CN108133970A - 一种InAs/GaSb超晶格红外探测器及其制作方法 - Google Patents
一种InAs/GaSb超晶格红外探测器及其制作方法 Download PDFInfo
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- CN108133970A CN108133970A CN201711065363.3A CN201711065363A CN108133970A CN 108133970 A CN108133970 A CN 108133970A CN 201711065363 A CN201711065363 A CN 201711065363A CN 108133970 A CN108133970 A CN 108133970A
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- inas
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- 229910005542 GaSb Inorganic materials 0.000 title claims abstract description 140
- 229910000673 Indium arsenide Inorganic materials 0.000 title claims abstract description 138
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 title claims abstract description 138
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 37
- 230000012010 growth Effects 0.000 claims abstract description 27
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000126 substance Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 11
- 230000007797 corrosion Effects 0.000 claims description 10
- 238000005260 corrosion Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 14
- 238000009825 accumulation Methods 0.000 abstract description 4
- 230000009643 growth defect Effects 0.000 abstract description 4
- 230000008595 infiltration Effects 0.000 abstract description 2
- 238000001764 infiltration Methods 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 10
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 2
- 235000005979 Citrus limon Nutrition 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004211 migration-enhanced epitaxy Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000026267 regulation of growth Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 244000248349 Citrus limon Species 0.000 description 1
- 244000131522 Citrus pyriformis Species 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- -1 mercury cadmium tellurides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
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CN201711065363.3A CN108133970B (zh) | 2017-11-02 | 2017-11-02 | 一种InAs/GaSb超晶格红外探测器及其制作方法 |
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CN201711065363.3A CN108133970B (zh) | 2017-11-02 | 2017-11-02 | 一种InAs/GaSb超晶格红外探测器及其制作方法 |
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CN108133970A true CN108133970A (zh) | 2018-06-08 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110373195A (zh) * | 2019-06-26 | 2019-10-25 | 中国电子科技集团公司第十一研究所 | 腐蚀液及从二类超晶格外延薄膜层去除锑化镓衬底的方法 |
CN112201712A (zh) * | 2020-09-21 | 2021-01-08 | 武汉高芯科技有限公司 | 超晶格梯度能带空穴势垒层结构以及红外探测器 |
CN112563352A (zh) * | 2020-12-08 | 2021-03-26 | 湖南科莱特光电有限公司 | InAs/InAsSb II类超晶格材料及其制备方法和红外波段探测器 |
CN114197055A (zh) * | 2022-02-18 | 2022-03-18 | 武汉高芯科技有限公司 | InAs/InSb应变超晶格材料及其制备方法 |
CN116722063A (zh) * | 2023-08-10 | 2023-09-08 | 太原国科半导体光电研究院有限公司 | 一种平面结构超晶格红外探测器及其制备方法 |
Citations (7)
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US5429963A (en) * | 1994-04-25 | 1995-07-04 | The United States Of America As Represented By The Secretary Of The Air Force | Twin-tub complementary heterostructure field effect transistor fab process |
JP2012009777A (ja) * | 2010-06-28 | 2012-01-12 | Sumitomo Electric Ind Ltd | 半導体ウエハおよび半導体装置 |
CN102544229A (zh) * | 2012-02-17 | 2012-07-04 | 中国科学院半导体研究所 | 甚长波InAs/GaSb二类超晶格红外探测器材料的制备方法 |
US20120273815A1 (en) * | 2011-04-29 | 2012-11-01 | Institute Of Nuclear Energy Research Atomic Energy Council, Executive Yuan | Lift-off structure for substrate of a photoelectric device and the method thereof |
CN203056367U (zh) * | 2012-07-20 | 2013-07-10 | 沈光地 | 双面散热的高效大功率半导体激光器 |
CN104810444A (zh) * | 2015-03-04 | 2015-07-29 | 华灿光电(苏州)有限公司 | 发光二极管外延片及其制备方法、发光二极管芯片制备及衬底回收方法 |
CN107910401A (zh) * | 2017-06-28 | 2018-04-13 | 超晶科技(北京)有限公司 | 一种二类超晶格红外探测器件材料的制备方法 |
-
2017
- 2017-11-02 CN CN201711065363.3A patent/CN108133970B/zh active Active
Patent Citations (7)
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US5429963A (en) * | 1994-04-25 | 1995-07-04 | The United States Of America As Represented By The Secretary Of The Air Force | Twin-tub complementary heterostructure field effect transistor fab process |
JP2012009777A (ja) * | 2010-06-28 | 2012-01-12 | Sumitomo Electric Ind Ltd | 半導体ウエハおよび半導体装置 |
US20120273815A1 (en) * | 2011-04-29 | 2012-11-01 | Institute Of Nuclear Energy Research Atomic Energy Council, Executive Yuan | Lift-off structure for substrate of a photoelectric device and the method thereof |
CN102544229A (zh) * | 2012-02-17 | 2012-07-04 | 中国科学院半导体研究所 | 甚长波InAs/GaSb二类超晶格红外探测器材料的制备方法 |
CN203056367U (zh) * | 2012-07-20 | 2013-07-10 | 沈光地 | 双面散热的高效大功率半导体激光器 |
CN104810444A (zh) * | 2015-03-04 | 2015-07-29 | 华灿光电(苏州)有限公司 | 发光二极管外延片及其制备方法、发光二极管芯片制备及衬底回收方法 |
CN107910401A (zh) * | 2017-06-28 | 2018-04-13 | 超晶科技(北京)有限公司 | 一种二类超晶格红外探测器件材料的制备方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110373195A (zh) * | 2019-06-26 | 2019-10-25 | 中国电子科技集团公司第十一研究所 | 腐蚀液及从二类超晶格外延薄膜层去除锑化镓衬底的方法 |
CN112201712A (zh) * | 2020-09-21 | 2021-01-08 | 武汉高芯科技有限公司 | 超晶格梯度能带空穴势垒层结构以及红外探测器 |
CN112201712B (zh) * | 2020-09-21 | 2022-03-22 | 武汉高芯科技有限公司 | 超晶格梯度能带空穴势垒层结构以及红外探测器 |
CN112563352A (zh) * | 2020-12-08 | 2021-03-26 | 湖南科莱特光电有限公司 | InAs/InAsSb II类超晶格材料及其制备方法和红外波段探测器 |
CN114197055A (zh) * | 2022-02-18 | 2022-03-18 | 武汉高芯科技有限公司 | InAs/InSb应变超晶格材料及其制备方法 |
CN114197055B (zh) * | 2022-02-18 | 2022-07-22 | 武汉高芯科技有限公司 | InAs/InSb应变超晶格材料及其制备方法 |
CN116722063A (zh) * | 2023-08-10 | 2023-09-08 | 太原国科半导体光电研究院有限公司 | 一种平面结构超晶格红外探测器及其制备方法 |
CN116722063B (zh) * | 2023-08-10 | 2023-10-31 | 太原国科半导体光电研究院有限公司 | 一种平面结构超晶格红外探测器及其制备方法 |
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