CN113410317B - 一种具有表面等离激元的二维材料异质结光电探测器及其制备方法 - Google Patents
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Abstract
本发明涉及一种具有表面等离激元的二硒化钨/二硫化钼异质结光电探测器及其制备方法，包括ITO电极、异质结：由二维二硒化钨和二硫化钼以范德华力结合在一起以及表面等离激元：由金纳米颗粒构成。发明提出的光电探测器，利用表面等离激元对光子能量的吸收作用来增强二维二硒化钨/二硫化钼异质结的光吸收和光响应。发明提出制备方法包括通过激光直写光刻技术在异质结区域的光刻胶上精确地刻出亚微尺寸特定图形如矩形或圆形等窗口、利用移液器在窗口区域滴加纳米颗粒溶液如金纳米颗粒溶液或银纳米颗粒溶液、在震动和加热环境下将金纳米颗粒富集在矩形窗口内的方式在异质结区域上引入表面等离激元。本发明提出的具有表面等离激元的二维材料异质结光电探测器的结构及其制备方法具有新颖和简单的特点。
Description
技术领域
本发明属于光通信技术领域，具体涉及一种光电探测器。
背景技术
光电探测器是将光信号转换成电信号的器件，它在光通信、遥感系统和视频成像等领域发挥着非常重要的作用。传统的光电探测器基于硅材料，但是由于硅是一种禁带宽度只有大约1.1eV的间接带隙半导体，因此这类光电探测器的探测范围只能从可见光到近红外光，并且光吸收效率低下。近年来兴起的二维半导体材料能够克服硅材料的限制，这类材料通常具有原子尺度的厚度，并展现出良好的光电特性，因而在微纳光电子器件制造中得到广泛的关注。但是由于原子级的厚度及透明的特性，光容易透过二维材料而不被吸收，因此二维材料面临着光吸收率低的问题。
表面等离激元是一种在金属表面区域的自由电子和光子相互作用形成的电磁振荡。表面等离激元共振可以有效地吸收光子的能量，增强金属对光子的吸收。表面等离激元在被激发之后会进行衰减，并将其能量传递给自由电子，使之成为热电子，热电子跨越金属半导体之间的肖特基势垒，形成光电流，从而增强半导体材料的光电响应。
发明内容
本发明提出一种具有金纳米颗粒表面等离激元的二硒化钨/二硫化钼异质结光电探测器，使用ITO为底电极，以一种新颖的、简单的制备方法在二硒化钨/二硫化钼异质结表面引入表面等离激元，增强异质结对光的吸收，提升器件的光响应。
本发明提供了一种具有表面等离激元的异质结光电探测器，包括：
以ITO为底电极，在二维二硒化钨/二硫化钼异质结重叠区域上方引入金纳米颗粒。
本发明提供了一种在异质结区域制备表面等离激元的简便方法，包括：
在异质结上旋涂光刻胶，使用激光直写光刻技术在异质结区域表面精确定点光刻出矩形窗口，并在窗口处用移液器滴加若干金纳米颗粒溶液，并将其放置在震动电机上，辅以40℃加热蒸干溶液，使金纳米颗粒富集于光刻胶的矩形窗口内。然后进行快速退火处理增强金纳米颗粒和异质结材料的接触。
本发明的主要优点：
1.本发明通过在二维材料异质结上引入表面等离激元，增强异质结对光的吸收，提高了二维材料异质结光电探测器的光响应。
2.本发明使用激光直写光刻的方式精确地在异质结区域表面光刻出矩形窗口，用移液器滴加金纳米颗粒，并在震动和加热条件下将金纳米颗粒富集于矩形窗口内，在异质结区域制备表面等离激元，制备方式简单、新颖。
附图说明
图1为具有金纳米颗粒表面等离激元的二硒化钨/二硫化钼异质结光电探测器的结构图。
图2为具有金纳米颗粒表面等离激元的二硒化钨/二硫化钼异质结光电探测器的光学显微镜图像。
图3是具有金纳米颗粒表面等离激元的二硒化钨/二硫化钼异质结光电探测器的制备流程图。
具体实施方式
图1是具有表面等离激元的二硒化钨/二硫化钼异质结光电探测器的结构图。器件从下到上分别是无机玻璃、ITO电极、二硫化钼、二硒化钨、光刻胶和金纳米颗粒。在图1所示结构图中，图形化ITO电极及异质结的制备方式是：先在无机玻璃上沉积ITO薄膜，甩上一层正性光刻胶，然后利用激光直写光刻技术在光刻胶上光刻出与电极图案相反的图形，然后将覆盖光刻胶的ITO放入刻蚀液中进行湿法刻蚀，最后去胶制得图形化的ITO电极。二维层状二硒化钨和二硫化钼材料通过机械剥离法从块状材料上剥离制得，然后通过微位移台在超景深显微镜的辅助下转移并堆叠至ITO电极上。随后，通过在异质结上甩胶和引入金纳米颗粒值得最终的器件。
图2是具有表面等离激元的二硒化钨/二硫化钼异质结光电探测器的光学显微镜图。在图2所示的光学显微镜图中，光刻窗口仅位于异质结重叠区域并且窗口内已经经过显影去除光刻胶，光刻窗口之外的区域仍然覆盖光刻胶。在滴加金纳米溶液后，只有异质结重叠区域具有与二维材料接触的金纳米颗粒，因此只在异质结区域能够形成表面等离激元。
图3是表面等离激元的制备流程图。将二硒化钨/二硫化钼异质结堆叠到ITO电极上后，在异质结上旋涂一层光刻胶，利用激光直写光刻技术对异质结区域精确定点光刻出矩形窗口，然后在120℃热台上固胶10分钟，待自然冷却后，使用移液器取5uL金纳米颗粒溶液滴加在光刻窗口处，然后将异质结器件固定在震动电机上，并且于放置于40℃热台，在震动和加热的条件下让金纳米颗粒溶液蒸干。最后，将具有金纳米颗粒的异质结器件放入快速退火炉中，在20秒内升温到120℃，并在120℃环境下退火5分钟制得最终的表面等离激元异质结光电探测器。
Claims (2)
1.一种具有表面等离激元的二维材料异质结光电探测器，其特征在于，包括：ITO电极、二维二硫化钼/二硒化钨异质结、所述异质结光电探测器上覆盖光刻胶隔离层、所述异质结重叠区域具有矩形光刻窗口、所述光刻窗口内分布金纳米颗粒；所述ITO电极由激光直写光刻和湿法刻蚀制得；所述二硫化钼/二硒化钨异质结是由机械剥离法和干转移法制得。
2.一种具有表面等离激元的二维材料异质结光电探测器的制备方法，其特征在于，包括以下步骤：
（1）采用气相沉积法制备ITO薄膜;
（2）ITO薄膜经过激光直写光刻和湿法刻蚀以制备图形化ITO电极;
（3）在ITO电极上堆叠二维异质结：通过机械剥离法撕出少层二硫化钼和二硒化钨，然后在显微镜的辅助下堆叠在ITO电极上形成异质结;
（4）旋涂光刻胶，并利用激光直写光刻技术在异质结区域定点光刻矩形窗口;
（5）使用移液器取5uL直径为200纳米的金纳米溶液，滴在光刻后的窗口处;
（6）把样品固定在震动电机上，并在热台上40℃加热蒸干溶液;
（7）把样品放进快速退火炉中，20s内升温至120℃，并在120℃环境下退火5分钟。
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| CN111653648A (zh) * | 2020-05-29 | 2020-09-11 | 江苏大学 | 基于表面等离激元电调制过渡金属硫化物激子束缚能的光探测器、制备方法及用途 |
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| CN110416235B (zh) * | 2019-07-12 | 2021-11-05 | 东南大学 | 一种中空表面等离激元结构的二维材料复合多色红外探测芯片 |
| KR102346834B1 (ko) * | 2019-11-20 | 2022-01-04 | 한양대학교 산학협력단 | 전이금속 디칼코겐 화합물 기반 광검출기 및 이의 제조 방법 |
| CN111009586A (zh) * | 2019-11-29 | 2020-04-14 | 深圳市立洋光电子股份有限公司 | 光电器件及其制备方法 |
-
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109449243A (zh) * | 2018-11-12 | 2019-03-08 | 郑州大学 | 基于二维二硫化钼纳米薄膜与碲化镉晶体的ii型异质结近红外光电探测器及其制备方法 |
| CN111653648A (zh) * | 2020-05-29 | 2020-09-11 | 江苏大学 | 基于表面等离激元电调制过渡金属硫化物激子束缚能的光探测器、制备方法及用途 |
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