CN114175225A - 负载锁定装置 - Google Patents
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- CN114175225A CN114175225A CN202080051124.6A CN202080051124A CN114175225A CN 114175225 A CN114175225 A CN 114175225A CN 202080051124 A CN202080051124 A CN 202080051124A CN 114175225 A CN114175225 A CN 114175225A
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Abstract
负载锁定装置具备负载锁定室和在所述负载锁定室中保持基板的基板保持构造。所述基板保持构造具有与所述基板相向的相向面,并构成为能够使气体在所述基板与所述相向面之间的空间流动。在由所述基板保持构造保持所述基板的状态下,位于比所述相向面的外缘靠内侧的位置的部分与所述基板的距离大于所述相向面的所述外缘与所述基板的距离。
Description
技术领域
本发明涉及负载锁定装置。
背景技术
在专利文献1中公开了一种真空处理装置,所述真空处理装置具有负载锁定室、配置在负载锁定室中的晶片台、以及使晶片台升降的机构。晶片台具有凸形状。
在专利文献1所记载的具有晶片台那样的构造的基板保持构造中,在向负载锁定室形成气体的流动时,晶片台可能产生驻涡(standing vortex)。这样的驻涡例如会导致颗粒从基板的下方向基板的上方飞扬,从而可能会使颗粒附着于基板。
现有技术文献
专利文献
专利文献1:日本特开平5-140743号公报
发明内容
发明所要解决的课题
本发明提供一种有利于防止颗粒向基板附着的技术。
本发明的一方面是一种负载锁定装置,所述负载锁定装置具备负载锁定室和在所述负载锁定室中保持基板的基板保持构造,所述基板保持构造具有与所述基板相向的相向面,并构成为能够使气体在所述基板与所述相向面之间的空间流动,在利用所述基板保持构造保持所述基板的状态下,位于比所述相向面的外缘靠内侧的位置的部分与所述基板的距离大于所述相向面的所述外缘与所述基板的距离。
附图说明
图1是示意性地示出包括本发明的第一实施方式的负载锁定装置的处理装置的结构的图。
图2是例示包括本发明的第一实施方式的负载锁定装置的处理装置的动作的图。
图3是例示包括本发明的第一实施方式的负载锁定装置的处理装置的动作的图。
图4是例示包括本发明的第一实施方式的负载锁定装置的处理装置的动作的图。
图5是例示包括本发明的第一实施方式的负载锁定装置的处理装置的动作的图。
图6是例示包括本发明的第二实施方式的负载锁定装置的处理装置的动作的图。
图7是例示包括本发明的第三实施方式的负载锁定装置的处理装置的动作的图。
图8是例示包括本发明的第四实施方式的负载锁定装置的处理装置的动作的图。
图9是本发明的第五实施方式的负载锁定装置中的第一构件的示意性俯视图。
图10是本发明的第一、第五实施方式的负载锁定装置中的基板保持构造被放大的示意性侧视图。
图11是说明课题的图。
图12是说明课题的图。
图13A是例示基板保持构造的图。
图13B是例示图13A的基板保持构造的第一构件或相向面的形状的图。
图14A是示出基板的一例的图。
图14B是示出基板的另一例的图。
图15是示出负载锁定室、延长室及气体分散部的配置的俯视图。
具体实施方式
以下,参照附图详细说明实施方式。此外,以下的实施方式并不限定权利要求书所涉及的发明。在实施方式中记载有多个特征,但这些多个特征并非全部都是发明的必要构件,另外,多个特征也可以任意地组合。而且,在附图中,对相同或同样的结构标注相同的附图标记,并省略重复的说明。
图1示意性地示出包括本发明的第一实施方式的负载锁定装置100的处理装置的结构。负载锁定装置100能够具有配置在装载室30与传递室20之间的负载锁定室110。装载室30能够维持为大气环境。在装载室30中,例如能够从载体提供基板S。或者,能够从前处理装置向装载室30提供基板S。装载室30能够在其顶部具备过滤器32,能够通过过滤器32向装载室30的内部空间供给下降流。在装载室30配置有搬运机器人34,基板S能够由搬运机器人34搬运。搬运机器人34能够通过阀50将基板S从装载室30搬运至负载锁定室110。被搬运来了基板S的负载锁定室110被充分减压。之后,配置于传递室20的搬运机器人22能够通过阀40将基板S从负载锁定室110搬运至传递室20。之后,搬运机器人22能够通过阀60从传递室20向减压处理装置10搬运基板S。减压处理装置10例如能够是CVD装置、PVD装置、蚀刻装置、等离子体处理装置及电子束描绘装置中的任一个。
负载锁定室110能够具有与传递室20连接的第一搬运口111和与装载室30连接的第二搬运口112,所述传递室20与减压处理装置10连接。在一例中,第一搬运口111的高度(例如,第一搬运口111的下端的高度)比第二搬运口112的高度(例如,第二搬运口112的下端的高度)低。第一搬运口111通过阀40与传递室20的内部空间能够连通地配置。第二搬运口112通过阀50与装载室30的内部空间能够连通地配置。
负载锁定装置100能够具备向负载锁定室110导入气体(例如清洁干燥空气或氮气)的气体导入部160。气体导入部160例如能够配置于通过第一搬运口111将基板S搬运至传递室20的状态下的基板保持构造120与传递室20之间的路径的上方。在一例中,气体导入部160能够配置于第一搬运口111的上方。气体导入部160能够包括使气体分散于负载锁定室110的内部空间的气体分散部162。气体分散部162的至少一部分能够配置于负载锁定室110的内部。气体分散部162能够配置于与第二搬运口112相向的位置。气体导入部160能够包括调整气体的导入的流量调整阀164。气体分散部162能够具有柱形状部,负载锁定室110的内侧面能够包括与该柱形状部分离且沿着该柱形状部的弯曲面。该柱形状部能够具有圆柱形状,该弯曲面能够构成圆筒面的一部分。
负载锁定装置100能够具备在负载锁定室110中保持基板S的基板保持构造120。基板保持构造120能够具有与基板S相向的相向面OS,构成为能够使气体在基板S与相向面OS之间的空间流动。如图10放大所示,基板保持构造120能够具有如下构造:在利用基板保持构造120保持基板S的状态下,位于比相向面OS的外缘EE靠内侧的位置的部分PP与基板S的距离大于相向面OS的外缘EE与基板S的距离。通过模拟确认到:如图10中虚线箭头示意性地示出的那样,这样的构造的抑制在负载锁定室110的内部空间中在气体的流动中形成驻涡的效果高。在此,气体的流动能够通过由气体导入部160向负载锁定室110的内部空间导入气体而形成,和/或,通过如后所述那样利用泵150等将气体从该内部空间排出而形成。因此,在压力在从大气压到高真空为止的大范围内变化的负载锁定室110中,必然能够形成气体的流动。
另一方面,如图11中虚线箭头示意性地示出的那样,在保持基板S的基板保持构造SH具有妨碍气体流动那样的壁的情况下,可能在气体的流动中形成驻涡。这样的驻涡可能会使颗粒飞扬而使该颗粒附着于基板S。另外,通过模拟确认到:如图12的虚线箭头示意性地示出的那样,即使在保持基板S的基板保持构造SH’具有与基板S的下表面平行的平面的相向面OS’的情况下,也会在气体的流动中形成驻涡。这样的驻涡可能会使颗粒飞扬而使该颗粒附着于基板S。
返回到图1继续进行说明。基板保持构造120能够包括具有相向面OS的第一构件125和具有与第一构件125的下表面LS相向的上表面US的第二构件126。基板保持构造120能够包括以支承基板S的方式与基板S接触的多个接触部124。第二构件126能够支承第一构件125及多个接触部124。第二构件126的上表面US能够具有沿着第一构件125的下表面LS的形状。这样的构造能够使气体顺畅地流动。在此,在由相互相向的第一构件125(下表面LS)和第二构件126(上表面US)规定的空间不作为气体的流路而存在的构造、即在该空间中填充有固体那样的构造中,气体的流动会受到阻碍,可能产生驻涡。另一方面,第一构件125(下表面LS)与第二构件126(上表面US)相互相向的构造有利于抑制驻涡的产生。
负载锁定装置100能够包括驱动机构130。驱动机构130能够以使基板保持构造120升降的方式配置于负载锁定室110的下方。驱动机构130能够经由连结构件122与基板保持构造120连结。
负载锁定室110能够具备从负载锁定室110的下部向侧方延长的延长室140和配置于延长室140的下方并经由延长室140排出负载锁定室110的气体的泵150。延长室140能够具有在从基板保持构造120的铅垂下方偏离的位置具有开口142的底面144。泵150能够与开口142连接。虽未图示,但能够在泵150与开口142之间配置有阀。
泵150例如能够包括旋转泵和配置于该旋转泵与开口142之间的涡轮分子泵。涡轮分子泵的涡轮在动作时高速旋转。当由涡轮分子泵吸引的颗粒与涡轮碰撞时,可能会从涡轮弹开。另外,不论泵150是否为涡轮分子泵,泵150本身都可能会产生颗粒。因此,优选将泵150与设置于从负载锁定室110的下部向侧方延长的延长室140的底面144的开口142连接。由此,能够减少来自泵150的颗粒通过基板保持构造120的侧面与负载锁定室的内侧面的间隙G而到达基板S的上方空间并附着于基板S的情况。
能够在配置于负载锁定室110的第二搬运口112与装载室30之间的阀50连接气体排出管路52。能够通过气体排出管路52将第二搬运口112附近的空间的气体排出到负载锁定室110的外部空间。能够在气体排出管路52连接未图示的泵。
第二搬运口112的至少一部分能够配置于延长室140的上方(铅垂上方)。或者,延长室140的至少一部分能够配置在第二搬运口112与泵150之间。这样的结构有利于缩小负载锁定装置100的占用空间。
装载室30的至少一部分能够配置于延长室140的上方(铅垂上方)。或者,延长室140的至少一部分能够配置在装载室30与泵150之间。这样的结构也有利于缩小负载锁定装置100的占用空间。
图15是示出负载锁定室110、延长室140及气体分散部162的配置的俯视图。该俯视图也能够理解为相对于配置有负载锁定装置100的地板的正投影。基板保持件120在该俯视图或该正投影中能够位于气体分散部162与延长室140之间。或者,开口142在该俯视图或该正投影中能够位于气体分散部162与延长室140之间。
基板保持构造120的侧面与负载锁定室110的内侧面的间隙G的面积优选小于第二搬运口112的截面积。间隙G的面积更优选小于第二搬运口112的截面积的1/2、1/3或1/4。这样的结构有利于在从装载室30通过第二搬运口112向负载锁定室110的内部空间搬运基板S时,使从气体分散部162导入到负载锁定室110的内部空间的气体通过第二搬运口112及气体排出管路52排出的量大于从基板S的上方的空间通过间隙G向基板保持构造120的下方的空间排出的量。这对于抑制颗粒从装载室30通过第二搬运口112侵入到负载锁定室110的内部空间是有效的。
基板保持构造120的侧面与负载锁定室110的内侧面的间隙G的面积优选小于设置于延长室140的底面144的开口142的截面积。这样的结构有利于减少来自泵150的颗粒通过间隙G而到达基板S的上方的空间并附着于基板S的情况。间隙G的面积优选小于负载锁定室110与延长室140之间的连接部分146的截面积(铅垂面中的截面积)。这样的结构也有利于减少来自泵150的颗粒通过间隙G而到达基板S的上方的空间并附着于基板S的情况。
在图2、图3、图4及图5中,例示地示出图1所示的处理装置的动作。首先,能够一边从气体导入部160向负载锁定室110的内部空间导入(供给)气体,一边利用泵150将该内部空间的气体排出到负载锁定室110的外部空间。此时,能够使气体从气体导入部160向该内部空间的导入量比基于泵150的气体的排出量多,以使该内部空间的压力上升。如果该内部空间的压力成为大气压以上,则如图2所示,阀50打开,并且开始利用气体排出管路52排出气体。之后,能够利用搬运机器人34,从装载室30向负载锁定室110的内部空间的基板保持构造120搬运基板S。
之后,如图3所示,阀50关闭,基板保持构造120能够被驱动机构130向上方驱动。另外,在从气体导入部160向负载锁定室110的内部空间导入气体的状态下,基于泵150的来自该内部空间的气体的排出量提高,该内部空间被减压。之后,停止利用气体导入部160向该内部空间导入气体,能够进一步提高基于泵150的来自该内部空间的气体的排出量。
若负载锁定室110的内部空间的压力被充分地减压,则如图4所示,基板保持构造120能够被驱动机构130向下方驱动直到用于将基板S向传递室20搬运的高度。之后,如图5所示,阀40打开,利用搬运机器人22将基板S从负载锁定室110的内部空间搬运至传递室20,进而能够搬运至减压处理装置10。然后,阀40关闭,并且在减压处理装置10中处理基板S。
之后,阀40打开,如图5所示,减压处理装置10的基板S能够利用搬运机器人22搬运至负载锁定室110的内部空间。之后,阀40能够关闭。
之后,能够一边从气体导入部160向负载锁定室110的内部空间导入气体,一边利用泵150将该内部空间的气体排出到负载锁定室110的外部空间。此时,能够使气体从气体导入部160向该内部空间的导入量比基于泵150的气体的排出量多,以使该内部空间的压力上升。如果该内部空间的压力成为大气压以上,则如图2所示,阀50打开,并且开始利用气体排出管路52排出气体。之后,能够利用搬运机器人34,从负载锁定室110的内部空间的基板保持构造120向装载室30搬运基板S。之后,阀50关闭,能够停止利用气体排出管路52排出气体。
如图1、图3、图4所例示的那样,基板保持构造120能够以基板S的侧面(外周面)的至少一部分与负载锁定室110的内表面相向的方式保持基板S。在此,由基板保持构造120保持的基板S的侧面(外周面)的该至少一部分能够在与基板S的表面平行的方向上以与负载锁定室110的内表面相向的方式保持基板S。
如图1~图5所例示的那样,基板保持构造120能够配置于负载锁定室110的内部空间中的多个位置。如图1所例示的那样,该多个位置能够包括由基板保持构造120保持的基板S的侧面的一部分与气体分散部162相向的位置。在此,由基板保持构造120保持的基板S的侧面(外周面)的该一部分能够在与基板S的表面平行的方向上与气体分散部162相向。
如图13A所例示的那样,也可以以沿着基板S的表面的表面方向(与XY平面平行的方向)上的基板保持构造120的相向面OS的尺寸DH小于该表面方向上的基板S的尺寸DS的方式构成基板保持构造120。如图13A、图13B所例示的那样,基板保持机构120的部分PP能够在水平面(XY平面)内的预定方向(Y方向)上位于比相向面OS的外缘EE靠内侧的位置。在与该水平面(XY平面)垂直且与预定方向(Y方向)平行的多个平面(与YZ平面平行的多个面)中的每一个平面处剖开的相向面OS的截面能够具有彼此相同的形状。
如图14A所示,由基板保持构造120保持的基板S能够具有矩形形状。或者,如图14B所例示的那样,由基板保持构造120保持的基板S能够具有具备表示基准方位的切口部NT的圆形形状。但是,由基板保持构造120保持的基板S也可以具有其他形状。
图6示意性地示出包括本发明的第二实施方式的负载锁定装置100的处理装置的结构。作为第二实施方式未提及的事项能够遵循第一实施方式。在第二实施方式的负载锁定装置100中,负载锁定室110的顶部包括与基板S的外缘的内侧区域相向的部分601和与基板S的外缘相向的部分602,部分601与基板S的距离大于部分602与基板S的距离。
图7示意性地示出包括本发明的第三实施方式的负载锁定装置100的处理装置的结构。作为第三实施方式未提及的事项能够遵循第一实施方式。在第三实施方式的负载锁定装置100中,负载锁定室110的顶部包括与基板S的外缘的内侧区域相向的部分601和与基板S的外缘相向的部分602,部分601与基板S的距离大于部分602与基板S的距离大。在第三实施方式中,部分601由平滑的曲面构成。
图8示意性地示出包括本发明的第四实施方式的负载锁定装置100的处理装置的结构。作为第四实施方式未提及的事项能够遵循第一实施方式。在第四实施方式中,第一构件125具有波纹叶片形状。波纹叶片形状例如有利于抑制遍及相向面OS与基板S之间的空间那样的较大的涡流。
图9示意性地示出本发明的第五实施方式的负载锁定装置100中的第一构件125的俯视图。在图10中,示意性地示出本发明的第五实施方式的负载锁定装置100中的第一构件125的侧视图。作为第五实施方式未提及的事项能够遵循第一实施方式。在第五实施方式中,在由基板保持构造120保持基板S的状态下,位于比相向面OS的外缘EE靠内侧的位置的部分PP在预定方向DIR上位于比相向面OS的外缘EE靠内侧的位置,第一构件125在与预定方向DIR正交的方向上被分割为多个部分125a、125b。
本发明并不限定于上述实施方式,能够在不脱离发明的精神及范围的情况下进行各种变更及变形。因此,为了公开发明的范围而添加权利要求书。
附图标记说明
100:负载锁定装置、110:负载锁定室、111:第一搬运口、112:第二搬运口、120:基板保持构造、140:延长室、142:开口、144:底面、150:泵、160:气体导入部、162:气体分散部、PP:部分、EE:外缘、OS:相向面。
Claims (19)
1.一种负载锁定装置,所述负载锁定装置具备负载锁定室和在所述负载锁定室中保持基板的基板保持构造,其特征在于,
所述基板保持构造具有与所述基板相向的相向面,并构成为能够使气体在所述基板与所述相向面之间的空间流动,
在利用所述基板保持构造保持所述基板的状态下,位于比所述相向面的外缘靠内侧的位置的部分与所述基板的距离大于所述相向面的所述外缘与所述基板的距离。
2.根据权利要求1所述的负载锁定装置,其特征在于,
所述基板保持构造包括具有所述相向面的第一构件和具有与所述第一构件的下表面相向的上表面的第二构件。
3.根据权利要求2所述的负载锁定装置,其特征在于,
所述基板保持构造还包括以支承所述基板的方式与所述基板接触的多个接触部,所述第二构件支承所述第一构件及所述多个接触部。
4.根据权利要求3所述的负载锁定装置,其特征在于,
所述第二构件的所述上表面具有沿着所述第一构件的所述下表面的形状。
5.根据权利要求3所述的负载锁定装置,其特征在于,
所述第一构件具有波纹叶片形状。
6.根据权利要求3所述的负载锁定装置,其特征在于,
所述部分在预定方向上位于比所述相向面的所述外缘靠内侧的位置,
所述第一构件在与所述预定方向正交的方向上被分割为多个部分。
7.根据权利要求1至6中任一项所述的负载锁定装置,其特征在于,
所述负载锁定室具有与传递室连接的第一搬运口和与装载室连接的第二搬运口,所述传递室与减压处理装置连接,
所述负载锁定装置还具备:
气体导入部,所述气体导入部配置于通过所述第一搬运口将所述基板搬运至所述传递室的状态下的所述基板保持构造与所述传递室之间的路径的上方;以及
气体排出部,所述气体排出部配置成通过所述基板保持构造的下方的空间排出气体。
8.根据权利要求7所述的负载锁定装置,其特征在于,
所述第一搬运口的高度比所述第二搬运口的高度低。
9.根据权利要求7或8所述的负载锁定装置,其特征在于,
所述气体导入部包括使气体分散的气体分散部,
所述气体分散部配置于与所述第二搬运口相向的位置。
10.根据权利要求9所述的负载锁定装置,其特征在于,
所述气体分散部具有柱形状部,所述负载锁定室的内侧面包括与所述柱形状部分离且沿着所述柱形状部的弯曲面。
11.根据权利要求10所述的负载锁定装置,其特征在于,
所述柱形状部具有圆柱形状,所述弯曲面构成圆筒面的一部分。
12.根据权利要求9至11中任一项所述的负载锁定装置,其特征在于,
控制所述气体导入部及所述气体排出部,以便执行在由所述基板保持构造保持的所述基板配置于比所述气体分散部的中心轴高的位置的状态下使所述负载锁定室的压力降低的动作、以及在由所述基板保持构造保持的所述基板配置于比所述气体分散部的中心轴低的位置的状态下使所述负载锁定室的压力降低的动作。
13.根据权利要求7至12中任一项所述的负载锁定装置,其特征在于,
所述负载锁定装置还具备气体排出管路,所述气体排出管路配置成从所述第二搬运口的附近的空间排出气体。
14.根据权利要求1至13中任一项所述的负载锁定装置,其特征在于,
所述基板保持构造以所述基板的侧面的至少一部分与所述负载锁定室的内表面相向的方式保持所述基板。
15.根据权利要求1至8及13中任一项所述的负载锁定装置,其特征在于,
所述负载锁定装置还具备使气体分散于所述负载锁定室的内部空间的气体分散部,
所述基板保持构造以所述基板的侧面的至少一部分与所述负载锁定室的内表面相向的方式保持所述基板,
能够配置所述基板保持构造的位置包括由所述基板保持构造保持的所述基板的侧面的一部分与所述气体分散部相向的位置。
16.根据权利要求1至15中任一项所述的负载锁定装置,其特征在于,
沿着所述基板的表面的表面方向上的所述相向面的尺寸小于所述表面方向上的所述基板的尺寸。
17.根据权利要求1至16中任一项所述的负载锁定装置,其特征在于,
所述部分在水平面内的预定方向上位于比所述相向面的所述外缘靠内侧的位置,
在与所述水平面垂直且与所述预定方向平行的多个平面中的每一个平面处剖开的所述相向面的截面具有彼此相同的形状。
18.根据权利要求1至17中任一项所述的负载锁定装置,其特征在于,
由所述基板保持构造保持的所述基板具有矩形形状。
19.根据权利要求1至17中任一项所述的负载锁定装置,其特征在于,
由所述基板保持构造保持的所述基板具有具备表示基准方位的切口部的圆形形状。
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PCT/JP2019/035248 WO2021044623A1 (ja) | 2019-09-06 | 2019-09-06 | ロードロック装置 |
JPPCT/JP2019/035248 | 2019-09-06 | ||
PCT/JP2020/033161 WO2021045070A1 (ja) | 2019-09-06 | 2020-09-02 | ロードロック装置 |
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US (1) | US20220139761A1 (zh) |
EP (1) | EP4027371A4 (zh) |
JP (3) | JP6818930B1 (zh) |
KR (1) | KR20220025880A (zh) |
CN (1) | CN114175225A (zh) |
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JP3276382B2 (ja) | 1991-11-21 | 2002-04-22 | 東京エレクトロン株式会社 | 真空処理装置および真空処理方法 |
JP2000126581A (ja) | 1998-10-29 | 2000-05-09 | Kokusai Electric Co Ltd | ロードロック装置 |
JP3570930B2 (ja) * | 1999-09-02 | 2004-09-29 | 日本エー・エス・エム株式会社 | ロードロックチャンバーへのガス導入装置 |
JP4118189B2 (ja) * | 2003-05-20 | 2008-07-16 | 株式会社日立ハイテクノロジーズ | ロードロック装置 |
JP2006093543A (ja) * | 2004-09-27 | 2006-04-06 | Tokyo Electron Ltd | 熱処理装置 |
US20100270004A1 (en) * | 2005-05-12 | 2010-10-28 | Landess James D | Tailored profile pedestal for thermo-elastically stable cooling or heating of substrates |
JP5291965B2 (ja) * | 2008-03-25 | 2013-09-18 | 大日本スクリーン製造株式会社 | 熱処理装置 |
US8033771B1 (en) * | 2008-12-11 | 2011-10-11 | Novellus Systems, Inc. | Minimum contact area wafer clamping with gas flow for rapid wafer cooling |
JP2010165841A (ja) * | 2009-01-15 | 2010-07-29 | Tokyo Electron Ltd | 基板冷却ステージ及び半導体製造装置 |
TWI429873B (zh) * | 2010-06-30 | 2014-03-11 | Ulvac Inc | 基板處理裝置及基板冷卻方法 |
WO2012077547A1 (ja) * | 2010-12-09 | 2012-06-14 | 東京エレクトロン株式会社 | ロードロック装置 |
WO2016118285A1 (en) * | 2015-01-23 | 2016-07-28 | Applied Materials, Inc. | New susceptor design to eliminate deposition valleys in the wafer |
US10490437B2 (en) * | 2015-04-07 | 2019-11-26 | Sumco Corporation | Susceptor, vapor deposition apparatus, vapor deposition method and epitaxial silicon wafer |
US9966290B2 (en) * | 2015-07-30 | 2018-05-08 | Lam Research Corporation | System and method for wafer alignment and centering with CCD camera and robot |
JP6598242B2 (ja) | 2015-08-19 | 2019-10-30 | 芝浦メカトロニクス株式会社 | 基板処理装置、および基板処理方法 |
JP6270952B1 (ja) * | 2016-09-28 | 2018-01-31 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体。 |
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US10302976B2 (en) * | 2017-05-09 | 2019-05-28 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method and device for releasing film layer stress of array substrate |
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EP4027371A4 (en) | 2023-10-04 |
TW202249155A (zh) | 2022-12-16 |
JP2021044551A (ja) | 2021-03-18 |
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JP2021082834A (ja) | 2021-05-27 |
TWI776224B (zh) | 2022-09-01 |
WO2021044623A1 (ja) | 2021-03-11 |
JP6842804B1 (ja) | 2021-03-17 |
JP7473493B2 (ja) | 2024-04-23 |
KR20220025880A (ko) | 2022-03-03 |
WO2021045070A1 (ja) | 2021-03-11 |
TW202117899A (zh) | 2021-05-01 |
TWI819723B (zh) | 2023-10-21 |
JP6818930B1 (ja) | 2021-01-27 |
US20220139761A1 (en) | 2022-05-05 |
EP4027371A1 (en) | 2022-07-13 |
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