WO2021045070A1 - ロードロック装置 - Google Patents
ロードロック装置 Download PDFInfo
- Publication number
- WO2021045070A1 WO2021045070A1 PCT/JP2020/033161 JP2020033161W WO2021045070A1 WO 2021045070 A1 WO2021045070 A1 WO 2021045070A1 JP 2020033161 W JP2020033161 W JP 2020033161W WO 2021045070 A1 WO2021045070 A1 WO 2021045070A1
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- WO
- WIPO (PCT)
- Prior art keywords
- load lock
- substrate
- lock device
- holding structure
- gas
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 154
- 239000006185 dispersion Substances 0.000 claims description 19
- 230000006837 decompression Effects 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 67
- 239000002245 particle Substances 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Definitions
- the present invention relates to a load lock device.
- Patent Document 1 discloses a vacuum processing apparatus having a load lock chamber, a wafer stage arranged in the load lock chamber, and a mechanism for raising and lowering the wafer stage.
- the wafer stage has a convex shape.
- the wafer stage can generate a standing vortex when forming a gas flow in the load lock chamber.
- a standing vortex for example, causes the particles to fly up from the lower part of the substrate to the upper part of the substrate, and the particles can be attached to the substrate.
- the present invention provides an advantageous technique for preventing particles from adhering to a substrate.
- One aspect of the present invention is a load lock device including a load lock chamber and a substrate holding structure for holding a substrate in the load lock chamber, wherein the substrate holding structure has a facing surface facing the substrate. It is configured so that gas can flow in the space between the substrate and the facing surface, and is located inside the outer edge of the facing surface in a state where the substrate is held by the substrate holding structure. The distance between the portion and the substrate is larger than the distance between the outer edge of the facing surface and the substrate.
- FIG. 5 is an enlarged schematic side view of a substrate holding structure in the load lock device according to the first and fifth embodiments of the present invention.
- 13A is a diagram illustrating the shape of the first member or the facing surface of the substrate holding structure of FIG. 13A.
- FIG. 1 schematically shows the configuration of a processing device including the load lock device 100 of the first embodiment of the present invention.
- the load lock device 100 may have a load lock chamber 110 arranged between the loader chamber 30 and the transfer chamber 20.
- the loader chamber 30 can be maintained in an atmospheric environment.
- the substrate S may be provided by the carrier.
- the loader chamber 30 may be provided with the substrate S from the pretreatment apparatus.
- the loader chamber 30 can be provided with a filter 32 on its ceiling, and downflow can be supplied to the internal space of the loader chamber 30 through the filter 32.
- a transfer robot 34 is arranged in the loader chamber 30, and the substrate S can be transferred by the transfer robot 34.
- the transfer robot 34 can transfer the substrate S from the loader chamber 30 to the load lock chamber 110 through the valve 50.
- the load lock chamber 110 to which the substrate S has been conveyed is sufficiently depressurized.
- the transfer robot 22 arranged in the transfer chamber 20 can transfer the substrate S from the load lock chamber 110 to the transfer chamber 20 through the valve 40.
- the transfer robot 22 can transfer the substrate S from the transfer chamber 20 to the decompression processing device 10 through the valve 60.
- the depressurization processing device 10 can be, for example, any of a CVD device, a PVD device, an etching device, a plasma processing device, and an electron beam drawing device.
- the load lock chamber 110 may have a first transport port 111 connected to the transfer chamber 20 connected to the decompression processing device 10 and a second transport port 112 connected to the loader chamber 30.
- the height of the first transport port 111 (for example, the height of the lower end of the first transport port 111) is higher than the height of the second transport port 112 (for example, the height of the lower end of the second transport port 112).
- the first transfer port 111 may be arranged so as to be communicative with the internal space of the transfer chamber 20 through the valve 40.
- the second transport port 112 may be arranged so as to be communicable with the internal space of the loader chamber 30 through the valve 50.
- the load lock device 100 may include a gas introduction unit 160 that introduces a gas (for example, clean dry air or nitrogen gas) into the load lock chamber 110.
- the gas introduction unit 160 may be arranged above the path between the substrate holding structure 120 and the transfer chamber 20 in a state where the substrate S is conveyed to the transfer chamber 20 through the first transfer port 111, for example.
- the gas introduction unit 160 may be located above the first transport port 111.
- the gas introduction unit 160 may include a gas dispersion unit 162 that disperses the gas in the internal space of the load lock chamber 110. At least a part of the gas dispersion part 162 may be arranged inside the load lock chamber 110.
- the gas dispersion unit 162 may be arranged at a position facing the second transport port 112.
- the gas introduction unit 160 may include a flow rate adjusting valve 164 for adjusting the introduction of gas.
- the gas dispersion portion 162 may have a pillar-shaped portion, and the inner surface of the load lock chamber 110 may include a curved surface that is separated from the pillar-shaped portion and along the pillar-shaped portion.
- the pillar-shaped portion can have a cylindrical shape, and the curved surface can form a part of the cylindrical surface.
- the load lock device 100 may include a substrate holding structure 120 that holds the substrate S in the load lock chamber 110.
- the substrate holding structure 120 can have a facing surface OS facing the substrate S, and can be configured so that gas can flow in the space between the substrate S and the facing surface OS.
- the substrate holding structure 120 includes a partial PP located inside the outer edge EE of the facing surface OS and the substrate S in a state where the substrate S is held by the substrate holding structure 120. It may have a structure in which the distance is larger than the distance between the outer edge EE of the facing surface OS and the substrate S. As shown schematically by the dotted arrow in FIG.
- the gas flow is such that the gas is introduced into the internal space of the load lock chamber 110 by the gas introduction unit 160, and / or the gas is discharged from the internal space by the pump 150 or the like as described later. By doing so, it can be formed. Therefore, in the load lock chamber 110 where the pressure changes in a wide range including from atmospheric pressure to high vacuum, a gas flow can inevitably be formed.
- the substrate holding structure 120 may include a first member 125 having a facing surface OS and a second member 126 having an upper surface US facing the lower surface LS of the first member 125.
- the substrate holding structure 120 may include a plurality of contact portions 124 that come into contact with the substrate S so as to support the substrate S.
- the second member 126 may support the first member 125 and a plurality of contact portions 124.
- the upper surface US of the second member 126 may have a shape along the lower surface LS of the first member 125. Such a structure allows for a smooth flow of gas.
- a structure in which the space defined by the first member 125 (lower surface LS) and the second member 126 (upper surface US) facing each other does not exist as a gas flow path, that is, the space is filled with a solid. In the structure, the flow of gas is obstructed and a standing vortex is generated.
- a structure in which the first member 125 (lower surface LS) and the second member 126 (upper surface US) face each other is advantageous for suppressing the generation of a standing vortex.
- the load lock device 100 may include a drive mechanism 130.
- the drive mechanism 130 may be arranged below the load lock chamber 110 so as to raise and lower the substrate holding structure 120.
- the drive mechanism 130 can be connected to the substrate holding structure 120 via the connecting member 122.
- the load lock chamber 110 includes an extension chamber 140 extending laterally from the lower part of the load lock chamber 110, and a pump 150 arranged below the extension chamber 140 and discharging gas from the load lock chamber 110 via the extension chamber 140.
- the extension chamber 140 may have a bottom surface 144 having an opening 142 at a position offset from vertically below the substrate holding structure 120.
- the pump 150 may be connected to the opening 142.
- a valve may be placed between the pump 150 and the opening 142.
- the pump 150 may include, for example, a rotary pump and a turbo molecular pump located between the rotary pump and the opening 142.
- the turbine of a turbo molecular pump rotates at high speed during operation. When particles sucked by a turbo molecular pump collide with a turbine, they can be ejected from the turbine. Also, regardless of whether the pump 150 is a turbo molecular pump, the pump 150 itself can generate particles. Therefore, it is preferable to connect the pump 150 to the opening 142 provided in the bottom surface 144 of the extension chamber 140 extending laterally from the lower part of the load lock chamber 110. As a result, it is possible to reduce the particles from the pump 150 reaching the space above the substrate S through the gap G between the side surface of the substrate holding structure 120 and the inner surface of the load lock chamber and adhering to the substrate S.
- a gas discharge line 52 can be connected to the valve 50 arranged between the second transport port 112 of the load lock chamber 110 and the loader chamber 30. Gas in the space near the second transport port 112 can be discharged to the external space of the load lock chamber 110 through the gas discharge line 52.
- a pump (not shown) may be connected to the gas discharge line 52.
- At least a part of the second transport port 112 may be arranged above the extension chamber 140 (vertically above). Alternatively, at least a portion of the extension chamber 140 may be located between the second transport port 112 and the pump 150. Such a configuration is advantageous for reducing the footprint of the load lock device 100.
- At least a part of the loader chamber 30 can be arranged above the extension chamber 140 (vertically above). Alternatively, at least a portion of the extension chamber 140 may be located between the loader chamber 30 and the pump 150. Such a configuration is also advantageous for reducing the footprint of the load lock device 100.
- FIG. 15 is a plan view showing the arrangement of the load lock chamber 110, the extension chamber 140, and the gas dispersion portion 162.
- This plan view can also be understood as a normal projection onto the floor on which the load lock device 100 is located.
- the substrate holder 120 may be located between the gas dispersion portion 162 and the extension chamber 140 in the plan view or the normal projection.
- the opening 142 may be located between the gas dispersion portion 162 and the extension chamber 140 in the plan view or the normal projection.
- the area of the gap G between the side surface of the substrate holding structure 120 and the inner surface surface of the load lock chamber 110 is preferably smaller than the cross-sectional area of the second transport port 112. It is more preferable that the area of the gap G is smaller than 1/2, 1/3 or 1/4 of the cross-sectional area of the second transport port 112.
- the gas introduced from the gas dispersion unit 162 into the internal space of the load lock chamber 110 when the substrate S is conveyed from the loader chamber 30 to the internal space of the load lock chamber 110 through the second transport port 112, the gas introduced from the gas dispersion unit 162 into the internal space of the load lock chamber 110.
- the amount discharged through the second transport port 112 and the gas discharge line 52 is larger than the amount discharged from the space above the substrate S to the space below the substrate holding structure 120 through the gap G. This is effective for suppressing particles from entering the internal space of the load lock chamber 110 from the loader chamber 30 through the second transport port 112.
- the area of the gap G between the side surface of the substrate holding structure 120 and the inner surface surface of the load lock chamber 110 is preferably smaller than the cross-sectional area of the opening 142 provided on the bottom surface 144 of the extension chamber 140. Such a configuration is advantageous for reducing the particles from the pump 150 reaching the space above the substrate S through the gap G and adhering to the substrate S.
- the area of the gap G is preferably smaller than the cross-sectional area (cross-sectional area in the vertical plane) of the connecting portion 146 between the load lock chamber 110 and the extension chamber 140. Such a configuration is also advantageous for reducing the particles from the pump 150 reaching the space above the substrate S through the gap G and adhering to the substrate S.
- FIG. 3, FIG. 4 and FIG. 5 schematically show the operation of the processing apparatus shown in FIG.
- the gas in the internal space can be discharged to the external space of the load lock chamber 110 by the pump 150 while the gas is introduced (supplied) from the gas introduction unit 160 into the internal space of the load lock chamber 110.
- the amount of gas introduced from the gas introduction unit 160 into the internal space can be made larger than the amount of gas discharged by the pump 150 so that the pressure in the internal space rises.
- the valve 50 can be opened and gas discharge by the gas discharge line 52 can be started.
- the transfer robot 34 can transfer the substrate S from the loader chamber 30 to the substrate holding structure 120 in the internal space of the load lock chamber 110.
- the valve 50 is closed and the substrate holding structure 120 can be driven upward by the drive mechanism 130. Further, in a state where the gas is introduced from the gas introduction unit 160 into the internal space of the load lock chamber 110, the amount of gas discharged from the internal space by the pump 150 is increased, and the internal space is depressurized. After that, the introduction of gas into the internal space by the gas introduction unit 160 is stopped, and the amount of gas discharged from the internal space by the pump 150 can be further increased.
- the substrate holding structure 120 is driven downward by the drive mechanism 130 to a height for transporting the substrate S to the transfer chamber 20, as shown in FIG. Can be done.
- the valve 40 is opened, and the transfer robot 22 can transfer the substrate S from the internal space of the load lock chamber 110 to the transfer chamber 20 and further to the decompression processing device 10.
- the valve 40 is closed and the substrate S is processed in the decompression processing device 10.
- valve 40 is opened, and as shown in FIG. 5, the substrate S of the decompression processing device 10 can be conveyed to the internal space of the load lock chamber 110 by the transfer robot 22. After that, the valve 40 can be closed.
- the gas in the internal space can be discharged to the external space of the load lock chamber 110 by the pump 150 while the gas is introduced from the gas introduction unit 160 into the internal space of the load lock chamber 110.
- the amount of gas introduced from the gas introduction unit 160 into the internal space can be made larger than the amount of gas discharged by the pump 150 so that the pressure in the internal space rises.
- the valve 50 can be opened and gas discharge by the gas discharge line 52 can be started.
- the transfer robot 34 can transfer the substrate S from the substrate holding structure 120 in the internal space of the load lock chamber 110 to the loader chamber 30.
- the valve 50 can be closed and the gas discharge by the gas discharge line 52 can be stopped.
- the substrate holding structure 120 holds the substrate S so that at least a part of the side surface (outer peripheral surface) of the substrate S faces the inner surface of the load lock chamber 110. sell.
- at least a part of the side surface (outer peripheral surface) of the substrate S held by the substrate holding structure 120 faces the inner surface of the load lock chamber 110 in a direction parallel to the surface of the substrate S. Can be retained.
- the substrate holding structure 120 can be arranged at a plurality of positions in the internal space of the load lock chamber 110. As illustrated in FIG. 1, the plurality of positions may include a position where a part of the side surface of the substrate S held by the substrate holding structure 120 faces the gas dispersion portion 162. Here, the part of the side surface (outer peripheral surface) of the substrate S held by the substrate holding structure 120 may face the gas dispersion portion 162 in a direction parallel to the surface of the substrate S.
- the dimension DH of the facing surface OS of the substrate holding structure 120 in the surface direction along the surface of the substrate S is based on the dimension DS of the substrate S in the surface direction.
- the substrate holding structure 120 may be configured to be small.
- the partial PP of the substrate holding mechanism 120 may be located inside the outer edge EE of the facing surface OS with respect to a predetermined direction (Y direction) in the horizontal plane (XY plane).
- the cross sections of the facing planes OS cut in each of the plurality of planes (plurality of planes parallel to the YZ plane) perpendicular to the horizontal plane (XY plane) and parallel to the predetermined direction (Y direction) have the same shape.
- the substrate S held by the substrate holding structure 120 may have a rectangular shape.
- the substrate S held by the substrate holding structure 120 may have a circular shape with a notch NT indicating a reference orientation.
- the substrate S held by the substrate holding structure 120 may have another shape.
- FIG. 6 schematically shows the configuration of a processing device including the load lock device 100 of the second embodiment of the present invention. Matters not mentioned as the second embodiment may follow the first embodiment.
- the ceiling portion of the load lock chamber 110 includes a portion 601 facing the inner region of the outer edge of the substrate S and a portion 602 facing the outer edge of the substrate S. The distance to the substrate S is larger than the distance between the portion 602 and the substrate S.
- FIG. 7 schematically shows the configuration of a processing device including the load lock device 100 according to the third embodiment of the present invention. Matters not mentioned as the third embodiment may follow the first embodiment.
- the ceiling portion of the load lock chamber 110 includes a portion 601 facing the inner region of the outer edge of the substrate S and a portion 602 facing the outer edge of the substrate S. The distance to the substrate S is larger than the distance between the portion 602 and the substrate S.
- the portion 601 is composed of a smooth curved surface.
- FIG. 8 schematically shows the configuration of a processing device including the load lock device 100 according to the fourth embodiment of the present invention. Matters not mentioned as the fourth embodiment may follow the first embodiment.
- the first member 125 has a corrugated blade shape.
- the corrugated blade shape is advantageous for suppressing large vortices such as over the space between the facing surface OS and the substrate S, for example.
- FIG. 9 schematically shows a plan view of the first member 125 in the load lock device 100 according to the fifth embodiment of the present invention.
- FIG. 10 schematically shows a side view of the first member 125 in the load lock device 100 according to the fifth embodiment of the present invention. Matters not mentioned as the fifth embodiment may follow the first embodiment.
- the partial PP located inside the outer edge EE of the facing surface OS is inside the outer edge EE of the facing surface OS with respect to the predetermined direction DIR.
- the first member 125 is divided into a plurality of portions 125a, 125b with respect to a direction orthogonal to a predetermined direction DIR.
- 100 Load lock device, 110: Load lock chamber, 111: First transport port, 112: Second transport port, 120: Substrate holding structure, 140: Extension chamber, 142: Opening, 144: Bottom surface, 150: Pump, 160 : Gas introduction part, 162: Gas dispersion part, PP: Part, EE: Outer edge, OS: Facing surface
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Abstract
Description
Claims (19)
- ロードロック室と、前記ロードロック室の中で基板を保持する基板保持構造とを備えるロードロック装置であって、
前記基板保持構造は、前記基板に対向する対向面を有し、前記基板と前記対向面との間の空間をガスが流れることができるように構成され、
前記基板保持構造によって前記基板が保持された状態において、前記対向面の外縁よりも内側に位置する部分と前記基板との距離は、前記対向面の前記外縁と前記基板との距離より大きい、
ことを特徴とするロードロック装置。 - 前記基板保持構造は、前記対向面を有する第1部材と、前記第1部材の下面に対向する上面を有する第2部材とを含む、
ことを特徴とする請求項1に記載のロードロック装置。 - 前記基板保持構造は、前記基板を支持するように前記基板と接触する複数の接触部を更に含み、前記第2部材は、前記第1部材および前記複数の接触部を支持する、
ことを特徴とする請求項2に記載のロードロック装置。 - 前記第2部材の前記上面は、前記第1部材の前記下面に沿った形状を有する、
ことを特徴とする請求項3に記載のロードロック装置。 - 前記第1部材は、コルゲート翼形状を有する、
ことを特徴とする請求項3に記載のロードロック装置。 - 前記部分は、所定方向に関して前記対向面の前記外縁よりも内側に位置し、
前記第1部材は、前記所定方向に直交する方向に関して複数の部分に分割されている、
ことを特徴とする請求項3に記載のロードロック装置。 - 前記ロードロック室は、減圧処理装置に接続されるトランスファー室と接続する第1搬送口と、ローダー室と接続する第2搬送口とを有し、
前記ロードロック装置は、
前記第1搬送口を通して前記基板が前記トランスファー室に搬送される状態における前記基板保持構造と前記トランスファー室との間の経路の上方に配置されたガス導入部と、
前記基板保持構造の下方の空間を通してガスを排出するように配置されたガス排出部と、を更に備える、
ことを特徴とする請求項1乃至6のいずれか1項に記載のロードロック装置。 - 前記第1搬送口の高さは、前記第2搬送口の高さより低い、
ことを特徴とする請求項7に記載のロードロック装置。 - 前記ガス導入部は、ガスを分散させるガス分散部を含み、
前記ガス分散部は、前記第2搬送口に対向する位置に配置されている、
ことを特徴とする請求項7又は8に記載のロードロック装置。 - 前記ガス分散部は、柱形状部を有し、前記ロードロック室の内側面は、前記柱形状部から離隔し、かつ前記柱形状部に沿った湾曲面を含む、
ことを特徴とする請求項9に記載のロードロック装置。 - 前記柱形状部は、円柱形状を有し、前記湾曲面は、円筒面の一部を構成する、
ことを特徴とする請求項10に記載のロードロック装置。 - 前記基板保持構造によって保持された前記基板が前記ガス分散部の中心軸より高い位置に配置された状態で前記ロードロック室の圧力を低下させる動作、および、前記基板保持構造によって保持された前記基板が前記ガス分散部の中心軸より低い位置に配置された状態で前記ロードロック室の圧力を低下させる動作を実行するように前記ガス導入部および前記ガス排出部が制御される、
ことを特徴とする請求項9乃至11のいずれか1項に記載のロードロック装置。 - 前記第2搬送口の付近の空間からガスを排出するように配置されたガス排出ラインを更に備える、
ことを特徴とする請求項7乃至12のいずれか1項に記載のロードロック装置。 - 前記基板保持構造は、前記基板の側面の少なくとも一部が前記ロードロック室の内面に対向するように前記基板を保持する、
ことを特徴とする請求項1乃至13のいずれか1項に記載のロードロック装置。 - 前記ロードロック室の内部空間にガスを分散させるガス分散部を更に備え、
前記基板保持構造は、前記基板の側面の少なくとも一部が前記ロードロック室の内面に対向するように前記基板を保持し、
前記基板保持構造が配置されうる位置は、前記基板保持構造によって保持された前記基板の側面の一部が前記ガス分散部に対向する位置を含む、
ことを特徴とする請求項1乃至8及び13のいずれか1項に記載のロードロック装置。 - 前記基板の表面に沿った表面方向における前記対向面の寸法は、前記表面方向における前記基板の寸法より小さい、
ことを特徴とする請求項1乃至15のいずれか1項に記載のロードロック装置。 - 前記部分は、水平面内の所定方向に関して前記対向面の前記外縁よりも内側に位置し、
前記水平面に垂直で前記所定方向に平行な複数の平面のそれぞれで切断された前記対向面の断面が互いに同一形状を有する、
ことを特徴とする請求項1乃至16のいずれか1項に記載のロードロック装置。 - 前記基板保持構造によって保持される前記基板は、矩形形状を有する、
ことを特徴とする請求項1乃至17のいずれか1項に記載のロードロック装置。 - 前記基板保持構造によって保持される前記基板は、基準方位を示す切り欠き部を有する円形形状を有する、
ことを特徴とする請求項1乃至17のいずれか1項に記載のロードロック装置。
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KR1020227003149A KR20220025880A (ko) | 2019-09-06 | 2020-09-02 | 로드 로크 장치 |
EP20861168.1A EP4027371A4 (en) | 2019-09-06 | 2020-09-02 | LOAD SECURING DEVICE |
CN202080051124.6A CN114175225A (zh) | 2019-09-06 | 2020-09-02 | 负载锁定装置 |
US17/575,690 US20220139761A1 (en) | 2019-09-06 | 2022-01-14 | Load lock device |
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JP2021082834A (ja) | 2021-05-27 |
TWI776224B (zh) | 2022-09-01 |
WO2021044623A1 (ja) | 2021-03-11 |
CN114175225A (zh) | 2022-03-11 |
JP6842804B1 (ja) | 2021-03-17 |
JP7473493B2 (ja) | 2024-04-23 |
KR20220025880A (ko) | 2022-03-03 |
TW202117899A (zh) | 2021-05-01 |
TWI819723B (zh) | 2023-10-21 |
JP6818930B1 (ja) | 2021-01-27 |
US20220139761A1 (en) | 2022-05-05 |
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