CN113692638A - 量子点发光器件及其制备方法、量子点显示面板的制备方法 - Google Patents

量子点发光器件及其制备方法、量子点显示面板的制备方法 Download PDF

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CN113692638A
CN113692638A CN202080000298.XA CN202080000298A CN113692638A CN 113692638 A CN113692638 A CN 113692638A CN 202080000298 A CN202080000298 A CN 202080000298A CN 113692638 A CN113692638 A CN 113692638A
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layer
quantum dot
pattern
sacrificial layer
photoresist
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梅文海
张振琦
张爱迪
张晓远
王好伟
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BOE Technology Group Co Ltd
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    • C09K11/881—Chalcogenides
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching

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Abstract

本公开的实施例提供一种量子点发光器件及其制备方法以及量子点显示面板的制备方法，该量子点发光器件的制备方法，包括：提供衬底基板(101)；在衬底基板(101)上形成第一电极(102)；在第一电极(102)上形成第一功能层(103)；在第一功能层(103)上依次形成第一牺牲层(104)和第一光刻胶层(105)；对第一光刻胶层(105)进行构图工艺形成第一光刻胶图案(1051)；以第一光刻胶图案(1051)为掩膜对第一牺牲层(104)进行构图工艺以形成第一牺牲层图案(1041)，其中，第一功能层(103)包括第一部分(1031)和第二部分(1032)，第一部分(1031)上依次堆叠第一牺牲层图案(1041)和第一光刻胶图案(1051)，第二部分(1032)被第一牺牲层图案(1041)和第一光刻胶图案(1051)露出；在第一光刻胶图案(1051)和第一功能层(103)的第二部分(1032)上形成第一量子点材料层(106)；剥离第一牺牲层图案(1041)以去除第一牺牲层图案(1041)以及位于其上的第一光刻胶图案(1051)和第一量子点材料层(106)，并保留位于第一功能层(103)的第二部分(1032)上的第一量子点材料层(106)以形成第一量子点发光层(106’)；在第一量子点发光层(106’)上形成第二电极(108)。

Description

PCT国内申请，说明书已公开。

Claims (18)

  1. PCT国内申请，权利要求书已公开。
CN202080000298.XA 2020-03-18 2020-03-18 量子点发光器件及其制备方法、量子点显示面板的制备方法 Pending CN113692638A (zh)

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JP2005183782A (ja) * 2003-12-22 2005-07-07 Sony Corp リフトオフ法に基づくパターン形成方法
KR100736521B1 (ko) 2004-06-09 2007-07-06 삼성전자주식회사 나노 결정 전기발광 소자 및 그의 제조방법
JP2009087760A (ja) * 2007-09-28 2009-04-23 Dainippon Printing Co Ltd エレクトロルミネッセンス素子の製造方法
KR101108162B1 (ko) * 2010-01-11 2012-01-31 서울대학교산학협력단 고해상도 유기 박막 패턴 형성 방법
JP2013056421A (ja) 2011-09-07 2013-03-28 Murata Mfg Co Ltd インク供給制御装置、該インク供給制御装置を備えた印刷装置、及びインク供給制御方法
CN102709487B (zh) * 2011-10-17 2015-06-17 京东方科技集团股份有限公司 一种有机发光显示面板及其制造方法
KR102401987B1 (ko) * 2014-08-01 2022-05-25 올싸거널 인코포레이티드 유기 전자 장치의 포토리소그래피 패터닝
CN107732031A (zh) * 2017-09-29 2018-02-23 京东方科技集团股份有限公司 有机发光显示面板的制备方法及有机发光显示面板
CN109935725B (zh) * 2017-12-15 2020-08-14 Tcl科技集团股份有限公司 量子点发光二极管及其制备方法和应用
CN110746957B (zh) * 2018-07-24 2021-02-05 Tcl科技集团股份有限公司 基于量子点的长余辉复合材料及其制备方法和应用
CN112420968B (zh) 2019-08-21 2023-02-03 咸阳彩虹光电科技有限公司 一种显示面板的制造方法、显示面板及显示装置
CN110628417A (zh) 2019-09-27 2019-12-31 京东方科技集团股份有限公司 一种量子点配体及其制备方法、以及量子点膜及其制备方法

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EP4086937A1 (en) 2022-11-09
JP7425199B2 (ja) 2024-01-30
JP2023527484A (ja) 2023-06-29
US20220310983A1 (en) 2022-09-29
EP4086937A4 (en) 2022-12-28
WO2021184256A1 (zh) 2021-09-23
KR20220154658A (ko) 2022-11-22

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