CN114171442A - 一种集成光电子器件制造用蚀刻装置 - Google Patents
一种集成光电子器件制造用蚀刻装置 Download PDFInfo
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- CN114171442A CN114171442A CN202210132883.6A CN202210132883A CN114171442A CN 114171442 A CN114171442 A CN 114171442A CN 202210132883 A CN202210132883 A CN 202210132883A CN 114171442 A CN114171442 A CN 114171442A
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- etching
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- integrated optoelectronic
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- 238000005530 etching Methods 0.000 title claims abstract description 138
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 230000005693 optoelectronics Effects 0.000 claims abstract description 55
- 230000007246 mechanism Effects 0.000 claims abstract description 31
- 230000000694 effects Effects 0.000 claims abstract description 26
- 238000012937 correction Methods 0.000 claims abstract description 23
- 238000001125 extrusion Methods 0.000 claims description 30
- 238000009434 installation Methods 0.000 claims description 28
- 239000007788 liquid Substances 0.000 claims description 22
- 238000001179 sorption measurement Methods 0.000 claims description 12
- 230000004044 response Effects 0.000 claims description 11
- 238000005119 centrifugation Methods 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims 1
- 230000006698 induction Effects 0.000 abstract description 12
- 238000000034 method Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 239000003973 paint Substances 0.000 description 6
- 230000009471 action Effects 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000007630 basic procedure Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210132883.6A CN114171442B (zh) | 2022-02-14 | 2022-02-14 | 一种集成光电子器件制造用蚀刻装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210132883.6A CN114171442B (zh) | 2022-02-14 | 2022-02-14 | 一种集成光电子器件制造用蚀刻装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN114171442A true CN114171442A (zh) | 2022-03-11 |
CN114171442B CN114171442B (zh) | 2022-05-31 |
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CN202210132883.6A Active CN114171442B (zh) | 2022-02-14 | 2022-02-14 | 一种集成光电子器件制造用蚀刻装置 |
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CN (1) | CN114171442B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115116928A (zh) * | 2022-08-29 | 2022-09-27 | 山东芯恒光科技有限公司 | 一种半导体加工用固定装置 |
CN115148644A (zh) * | 2022-09-06 | 2022-10-04 | 山东圆坤电子科技有限公司 | 一种集成光电子器件制造用蚀刻装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN208816511U (zh) * | 2018-06-15 | 2019-05-03 | 南京浦阳环保科技有限公司 | 一种蚀刻机用传动轴 |
CN209882249U (zh) * | 2019-01-24 | 2019-12-31 | 上海巨传电子有限公司 | 一种pcb线路板刻蚀机用限位机构 |
CN113318903A (zh) * | 2021-05-21 | 2021-08-31 | 东莞市希琉智能科技有限公司 | 一种木质家具用的均匀上漆辅助装置 |
CN113715939A (zh) * | 2021-07-23 | 2021-11-30 | 夏林冬 | 一种自行车用智能控制摩擦蓄电装置 |
-
2022
- 2022-02-14 CN CN202210132883.6A patent/CN114171442B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN208816511U (zh) * | 2018-06-15 | 2019-05-03 | 南京浦阳环保科技有限公司 | 一种蚀刻机用传动轴 |
CN209882249U (zh) * | 2019-01-24 | 2019-12-31 | 上海巨传电子有限公司 | 一种pcb线路板刻蚀机用限位机构 |
CN113318903A (zh) * | 2021-05-21 | 2021-08-31 | 东莞市希琉智能科技有限公司 | 一种木质家具用的均匀上漆辅助装置 |
CN113715939A (zh) * | 2021-07-23 | 2021-11-30 | 夏林冬 | 一种自行车用智能控制摩擦蓄电装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115116928A (zh) * | 2022-08-29 | 2022-09-27 | 山东芯恒光科技有限公司 | 一种半导体加工用固定装置 |
CN115116928B (zh) * | 2022-08-29 | 2022-11-15 | 山东芯恒光科技有限公司 | 一种半导体加工用固定装置 |
CN115148644A (zh) * | 2022-09-06 | 2022-10-04 | 山东圆坤电子科技有限公司 | 一种集成光电子器件制造用蚀刻装置 |
CN115148644B (zh) * | 2022-09-06 | 2022-11-22 | 山东圆坤电子科技有限公司 | 一种集成光电子器件制造用蚀刻装置 |
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CN114171442B (zh) | 2022-05-31 |
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Effective date of registration: 20230523 Address after: Room c506a-18, University Pioneer Park, 99 University Road, Xuzhou hi tech Industrial Development Zone, Jiangsu Province, 221000 Patentee after: Xuzhou rongchuangda Electronic Technology Co.,Ltd. Address before: 221000 floor 3, building C4, group 1, Zone C, Guishan Minbo Cultural Park, No. 39, Pingshan North Road, Gulou District, Xuzhou City, Jiangsu Province Patentee before: Jiangsu Jianxin Network Technology Co.,Ltd. Effective date of registration: 20230523 Address after: 541000, 4th floor, Building C, Information Incubation Building, D-12, High tech Zone Information Industry Park, Qixing District, Guilin City, Guangxi Zhuang Autonomous Region Patentee after: GUILIN TRYIN TECHNOLOGY Co.,Ltd. Address before: Room c506a-18, University Pioneer Park, 99 University Road, Xuzhou hi tech Industrial Development Zone, Jiangsu Province, 221000 Patentee before: Xuzhou rongchuangda Electronic Technology Co.,Ltd. |
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Address after: Room 303G1, Building 13, Creative Industry Park, No. 70 Qilidian Road, Qixing District, Guilin, Guangxi, 541000 Patentee after: GUILIN TRYIN TECHNOLOGY Co.,Ltd. Address before: 541000, 4th floor, Building C, Information Incubation Building, D-12, High tech Zone Information Industry Park, Qixing District, Guilin City, Guangxi Zhuang Autonomous Region Patentee before: GUILIN TRYIN TECHNOLOGY Co.,Ltd. |
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