CN113506812A - 光检测设备和电子装置 - Google Patents

光检测设备和电子装置 Download PDF

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Publication number
CN113506812A
CN113506812A CN202110590081.5A CN202110590081A CN113506812A CN 113506812 A CN113506812 A CN 113506812A CN 202110590081 A CN202110590081 A CN 202110590081A CN 113506812 A CN113506812 A CN 113506812A
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negative
electrode
positive
wiring
negative electrode
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Pending
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CN202110590081.5A
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English (en)
Chinese (zh)
Inventor
小林贤司
若野寿史
大竹悠介
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Publication of CN113506812A publication Critical patent/CN113506812A/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14636Interconnect structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5225Shielding layers formed together with wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14634Assemblies, i.e. Hybrid structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1464Back illuminated imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14645Colour imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
CN202110590081.5A 2017-08-04 2018-07-25 光检测设备和电子装置 Pending CN113506812A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-151980 2017-08-04
JP2017151980A JP6932580B2 (ja) 2017-08-04 2017-08-04 固体撮像素子
CN201880003275.7A CN110168733B (zh) 2017-08-04 2018-07-25 固体摄像器件

Related Parent Applications (1)

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CN201880003275.7A Division CN110168733B (zh) 2017-08-04 2018-07-25 固体摄像器件

Publications (1)

Publication Number Publication Date
CN113506812A true CN113506812A (zh) 2021-10-15

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Application Number Title Priority Date Filing Date
CN201880003275.7A Active CN110168733B (zh) 2017-08-04 2018-07-25 固体摄像器件
CN202110590081.5A Pending CN113506812A (zh) 2017-08-04 2018-07-25 光检测设备和电子装置
CN202110590825.3A Pending CN113506813A (zh) 2017-08-04 2018-07-25 光检测设备和电子装置

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CN201880003275.7A Active CN110168733B (zh) 2017-08-04 2018-07-25 固体摄像器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202110590825.3A Pending CN113506813A (zh) 2017-08-04 2018-07-25 光检测设备和电子装置

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US (4) US10680028B2 (de)
EP (2) EP3507836B1 (de)
JP (2) JP6932580B2 (de)
KR (3) KR102551408B1 (de)
CN (3) CN110168733B (de)
DE (1) DE112018003978T5 (de)
TW (1) TWI779062B (de)
WO (1) WO2019026719A1 (de)

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Also Published As

Publication number Publication date
JP2021192436A (ja) 2021-12-16
US11699716B2 (en) 2023-07-11
EP3507836B1 (de) 2024-01-03
KR20240036139A (ko) 2024-03-19
JP2019033136A (ja) 2019-02-28
US20200203415A1 (en) 2020-06-25
KR20200033789A (ko) 2020-03-30
EP4254502A3 (de) 2024-01-10
US11222916B2 (en) 2022-01-11
CN113506813A (zh) 2021-10-15
CN110168733B (zh) 2021-05-14
EP4254502A2 (de) 2023-10-04
KR102551408B1 (ko) 2023-07-06
DE112018003978T5 (de) 2020-04-16
US20230246055A1 (en) 2023-08-03
KR20230085226A (ko) 2023-06-13
CN110168733A (zh) 2019-08-23
US20190181177A1 (en) 2019-06-13
KR102646942B1 (ko) 2024-03-13
US10680028B2 (en) 2020-06-09
JP6932580B2 (ja) 2021-09-08
US20220077218A1 (en) 2022-03-10
JP7418934B2 (ja) 2024-01-22
TW201919217A (zh) 2019-05-16
TWI779062B (zh) 2022-10-01
EP3507836A1 (de) 2019-07-10
WO2019026719A1 (en) 2019-02-07

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