WO2023216652A1 - 一种双面太阳能电池及其制备方法 - Google Patents
一种双面太阳能电池及其制备方法 Download PDFInfo
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- WO2023216652A1 WO2023216652A1 PCT/CN2023/073917 CN2023073917W WO2023216652A1 WO 2023216652 A1 WO2023216652 A1 WO 2023216652A1 CN 2023073917 W CN2023073917 W CN 2023073917W WO 2023216652 A1 WO2023216652 A1 WO 2023216652A1
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- crystalline silicon
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- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 162
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 162
- 239000010703 silicon Substances 0.000 claims abstract description 162
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000002161 passivation Methods 0.000 claims abstract description 28
- 230000008021 deposition Effects 0.000 claims abstract description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical group [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 23
- 238000000137 annealing Methods 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 239000002994 raw material Substances 0.000 claims description 16
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 239000011574 phosphorus Substances 0.000 claims description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 11
- 229910052796 boron Inorganic materials 0.000 claims description 11
- 229910000077 silane Inorganic materials 0.000 claims description 11
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000007800 oxidant agent Substances 0.000 claims description 7
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- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 6
- 239000005922 Phosphane Substances 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 235000013842 nitrous oxide Nutrition 0.000 claims description 5
- 229910000064 phosphane Inorganic materials 0.000 claims description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N phosphane group Chemical group P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- UXCDUFKZSUBXGM-UHFFFAOYSA-N phosphoric tribromide Chemical compound BrP(Br)(Br)=O UXCDUFKZSUBXGM-UHFFFAOYSA-N 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims 1
- KBMBVTRWEAAZEY-UHFFFAOYSA-N trisulfane Chemical compound SSS KBMBVTRWEAAZEY-UHFFFAOYSA-N 0.000 claims 1
- 238000002679 ablation Methods 0.000 abstract description 11
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- 238000005215 recombination Methods 0.000 abstract description 11
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- -1 monohydrogen atoms Chemical group 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 33
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 14
- 239000003513 alkali Substances 0.000 description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (11)
- 一种双面太阳能电池的制备方法,其特征在于,其包括以下步骤:取其中一面附着有氧化硅掺杂层,另一面附着有第一晶硅掺杂层的硅片,以硅源为原料,在所述氧化硅掺杂层的表面沉积本征硅膜;使用等离子气体轰击所述本征硅膜,重复沉积的操作和用等离子气体轰击的操作0-50次,形成本征硅层,重复0次是只进行一次沉积和用等离子气体轰击的操作;再以硅源和第二掺杂源为原料,在所述本征硅层的表面沉积第二晶硅掺杂层;所述硅片为N型,所述第二晶硅掺杂层为N型,所述第一晶硅掺杂层为P型;或所述硅片为P型,所述第二晶硅掺杂层为P型,所述第一晶硅掺杂层为N型。
- 根据权利要求1所述的双面太阳能电池的制备方法,其特征在于,所述使用等离子气体轰击所述本征硅时,轰击时间为0.1s至600s;和/或,所述等离子气体为氩气、氮气或氢气中的至少一种。
- 根据权利要求1或2所述的双面太阳能电池的制备方法,其特征在于,在形成所述第二晶硅掺杂层后,还包括退火处理的步骤,退火温度为600℃至1000℃,退火时间为5min至35min。
- 根据权利要求1至3中的任一项所述的双面太阳能电池的制备方法,其特征在于,其还包括以下步骤:以氮化硅为原料,在所述第二晶硅掺杂层的表面沉积减反射层。
- 根据权利要求1至3中的任一项所述的双面太阳能电池的制备方法,其特征在于,所述第一晶硅掺杂层的制备步骤包括:以第一掺杂源和所述硅源为原料,在所述硅片的表面扩散推结形成第一晶硅掺杂层,可选地,所述第一掺杂源为硼源;和/或,所述氧化硅掺杂层的制备步骤包括:以氧化剂和所述硅源为原料,在所述硅片的其中一面沉积所述氧化硅掺杂层,可选地,所述氧化剂为笑气、氧气、臭氧中的一种或多种。
- 根据权利要求5所述的双面太阳能电池的制备方法,其特征在于,其还包括以下步骤:以氮化硅为原料,在所述第一晶硅掺杂层的表面沉积减反射层。
- 根据权利要求6所述的双面太阳能电池的制备方法,其特征在于,在形成所述减反射层之后,还分别在所述减反射层的表面丝网印刷栅线并烧结制成正负电极,烧结的温度为830℃。
- 根据权利要求1至7中的任一项所述的双面太阳能电池的制备方法,其特征在于,所述第二掺杂源为磷源,可选地,所述磷源为磷烷、三氯氧磷、三溴氧磷中的至少一种;和/或,所述硅源为硅烷。
- 一种双面太阳能电池,其特征在于,其由根据权利要求1至8中的任一项所述的双 面太阳能的制备方法制得,所述双面太阳能电池包括依次叠加设置的第一晶硅掺杂层、硅片、氧化硅掺杂层、本征硅层和第二晶硅掺杂层。
- 根据权利要求9所述的双面太阳能电池,其特征在于,所述本征硅层的厚度不大于200nm。
- 根据权利要求9或10所述的双面太阳能电池,其特征在于,所述第二晶硅掺杂层背离所述本征硅层的表面还叠加设置有减反射层,所述第一晶硅掺杂层背离所述硅片的表面还由近至远依次叠加设置有钝化层、减反射层。
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AU2023266473A AU2023266473A1 (en) | 2022-05-11 | 2023-01-31 | Bifacial solar cell and preparation method therefor |
EP23802428.5A EP4365966A1 (en) | 2022-05-11 | 2023-01-31 | Bifacial solar cell and preparation method therefor |
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CN114373831A (zh) * | 2021-12-30 | 2022-04-19 | 通威太阳能(眉山)有限公司 | 一种隧穿氧化层、n型双面太阳能晶硅电池及制备方法 |
CN114914328A (zh) * | 2022-05-11 | 2022-08-16 | 通威太阳能(眉山)有限公司 | 一种双面太阳能电池及其制备方法 |
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