CN116914000B - 一种顶层掺杂的平面光导型非倒装键合量子点成像芯片 - Google Patents
一种顶层掺杂的平面光导型非倒装键合量子点成像芯片 Download PDFInfo
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Abstract
一种顶层掺杂的平面光导型非倒装键合量子点成像芯片。属于光电传感器技术领域，具体涉及胶体量子点探测器成像技术领域。其解决了光导型胶体量子点红外探测器暗电流较大、噪声大且信号灵敏度较低的问题。所述成像芯片包括基底、电极、本征量子点层和空穴掺杂量子点层；所述基底置于最底层，所述本征量子点层附着于基底之上，所述空穴掺杂量子点层附着于本征量子点层之上，所述电极设置在基底之中，位置为基底与本征量子点层交界处。所述芯片及其制备方法可以应用在光电探测技术领域。
Description
技术领域
本发明属于光电传感器技术领域，具体涉及胶体量子点探测器成像技术领域。
背景技术
光电探测器主要用于将光信号转化为电信号，进而实现对红外线的定量测量、分析及成像。按照波长，可将光可分为可见光（0.4-0.8微米）、近红外（0.7-1.1微米）、短波红外（1.1-2.5微米）、中波红外（3-5微米）及长波红外（8-12微米）。
胶体量子点是一种新型的红外半导体材料，具有成本低、波段调控范围宽、制备方法简单等优势。常规胶体量子点红外探测器通常采用光导型或者光伏型器件结构，目前胶体量子点焦平面阵列领域常用器件结构为光导型器件结构，其优点在于结构简单、制备成本低，其缺点在于，由于没有光伏型器件中的耗尽层及内建电场，光导型器件暗电流较大、噪声大且信号灵敏度较低。
发明内容
本发明为了解决光导型胶体量子点红外探测器暗电流较大、噪声大且信号灵敏度较低的问题，提出了一种顶层掺杂的平面光导型非倒装键合量子点成像芯片及其制备方法。
方案一、一种顶层掺杂的平面光导非倒装键合量子点成像芯片，包括基底、电极和本征量子点层，所述芯片还包括空穴掺杂量子点层；
所述基底置于最底层，所述本征量子点层附着于基底之上，所述空穴掺杂量子点层附着于本征量子点层之上，所述电极设置在基底之中，位置为基底与本征量子点层交界处。
进一步，所述本征量子点层选用的材料吸收波段覆盖0.7-12微米范围，采用电子参杂，掺杂浓度小于0.001个电子/量子点，厚度在400-1000纳米之间。
进一步，所述空穴掺杂量子点层选用的材料与本征量子点层一致，采用空穴参杂，掺杂浓度大于1空穴/量子点，厚度在50-100纳米之间。
方案二、一种如方案一所述的顶层掺杂的平面光导非倒装键合量子点成像芯片的制备方法，所述制备方法包括如下步骤：
S1、选用硅片、蓝宝石片或者具有放大电路的读出电路作为基底；
S2、选用导电材料作为电极，通过紫外光刻或者电子束\磁控溅射\热电阻蒸发镀膜的方式制备于基底之上；
S3、制备本征量子点层，所述本征量子点层的材料包括碲化汞、硫化铅、硒化铅或碲化镉，通过直接旋涂、喷涂、滴涂、刮涂或者提拉的方式覆于基底和电极之上；
S4、采用气相参杂的方法在本征量子点层的基础上制备空穴掺杂量子点层。
进一步，步骤S3中，制备本征量子点层具体为：将汞/铅/镉盐溶解于油胺/油酸溶剂中，制备成汞/铅/镉盐溶液；将碲/硫/硒单质溶解于三辛基膦中，制备成碲/硫/硒溶液；将汞/铅/镉盐溶液加热至80-150摄氏度，然后快速注入碲/硫/硒溶液，即可合成本征量子点层。
进一步，步骤S4具体为：将本征量子点层放置于密封容器之中，使用真空泵将容器内抽至真空，然后向容器内充入硫化氢或硫化铵气体，直至容器内压力达到大气压水平，加热容器使其温度达到50-100摄氏度之间，并保持1-120分钟，降温后，将密封容器取下，此时本征量子点层的上方形成空穴掺杂量子点层。
本发明所述制备方法的有益效果为：
（1）通过气相掺杂的方式，在量子点薄膜顶层引入较强的空穴掺杂，进而在光导型器件垂直方向引入了内建电场，大大提升了器件的响应灵敏度。
（2）采用量子点作为光敏感材料，解决了传统块体半导体需要经过复杂倒装键合工艺才能实现与电极电学互联的问题，可以通过简单的滴涂、旋涂、喷涂等非倒装键合方式，实现与电极的电学互联。
（3）由于空穴掺杂层的引入，芯片在本征量子点层及空穴掺杂量子点层界面处存在内建电场及耗尽层，当入射光子被吸收时，在本征量子点层内激发出电子及空穴，产生的电子及空穴在内建电场的驱动下被分离，同时，基底之上制备的电极对之间施加偏压，产生水平方向电场，在垂直及水平方向电场驱动下，光生载流子被分离并收集，产生光电信号，以此解决了光导型器件结构由于没有光伏型器件中的耗尽层及内建电场，导致的光导型器件暗电流较大、噪声大且信号灵敏度较低的问题。
本发明所述芯片及其制备方法可以应用在光电探测技术领域。
附图说明
图1为本发明实施例中顶层掺杂的平面光导非倒装键合量子点成像芯片结构图；
图2为本发明实施例中采用气相参杂的方法在本征量子点层的基础上制备空穴掺杂量子点层的流程示意图。
具体实施方式
下面将结合附图对本发明的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明的保护范围。
实施例1、
本实施例提供一种顶层掺杂的平面光导非倒装键合量子点成像芯片，其结构如图1所示，包括基底、电极、本征量子点层和空穴掺杂量子点层，所述基底置于最底层，所述本征量子点层附着于基底之上，所述空穴掺杂量子点层附着于本征量子点层之上，所述电极设置在基底之中，位置为基底与本征量子点层交界处。
基底可以是硅片、蓝宝石片或者具有放大电路的读出电路。
电极材料为金、银、铜、钛、ITO、FTO等导电材料，可以通过紫外光刻、电子束\磁控溅射\热电阻蒸发镀膜等方式制备于基底之上。
本征量子点层为碲化汞、硫化铅、硒化铅、碲化镉等材料，材料的吸收波段可以覆盖0.7-12微米范围，通过液相化学方法合成得到，掺杂浓度小于0.001个电子/量子点，接近本征材料，厚度在400-1000纳米之间。
掺杂浓度是指电子及空穴浓度，可以做高电子掺杂，也可以是高空穴掺杂，本实施例中的本征量子点层采用高电子掺杂。
空穴掺杂量子点层材料与本征量子点层材料一致，通过气相处理方法引入空穴掺杂，气相处理时采用硫化氢或硫化铵，处理温度50-100摄氏度之间，温度越高掺杂浓度越高，处理时间1-120分钟，时间越久掺杂浓度越高，空穴掺杂浓度大于1空穴/量子点，厚度在50-100纳米之间。
实施例2、
本实施例提供如实施例1所述顶层掺杂的平面光导非倒装键合量子点成像芯片的制备方法，具体如下：
S1、选用硅片、蓝宝石片或者具有放大电路的读出电路作为基底；
S2、选用导电材料作为电极，通过紫外光刻或者电子束\磁控溅射\热电阻蒸发镀膜的方式制备于基底之上；
S3、制备本征量子点层，所述本征量子点层的材料包括碲化汞、硫化铅、硒化铅或碲化镉，通过直接旋涂、喷涂、滴涂、刮涂或者提拉的方式覆于基底和电极之上；
制备本征量子点层具体为：将汞/铅/镉盐溶解于油胺/油酸溶剂中，制备成汞/铅/镉盐溶液；将碲/硫/硒单质溶解于三辛基膦中，制备成碲/硫/硒溶液；将汞/铅/镉盐溶液加热至80-150摄氏度，然后快速注入碲/硫/硒溶液，即可合成本征量子点层。根据反应温度及反应时间，可以调节量子点吸收光谱范围。
S4、采用气相参杂的方法在本征量子点层的基础上制备空穴掺杂量子点层。
如图2所示即为具体的制备流程，具体为：将本征量子点层放置于密封容器之中，使用真空泵将容器内抽至真空（0.1-0.01大气压），然后向容器内充入硫化氢或硫化铵气体，直至容器内压力达到大气压水平，加热容器使其温度达到50-100摄氏度之间，并保持1-120分钟，降温后，将密封容器取下，此时本征量子点层的上方形成空穴掺杂量子点层。
由于空穴掺杂量子点层的引入，芯片在本征层及及掺杂层界面处存在内建电场及耗尽层，当入射光子被吸收时，在本征层内激发出电子及空穴，产生的电子及空穴在内建电场的驱动下被分离，同时，基底之上制备的电极对之间施加偏压（选取1-10V范围），产生水平方向电场，在垂直及水平方向电场驱动下，光生载流子被分离并收集，产生光电信号。
Claims (4)
1.一种顶层掺杂的平面光导非倒装键合量子点成像芯片的制备方法，其特征在于，所述制备方法包括如下步骤：
S1、选用硅片、蓝宝石片或者具有放大电路的读出电路作为基底；
S2、选用导电材料作为电极，通过紫外光刻或者电子束蒸发镀膜或者磁控溅射蒸发镀膜或者热电阻蒸发镀膜的方式制备于基底之上；
S3、制备本征量子点层，所述本征量子点层的材料包括碲化汞、硫化铅、硒化铅或碲化镉，通过直接旋涂、喷涂、滴涂、刮涂或者提拉的方式覆于基底和电极之上；
S4、采用气相掺杂的方法在本征量子点层的基础上制备空穴掺杂量子点层；
步骤S4具体为：将本征量子点层放置于密封容器之中，使用真空泵将容器内抽至真空，然后向容器内充入硫化氢或硫化铵气体，直至容器内压力达到大气压水平，加热容器使其温度达到50-100摄氏度之间，并保持1-120分钟，降温后，将密封容器取下，此时本征量子点层的上方形成空穴掺杂量子点层。
2.根据权利要求1所述的顶层掺杂的平面光导非倒装键合量子点成像芯片的制备方法，其特征在于，步骤S3中，制备本征量子点层具体为：将汞/铅/镉盐溶解于油胺/油酸溶剂中，制备成汞/铅/镉盐溶液；将碲/硫/硒单质溶解于三辛基膦中，制备成碲/硫/硒溶液；将汞/铅/镉盐溶液加热至80-150摄氏度，然后快速注入碲/硫/硒溶液，即可合成本征量子点层。
3.一种根据权利要求1-2任一项所述顶层掺杂的平面光导非倒装键合量子点成像芯片的制备方法所制备的顶层掺杂的平面光导非倒装键合量子点成像芯片，所述芯片包括基底、电极和本征量子点层，其特征在于，所述芯片还包括空穴掺杂量子点层；
所述基底置于最底层，所述本征量子点层附着于基底之上，所述空穴掺杂量子点层附着于本征量子点层之上，所述电极设置在基底之中，位置为基底与本征量子点层交界处；
所述空穴掺杂量子点层选用的材料与本征量子点层一致，采用空穴掺杂，掺杂浓度大于1空穴/量子点，厚度在50-100纳米之间。
4.根据权利要求3所述的顶层掺杂的平面光导非倒装键合量子点成像芯片，其特征在于，所述本征量子点层选用的材料吸收波段覆盖0.7-12微米范围，采用电子掺杂，掺杂浓度小于0.001个电子/量子点，厚度在400-1000纳米之间。
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