CN110808294B - 二维铌酸锶纳米片紫外光电晶体管探测器 - Google Patents
二维铌酸锶纳米片紫外光电晶体管探测器 Download PDFInfo
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Abstract
本发明属于半导体光电器件技术领域，具体为二维铌酸锶纳米片紫外光电晶体管探测器。本发明紫外探测器包括：SiO2/Si衬底、铌酸锶Sr2Nb3O10纳米片和铬‑金接触电极。其中Sr2Nb3O10纳米片旋涂分散于SiO2/Si衬底上，紫外光刻铬‑金电极与纳米片上表面接触，形成背栅极紫外光电晶体管结构。二维铌酸锶纳米片具有高禁带宽度，可实现无滤波片窄带紫外光探测；微米电极距离接近，紫外光照射下具有很高的探测率和光电增益，响应速度较快；形成背栅极光电晶体管，可通过调节栅压对纳米片载流子浓度进行调控，不同栅压下具有双极特性；该二维铌酸锶晶体管器件边长仅约200μm，有助于实现器件小型化应用。
Description
技术领域
本发明属于半导体光电器件技术领域，具体涉及一种二维铌酸锶纳米片紫外光电晶体管探测器。
背景技术
近年来，高性能紫外探测器得到较大发展，广泛应用于光谱分析、环境监测、光电器件等领域。由于宽禁带半导体具有结构简单、无需复杂的滤波装置等优点，得到广泛关注。目前许多UVA紫外探测材料存在响应速度较慢、暗电流较大等缺点，而光电子器件逐渐向小型化、节能化、柔性可穿戴等方向发展。二维钙钛矿材料，具有吸光度高、带隙可调、可见光透明度高、力学性能好等优点，已成为下一代光电探测器的重要备选。层状氧化物钙钛矿不仅具有钙钛矿材料的优异性质，同时能够克服有机-无机杂化钙钛矿环境不稳定的缺点。液相剥离法能够将层状块体材料剥离成二维纳米片，非常适合于二维材料的大批量制备，对今后中试乃至工业化生产具有一定意义。同时，微纳加工技术的发展，为高性能二维光电晶体管器件的制备打下了坚实的基础。
发明内容
本发明的目的在于提供一种探测率高、探测波段窄、增益大、可栅压调控的二维铌酸锶纳米片紫外光电晶体管探测器。
本发明提供的二维铌酸锶纳米片紫外光电晶体管探测器，其结构如图1所示，包括：
SiO2/Si衬底；
旋涂分散于SiO2/Si衬底上的铌酸锶（Sr2Nb3O10）纳米片；
与纳米片上表面接触的铬-金电极。
其中，探测器源极、漏极为铬-金电极，栅极为重掺杂p型硅。
本发明中，以铌酸锶纳米片实现紫外光探测，以紫外光刻技术制备的铬-金接触电极进行载流子收集，不加栅压时，形成光电导型紫外光探测器。
本发明中，通过高温固相反应-离子交换-液相剥离制备的铌酸锶Sr2Nb3O10纳米片，旋涂分散于SiO2/Si衬底上。
进一步地，制备的铌酸锶Sr2Nb3O10纳米片直径可达0.5~5μm，依剥离层数不同，纳米片厚度在1.5~15nm之间。
进一步地，所述铬-金接触电极厚度为30 nm~60 nm。
进一步地，晶体管使用的衬底为带有250-400nm氧化层的重掺杂p型硅。
上述铌酸锶纳米片紫外光电晶体管探测器的制备方法，具体步骤为：
（1）铌酸锶纳米片制备，其制备步骤为：99.9%纯度的固态Cs2CO3、SrCO3和Nb2O5粉末，按照摩尔比1：（1.5-2.5）：（2.5-3.5）混合研磨0.5-6小时（优选0.5—2小时），在1150~1400℃下高温烧结6-48小时（优选6—15小时），产物随炉冷却；将所得产物与1~5mol/L盐酸混合，进行离子交换3~7天，之后以超纯水洗涤产物并烘干；将所得产物与等摩尔比的四丁基氢氧化铵（TBAOH）混合，用多用振荡器在室温下震荡7~14天，离心，可得剥离完成的铌酸锶纳米片。如有需要，可利用超纯水多次洗涤产物，并离心；
（2）铬-金电极的制备，其制备步骤为：清洗SiO2/Si衬底表面：先后用丙酮、乙醇、超纯水清洗SiO2/Si衬底表面10 min~20 min，并将衬底吹干；将步骤（1）所得铌酸锶纳米片旋涂分散于衬底表面；定位纳米片后，旋涂光刻胶，利用紫外光刻在铌酸锶纳米片上表面制备电极图案，以电子束蒸发或热蒸发法沉积铬-金接触电极层，电极厚度为30 nm~60 nm，去除光刻胶并烘干，即得铌酸锶纳米片光电晶体管。
所述的紫外光电晶体管具有如下优势：
1、二维铌酸锶纳米片具有高禁带宽度，可实现无滤波片窄带紫外光探测；
2、微米电极距离接近，紫外光照射下具有很高的探测率和光电增益，响应速度较快；
3、形成背栅极光电晶体管，可通过调节栅压对纳米片载流子浓度进行调控，不同栅压下具有双极特性；
4、该二维铌酸锶晶体管器件边长仅约200μm，有助于实现器件小型化应用。
附图说明
图1为本发明的二维铌酸锶纳米片紫外光电晶体管探测器的结构示意图。
图2为本发明的二维铌酸锶纳米片紫外光电晶体管探测器的原子力显微镜（AFM）图。
图3为本发明的二维铌酸锶纳米片紫外光电晶体管探测器的光电测试结果：在暗态和270nm紫外光照下的电流-电压曲线。
图4为本发明的二维铌酸锶纳米片紫外光电晶体管探测器的光电测试结果：不同入射波长下的响应率曲线。
图中标号：1为SiO2/Si衬底的Si层，2为SiO2/Si衬底的SiO2层，3为铌酸锶（Sr2Nb3O10）纳米片，4为铬-金接触电极。
具体实施方式
实施例1，一种二维铌酸锶纳米片紫外光电晶体管探测器，如图1所示，包括SiO2/Si衬底1、2，旋涂分散于衬底上的铌酸锶Sr2Nb3O10纳米片3，与纳米片上表面接触的铬-金电极4。
本实施例二维铌酸锶纳米片紫外光电晶体管探测器的制备步骤为：
（1）铌酸锶纳米片制备，采用高温固相反应-离子交换-液相剥离的方法：99.9%纯度的固态Cs2CO3、SrCO3和Nb2O5粉末，按照摩尔比1:1.8:2.5混合研磨1小时，在1200℃下高温烧结6小时，产物随炉冷却。将所得产物与1mol/L浓度的盐酸混合，进行离子交换5天，之后以超纯水洗涤产物多次，并烘干。称取一定量的所得产物，与等摩尔比四丁基氢氧化铵（TBAOH）溶液进行混合，用多用振荡器在室温下震荡10天，离心可得剥离完成的铌酸锶纳米片。利用超纯水多次洗涤产物，并离心；
（2）铬-金电极的制备，采用紫外光刻技术：先后用丙酮、乙醇、超纯水清洗SiO2/Si衬底表面10 min，并用氮气将衬底吹干。将步骤（1）所得铌酸锶纳米片旋涂分散于衬底表面，使得纳米片分散均匀。定位纳米片后，旋涂光刻胶，利用紫外光刻在铌酸锶纳米片上表面制备电极图案，以电子束蒸发或热蒸发法沉积铬-金接触电极层，电极厚度为50nm，去除光刻胶并烘干。可得铌酸锶纳米片光电晶体管。
实施例2，利用本发明制备的紫外光电晶体管探测器，对特定紫外波段入射光进行探测：
利用实施例1所示的紫外光电晶体管探测器，将器件源极、漏极分别与半导体测试系统连接，改变电压，记录在暗态和光照条件下流经器件的电流，如图3所示。相同电压下，器件在270nm紫外光照射时展现出更高的电流。
利用实施例1所示的紫外光电晶体管探测器，将器件源极、漏极分别与半导体测试系统连接，偏压恒定，改变入射紫外光波长，记录流经器件的电流，经计算可得响应率，如图4所示。器件在270nm紫外波长附近展现出良好的探测性能，响应率高，探测波长范围窄。
Claims (1)
1.一种二维铌酸锶纳米片紫外光电晶体管探测器的制备方法，其特征在于，
该探测器包括：
SiO2/Si衬底；
旋涂分散于SiO2/Si衬底上的铌酸锶纳米片，用于实现紫外光探测；
与纳米片上表面接触的铬-金电极，用于进行载流子收集；
具体步骤如下：
（1）铌酸锶纳米片制备，其步骤为：99.9%纯度的固态Cs2CO3、SrCO3和Nb2O5粉末，按照摩尔比1：（1.5-2.5）：（2.5-3.5）混合研磨0.5-6小时，在1150~1400℃下高温烧结6-48小时，产物随炉冷却；将所得产物与1~5mol/L盐酸混合，进行离子交换3~7天，之后以超纯水洗涤产物并烘干；将所得产物与等摩尔比的四丁基氢氧化铵混合，用多用振荡器在室温下震荡7~14天，离心，得剥离完成的铌酸锶纳米片；
（2）铬-金电极的制备，其步骤为：清洗SiO2/Si衬底表面，并将衬底吹干；将步骤（1）所得铌酸锶纳米片旋涂分散于衬底表面；定位纳米片后，旋涂光刻胶，利用紫外光刻在铌酸锶纳米片上表面制备电极图案，以电子束蒸发或热蒸发法沉积铬-金接触电极层，电极厚度为30nm~60 nm，去除光刻胶并烘干，即得铌酸锶纳米片光电晶体管。
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| EP2743946A2 (en) * | 2012-12-13 | 2014-06-18 | Instytut Technologii Materialów Elektronicznych | Use of Material, Especially an Eutectic One, as an Active Layer in an Electrode and an Electrode Comprising an Active Layer of Material, Especially an Eutectic One |
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