CN1138355A - 球状晶体的制造方法 - Google Patents

球状晶体的制造方法 Download PDF

Info

Publication number
CN1138355A
CN1138355A CN95191160A CN95191160A CN1138355A CN 1138355 A CN1138355 A CN 1138355A CN 95191160 A CN95191160 A CN 95191160A CN 95191160 A CN95191160 A CN 95191160A CN 1138355 A CN1138355 A CN 1138355A
Authority
CN
China
Prior art keywords
spherulite
jut
crystal
mentioned
tunicle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN95191160A
Other languages
English (en)
Chinese (zh)
Inventor
中田仗祐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CN1138355A publication Critical patent/CN1138355A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN95191160A 1994-11-10 1995-08-07 球状晶体的制造方法 Pending CN1138355A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6302799A JP2787550B2 (ja) 1994-11-10 1994-11-10 球状結晶の製造方法
JP302799/94 1994-11-10

Publications (1)

Publication Number Publication Date
CN1138355A true CN1138355A (zh) 1996-12-18

Family

ID=17913258

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95191160A Pending CN1138355A (zh) 1994-11-10 1995-08-07 球状晶体的制造方法

Country Status (9)

Country Link
US (1) US5817173A (enExample)
EP (1) EP0738791A4 (enExample)
JP (1) JP2787550B2 (enExample)
KR (1) KR960706188A (enExample)
CN (1) CN1138355A (enExample)
AU (1) AU687601B2 (enExample)
CA (1) CA2176606A1 (enExample)
TW (1) TW285749B (enExample)
WO (1) WO1996015298A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101805925B (zh) * 2010-02-20 2012-08-15 西安隆基硅材料股份有限公司 太阳能电池用掺镓铟单晶硅材料及其制备方法
CN114920251A (zh) * 2022-04-29 2022-08-19 江西广源化工有限责任公司 一种高球度硅微粉及其制备方法
CN114920249A (zh) * 2022-04-29 2022-08-19 江西广源化工有限责任公司 一种失重射流球形微粉制造设备
CN115044963A (zh) * 2022-06-06 2022-09-13 中国科学院电工研究所 一种电子束加热制备球状金属单晶的装置及方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5955776A (en) * 1996-12-04 1999-09-21 Ball Semiconductor, Inc. Spherical shaped semiconductor integrated circuit
JPH1180964A (ja) 1997-07-07 1999-03-26 Canon Inc プラズマｃｖｄ法による堆積膜形成装置
JP4496497B2 (ja) * 1998-03-25 2010-07-07 セイコーエプソン株式会社 アクティブマトリクス基板及びその製造方法
RU2139373C1 (ru) * 1998-07-07 1999-10-10 Макин Владимир Сергеевич Способ формирования выступа типа острия
US6074476A (en) * 1998-07-10 2000-06-13 Ball Semiconductor, Inc. Non-contact processing of crystal materials
US6264742B1 (en) 1998-07-10 2001-07-24 Ball Semiconductor Inc. Single crystal processing by in-situ seed injection
JP2000247800A (ja) * 1998-12-28 2000-09-12 Asahi Chem Ind Co Ltd 突起物を持った金属酸化物構造体
JP4675942B2 (ja) * 1999-06-09 2011-04-27 株式会社リコー 結晶製造装置
US6355873B1 (en) 2000-06-21 2002-03-12 Ball Semiconductor, Inc. Spherical shaped solar cell fabrication and panel assembly
US6746942B2 (en) * 2000-09-05 2004-06-08 Sony Corporation Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device
US6383287B1 (en) 2000-09-28 2002-05-07 Ball Semiconductor, Inc. System and method for performing diffusion on a three-dimensional substrate
US6780219B2 (en) * 2002-07-03 2004-08-24 Osram Sylvania Inc. Method of spheridizing silicon metal powders
DE102005032594A1 (de) * 2005-07-11 2007-01-18 Forschungszentrum Jülich GmbH Verfahren zur Herstellung eines Bead-Einkristalls
WO2008057483A2 (en) 2006-11-03 2008-05-15 Semlux Technologies, Inc. Laser conversion of high purity silicon powder to densified garnular forms
US7934921B2 (en) * 2007-10-31 2011-05-03 Hitachi Global Storage Technologies Netherlands B.V. Apparatus, system, and method for guided growth of patterned media using monodisperse nanospheres

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2639841C3 (de) * 1976-09-03 1980-10-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Solarzelle und Verfahren zu ihrer Herstellung
US5336360A (en) * 1986-08-18 1994-08-09 Clemson University Laser assisted fiber growth
FR2658839B1 (fr) * 1990-02-23 1997-06-20 Thomson Csf Procede de croissance controlee de cristaux aciculaires et application a la realisation de microcathodes a pointes.
JP2821061B2 (ja) * 1992-05-22 1998-11-05 電気化学工業株式会社 単結晶の製造方法
JP2787535B2 (ja) * 1993-10-18 1998-08-20 仗祐 中田 球状結晶の製造方法および球状結晶アレイ
US5431127A (en) * 1994-10-14 1995-07-11 Texas Instruments Incorporated Process for producing semiconductor spheres
JP2642906B2 (ja) * 1995-05-19 1997-08-20 工業技術院長 スピネル単結晶繊維の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101805925B (zh) * 2010-02-20 2012-08-15 西安隆基硅材料股份有限公司 太阳能电池用掺镓铟单晶硅材料及其制备方法
CN114920251A (zh) * 2022-04-29 2022-08-19 江西广源化工有限责任公司 一种高球度硅微粉及其制备方法
CN114920249A (zh) * 2022-04-29 2022-08-19 江西广源化工有限责任公司 一种失重射流球形微粉制造设备
CN114920249B (zh) * 2022-04-29 2023-12-19 江西广源化工有限责任公司 一种失重射流球形微粉制造设备
CN115044963A (zh) * 2022-06-06 2022-09-13 中国科学院电工研究所 一种电子束加热制备球状金属单晶的装置及方法
CN115044963B (zh) * 2022-06-06 2025-09-19 中国科学院电工研究所 一种电子束加热制备球状金属单晶的装置及方法

Also Published As

Publication number Publication date
TW285749B (enExample) 1996-09-11
JP2787550B2 (ja) 1998-08-20
AU3192895A (en) 1996-06-06
CA2176606A1 (en) 1996-05-11
WO1996015298A1 (en) 1996-05-23
EP0738791A1 (en) 1996-10-23
JPH08133899A (ja) 1996-05-28
US5817173A (en) 1998-10-06
EP0738791A4 (en) 1998-04-01
AU687601B2 (en) 1998-02-26
KR960706188A (ko) 1996-11-08

Similar Documents

Publication Publication Date Title
CN1138355A (zh) 球状晶体的制造方法
CN1706993A (zh) 球形半导体颗粒的批量生产方法和设备
CN1357927A (zh) 光电设备和用于大量制作球形半导体颗粒的批量生产设备
CN1144296C (zh) 太阳能电池的制造工艺
CN1192055A (zh) 制造半导体构件的方法和制造太阳电池的方法
CN101057317A (zh) 激光加工方法和半导体芯片
CN1495848A (zh) 制造晶体半导体材料的方法和制作半导体器件的方法
CN104109906A (zh) 单晶制造装置、单晶的制造方法及单晶
WO2018003386A1 (ja) 単結晶製造装置および単結晶製造方法
CN1265423C (zh) 半导体器件及其制造方法
JP2003292398A (ja) 単結晶シリコンウェファの製造方法
JP2787535B2 (ja) 球状結晶の製造方法および球状結晶アレイ
JP2006273684A (ja) Ｉｉｉ族酸化物系単結晶の製造方法
JP2002029882A (ja) 結晶成長自由表面を有する結晶製品及びその製造方法
JP4051234B2 (ja) 粒状シリコンの製造方法
Depuydt et al. Germanium materials
WO2008035793A1 (en) Method for fabricating crystalline silicon grains
JP3548560B2 (ja) 熱電モジュール
CN1234911A (zh) 球状半导体器件及其制造方法和球状半导体器件材料
JP2009256177A (ja) 単結晶シリコン粒子およびその製造方法
US4465545A (en) Method of growing single crystal cadmium telluride
JP2009167052A (ja) 単結晶シリコン粒子の製造方法
JP2009292652A (ja) 結晶シリコン粒子の製造方法
JP2008085056A (ja) 結晶粒子の製造方法
JP2007194513A (ja) 結晶半導体粒子の製造方法及び光電変換装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C01 Deemed withdrawal of patent application (patent law 1993)
WD01 Invention patent application deemed withdrawn after publication