散得到含硼化合物,形成P型掺杂层。
第二步、在硼扩散后去掉硼硅玻璃,具体方式为:
1.预清洗:NaOH与H2O2为1比10体积比;70℃;135s;
2.水洗:去离子水;120s;
3.刻蚀:NaOH与添加剂;460s,背面抛光。
4.水洗:去离子水;120s。
5.碱洗,NaOH或KOH与H2O2体积比为3比28,50℃,120s。
6.水洗:去离子水;120s。
7.酸洗,HCl水溶液;120s。
8.水洗:去离子水;120s。
其中,用NaOH或KOH与H2O2结尾形成富余-OH,有利于后续等离子原子层沉积SiOx膜。
第三步、在P型掺杂层的正面利用等离子体原子层沉积PEALD方式制备氧化铝钝化层:射频电源为40kHz,沉积的温度为430℃。
第四步、在氧化铝钝化层正面利用等离子体气相沉积法PECVD沉积含有多层不同折射率的含氮化硅的减反射层,从里至外具体为3层氮化硅层(从里到外折射率依次降低),1层氮氧化硅层和1层氧化硅层。
第五步、在N型硅片的背面利用PEALD方式制备SiOx隧穿氧化硅层,SiOx隧穿氧化硅层厚度为1.5nm:射频电源为40kHz的方形波电源,沉积的温度为400℃,再形成本征以及掺杂含磷化合物的N型掺杂多晶硅层,然后高温退火,退火温度920℃,经过RCA清洗。
制备的隧穿氧化硅层透射电镜图如图1所示,由图可以看出,生长的SiOx晶格方向是沿着Poly的晶格生长;而且出现高密度、大尺寸pinhole。
第六步、在N型掺杂多晶硅层背面制备一层含氮化硅的减反射层,从里至外具体为4层氮化硅层(折射率依次降低),1层氮氧化硅层,1层氧化硅层。
第七步、在正面的减反射层上面印刷银铝浆形成正面电极,在背面的减反射层上面印刷银浆形成背面电极。
制备的双面晶硅太阳能电池iVoc可达720mV以上,电池转换效率达到24.5%以上。
对比例1
本对比例提供一种N型双面太阳能晶硅电池,其制备过程与实施例1的不同之处:本对比例在抛光后没有采用高比例NaOH或KOH加H2O2碱抛。
该N型双面太阳能晶硅电池的开压为705mV左右,电池转换效率为24%左右。
对比例2
本对比例提供一种N型双面太阳能晶硅电池,其制备过程与实施例1的不同之处在于:本对比例硼扩时,降低硼源流量,降低沉积表面源浓度,方阻控制在100左右,且没有退火。
该N型双面太阳能晶硅电池的开压为700mV左右,电池转换效率为23.7%左右。
对比例3
本对比例提供一种N型双面太阳能晶硅电池,其制备过程与实施例1的不同之处在于:将硅片在一定浓度的热硝酸溶液中氧化,且没有退火。
该N型双面太阳能晶硅电池的开压为708mV左右,电池转换效率为23.9%左右。
对比例4
本对比例提供一种N型双面太阳能晶硅电池,其制备过程与实施例1的不同之处在于:本对比例的沉积温度为360℃,通入10000sccm笑气,PECVD功率为10kW,沉积120s。
该N型双面太阳能晶硅电池的开压为710mV左右,电池转换效率为24%左右。
一、电池转换效率对比数据
此外,目前市面上大部分为PERC电池,与本产品结构不同,因此常规工艺电池的转换效率大多低于24%(电池转换效率为23%,开压低于710mV,电流低于18A),本方法制备的太阳能电池最高转换效率目前可达24.7%。
二、电池表观对比
通过实施例和对比例可知,本申请实施例的PEALD方式通过调整循环次数,能够制备出膜厚可控隧穿氧化层;能够经过高温退火,获得了高密度与大尺寸的Pinhole。
综上所述,本申请实施例的隧穿氧化层、N型双面太阳能晶硅电池及制备方法,SiOx层的生长速度快,且连续、致密,吸杂与阻塞效果优异,膜厚精确可控,经高温退火后具有高密度、大尺寸的针孔。
以上所述仅为本申请的实施例而已,并不用于限制本申请的保护范围,对于本领域的技术人员来说,本申请可以有各种更改和变化。凡在本申请的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本申请的保护范围之内。
Claims (10)
1.一种隧穿氧化层的制备方法,其特征在于,其包括以下步骤:先在硅片表面形成富余-OH,再采用等离子体增强原子层沉积法,在所述硅片背面沉积形成隧穿氧化层。
2.根据权利要求1所述的隧穿氧化层的制备方法,其特征在于,形成富余-OH的方法为:在硼扩散后的碱抛光工序中,使用NaOH或KOH与H2O2配制而成的碱液清洗所述硅片。
3.根据权利要求1所述的隧穿氧化层的制备方法,其特征在于,所述等离子体增强原子层沉积法包括以下步骤:
S1、通入硅前驱体,吸附硅片表面的硅原子,吹扫氩气,吹掉多余的硅原子,以在硅片表面保留吸附一层硅原子;
S2、通入氧源,并在射频电源产生的电场作用下,在所述硅片表面沉积形成SiOx膜;
S3、重复步骤S1~S2,形成所述隧穿氧化层。
4.根据权利要求3所述的隧穿氧化层的制备方法,其特征在于,所述射频电源为40kHz-400kHz的方形波或者正弦波电源。
5.根据权利要求3所述的隧穿氧化层的制备方法,其特征在于,所述沉积的温度为80℃-400℃;
和/或,所述硅前驱体为有机硅源或硅烷;所述氧源为氧气或笑气。
6.根据权利要求3所述的隧穿氧化层的制备方法,其特征在于,所述SiOx膜的沉积次数为1次-400次;和/或,所述隧穿氧化层的厚度为1nm-2nm。
7.一种N型双面太阳能晶硅电池的制备方法,其特征在于,其包括以下步骤:
将N型硅片依次进行清洗制绒、硼扩散、碱抛光;
在碱抛光后的N型硅片的正面依次形成P型掺杂层、钝化层、减反射层;
在碱抛光后的N型硅片的背面先采用如权利要求1至6中任一项所述的隧穿氧化层的制备方法形成隧穿氧化层,再形成N型掺杂多晶硅层,进行退火,清洗后,形成减反射层。
8.根据权利要求7所述的N型双面太阳能晶硅电池的制备方法,其特征在于,所述退火的温度为850℃-1100℃。
9.根据权利要求7所述的N型双面太阳能晶硅电池的制备方法,其特征在于,所述碱抛光的方法包括依次进行预清洗、水洗、刻蚀、水洗、碱洗、水洗、酸洗和水洗,其中碱洗采用NaOH或KOH与H2O2按照体积比1:9-10配制而成的碱液,碱洗温度为45°-55°。
10.一种N型双面太阳能晶硅电池,其特征在于,其包括N型硅片,以及依次叠加位于所述N型硅片正面的P型掺杂层、钝化层、减反射层,依次叠加于所述N型硅片背面的隧穿氧化层、N型掺杂多晶硅层和减反射层,所述隧穿氧化层按照如权利要求1至6中任一项所述的隧穿氧化层的制备方法形成。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111650174.9A CN114373831A (zh) | 2021-12-30 | 2021-12-30 | 一种隧穿氧化层、n型双面太阳能晶硅电池及制备方法 |
EP22908852.1A EP4254517A1 (en) | 2021-12-30 | 2022-07-27 | Tunneling oxide layer, n-type double-sided solar crystalline silicon battery, and preparation methods |
PCT/CN2022/108295 WO2023124046A1 (zh) | 2021-12-30 | 2022-07-27 | 一种隧穿氧化层、n型双面太阳能晶硅电池及制备方法 |
AU2022424722A AU2022424722A1 (en) | 2021-12-30 | 2022-07-27 | Tunneling oxide layer, n-type double-sided solar crystalline silicon battery, and preparation methods |
US18/548,380 US20240145610A1 (en) | 2021-12-30 | 2022-07-27 | Tunnel oxide layer, n-type bifacial crystalline silicon solar cell and method for manufacturing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111650174.9A CN114373831A (zh) | 2021-12-30 | 2021-12-30 | 一种隧穿氧化层、n型双面太阳能晶硅电池及制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN114373831A true CN114373831A (zh) | 2022-04-19 |
Family
ID=81142727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111650174.9A Pending CN114373831A (zh) | 2021-12-30 | 2021-12-30 | 一种隧穿氧化层、n型双面太阳能晶硅电池及制备方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20240145610A1 (zh) |
EP (1) | EP4254517A1 (zh) |
CN (1) | CN114373831A (zh) |
AU (1) | AU2022424722A1 (zh) |
WO (1) | WO2023124046A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114914328A (zh) * | 2022-05-11 | 2022-08-16 | 通威太阳能(眉山)有限公司 | 一种双面太阳能电池及其制备方法 |
WO2023124046A1 (zh) * | 2021-12-30 | 2023-07-06 | 通威太阳能(眉山)有限公司 | 一种隧穿氧化层、n型双面太阳能晶硅电池及制备方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116741892B (zh) * | 2023-08-16 | 2023-11-07 | 常州亿晶光电科技有限公司 | 一种硼掺杂选择性发射极电池的制备方法 |
CN117476817B (zh) * | 2023-12-28 | 2024-03-29 | 无锡松煜科技有限公司 | 具有低电子-空穴复合率的叠层钝化结构的制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009200360A (ja) * | 2008-02-22 | 2009-09-03 | Tkx:Kk | シリコン部材の表面処理方法 |
CN105322047A (zh) * | 2014-05-28 | 2016-02-10 | 茂迪股份有限公司 | 太阳能电池的制造方法 |
CN112928061A (zh) * | 2019-12-05 | 2021-06-08 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
CN214176054U (zh) * | 2020-12-25 | 2021-09-10 | 湖南红太阳光电科技有限公司 | 一种制备氧化硅和掺杂多晶硅的一体式设备 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080305646A1 (en) * | 2007-06-08 | 2008-12-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Atomic layer deposition |
CN102487004A (zh) * | 2010-12-01 | 2012-06-06 | 中芯国际集成电路制造(上海)有限公司 | 利用化学气相淀积填充隔离槽的方法 |
CN107527806A (zh) * | 2017-09-29 | 2017-12-29 | 睿力集成电路有限公司 | 介电薄膜、介电层结构及制作方法 |
CN110205608A (zh) * | 2019-07-09 | 2019-09-06 | 深圳扑浪创新科技有限公司 | 一种光致发光的纳米材料薄膜边缘的保护方法 |
CN114373831A (zh) * | 2021-12-30 | 2022-04-19 | 通威太阳能(眉山)有限公司 | 一种隧穿氧化层、n型双面太阳能晶硅电池及制备方法 |
-
2021
- 2021-12-30 CN CN202111650174.9A patent/CN114373831A/zh active Pending
-
2022
- 2022-07-27 AU AU2022424722A patent/AU2022424722A1/en active Pending
- 2022-07-27 EP EP22908852.1A patent/EP4254517A1/en active Pending
- 2022-07-27 WO PCT/CN2022/108295 patent/WO2023124046A1/zh active Application Filing
- 2022-07-27 US US18/548,380 patent/US20240145610A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009200360A (ja) * | 2008-02-22 | 2009-09-03 | Tkx:Kk | シリコン部材の表面処理方法 |
CN105322047A (zh) * | 2014-05-28 | 2016-02-10 | 茂迪股份有限公司 | 太阳能电池的制造方法 |
CN112928061A (zh) * | 2019-12-05 | 2021-06-08 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
CN214176054U (zh) * | 2020-12-25 | 2021-09-10 | 湖南红太阳光电科技有限公司 | 一种制备氧化硅和掺杂多晶硅的一体式设备 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023124046A1 (zh) * | 2021-12-30 | 2023-07-06 | 通威太阳能(眉山)有限公司 | 一种隧穿氧化层、n型双面太阳能晶硅电池及制备方法 |
CN114914328A (zh) * | 2022-05-11 | 2022-08-16 | 通威太阳能(眉山)有限公司 | 一种双面太阳能电池及其制备方法 |
CN114914328B (zh) * | 2022-05-11 | 2023-09-05 | 通威太阳能(眉山)有限公司 | 一种双面太阳能电池及其制备方法 |
WO2023216652A1 (zh) * | 2022-05-11 | 2023-11-16 | 通威太阳能(眉山)有限公司 | 一种双面太阳能电池及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
EP4254517A1 (en) | 2023-10-04 |
AU2022424722A1 (en) | 2023-09-21 |
US20240145610A1 (en) | 2024-05-02 |
WO2023124046A1 (zh) | 2023-07-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN113972302B (zh) | TOPCon电池及其制备方法和电器设备 | |
CN114373831A (zh) | 一种隧穿氧化层、n型双面太阳能晶硅电池及制备方法 | |
CN109273557B (zh) | 一种太阳能电池用硅片的处理方法 | |
CN111192935B (zh) | 一种管式perc太阳能电池背钝化结构及其制备方法 | |
CN113611756B (zh) | 一种N型TOPCon电池及其制备方法 | |
CN109004038B (zh) | 太阳能电池及其制备方法和光伏组件 | |
CN113964240A (zh) | 一种n型双面太阳能电池的制备方法 | |
CN115394863A (zh) | 一种太阳电池及其制备方法 | |
CN111261751A (zh) | 一种单面非晶硅的沉积方法 | |
CN116666479B (zh) | 一种双面发电的高效选择性发射极晶硅电池及其制备方法 | |
CN114606478B (zh) | 一种管式pecvd制备超薄氧化硅层及钝化接触结构的方法、钝化接触结构 | |
CN114583016A (zh) | 一种TOPCon电池及其制备方法 | |
CN116014032A (zh) | 太阳电池的制备方法 | |
CN115224159A (zh) | 一种高效TOPCon太阳电池及其制备方法 | |
CN113193082A (zh) | 一种TOPCon太阳能电池的制备方法 | |
CN114597267A (zh) | 一种TOPCon电池及其制备方法 | |
CN109802009B (zh) | 一种超薄晶体硅双面太阳能电池的制备方法 | |
CN117199186B (zh) | 一种N-TOPCon电池的制作方法 | |
CN117457777A (zh) | 一种太阳能电池及其制备方法与应用 | |
CN116314453A (zh) | 一种TOPCon太阳能电池的制备方法及电池 | |
CN116130539A (zh) | 一种叠层固态掺杂源结构及太阳能电池制备方法 | |
CN118007096A (zh) | 一种TOPCon太阳能电池的LPCVD工艺 | |
CN116779719A (zh) | 一种基于原子层沉积技术的钽掺杂氧化钛薄膜及其制备方法和应用 | |
CN117199186A (zh) | 一种N-TOPCon电池的制作方法 | |
CN116344630A (zh) | 一种太阳能电池的窗口层、太阳能电池及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20220419 |