CN113871508A - 一种碲半导体薄膜红外探测器件 - Google Patents
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- 229910052714 tellurium Inorganic materials 0.000 title claims abstract description 35
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 238000001514 detection method Methods 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000010409 thin film Substances 0.000 claims abstract description 35
- 239000010408 film Substances 0.000 claims abstract description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 14
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- 239000011787 zinc oxide Substances 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 238000002207 thermal evaporation Methods 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
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- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- 150000004706 metal oxides Chemical class 0.000 description 1
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Abstract
本发明公开了一种碲半导体薄膜红外探测器件，属于红外探测技术领域，能够解决当前Te短波红外探测器难以兼顾暗电流、响应度以及CMOS兼容性的技术难题。所述碲半导体薄膜红外探测器件包括：第一电极，第一电极为透明电极；电子传输层，设置在第一电极上；碲薄膜层，设置在电子传输层上；第二电极，设置在碲薄膜层上。本发明用于制作红外探测器件。
Description
技术领域
本发明涉及一种碲半导体薄膜红外探测器件，属于红外探测技术领域。
背景技术
碲(Te)是一种新型短波红外探测材料，具备原料成本低、无毒抑菌剂光电性质优异的优势，具备实现高性能红外探测的巨大潜力。20世纪50年代就有研究者开始关注Te的红外探测应用，但大多为Te单晶红外探测器件，不利于CMOS集成和实际成像的应用。
Te薄膜器件与CMOS具有更好的兼容性，但Te薄膜红外光电探测器研究刚刚起步。目前关于Te薄膜的红外探测应用仅限于Te薄膜的短波红外场效应晶体管。但是场效应晶体管型红外探测器与CMOS集成工艺复杂、动态响应范围较窄、弱光性能差，并不适合制备高性能红外探测芯片。
发明内容
本发明提供了一种碲半导体薄膜红外探测器件，能够解决当前Te短波红外探测器难以兼顾暗电流、响应度以及CMOS兼容性的技术难题。
本发明提供了一种碲半导体薄膜红外探测器件，包括：第一电极，所述第一电极为透明电极；电子传输层，设置在所述第一电极上；碲薄膜层，设置在所述电子传输层上；第二电极，设置在所述碲薄膜层上。
可选的，所述第一电极为ITO薄膜。
可选的，所述ITO薄膜的厚度为200～300nm。
可选的，所述电子传输层为氧化锌层。
可选的，所述氧化锌层的厚度为100～300nm。
可选的，所述氧化锌层采用射频磁控溅射工艺制备，溅射功率为100～200W，溅射时间为30～60mins，溅射的氛围为O2∶Ar＝1∶99。
可选的，所述碲薄膜层的厚度为10nm～3μm。
可选的，所述碲薄膜层采用热蒸发工艺制备，热蒸发工艺中蒸发温度为400～500℃，蒸发速率为1～2nm/s，蒸发的总时长为10～30mins，蒸发腔室的真空度小于10-4pa。
可选的，所述第二电极为金电极。
可选的，所述金电极的厚度为10～100nm。
可选的，所述金电极采用热蒸发工艺制备。
可选的，还包括：玻璃基底，所述ITO薄膜设置在所述玻璃基底上。
可选的，所述玻璃基底的厚度为1mm～2mm。
本发明能产生的有益效果包括：
本发明提供的碲半导体薄膜红外探测器件，通过设计光电二极管型的Te红外探测器，实现探测器件较低的暗电流和较高的相应度，并且器件制备工艺与CMOS兼容性更好，吸光更强，弱光性能较好，能够实现低成本、高灵敏、高分辨的新型短波红外探测器。
附图说明
图1为本发明实施例提供的碲半导体薄膜红外探测器件结构示意图；
图2为本发明实施例提供的碲半导体薄膜红外探测器件能带结构图。
部件和附图标记列表：
11、ITO电极；12、ZnO层；13、Te薄膜层；14、Au电极。
具体实施方式
下面结合实施例详述本发明，但本发明并不局限于这些实施例。
尽管Te单晶和器件已经实现了较好的探测性能，但不能CMOS集成；微纳器件也已经实现了较高的器件性能，但暗电流较大，噪声较大，比探测率较小，成像信噪比差，难以实现规模化生产和面阵成像应用；薄膜场效应管器件暗电流较小，但薄膜较薄，吸光不足，因此灵敏度较差，且工艺与CMOS兼容性差，因此本发明立足于器件结构设计，解决Te短波红外探测器兼顾暗电流、响应度和CMOS兼容性的关键性问题。
具体的，本发明实施例提供了一种碲半导体薄膜红外探测器件，包括：第一电极，第一电极为透明电极；电子传输层，设置在第一电极上；碲薄膜层，设置在电子传输层上；第二电极，设置在碲薄膜层上。
其中，第一电极为ITO薄膜，即图1中的ITO电极11；优选的，ITO薄膜的厚度为200～300nm；试验中ITO电极11采用商业购买的ITO薄膜。
参考图1所示，电子传输层为氧化锌层；ZnO层12的厚度为100～300nm。在实际应用中，ZnO层12可以采用射频磁控溅射工艺制备，溅射功率为100～200W，溅射时间为30～60mins，溅射的氛围为O2∶Ar＝1∶99。
Te薄膜层13的厚度为10nm～3μm。较佳的，Te薄膜层13采用热蒸发工艺制备，热蒸发工艺中蒸发温度为400～500℃，蒸发速率为1～2nm/s，蒸发的总时长为10～30mins，蒸发腔室的真空度小于10-4pa。
第二电极为金电极；Au电极14的厚度为10～100nm；优选的，Au电极14采用热蒸发工艺制备。
在本发明实施例中，该碲半导体薄膜红外探测器件还可以包括：玻璃基底，ITO薄膜设置在玻璃基底上；优选的，玻璃基底的厚度为1mm～2mm。
如图1所示，当器件结构为ITO/ZnO/Te/Au时，Te光电二极管型短波红外探测器具有较高的相应度，较低的暗电流，制备工艺与CMOS兼容性较好，且制备出的器件较为平整致密，漏电流较小，综合性能较好，能够实现低成本、高灵敏度、高分辨的新型短波红外面阵探测器。
图2为本申请保护的器件能带结构图，能带图反映了探测器件载流子(电子和空穴)在器件中传输的路径和输运难易。从图2可以看出，器件工作时，Te薄膜层吸收红外光子，产生电子空穴对，在外加电场(施加在ITO电极和Au电极上)的作用下分离可以分别向两端电极移动产生探测电流信号。进一步的，根据半导体原理相关知识，电子在导带传输，空穴在价带传输，最终电子传输到ITO电极，空穴传输到Au电极，产生探测电流信号。
以上所述，仅是本申请的几个实施例，并非对本申请做任何形式的限制，虽然本申请以较佳实施例揭示如上，然而并非用以限制本申请，任何熟悉本专业的技术人员，在不脱离本申请技术方案的范围内，利用上述揭示的技术内容做出些许的变动或修饰均等同于等效实施案例，均属于技术方案范围内。
Claims (10)
1.一种碲半导体薄膜红外探测器件，其特征在于，包括：
第一电极，所述第一电极为透明电极；
电子传输层，设置在所述第一电极上；
碲薄膜层，设置在所述电子传输层上；
第二电极，设置在所述碲薄膜层上。
2.根据权利要求1所述的碲半导体薄膜红外探测器件，其特征在于，所述第一电极为ITO薄膜；
优选的，所述ITO薄膜的厚度为200～300nm。
3.根据权利要求1所述的碲半导体薄膜红外探测器件，其特征在于，所述电子传输层为氧化锌层。
4.根据权利要求3所述的碲半导体薄膜红外探测器件，其特征在于，所述氧化锌层的厚度为100～300nm。
5.根据权利要求3或4所述的碲半导体薄膜红外探测器件，其特征在于，所述氧化锌层采用射频磁控溅射工艺制备，溅射功率为100～200W，溅射时间为30～60mins，溅射的氛围为O2:Ar＝1:99。
6.根据权利要求1所述的碲半导体薄膜红外探测器件，其特征在于，所述碲薄膜层的厚度为10nm～3μm。
7.根据权利要求6所述的碲半导体薄膜红外探测器件，其特征在于，所述碲薄膜层采用热蒸发工艺制备，热蒸发工艺中蒸发温度为400～500℃，蒸发速率为1～2nm/s，蒸发的总时长为10～30mins，蒸发腔室的真空度小于10-4pa。
8.根据权利要求1所述的碲半导体薄膜红外探测器件，其特征在于，所述第二电极为金电极。
9.根据权利要求8所述的碲半导体薄膜红外探测器件，其特征在于，所述金电极的厚度为10～100nm；
优选的，所述金电极采用热蒸发工艺制备。
10.根据权利要求2所述的碲半导体薄膜红外探测器件，其特征在于，
还包括：玻璃基底，所述ITO薄膜设置在所述玻璃基底上；
优选的，所述玻璃基底的厚度为1mm～2mm。
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