CN114175225A - Load lock device - Google Patents

Load lock device Download PDF

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Publication number
CN114175225A
CN114175225A CN202080051124.6A CN202080051124A CN114175225A CN 114175225 A CN114175225 A CN 114175225A CN 202080051124 A CN202080051124 A CN 202080051124A CN 114175225 A CN114175225 A CN 114175225A
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CN
China
Prior art keywords
load lock
substrate
gas
holding structure
chamber
Prior art date
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Pending
Application number
CN202080051124.6A
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Chinese (zh)
Inventor
三浦顺
福田直哉
高城信二
下川英利
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Canon Anelva Corp
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Canon Anelva Corp
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Publication date
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Publication of CN114175225A publication Critical patent/CN114175225A/en
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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    • H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
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  • Fats And Perfumes (AREA)
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Abstract

The load lock device includes a load lock chamber and a substrate holding structure for holding a substrate in the load lock chamber. The substrate holding structure has an opposing surface opposing the substrate, and is configured to allow a gas to flow in a space between the substrate and the opposing surface. In a state where the substrate is held by the substrate holding structure, a distance between a portion located inward of an outer edge of the facing surface and the substrate is larger than a distance between the outer edge of the facing surface and the substrate.

Description

Load lock device
Technical Field
The present invention relates to a load lock apparatus.
Background
Patent document 1 discloses a vacuum processing apparatus including a load lock chamber, a wafer stage disposed in the load lock chamber, and a mechanism for lifting and lowering the wafer stage. The wafer stage has a convex shape.
In the substrate holding structure having a structure such as the wafer stage described in patent document 1, when a flow of gas is formed in the load lock chamber, standing vortex (standing vortex) may be generated in the wafer stage. Such standing vortex may cause particles to fly from below the substrate to above the substrate, for example, and may cause the particles to adhere to the substrate.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 5-140743
Disclosure of Invention
Problems to be solved by the invention
The present invention provides a technique advantageous for preventing particles from adhering to a substrate.
An aspect of the present invention is a load lock device including a load lock chamber and a substrate holding structure configured to hold a substrate in the load lock chamber, the substrate holding structure having an opposing surface opposing the substrate and being configured to be capable of flowing a gas in a space between the substrate and the opposing surface, wherein a distance between a portion located inward of an outer edge of the opposing surface and the substrate is larger than a distance between the outer edge of the opposing surface and the substrate in a state where the substrate is held by the substrate holding structure.
Drawings
Fig. 1 is a diagram schematically showing the configuration of a processing device including a load lock device according to a first embodiment of the present invention.
Fig. 2 is a diagram illustrating an operation of a processing device including a load lock device according to a first embodiment of the present invention.
Fig. 3 is a diagram illustrating an operation of a processing device including a load lock device according to a first embodiment of the present invention.
Fig. 4 is a diagram illustrating an operation of a processing device including a load lock device according to a first embodiment of the present invention.
Fig. 5 is a diagram illustrating an operation of a processing device including a load lock device according to a first embodiment of the present invention.
Fig. 6 is a diagram illustrating an operation of a processing device including a load lock device according to a second embodiment of the present invention.
Fig. 7 is a diagram illustrating an operation of a processing device including a load lock device according to a third embodiment of the present invention.
Fig. 8 is a diagram illustrating an operation of a processing device including a load lock device according to a fourth embodiment of the present invention.
Fig. 9 is a schematic plan view of a first member in a load lock device of a fifth embodiment of the present invention.
Fig. 10 is an enlarged schematic side view of a substrate holding structure in the load lock apparatus according to the first and fifth embodiments of the present invention.
Fig. 11 is a diagram for explaining the problem.
Fig. 12 is a diagram for explaining the problem.
Fig. 13A is a diagram illustrating a substrate holding structure.
Fig. 13B is a diagram illustrating the shape of the first member or the facing surface of the substrate holding structure of fig. 13A.
Fig. 14A is a diagram illustrating an example of a substrate.
Fig. 14B is a diagram showing another example of the substrate.
Fig. 15 is a plan view showing the arrangement of the load lock chamber, the extension chamber, and the gas dispersion unit.
Detailed Description
Hereinafter, the embodiments will be described in detail with reference to the drawings. The following embodiments do not limit the invention according to the claims. In the embodiments, a plurality of features are described, but not all of the plurality of features are essential members of the invention, and a plurality of features may be arbitrarily combined. In the drawings, the same or similar components are denoted by the same reference numerals, and redundant description thereof is omitted.
Fig. 1 schematically shows the structure of a processing apparatus including a load lock apparatus 100 of a first embodiment of the present invention. The load lock apparatus 100 can have a load lock chamber 110 disposed between the loading chamber 30 and the transfer chamber 20. The loading chamber 30 can be maintained in an atmospheric environment. In the loading chamber 30, the substrate S can be supplied from a carrier, for example. Alternatively, the substrate S can be supplied from the front processing apparatus to the loading chamber 30. The loading chamber 30 may include a filter 32 at a top thereof, and a downflow may be supplied to the internal space of the loading chamber 30 through the filter 32. A transfer robot 34 is disposed in the loading chamber 30, and the substrate S can be transferred by the transfer robot 34. The transfer robot 34 can transfer the substrate S from the load lock chamber 110 to the load lock chamber 30 through the valve 50. The load lock chamber 110, which has conveyed the substrate S, is sufficiently depressurized. Thereafter, the transfer robot 22 disposed in the transfer chamber 20 can transfer the substrate S from the load lock chamber 110 to the transfer chamber 20 through the valve 40. Thereafter, the transfer robot 22 can transfer the substrate S from the transfer chamber 20 to the vacuum processing apparatus 10 through the valve 60. The vacuum processing apparatus 10 may be any of a CVD apparatus, a PVD apparatus, an etching apparatus, a plasma processing apparatus, and an electron beam writing apparatus, for example.
The load lock chamber 110 may have a first transfer port 111 connected to the transfer chamber 20 and a second transfer port 112 connected to the load lock chamber 30, and the transfer chamber 20 may be connected to the reduced pressure processing apparatus 10. In one example, the height of the first transfer port 111 (e.g., the height of the lower end of the first transfer port 111) is lower than the height of the second transfer port 112 (e.g., the height of the lower end of the second transfer port 112). The first transfer port 111 is disposed so as to be able to communicate with the internal space of the transfer chamber 20 through the valve 40. The second transfer port 112 is disposed so as to be able to communicate with the internal space of the loading chamber 30 through the valve 50.
The load lock apparatus 100 may include a gas introduction portion 160 that introduces a gas (e.g., clean dry air or nitrogen gas) into the load lock chamber 110. The gas introduction unit 160 may be disposed, for example, above a path between the substrate holding structure 120 and the transfer chamber 20 in a state where the substrate S is transferred to the transfer chamber 20 through the first transfer port 111. In one example, the gas introduction unit 160 may be disposed above the first transfer port 111. The gas introduction portion 160 can include a gas dispersion portion 162 that disperses gas in the interior space of the load lock chamber 110. At least a portion of the gas dispersion portion 162 may be disposed inside the load lock chamber 110. The gas dispersion unit 162 can be disposed at a position facing the second conveyance port 112. The gas introduction portion 160 may include a flow rate adjustment valve 164 that adjusts introduction of the gas. The gas dispersion portion 162 can have a cylindrical shape portion and the inner side surface of the load lock chamber 110 can include a curved surface separate from and along the cylindrical shape portion. The cylindrical portion can have a cylindrical shape, and the curved surface can constitute a portion of a cylindrical surface.
The load lock apparatus 100 may include a substrate holding structure 120 for holding the substrate S in the load lock chamber 110. The substrate holding structure 120 may have a facing surface OS facing the substrate S, and may be configured to allow a gas to flow in a space between the substrate S and the facing surface OS. As enlarged in fig. 10, the substrate holding structure 120 can have the following structure: in a state where the substrate S is held by the substrate holding structure 120, the distance between the substrate S and the portion PP located inside the outer edge EE of the facing surface OS is larger than the distance between the outer edge EE of the facing surface OS and the substrate S. It was confirmed by simulation that: as schematically shown by the dotted arrows in fig. 10, the effect of such a configuration to suppress the formation of standing vortices in the flow of gas in the internal space of the load lock chamber 110 is high. The gas flow can be formed by introducing gas into the internal space of the load lock chamber 110 through the gas introduction unit 160, and/or by discharging gas from the internal space through the pump 150 or the like as described later. Therefore, in the load lock chamber 110 in which the pressure varies in a wide range from atmospheric pressure to high vacuum, the flow of gas can be formed inevitably.
On the other hand, as schematically shown by the broken line arrows in fig. 11, when the substrate holding structure SH holding the substrate S has a wall that obstructs the flow of the gas, standing vortices may be formed in the flow of the gas. Such standing vortex may cause the particles to fly and adhere to the substrate S. In addition, it was confirmed by simulation that: as schematically shown by the broken line arrows in fig. 12, even in the case where the substrate holding structure SH 'holding the substrate S has the facing surface OS' which is a plane parallel to the lower surface of the substrate S, standing vortices are formed in the flow of the gas. Such standing vortex may cause the particles to fly and adhere to the substrate S.
The description is continued with returning to fig. 1. The substrate holding structure 120 can include a first member 125 having an opposing face OS and a second member 126 having an upper surface US opposing a lower surface LS of the first member 125. The substrate holding structure 120 may include a plurality of contact portions 124 that contact the substrate S so as to support the substrate S. The second member 126 can support the first member 125 and the plurality of contact portions 124. The upper surface US of the second member 126 can have a shape along the lower surface LS of the first member 125. Such a configuration enables smooth flow of gas. Here, in a structure in which a space defined by the first member 125 (lower surface LS) and the second member 126 (upper surface US) facing each other does not exist as a flow path of the gas, that is, a structure in which a solid is filled in the space, the flow of the gas is blocked and trapped vortex may be generated. On the other hand, the configuration in which the first member 125 (lower surface LS) and the second member 126 (upper surface US) face each other is advantageous in suppressing the generation of standing vortex.
The load lock apparatus 100 can include a drive mechanism 130. The driving mechanism 130 may be disposed below the load lock chamber 110 so as to move the substrate holding structure 120 up and down. The drive mechanism 130 can be coupled to the substrate holding structure 120 via the coupling member 122.
The load lock chamber 110 may include an extension chamber 140 extending laterally from a lower portion of the load lock chamber 110, and a pump 150 disposed below the extension chamber 140 and discharging gas from the load lock chamber 110 through the extension chamber 140. The extension chamber 140 may have a bottom surface 144 having an opening 142 at a position offset vertically below the substrate holding structure 120. A pump 150 can be connected to the opening 142. Although not shown, a valve may be disposed between the pump 150 and the opening 142.
The pump 150 may include, for example, a rotary pump and a turbo-molecular pump disposed between the rotary pump and the opening 142. The turbine of the turbomolecular pump rotates at high speed during operation. When particles attracted by the turbomolecular pump collide with the turbine, they may bounce off the turbine. Additionally, whether or not pump 150 is a turbomolecular pump, pump 150 itself may generate particulates. Therefore, the pump 150 is preferably connected to the opening 142 provided in the bottom surface 144 of the extension chamber 140 extending laterally from the lower portion of the load lock chamber 110. This can reduce the possibility that particles from the pump 150 reach the space above the substrate S through the gap G between the side surface of the substrate holding structure 120 and the inner surface of the load lock chamber and adhere to the substrate S.
The gas exhaust line 52 can be connected to the valve 50 disposed between the second transfer port 112 of the load lock chamber 110 and the loading chamber 30. The gas in the space near the second port 112 can be discharged to the outside space of the load lock chamber 110 through the gas discharge line 52. A pump, not shown, can be connected to the gas discharge line 52.
At least a part of the second transfer port 112 can be disposed above (vertically above) the extension chamber 140. Alternatively, at least a portion of the extension chamber 140 can be disposed between the second transfer port 112 and the pump 150. Such a configuration is advantageous for reducing the footprint of the load lock apparatus 100.
At least a part of the loading chamber 30 may be disposed above (vertically above) the extension chamber 140. Alternatively, at least a portion of the extension chamber 140 can be disposed between the loading chamber 30 and the pump 150. Such a configuration also facilitates reducing the footprint of the load lock apparatus 100.
Fig. 15 is a plan view showing the arrangement of the load lock chamber 110, the extension chamber 140, and the gas dispersion unit 162. This top view can also be understood as an orthographic projection with respect to the floor on which the load lock 100 is arranged. The substrate holder 120 can be located between the gas dispersion portion 162 and the extension chamber 140 in the plan view or the orthographic projection. Alternatively, the opening 142 can be located between the gas dispersion portion 162 and the extension chamber 140 in the top view or the orthographic projection.
The area of the gap G between the side surface of the substrate holding structure 120 and the inner surface of the load lock chamber 110 is preferably smaller than the cross-sectional area of the second transfer port 112. The area of the gap G is more preferably smaller than 1/2, 1/3, or 1/4 of the sectional area of the second porthole 112. Such a configuration is advantageous in that, when the substrate S is transferred from the loading chamber 30 to the internal space of the load lock chamber 110 through the second transfer port 112, the amount of gas introduced from the gas dispersing unit 162 into the internal space of the load lock chamber 110 discharged through the second transfer port 112 and the gas discharge line 52 is larger than the amount of gas discharged from the space above the substrate S to the space below the substrate holding structure 120 through the gap G. This is effective for suppressing intrusion of particles from the loading chamber 30 into the inner space of the load lock chamber 110 through the second transfer port 112.
The area of the gap G between the side surface of the substrate holding structure 120 and the inner surface of the load lock chamber 110 is preferably smaller than the cross-sectional area of the opening 142 provided in the bottom surface 144 of the extension chamber 140. Such a structure is advantageous in reducing the case where particles from the pump 150 reach the space above the substrate S through the gap G and adhere to the substrate S. The area of the gap G is preferably smaller than the cross-sectional area (cross-sectional area in the vertical plane) of the connecting portion 146 between the load lock chamber 110 and the extension chamber 140. Such a structure is also advantageous in reducing the case where particles from the pump 150 reach the space above the substrate S through the gap G and adhere to the substrate S.
Fig. 2, 3, 4, and 5 show the operation of the processing device shown in fig. 1 by way of example. First, while gas is introduced (supplied) from the gas introduction portion 160 into the internal space of the load lock chamber 110, the gas in the internal space can be discharged to the external space of the load lock chamber 110 by the pump 150. In this case, the amount of gas introduced into the internal space from the gas introduction portion 160 can be made larger than the amount of gas discharged by the pump 150, so that the pressure in the internal space can be increased. If the pressure in the internal space becomes equal to or higher than the atmospheric pressure, the valve 50 opens as shown in fig. 2, and the gas discharge through the gas discharge line 52 is started. Thereafter, the substrate S can be transferred from the loading chamber 30 to the substrate holding structure 120 in the internal space of the load lock chamber 110 by the transfer robot 34.
Thereafter, as shown in fig. 3, the valve 50 is closed, and the substrate holding structure 120 can be driven upward by the driving mechanism 130. In addition, in a state where the gas is introduced into the internal space of the load lock chamber 110 from the gas introduction portion 160, the discharge amount of the gas from the internal space by the pump 150 is increased, and the internal space is depressurized. After that, the introduction of the gas into the internal space by the gas introduction portion 160 is stopped, and the discharge amount of the gas from the internal space by the pump 150 can be further increased.
When the pressure in the internal space of the load lock chamber 110 is sufficiently reduced, the substrate holding structure 120 can be driven downward by the driving mechanism 130 to a height for transferring the substrate S to the transfer chamber 20, as shown in fig. 4. Thereafter, as shown in fig. 5, the valve 40 is opened, and the substrate S is transferred from the internal space of the load lock chamber 110 to the transfer chamber 20 by the transfer robot 22, and can be further transferred to the vacuum processing apparatus 10. Then, the valve 40 is closed, and the substrate S is processed in the reduced-pressure processing apparatus 10.
Thereafter, the valve 40 is opened, and as shown in fig. 5, the substrate S in the vacuum processing apparatus 10 can be transferred to the internal space of the load lock chamber 110 by the transfer robot 22. Thereafter, the valve 40 can be closed.
Thereafter, while gas is introduced into the internal space of the load lock chamber 110 from the gas introduction unit 160, the gas in the internal space can be discharged to the external space of the load lock chamber 110 by the pump 150. In this case, the amount of gas introduced into the internal space from the gas introduction portion 160 can be made larger than the amount of gas discharged by the pump 150, so that the pressure in the internal space can be increased. If the pressure in the internal space becomes equal to or higher than the atmospheric pressure, the valve 50 opens as shown in fig. 2, and the gas discharge through the gas discharge line 52 is started. Thereafter, the transfer robot 34 can transfer the substrate S from the substrate holding structure 120 in the internal space of the load lock chamber 110 to the load lock chamber 30. Thereafter, the valve 50 is closed, and the gas discharge through the gas discharge line 52 can be stopped.
As illustrated in fig. 1, 3, and 4, the substrate holding structure 120 can hold the substrate S such that at least a part of a side surface (outer peripheral surface) of the substrate S faces an inner surface of the load lock chamber 110. Here, the at least a part of the side surface (outer circumferential surface) of the substrate S held by the substrate holding structure 120 can hold the substrate S so as to face the inner surface of the load lock chamber 110 in a direction parallel to the surface of the substrate S.
As illustrated in fig. 1 to 5, the substrate holding structure 120 can be disposed at a plurality of positions in the internal space of the load lock chamber 110. As illustrated in fig. 1, the plurality of positions may include positions at which a part of the side surface of the substrate S held by the substrate holding structure 120 faces the gas dispersion portion 162. Here, the part of the side surface (outer circumferential surface) of the substrate S held by the substrate holding structure 120 can face the gas dispersion portion 162 in a direction parallel to the surface of the substrate S.
As illustrated in fig. 13A, the substrate holding structure 120 may be configured such that the dimension DH of the facing surface OS of the substrate holding structure 120 in the surface direction (direction parallel to the XY plane) along the surface of the substrate S is smaller than the dimension DS of the substrate S in the surface direction. As illustrated in fig. 13A and 13B, the portion PP of the substrate holding mechanism 120 may be located inward of the outer edge EE of the facing surface OS in the predetermined direction (Y direction) in the horizontal plane (XY plane). The cross sections of the facing surfaces OS taken at each of a plurality of planes (a plurality of planes parallel to the YZ plane) perpendicular to the horizontal plane (XY plane) and parallel to the predetermined direction (Y direction) can have the same shape as each other.
As shown in fig. 14A, the substrate S held by the substrate holding structure 120 can have a rectangular shape. Alternatively, as illustrated in fig. 14B, the substrate S held by the substrate holding structure 120 may have a circular shape having a notch NT indicating the reference orientation. However, the substrate S held by the substrate holding structure 120 may have another shape.
Fig. 6 schematically shows the structure of a processing apparatus including a load lock apparatus 100 of a second embodiment of the present invention. Matters not mentioned as the second embodiment can follow the first embodiment. In the load lock apparatus 100 of the second embodiment, the top of the load lock chamber 110 includes a portion 601 facing the inner region of the outer edge of the substrate S and a portion 602 facing the outer edge of the substrate S, and the portion 601 is spaced apart from the substrate S by a distance greater than the portion 602.
Fig. 7 schematically shows the structure of a processing apparatus including a load lock apparatus 100 according to a third embodiment of the present invention. Matters not mentioned as the third embodiment can follow the first embodiment. In the load lock apparatus 100 of the third embodiment, the top of the load lock chamber 110 includes a portion 601 facing the inner region of the outer edge of the substrate S and a portion 602 facing the outer edge of the substrate S, and the distance between the portion 601 and the substrate S is greater than the distance between the portion 602 and the substrate S. In the third embodiment, the portion 601 is constituted by a smoothly curved surface.
Fig. 8 schematically shows the structure of a processing apparatus including a load lock apparatus 100 according to a fourth embodiment of the present invention. Matters not mentioned as the fourth embodiment can follow the first embodiment. In the fourth embodiment, the first member 125 has a corrugated blade shape. The corrugated blade shape is advantageous, for example, in suppressing a large eddy current extending over a space between the facing surface OS and the substrate S.
Fig. 9 schematically illustrates a top view of the first member 125 in a load lock device 100 according to a fifth embodiment of the present invention. In fig. 10, a side view of a first member 125 in a load lock device 100 according to a fifth embodiment of the present invention is schematically shown. Matters not mentioned as the fifth embodiment can follow the first embodiment. In the fifth embodiment, in a state where the substrate S is held by the substrate holding structure 120, the portion PP located inward of the outer edge EE of the facing surface OS is located inward of the outer edge EE of the facing surface OS in the predetermined direction DIR, and the first member 125 is divided into a plurality of portions 125a and 125b in a direction orthogonal to the predetermined direction DIR.
The present invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the claims are added to disclose the scope of the invention.
Description of the reference numerals
100: load lock device, 110: load lock chamber, 111: first conveyance port, 112: second conveyance port, 120: substrate holding structure, 140: extension chamber, 142: opening, 144: bottom surface, 150: pump, 160: gas introduction portion, 162: gas dispersion section, PP: section, EE: outer edge, OS: facing each other.

Claims (19)

1. A load lock device comprising a load lock chamber and a substrate holding structure for holding a substrate in the load lock chamber,
the substrate holding structure has a facing surface facing the substrate and is configured to allow a gas to flow in a space between the substrate and the facing surface,
in a state where the substrate is held by the substrate holding structure, a distance between a portion located inward of an outer edge of the facing surface and the substrate is larger than a distance between the outer edge of the facing surface and the substrate.
2. The load lock device of claim 1,
the substrate holding structure includes a first member having the facing surface and a second member having an upper surface facing a lower surface of the first member.
3. The load lock device of claim 2,
the substrate holding structure further includes a plurality of contact portions that contact the substrate so as to support the substrate, and the second member supports the first member and the plurality of contact portions.
4. The load lock device of claim 3,
the upper surface of the second member has a shape along the lower surface of the first member.
5. The load lock device of claim 3,
the first member has a corrugated blade shape.
6. The load lock device of claim 3,
the portion is located inward of the outer edge of the facing surface in the predetermined direction,
the first member is divided into a plurality of portions in a direction orthogonal to the predetermined direction.
7. The load lock apparatus according to any one of claims 1 to 6,
the load lock chamber has a first transfer port connected to a transfer chamber and a second transfer port connected to a load chamber, the transfer chamber is connected to a decompression processing device,
the load lock device further includes:
a gas introduction unit disposed above a path between the substrate holding structure and the transfer chamber in a state where the substrate is transferred to the transfer chamber through the first transfer port; and
a gas discharge portion configured to discharge a gas through a space below the substrate holding structure.
8. The load lock device of claim 7,
the height of the first carrying opening is lower than that of the second carrying opening.
9. The load lock apparatus according to claim 7 or 8,
the gas introduction part includes a gas dispersion part for dispersing gas,
the gas dispersion unit is disposed at a position facing the second conveyance port.
10. The load lock device according to claim 9,
the gas dispersion portion has a column-shaped portion, and the inner side surface of the load lock chamber includes a curved surface that is separated from and along the column-shaped portion.
11. The load lock device of claim 10,
the cylindrical portion has a cylindrical shape, and the curved surface constitutes a part of a cylindrical surface.
12. The load lock apparatus according to any one of claims 9 to 11,
the gas introducing unit and the gas discharging unit are controlled so as to perform an operation of reducing the pressure of the load lock chamber in a state where the substrate held by the substrate holding structure is arranged at a position higher than the center axis of the gas dispersing unit, and an operation of reducing the pressure of the load lock chamber in a state where the substrate held by the substrate holding structure is arranged at a position lower than the center axis of the gas dispersing unit.
13. The load lock apparatus according to any one of claims 7 to 12,
the load lock apparatus further includes a gas discharge line configured to discharge gas from a space near the second conveyance port.
14. The load lock apparatus according to any one of claims 1 to 13,
the substrate holding structure holds the substrate such that at least a part of a side surface of the substrate faces an inner surface of the load lock chamber.
15. The load lock apparatus according to any one of claims 1 to 8 and 13,
the load lock apparatus further includes a gas dispersing unit for dispersing gas into the internal space of the load lock chamber,
the substrate holding structure holds the substrate such that at least a part of a side surface of the substrate faces an inner surface of the load lock chamber,
the position where the substrate holding structure can be arranged includes a position where a part of the side surface of the substrate held by the substrate holding structure faces the gas dispersion portion.
16. The load lock apparatus according to any one of claims 1 to 15,
a dimension of the facing surface in a surface direction along a surface of the substrate is smaller than a dimension of the substrate in the surface direction.
17. The load lock apparatus according to any one of claims 1 to 16,
the portion is located inward of the outer edge of the facing surface in a predetermined direction in a horizontal plane,
the cross sections of the facing surfaces taken at each of a plurality of planes perpendicular to the horizontal plane and parallel to the predetermined direction have the same shape as each other.
18. The load lock apparatus according to any one of claims 1 to 17,
the substrate held by the substrate holding structure has a rectangular shape.
19. The load lock apparatus according to any one of claims 1 to 17,
the substrate held by the substrate holding structure has a circular shape having a notch portion indicating a reference orientation.
CN202080051124.6A 2019-09-06 2020-09-02 Load lock device Pending CN114175225A (en)

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PCT/JP2019/035248 WO2021044623A1 (en) 2019-09-06 2019-09-06 Load lock device
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PCT/JP2020/033161 WO2021045070A1 (en) 2019-09-06 2020-09-02 Load lock device

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TWI776224B (en) 2022-09-01
WO2021044623A1 (en) 2021-03-11
JP6842804B1 (en) 2021-03-17
JP7473493B2 (en) 2024-04-23
KR20220025880A (en) 2022-03-03
WO2021045070A1 (en) 2021-03-11
TW202117899A (en) 2021-05-01
TWI819723B (en) 2023-10-21
JP6818930B1 (en) 2021-01-27
US20220139761A1 (en) 2022-05-05
EP4027371A1 (en) 2022-07-13

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