CN113892184B - 半导体装置和半导体装置的制造方法 - Google Patents

半导体装置和半导体装置的制造方法 Download PDF

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CN113892184B
CN113892184B CN202080038918.9A CN202080038918A CN113892184B CN 113892184 B CN113892184 B CN 113892184B CN 202080038918 A CN202080038918 A CN 202080038918A CN 113892184 B CN113892184 B CN 113892184B
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hydrogen
semiconductor substrate
oxygen
semiconductor device
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CN113892184A (zh
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吉田浩介
吉村尚
泷下博
内田美佐稀
根本道生
菅沼奈央
洼内源宜
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Fuji Electric Co Ltd
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    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
CN202080038918.9A 2019-12-18 2020-12-10 半导体装置和半导体装置的制造方法 Active CN113892184B (zh)

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JP2019228409 2019-12-18
JP2019-228409 2019-12-18
JP2020087349 2020-05-19
JP2020-087349 2020-05-19
JP2020-189026 2020-11-12
JP2020189026 2020-11-12
PCT/JP2020/046167 WO2021125064A1 (ja) 2019-12-18 2020-12-10 半導体装置および半導体装置の製造方法

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CN113892185B (zh) * 2019-12-18 2025-04-22 富士电机株式会社 半导体装置及半导体装置的制造方法
JP7361634B2 (ja) * 2020-03-02 2023-10-16 三菱電機株式会社 半導体装置及び半導体装置の製造方法
JP7848459B2 (ja) 2021-10-15 2026-04-21 富士電機株式会社 解析方法、プログラムおよび半導体装置の製造方法
JP7652341B2 (ja) * 2022-05-30 2025-03-27 富士電機株式会社 半導体装置の製造方法
JP7672366B2 (ja) * 2022-06-27 2025-05-07 三菱電機株式会社 半導体装置
JP2024014333A (ja) * 2022-07-22 2024-02-01 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7831641B2 (ja) * 2022-12-13 2026-03-17 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2024107868A (ja) * 2023-01-30 2024-08-09 株式会社デンソー 半導体装置
JPWO2025028573A1 (https=) * 2023-08-01 2025-02-06
WO2025084305A1 (ja) * 2023-10-17 2025-04-24 富士電機株式会社 半導体基板の評価方法および半導体装置の製造方法

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