CN109449243A - 基于二维二硫化钼纳米薄膜与碲化镉晶体的ii型异质结近红外光电探测器及其制备方法 - Google Patents
基于二维二硫化钼纳米薄膜与碲化镉晶体的ii型异质结近红外光电探测器及其制备方法 Download PDFInfo
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Abstract
本发明公开了基于二维二硫化钼纳米薄膜与碲化镉晶体的II型异质结近红外光电探测器及其制备方法，是在碲化镉晶体表面平铺有二维二硫化钼纳米薄膜，在二维二硫化钼纳米薄膜和碲化镉晶体上分别设置有与其呈欧姆接触的金属电极，碲化镉与二硫化钼形成II型异质结、两金属电极作为两输出级，即构筑成为异质结型近红外光电探测器。本发明的近红外光电探测器，制备工艺简单，在室温下实现了高响应度、高探测率和快响应速度，并为高性能宽波段的红外探测器的设计提供了一种途径。
Description
技术领域
本发明涉及一种由二维二硫化钼纳米薄膜与碲化镉晶体构筑的II型异质结近红外光电探测器及其制备方法，属于光电探测技术领域。
背景技术
近年来，由于其在国防和军事应用、工业自动化、环境监测和生物医学等方面的重要价值，许多研究人员致力于开发新型高性能红外光电探测器。目前，大多数商业红外光电探测器一般由某些窄带隙半导体如铟镓砷、碲镉汞等制成。但是，这些红外光电探测器的应用受到其复杂的制备工艺、高成本和低温操作条件的限制。自从发现石墨烯独特的光电特性，二维层状材料引起了人们的极大关注。与传统的块状半导体材料相比，二维材料更适合于光电探测器的制备：首先，二维材料的宽光谱响应可以为设计在不同波长下工作的光电探测器提供更大的灵活性；其次，二维材料表面上的自由悬键使得它们可以与其他半导体结合，克服晶格的限制；第三，二维材料的强光物质相互作用提供了设计小型化红外光电探测器的可能，这在传统的基于块状半导体的红外光电探测器中很难实现。鉴于上述优点，二维材料为高性能红外光电探测器的制备提供了理想的设计平台。
作为研究最多的二维材料之一，二硫化钼(MoS2)对于不同的层数具有从1.2eV到1.9eV的带隙，对应于从可见光到近红外的波长。由于这种独特性质，二硫化钼已成为开发各种电子和光电子器件的优秀候选者。然而，二维层状材料通常具有对入射光的吸收率低的缺点，这将导致较小的电流开/关比和低比探测率。为了克服二维材料的这些缺点，研究人员们已经做了很多研究，最有效的解决方案之一是与其他半导体构建异质结构，这可以增强光激发电子空穴对的生成和分离。此外，II型异质结带对准的设计可以扩展光谱响应的范围，超出半导体带隙的限制范围。因此，预计通过构建二硫化钼异质结器件可以实现高性能红外光电探测器。
发明内容
本发明是为了避免上述现有技术所存在的不足之处，提供一种工艺简单、适合大规模生产、稳定可靠、探测响应速度较快的异质结型近红外光电探测器及其制备方法，以促进二维材料在高性能红外光电探测器中的应用。
本发明为实现发明目的，采用如下技术方案：
本发明首先公开了基于二维二硫化钼纳米薄膜与碲化镉晶体的II型异质结型近红外光电探测器，其特点在于：
所述的II型异质结近红外光电探测器是在碲化镉晶体表面的部分区域平铺有二维二硫化钼纳米薄膜；在所述二维二硫化钼纳米薄膜上设置有与所述二维二硫化钼纳米薄膜呈欧姆接触的第一金属电极，在所述碲化镉晶体上设置有与所述碲化镉晶体呈欧姆接触的第二金属电极，所述第二金属电极与所述二维二硫化钼纳米薄膜间隔设置；
所述碲化镉晶体与二维二硫化钼纳米薄膜之间形成II型异质结，并以所述第一金属电极和所述第二金属电极作为两输出级，构筑成为II型异质结近红外光电探测器。
进一步地，所述碲化镉晶体的导电类型为p型、电阻率为1×103-1×107Ω·cm-1Ω·cm-1。
进一步地，所述二维二硫化钼纳米薄膜的厚度在0.65～100纳米范围内。
进一步地，所述第一金属电极与所述第二金属电极各自独立的选自是金、银、铂、铝、铜或钛。
本发明还公开了上述II型异质结近红外光电探测器的制备方法，其特点在于：首先，通过两步热分解方法制备二维二硫化钼纳米薄膜；然后将所得二维二硫化钼纳米薄膜转移到碲化镉晶体表面；最后再通过热蒸发或电子束镀膜方法在二维二硫化钼纳米薄膜上制备第一金属电极、在碲化镉晶体上制备第二金属电极，即完成II型异质结近红外光电探测器的制备。
进一步地，通过两步热分解方法制备二维二硫化钼纳米薄膜的步骤如下：
(1)依次用丙酮、乙醇和去离子水对二氧化硅衬底进行超声清洗，然后烘干；再用氩等离子体处理二氧化硅衬底5-30分钟；
(2)将0.25g的(NH4)2MoS4加入20mL二甲基甲酰胺中，并磁力搅拌1-2小时，获得前驱体溶液；
(3)通过旋涂法将前驱体溶液旋涂在衬底上，先以500转/分钟的旋涂速度旋涂10秒，再以5000转/分钟的旋涂速度旋涂30秒，然后烘干，形成(NH4)2MoS4薄膜；
(4)将(NH4)2MoS4薄膜在通入氩氢混合气体(氩氢体积比为9:1)的气氛下，以500℃的温度、1.1torr的压力，退火60分钟；然后再将(NH4)2MoS4薄膜在通入氩气和硫蒸汽混合气体的气氛下，以800℃的温度、525torr的压力，退火40分钟，即形成MoS2纳米薄膜。
进一步地，将二维二硫化钼纳米薄膜转移到碲化镉晶体上的方法为：
(1)将聚甲基丙烯酸甲酯溶在苯甲醚中，配成50mg/mL的溶液，然后在50～60℃加热，使聚甲基丙烯酸甲酯完全溶解；
(2)在生长有二维二硫化钼纳米薄膜的氧化硅片上旋涂一层聚甲基丙烯酸甲酯溶液；
(3)将涂有聚甲基丙烯酸甲酯溶液的样品放入1mol/L的KOH溶液中，1-24小时后，把剥离下来的薄膜转移至去离子水中清洗，然后再转移至碲化镉晶体上，烘干，再用丙酮、去离子水冲洗，最后晾干即可。
与已有技术相比，本发明有益效果体现在：
本发明通过一种工艺简单、成本低廉的方法制备了具有II型异质结能带排列的MoS2/CdTe异质结器件，该探测器在200-1700纳米的波长范围内都有明显的光响应，且在室温下具备了较高的比探测率、较高的响应度以及较快的探测速度。本发明这种将二维材料与传统半导体材料相结合的通用策略将促进二维材料在光电子领域的应用。
附图说明
图1为本发明基于二维二硫化钼纳米薄膜与碲化镉晶体的II型异质结近红外光电探测器的结构示意图，图中标号：1为碲化镉晶体，2为二维二硫化钼纳米薄膜，3为第一金属电极，4为第二金属电极。
图2为二硫化钼纳米薄膜的原子力显微镜图，所测得薄膜厚度为3.04纳米。
图3为基于实施例1中所制备的光电探测器在黑暗下和在不同波长光照下的电流-电压曲线。
图4为基于实施例1中所制备的光电探测器在780纳米波长，0V、-5V、-10V、-15V、-20V电压下的光响应-时间曲线。
图5为基于实施例1中所制备的光电探测器在200纳米波长下的光响应曲线。
图6为基于实施例1中所制备的光电探测器在1700纳米波长下的光响应曲线。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合实施例对本发明的具体实施方式做详细的说明。以下内容仅仅是对本发明的构思所作的举例和说明，所属本技术领域的技术人员对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代，只要不偏离发明的构思或者超越本权利要求书所定义的范围，均应属于本发明的保护范围。
实施例1
参见图1，本实施例基于二维二硫化钼纳米薄膜与碲化镉晶体的II型异质结近红外光电探测器，具有如下结构：在碲化镉晶体1表面的部分区域平铺有二维二硫化钼纳米薄膜2；在二维二硫化钼纳米薄膜2上设置有与二维二硫化钼纳米薄膜2呈欧姆接触的第一金属电极3，在碲化镉晶体1上设置有与碲化镉晶体1呈欧姆接触的第二金属电极4，第二金属电极4与二维二硫化钼纳米薄膜2间隔设置(二者不接触)；
碲化镉晶体1与二维二硫化钼纳米薄膜2之间形成异质结，并以第一金属电极3和第二金属电极4作为两输出级，构筑成为异质结型近红外光电探测器。
本实施例异质结型近红外光电探测器的制备方法，包括如下步骤：
1、通过两步热分解方法制备二维二硫化钼纳米薄膜：
(1)依次用丙酮、乙醇和去离子水对二氧化硅衬底进行超声清洗，然后烘干；再用氩等离子体处理二氧化硅衬底10分钟；
(2)将0.25g的(NH4)2MoS4加入20mL二甲基甲酰胺中，并磁力搅拌2小时，获得前驱体溶液；
(3)通过旋涂法将前驱体溶液旋涂在衬底上，先以500转/分钟的旋涂速度旋涂10秒，再以5000转/分钟的旋涂速度旋涂30秒，然后烘干，形成(NH4)2MoS4薄膜；
(4)将(NH4)2MoS4薄膜在通入氩氢混合气体(氩氢体积比为9:1)的气氛下，以500℃的温度、1.1torr的压力，退火60分钟；然后再将(NH4)2MoS4薄膜在通入氩气和硫蒸汽混合气体的气氛下，以800℃的温度、525torr的压力，退火40分钟，即形成二硫化钼纳米薄膜。图2为二硫化钼纳米薄膜的原子力显微镜图，所测得薄膜厚度为3.04纳米。
2、将二维二硫化钼纳米薄膜转移到碲化镉晶体上：
(1)将聚甲基丙烯酸甲酯溶在苯甲醚中，配成50mg/mL的溶液，然后在55℃加热，使聚甲基丙烯酸甲酯完全溶解；
(2)在生长有二维二硫化钼纳米薄膜的氧化硅片上旋涂一层聚甲基丙烯酸甲酯溶液；
(3)将涂有聚甲基丙烯酸甲酯溶液的样品放入1mol/L的KOH溶液中，10小时后，把剥离下来的薄膜转移至去离子水中清洗，然后再转移至碲化镉晶体上，烘干，再用丙酮、去离子水冲洗，最后晾干即可。
3、通过热蒸发在二维二硫化钼薄膜表面和碲化镉晶体表面制备50纳米厚的金电极作为第一金属电极和第二金属电极，即完成II型异质结近红外光电探测器的制备。
基于本实施例制备的II型异质结近红外光电探测器在黑暗中和不同波长光照下测得的电流与电压关系曲线如图3所示，从图中看出探测器对光有明显的响应。
基于本实施例制备II型异质结近红外光电探测器在780nm波长0V、-5V、-10V、-15V、-20V电压下对光开关转换随时间关系曲线如图4所示，从图中可以看出探测器具有很快的响应速度和稳定性。
基于本实施例制备的II型异质结近红外光电探测器在200纳米波长和1700纳米波长下的光响应-时间曲线如图5和图6所示，从图中可以看出探测器具有宽的光谱响应范围。
Claims (5)
1.基于二维二硫化钼纳米薄膜与碲化镉晶体的II型异质结近红外光电探测器，其特征在于：
所述的II型异质结近红外光电探测器是在碲化镉晶体(1)表面的部分区域平铺有二维二硫化钼纳米薄膜(2)；在所述二维二硫化钼纳米薄膜(2)上设置有与所述二维二硫化钼纳米薄膜(2)呈欧姆接触的第一金属电极(3)，在所述碲化镉晶体(1)上设置有与所述碲化镉晶体(1)呈欧姆接触的第二金属电极(4)，所述第二金属电极(4)与所述二维二硫化钼纳米薄膜(2)间隔设置；
所述碲化镉晶体(1)与二维二硫化钼纳米薄膜(2)之间形成II型异质结，并以所述第一金属电极(3)和所述第二金属电极(4)作为两输出级，构筑成为II型异质结近红外光电探测器。
2.根据权利要求1所述的II型异质结近红外光电探测器，其特征在于：所述碲化镉晶体(1)的导电类型为p型、电阻率为1×103-1×107Ω·cm-1。
3.根据权利要求1所述的II型异质结近红外光电探测器，其特征在于：所述二维二硫化钼纳米薄膜(2)的厚度在0.65～100纳米范围内。
4.根据权利要求1所述的II型异质结近红外光电探测器，其特征在于：所述第一金属电极(3)与所述第二金属电极(4)各自独立的选自是金、银、铂、铝、铜或钛。
5.一种权利要求1～4中任意一项所述的II型异质结近红外光电探测器的制备方法，其特征在于：
首先，通过两步热分解方法制备二维二硫化钼纳米薄膜；然后将所得二维二硫化钼纳米薄膜转移到碲化镉晶体表面；最后再通过热蒸发或电子束镀膜方法在二维二硫化钼纳米薄膜上制备第一金属电极、在碲化镉晶体上制备第二金属电极，即完成II型异质结近红外光电探测器的制备。
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| CN113410317B (zh) * | 2021-06-22 | 2023-02-07 | 电子科技大学 | 一种具有表面等离激元的二维材料异质结光电探测器及其制备方法 |
| CN113871508A (zh) * | 2021-08-19 | 2021-12-31 | 华中科技大学 | 一种碲半导体薄膜红外探测器件 |
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