CN104600131A - 一种界面钝化的石墨烯/硅光电探测器及其制备方法 - Google Patents
一种界面钝化的石墨烯/硅光电探测器及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种界面钝化的石墨烯/硅光电探测器，自下而上依次有背面电极、硅片、氧化铝层、石墨烯层以及正面电极；其制备方法为：首先在洁净的硅片一面生长厚度为0.2~10nm的氧化铝层，将石墨烯转移至氧化铝层上，然后在石墨烯以及硅片另一面上分别制作正面电极和背面电极。本发明在硅片与石墨烯之间加入氧化铝界面钝化层，采用这样的特殊结构可以提高光电探测器的光生电压，同时可以提高其开关比，本发明的方法工艺简单，成本低廉，便于推广。
Description
技术领域
本发明涉及一种光电探测器及其制造方法，尤其涉及一种界面钝化的石墨烯/硅光电探测器及其制备方法，属于光电探测领域。
背景技术
光电探测器在军事和国民经济的各个领域有广泛用途，在可见光或近红外波段主要用于射线测量和探测、工业自动控制、光度计量等；在红外波段主要用于导弹制导、红外热成像、红外遥感等方面。硅材料作为一种最重要的半导体材料，也是光电探测器应用中最重要的衬底材料，硅基光电探测器在可见光波段以及近红外波段具有较好的响应度。但常规的硅基光电探测器制造工艺涉及高温扩散等工艺，制造工艺相对复杂。
发明内容
本发明的目的在于提供一种具有高开关比的界面钝化的石墨烯/硅光电探测器及其制备方法。
本发明的界面钝化的石墨烯/硅光电探测器，自下而上依次有背面电极、硅片、氧化铝层、石墨烯层以及正面电极。
上述方案中，所述的石墨烯层中的石墨烯为1层至10层。
所述的硅片通常为n型或者p型。
所述的氧化铝层厚度通常为0.2纳米至10纳米。
所述的背面电极和正面电极均可以为金、钯、银、钛、铬、镍和铟镓合金中的一种或者几种的复合电极。
制备上述的界面钝化的石墨烯/硅光电探测器的方法，包括以下步骤：
1）将表面无损伤的硅片清洗干净，并吹干；
2）在步骤1）处理的硅片的一面生长厚度为0.2-10nm的氧化铝层；
3）将石墨烯转移至步骤2）的氧化铝层上；
4）在硅片的另一面上制作背面电极，在石墨烯层上制作正面电极。
本发明与现有技术相比具有的有益效果是：
本发明在硅片与石墨烯之间加入氧化铝界面钝化层，采用这样的特殊结构可以提高光电探测器的光生电压，同时可以提高其开关比，本发明的方法工艺简单，成本低廉，便于推广。
附图说明
图1是界面钝化的石墨烯/硅光电探测器的结构示意图。
具体实施方式
本发明的界面钝化的石墨烯/硅光电探测器，自下而上依次有背面电极1、硅片2、氧化铝层3、石墨烯层4以及正面电极5。
实施例1：
1）将表面无损伤的p型掺杂电阻率约1Ω·cm的硅衬底清洗干净，并吹干；
2）在硅衬底的一面上利用原子层沉积技术生长0.2nm的氧化铝层；
3）将单层石墨烯转移至氧化铝层上；
4）在硅衬底背面制作铟镓合金电极；
5）在石墨烯上涂银浆并烘干得到界面钝化石墨烯/硅光电探测器。
实施例2：
1）将表面无损伤的n型掺杂电阻率约1Ω·cm的硅衬底清洗干净，并吹干；
2）在硅衬底一面上利用原子层沉积技术生长1nm的氧化铝层；
3）将10层石墨烯转移至氧化铝层上；
4）在硅衬底背面利用热蒸发沉积金电极；
5）在石墨烯上利用磁控溅射沉积铬镍复合电极得到界面钝化石墨烯/硅光电探测器。
实施例3：
1）将表面无损伤的n型掺杂电阻率约10Ω·cm的硅衬底清洗干净，并吹干；
2）在硅衬底一面上利用原子层沉积技术生长10nm的氧化铝层；
3）将5层石墨烯转移至氧化铝层上；
4）在硅衬底背面利用电子束蒸发沉积钛钯银复合电极；
5）在石墨烯上利用磁控溅射沉积金电极得到界面钝化石墨烯/硅光电探测器。
Claims (6)
1.一种界面钝化的石墨烯/硅光电探测器，其特征在于自下而上依次有背面电极（1）、硅片（2）、氧化铝层（3）、石墨烯层（4）以及正面电极（5）。
2.根据权利要求1所述的界面钝化的石墨烯/硅光电探测器，其特征在于所述的石墨烯层（4）中的石墨烯为1层至10层。
3.根据权利要求1所述的界面钝化的石墨烯/硅光电探测器，其特征在于所述的硅片为n型或者p型。
4.根据权利要求1所述的界面钝化的石墨烯/硅光电探测器，其特征在于所述的氧化铝层（3）的厚度为0.2纳米至10纳米。
5.根据权利要求1所述的界面钝化石墨烯/硅光电探测器，其特征在于所述的背面电极和正面电极均为金、钯、银、钛、铬、镍和铟镓合金中的一种或者几种的复合电极。
6.制备如权利要求1-5任一项所述的界面钝化的石墨烯/硅光电探测器的方法，其特征在于包括以下步骤：
1）将表面无损伤的硅片清洗干净，并吹干；
2）在步骤1）处理的硅片的一面生长0.2-10nm厚的氧化铝层；
3）将石墨烯转移至步骤2）的氧化铝层上；
4）在硅片的另一面上制作背面电极，在石墨烯层上制作正面电极。
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107104165A (zh) * | 2017-04-18 | 2017-08-29 | 云南大学 | 一种基于石墨烯硅倒金字塔阵列肖特基光伏电池制造方法 |
| CN107256899A (zh) * | 2017-06-28 | 2017-10-17 | 泰州巨纳新能源有限公司 | 基于石墨烯‑硅异质结的无源位置灵敏探测器 |
| CN107768452A (zh) * | 2017-10-19 | 2018-03-06 | 厦门大学 | 一种增强型石墨烯‑硅异质结光电探测芯片及其制备方法 |
| CN112002785A (zh) * | 2020-09-09 | 2020-11-27 | 合肥工业大学 | 一种硅基微腔窄带近红外光电探测器 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103633183A (zh) * | 2013-11-18 | 2014-03-12 | 西安电子科技大学 | 一种石墨烯中远红外探测器及其制备方法 |
| CN104062676A (zh) * | 2014-05-29 | 2014-09-24 | 中国空间技术研究院 | 基于石墨烯电场效应的x射线和带电粒子探测器及探测方法 |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103633183A (zh) * | 2013-11-18 | 2014-03-12 | 西安电子科技大学 | 一种石墨烯中远红外探测器及其制备方法 |
| CN104062676A (zh) * | 2014-05-29 | 2014-09-24 | 中国空间技术研究院 | 基于石墨烯电场效应的x射线和带电粒子探测器及探测方法 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107104165A (zh) * | 2017-04-18 | 2017-08-29 | 云南大学 | 一种基于石墨烯硅倒金字塔阵列肖特基光伏电池制造方法 |
| CN107256899A (zh) * | 2017-06-28 | 2017-10-17 | 泰州巨纳新能源有限公司 | 基于石墨烯‑硅异质结的无源位置灵敏探测器 |
| CN107256899B (zh) * | 2017-06-28 | 2019-03-08 | 泰州巨纳新能源有限公司 | 无源位置灵敏探测器、其制备方法及其测量方法 |
| CN107768452A (zh) * | 2017-10-19 | 2018-03-06 | 厦门大学 | 一种增强型石墨烯‑硅异质结光电探测芯片及其制备方法 |
| CN112002785A (zh) * | 2020-09-09 | 2020-11-27 | 合肥工业大学 | 一种硅基微腔窄带近红外光电探测器 |
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