CN113811400B - 使用等离子体和蒸汽的干式清洁设备 - Google Patents

使用等离子体和蒸汽的干式清洁设备 Download PDF

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Publication number
CN113811400B
CN113811400B CN202080034382.3A CN202080034382A CN113811400B CN 113811400 B CN113811400 B CN 113811400B CN 202080034382 A CN202080034382 A CN 202080034382A CN 113811400 B CN113811400 B CN 113811400B
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CN
China
Prior art keywords
chamber
surface portion
valve
supply port
steam
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CN202080034382.3A
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English (en)
Chinese (zh)
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CN113811400A (zh
Inventor
李佶洸
林斗镐
吴相龙
朴在阳
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Aisi Co ltd
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Aisi Co ltd
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Publication of CN113811400A publication Critical patent/CN113811400A/zh
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00Accessories or details of general applicability for machines or apparatus for cleaning
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02Cleaning by the force of jets, e.g. blowing-out cavities
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046Dry cleaning only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
CN202080034382.3A 2019-05-17 2020-04-24 使用等离子体和蒸汽的干式清洁设备 Active CN113811400B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020190057817A KR102179717B1 (ko) 2019-05-17 2019-05-17 플라즈마와 증기를 이용한 건식 세정 장치
KR10-2019-0057817 2019-05-17
PCT/KR2020/005422 WO2020235822A1 (ko) 2019-05-17 2020-04-24 플라즈마와 증기를 이용한 건식 세정 장치

Publications (2)

Publication Number Publication Date
CN113811400A CN113811400A (zh) 2021-12-17
CN113811400B true CN113811400B (zh) 2023-07-25

Family

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CN202080034382.3A Active CN113811400B (zh) 2019-05-17 2020-04-24 使用等离子体和蒸汽的干式清洁设备

Country Status (4)

Country Link
KR (1) KR102179717B1 (ko)
CN (1) CN113811400B (ko)
TW (1) TWI748453B (ko)
WO (1) WO2020235822A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230151810A (ko) * 2022-04-26 2023-11-02 주식회사 원익아이피에스 기판 처리 장치 및 기판 처리 방법
KR102667888B1 (ko) 2022-05-04 2024-05-22 엘에스이 주식회사 증기 공급 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080019141A (ko) * 2006-08-25 2008-03-03 삼성전자주식회사 화학기상증착설비
KR20190032030A (ko) * 2017-09-19 2019-03-27 무진전자 주식회사 기판 처리 방법 및 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100696378B1 (ko) * 2005-04-13 2007-03-19 삼성전자주식회사 반도체 기판을 세정하는 장치 및 방법
KR20070044081A (ko) * 2005-10-24 2007-04-27 삼성전자주식회사 반도체 기판의 처리 방법
KR100784661B1 (ko) 2006-12-26 2007-12-12 피에스케이 주식회사 반도체 소자의 제조방법
JP5016351B2 (ja) * 2007-03-29 2012-09-05 東京エレクトロン株式会社 基板処理システム及び基板洗浄装置
KR100904719B1 (ko) * 2007-04-03 2009-06-29 주식회사 소로나 박막 코팅 장치 및 방법
JP5374039B2 (ja) 2007-12-27 2013-12-25 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
JP2010225847A (ja) * 2009-03-24 2010-10-07 Tokyo Electron Ltd 真空処理装置,減圧処理方法,基板処理方法
JP5707144B2 (ja) * 2011-01-18 2015-04-22 東京エレクトロン株式会社 基板処理装置のドライクリーニング方法及び金属膜の除去方法
KR101314162B1 (ko) * 2012-02-16 2013-10-04 주식회사 다원시스 복합 세정장치 및 방법
US9299557B2 (en) * 2014-03-19 2016-03-29 Asm Ip Holding B.V. Plasma pre-clean module and process
JP2015211156A (ja) * 2014-04-28 2015-11-24 東京エレクトロン株式会社 ドライクリーニング方法及びプラズマ処理装置
US10358715B2 (en) * 2016-06-03 2019-07-23 Applied Materials, Inc. Integrated cluster tool for selective area deposition
KR102003361B1 (ko) * 2017-09-19 2019-07-24 무진전자 주식회사 인시튜 건식 세정 방법 및 장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080019141A (ko) * 2006-08-25 2008-03-03 삼성전자주식회사 화학기상증착설비
KR20190032030A (ko) * 2017-09-19 2019-03-27 무진전자 주식회사 기판 처리 방법 및 장치

Also Published As

Publication number Publication date
KR102179717B1 (ko) 2020-11-17
CN113811400A (zh) 2021-12-17
TWI748453B (zh) 2021-12-01
WO2020235822A1 (ko) 2020-11-26
TW202109705A (zh) 2021-03-01

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Effective date of registration: 20220601

Address after: Gyeonggi Do, South Korea

Applicant after: Aisi Co.,Ltd.

Address before: Seoul City, Korea

Applicant before: MUJIN ELECTRONICS Co.,Ltd.

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