CN113832544B - β-Ga2O3系单晶膜的生长方法和晶体层叠结构体 - Google Patents

β-Ga2O3系单晶膜的生长方法和晶体层叠结构体 Download PDF

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CN113832544B
CN113832544B CN202111128251.4A CN202111128251A CN113832544B CN 113832544 B CN113832544 B CN 113832544B CN 202111128251 A CN202111128251 A CN 202111128251A CN 113832544 B CN113832544 B CN 113832544B
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gas
single crystal
crystal film
substrate
film
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CN113832544A (zh
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后藤健
佐佐木公平
绞缬明伯
熊谷义直
村上尚
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Tamura Corp
Tokyo University of Agriculture and Technology NUC
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Tamura Corp
Tokyo University of Agriculture and Technology NUC
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
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CN202111128251.4A 2013-09-30 2014-09-18 β-Ga2O3系单晶膜的生长方法和晶体层叠结构体 Active CN113832544B (zh)

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JP2013-203198 2013-09-30
JP2013203198 2013-09-30
JP2014088589A JP5984069B2 (ja) 2013-09-30 2014-04-22 β−Ｇａ２Ｏ３系単結晶膜の成長方法、及び結晶積層構造体
JP2014-088589 2014-04-22
PCT/JP2014/074659 WO2015046006A1 (ja) 2013-09-30 2014-09-18 β－Ｇａ２Ｏ３系単結晶膜の成長方法、及び結晶積層構造体
CN201480053760.7A CN105992841B (zh) 2013-09-30 2014-09-18 β-Ga2O3系单晶膜的生长方法和晶体层叠结构体
CN202111128251.4A CN113832544B (zh) 2013-09-30 2014-09-18 β-Ga2O3系单晶膜的生长方法和晶体层叠结构体

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JP6253150B2 (ja) * 2014-05-09 2017-12-27 株式会社タムラ製作所 エピタキシャルウエハ及びその製造方法
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JP7158627B1 (ja) * 2021-09-03 2022-10-21 三菱電機株式会社 結晶積層構造体、半導体装置、及び、結晶積層構造体の製造方法
KR102546042B1 (ko) * 2021-12-22 2023-06-22 주식회사루미지엔테크 HVPE법에 따른 Ga2O3 결정막 증착방법, 증착장치 및 이를 사용한 Ga2O3 결정막 증착 기판
CN114059173B (zh) * 2022-01-17 2022-04-01 浙江大学杭州国际科创中心 一种制备氧化镓料棒的装置及方法
CN114823287B (zh) * 2022-04-29 2024-10-18 杭州富加镓业科技有限公司 一种在非故意掺杂衬底上制备同质外延氧化镓薄膜的方法及分子束外延设备
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