CN107768452A - 一种增强型石墨烯‑硅异质结光电探测芯片及其制备方法 - Google Patents
一种增强型石墨烯‑硅异质结光电探测芯片及其制备方法 Download PDFInfo
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Abstract
本发明公开了石墨烯‑硅异质结光电探测芯片及其制备方法,探测芯片包括:硅衬底;框形SiO2绝缘层,位于硅衬底周围边界;界面钝化层,位于硅衬底之上;石墨烯层,位于界面钝化层之上;金属纳米结构层,位于石墨烯层之上。通过在芯片结构中引入金属纳米结构,一方面,利用金属纳米结构的局域表面等离激元共振特性,可显著提升石墨烯/硅异质结的光吸收效率,提升器件的光响应度和线性光响应范围;另一方面,利用金属纳米结构在光激发下超快的光电转换过程,可显著提升芯片的光谱响应速率和频率特性;此外,利用不同材质、尺寸金属纳米颗粒具有的不同光谱共振特性,可显著改善探测芯片的特定光谱增强特性。
Description
技术领域
本发明属于光电技术领域,具体涉及石墨烯-硅异质结型光电探测芯片及其制作方法。
背景技术
光电探测芯片是一种通过将光信号转换为电信号从而获取光信息的媒介。由于具有体积小、功耗低、灵敏度高等优点,光电探测芯片已经遍布人们生活中的各个领域,尤其是近些年来智能家电及智能穿戴设备的飞速发展,使得这种基础信息交换元件成为当今应用最为广泛的一类电子器件。
传统光电探测芯片主要是以硅、锗、砷化镓等半导体材料的PN或PIN结构为主,探测光谱波段可覆盖紫外至远红外波段。随着电子信息领域的快速发展,这类材料在制备高性能探测芯片方面面临着诸多的限制问题:如单质半导体中掺杂浓度受材料本身固溶度的限制,而多元化合物半导体中元素种类及含量的调控局限性大,工艺复杂,且难以与硅基进行集成化等。
石墨烯-硅异质结探测芯片是近年来发展起来的新型光伏型光电探测器件。在光照情况下,该型探测芯片利用石墨烯与N型硅接触时形成的肖特基异质结可有效将光生载流子分离,结合石墨烯材料本身低电导率(<10-6Ωcm)和常温下高电子迁移率(>1.5×104cm2V-1s-1),可实现高效的光电转换和电流响应。相比于当前应用较多的硅基PIN结构光电探测芯片,石墨烯/硅异质结光电探测芯片具有低成本、高灵敏、超低暗电流和宽光谱响应等一系列优势,且易于集成,制备工艺兼容现有的微电子制备工艺,在低功耗和高灵敏光电传感领域具有极大的应用前景,如智能触控、光电互联等。然而,当前石墨烯-硅异质结型光电探测芯片在光响应度方面的优势并不明显(一般为0.5A/W量级),响应速率提升和特定光谱增强方面还缺乏有效的调控手段。
发明内容
本发明的目的在于:提供一种增强型石墨烯-硅异质结光电探测芯片的制作方法,解决目前石墨烯-硅异质结光电探测芯片在光响应度、响应速率、特定光谱响应增强等方面性能有待提升的问题。
增强型石墨烯-硅异质结光电探测芯片的制作方法,包括步骤:
S1.提供具有N型掺杂的硅衬底;
S2.在所述的N型硅衬底表面生长一层SiO2层;
S3.通过光刻方法和刻蚀液腐蚀,在衬底上表面腐蚀部分SiO2层,制备出具有窗口区域裸露的N型硅;
S4.在衬底上表面生长或转移界面钝化层;
S5.在衬底上表面转移具有金属纳米结构修饰的石墨烯层;
S6.在衬底下表面和衬底上表面未刻蚀SiO2层的区域蒸镀金属电极。
优选的,所述的衬底为N型衬底,电阻率为0.01~10Ω·cm;
优选的,所述的SiO2绝缘层制备方法可采用热氧化、PECVD、LPCVD、磁控溅射、ALD沉积方法中的一种制备;
优选的,所述的SiO2绝缘层厚度可为100-1000nm;
优选的,所述的界面钝化层材料可为SiO2、Si3N4、hBN、AlN中的一种;
优选的,所述的界面钝化层材料厚度可为0.1nm-5nm;
优选的,所述的石墨烯层的层数为1-10层;
优选的,所述的金属纳米结构材料为Ag、Au、Al、Rh、Ni、Pt或任意组合或类金属材料如TiN等;
优选的,所述的金属纳米结构尺寸20-1000nm;
优选的,所述的金属纳米结构,是通过包括纳米球刻蚀技术、光刻、纳米压印、金属薄膜退火技术、旋涂合成的金属纳米粒子在内的方法对石墨烯层进行修饰得到。
优选的,所述的转移具有金属纳米结构修饰的石墨烯层,转移方法可采用湿法转移或干法转移中的一种。
一种石墨烯-硅异质结光电探测芯片,所述的探测芯片包括硅衬底;还包括SiO2绝缘层,位于硅衬底周围边界;界面钝化层,位于硅衬底之上;石墨烯层,位于界面钝化层之上;金属纳米结构层,位于石墨烯层之上,所述的金属纳米结构尺寸为20-1000nm。
与现有的技术相比,本发明的石墨烯-硅异质结光电探测芯片的制作方法,至少包括以下技术效果:本发明提出的具有表面等离激元共振特性的金属纳米结构的引入,一方面可利用表面等离激元共振的散射效应,有效提升石墨烯-硅异质界面的局域光场密度、显著提升石墨烯-硅异质结的光吸收效率,从而提升探测芯片的光响应度;另一方面,利用等离激元共振与异质结光生载流子的耦合效应,可显著提升探测芯片光响应速率。此外,通过调控金属纳米粒子的尺寸等参数,可实现不同频率波段的共振,进而实现特定波段光谱光响应度的提升,扩展探测芯片的光谱选择特性。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例一起用于解释本发明,并不构成对本发明的限制。此外,附图数据是描述概要,不是按比例绘制。
图1:实施例剖面示意图;
图2:实施例平面示意图;
图3:实施例到步骤S2的剖面示意图;
图4:实施例到步骤S3的剖面示意图;
图5:实施例到步骤S6的剖面示意图;
图6:实施例到步骤S8的剖面示意图;
图7:实施例具有金属纳米颗粒修饰的石墨烯表面SEM形貌图;
图8:采用FDTD模拟的有无金属纳米颗粒修饰时,石墨烯/硅异质界面区域的光吸收对比图;
图9:实施例与对比例随时间变化光照开关时的光电流响应曲线,其中光源为850nm LED,光强度为1mW/cm2;横坐标为时间,纵坐标为电流
图10:实施例与对比例随入射光功率强度连续变化时的光电流响应;横坐标为光强度,纵坐标为电流强度;
图11:实施例与对比例随入射光功率强度连续变化时的光响应度;横坐标为光强度,纵坐标为光响应度。
图中各标号标示:1.硅衬底;2.二氧化硅层;3.石墨烯;4.界面钝化层;5.金属纳米结构;6.上电极;7.背电极
具体实施方式
为了能彻底了解本发明,将在下列的描述中提出详尽的步骤及组成,另外,众所皆知的组成或步骤并未描述与细节中,以避免造成本发明不必要的限制。本发明的较好实施例详细描述如下,然而除了这些详细描述外,本发明还可广泛地施行在其他实施例中,且本发明的范围不受限定,以权利要求书范围为准。
本发明提出一种适用于石墨烯-硅异质结型光电探测芯片的制作方法,通过优化器件结构、引入表面等离激元共振效应来提升石墨烯-硅异质结界面的光吸收效率,进而提升器件光响应度、线性响应范围、响应速率等性能参数。
实施例:制备增强型石墨烯-硅异质结光电探测芯片:
S1.首先将4寸N型硅衬底进行RCA标准清洗,然后在热氧化炉中对硅片表面进行氧化,氧化层的厚度为300nm;之后将氧化后的硅片在丙酮、酒精、去离子水中各超声清洗20分钟;
S2.将清洗后的硅片进行光刻作业,在硅片正表面制备出阵列型的窗口图形区域;显影后,窗口区域露出;将显影、后烘后的晶片在BOE溶液中腐蚀2分钟,去除窗口区域和背面的SiO2层;去胶后在晶片正面窗口区域露出N型硅,该区域即为后续光电探测芯片的光吸收有源区,如图3所示,其中窗口区周围为未腐蚀的SiO2层;
S3.将完成上述步骤的晶片放置在湿度约为20%的干燥柜中5天,在暴露的硅窗口区自然氧化生成1-2nm后的界面钝化层SiO2,如图4所示的芯片单元;
S4.选用铜基CVD生长的3-6层的石墨烯薄膜,裁剪成7cm*7cm大小的片;将裁剪的铜基石墨烯固定在玻璃基板上;采用旋涂的方法在铜基石墨烯片表面旋涂合成的金纳米颗粒溶液,平均直径约为200nm,溶剂为氯苯,质量分数约为5%,旋涂速度为低速500rpm,5s,高速3000rpm,30s;之后将铜基石墨烯片在热板上干燥5分钟,温度为40℃;
S5.在上述干燥后的铜基石墨烯片表面再次旋涂PMMA溶液,浓度为10mg/ml,旋涂速度为5000rpm,时间为30s,旋涂完成后在热板上40℃干燥5分钟;
S6.采用湿法转移技术将石墨烯层转移至上述步骤S3制备的晶片上,制备出如图5所示的芯片单元。其中刻蚀液选用Marble's Reagent(CuSO4/HCl/H2O:10g/50mL/50mL);
S7.将转移石墨烯后的晶片放置在干燥柜中自然干燥8小时;之后将干燥后的晶片在丙酮溶液中浸泡2小时去除PMMA,溶液温度为40℃,接下来采用酒精和去离子水清洗晶片,并采用氮气吹干;
S8.将上述晶片采用光刻的方法结合磁控溅射,在晶片上下表面蒸镀Ti/Au电极,厚度为Ti/Au:5nm/100nm,在晶片上制备出如图6的芯片单元;
S9.采用激光划片,在晶片上分离单个探测芯片单元。
对比例:制备方法和实施例基本相同,所不同的是步骤S4中未旋涂金纳米粒子。
从图8的理论模拟可以看出,在石墨烯-硅异质界面的表面引入金属纳米结构修饰后,得益于金属纳米结构表面等离激元共振的局域场增强特性,显著提升了异质结界面的光子吸收强度,理论上可显著提升石墨烯-硅异质结光电探测芯片的光响应电流。图9显示了增强型石墨烯-硅异质结光电探测芯片实施例与对比例的开关光响应电流,可以看出,相比于对比例,引入表面等离激元共振特性的实施例显著提升了器件的光电流响应。从图10中还可以看出,引入等离激元共振后,器件不光在光响应强度方面有显著的提升,线性响应区间也有进一步的扩大。通过测试光电流响应,计算所得的光响应度如图11所示,相比于对比例,引入等离激元共振的实施例在光响应度上有超过20%的性能提升。
Claims (10)
1.增强型石墨烯硅-异质结光电探测芯片的制作方法,包括步骤:
S1.提供具有N型掺杂的硅衬底;
S2.在所述的N型硅衬底表面生长一层SiO2绝缘层;
S3.通过光刻方法和刻蚀液体,在衬底上表面腐蚀部分SiO2绝缘层,制备出具有窗口区域裸露的N型硅;
S4.在衬底上表面生长或转移界面钝化层;
S5.在衬底上表面转移具有金属纳米结构修饰的石墨烯层;
S6.在衬底下表面和衬底上表面未刻蚀SiO2层的区域蒸镀金属电极。
2.根据权利要求1所述的增强型石墨烯硅-异质结光电探测芯片的制备方法,其特征在于所述的衬底为N型衬底,电阻率为0.01~10Ω·cm。
3.根据权利要求1所述的增强型石墨烯硅-异质结光电探测芯片的制备方法,其特征在于:所述的界面钝化层材料包括但不限于SiO2、Si3N4、hBN、AlN中的一种;所述的界面钝化层材料厚度为0.1nm-5nm。
4.根据权利要求1所述的增强型石墨烯-硅异质结光电探测芯片的制备方法,其特征在于:所述的具有金属纳米结构修饰的石墨烯层,石墨烯的层数为1-10层。
5.根据权利要求1所述的增强型石墨烯硅-异质结光电探测芯片的制备方法,其特征在于:所述的金属纳米结构,是通过包括纳米球刻蚀技术、光刻、纳米压印、金属薄膜退火技术、旋涂合成的金属纳米粒子在内的方法对石墨烯层进行修饰得到。
6.据权利要求1所述的增强型石墨烯硅-异质结光电探测芯片的制备方法,其特征在于:所述的金属纳米材料为Ag、Au、Al、Rh、Ni、Pt中的一种或任意组合或类金属材料。
7.据权利要求1所述的增强型石墨烯硅-异质结光电探测芯片的制备方法,其特征在于:所述的金属纳米结构尺寸为20-1000nm。
8.据权利要求1所述的增强型石墨烯硅-异质结光电探测芯片的制备方法,其特征在于:所述的转移具有金属纳米结构修饰的石墨烯层,转移方法可采用湿法转移或干法转移中的一种。
9.一种石墨烯-硅异质结光电探测芯片,所述的探测芯片包括硅衬底;其特征在于:还包括SiO2绝缘层,位于硅衬底周围边界;界面钝化层,位于硅衬底之上;石墨烯层,位于界面钝化层之上;金属纳米结构层,位于石墨烯层之上,所述的金属纳米结构尺寸为20-1000nm。
10.如权利要求9所述的一种石墨烯-硅异质结光电探测芯片,其特征在于:所述的金属为Ag、Au、Al、Rh、Ni、Pt中的一种或任意组合或类金属材料。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104201221A (zh) * | 2014-08-28 | 2014-12-10 | 中国科学院半导体研究所 | 基于石墨烯-金属纳米颗粒复合材料的太阳能电池 |
CN104600131A (zh) * | 2015-01-16 | 2015-05-06 | 浙江大学 | 一种界面钝化的石墨烯/硅光电探测器及其制备方法 |
CN104851929A (zh) * | 2015-04-02 | 2015-08-19 | 中国人民解放军国防科学技术大学 | 基于石墨烯表面等离激元的光电材料可调吸收增强层 |
CN105206689A (zh) * | 2015-09-18 | 2015-12-30 | 中国科学院上海微系统与信息技术研究所 | 一种基于薄膜半导体-石墨烯异质结的光电探测器制备方法 |
CN106684199A (zh) * | 2017-02-13 | 2017-05-17 | 中北大学 | 金属微纳超结构表面等离激元超快探测结构 |
-
2017
- 2017-10-19 CN CN201710976199.5A patent/CN107768452A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104201221A (zh) * | 2014-08-28 | 2014-12-10 | 中国科学院半导体研究所 | 基于石墨烯-金属纳米颗粒复合材料的太阳能电池 |
CN104600131A (zh) * | 2015-01-16 | 2015-05-06 | 浙江大学 | 一种界面钝化的石墨烯/硅光电探测器及其制备方法 |
CN104851929A (zh) * | 2015-04-02 | 2015-08-19 | 中国人民解放军国防科学技术大学 | 基于石墨烯表面等离激元的光电材料可调吸收增强层 |
CN105206689A (zh) * | 2015-09-18 | 2015-12-30 | 中国科学院上海微系统与信息技术研究所 | 一种基于薄膜半导体-石墨烯异质结的光电探测器制备方法 |
CN106684199A (zh) * | 2017-02-13 | 2017-05-17 | 中北大学 | 金属微纳超结构表面等离激元超快探测结构 |
Cited By (11)
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