CN113506812A - 光检测设备和电子装置 - Google Patents
光检测设备和电子装置 Download PDFInfo
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- CN113506812A CN113506812A CN202110590081.5A CN202110590081A CN113506812A CN 113506812 A CN113506812 A CN 113506812A CN 202110590081 A CN202110590081 A CN 202110590081A CN 113506812 A CN113506812 A CN 113506812A
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- 238000001514 detection method Methods 0.000 title claims abstract description 37
- 238000002955 isolation Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
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- 238000003384 imaging method Methods 0.000 description 35
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5225—Shielding layers formed together with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-151980 | 2017-08-04 | ||
JP2017151980A JP6932580B2 (ja) | 2017-08-04 | 2017-08-04 | 固体撮像素子 |
CN201880003275.7A CN110168733B (zh) | 2017-08-04 | 2018-07-25 | 固体摄像器件 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201880003275.7A Division CN110168733B (zh) | 2017-08-04 | 2018-07-25 | 固体摄像器件 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113506812A true CN113506812A (zh) | 2021-10-15 |
Family
ID=63244929
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201880003275.7A Active CN110168733B (zh) | 2017-08-04 | 2018-07-25 | 固体摄像器件 |
CN202110590081.5A Pending CN113506812A (zh) | 2017-08-04 | 2018-07-25 | 光检测设备和电子装置 |
CN202110590825.3A Pending CN113506813A (zh) | 2017-08-04 | 2018-07-25 | 光检测设备和电子装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201880003275.7A Active CN110168733B (zh) | 2017-08-04 | 2018-07-25 | 固体摄像器件 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110590825.3A Pending CN113506813A (zh) | 2017-08-04 | 2018-07-25 | 光检测设备和电子装置 |
Country Status (8)
Country | Link |
---|---|
US (4) | US10680028B2 (de) |
EP (2) | EP3507836B1 (de) |
JP (2) | JP6932580B2 (de) |
KR (3) | KR102551408B1 (de) |
CN (3) | CN110168733B (de) |
DE (1) | DE112018003978T5 (de) |
TW (1) | TWI779062B (de) |
WO (1) | WO2019026719A1 (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7055544B2 (ja) | 2016-11-29 | 2022-04-18 | ソニーセミコンダクタソリューションズ株式会社 | センサチップおよび電子機器 |
JP6932580B2 (ja) | 2017-08-04 | 2021-09-08 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
EP3442032B1 (de) * | 2017-08-10 | 2020-04-01 | ams AG | Einzelphoton-avalanche-diode und anordnung von einzelphoton-avalanche-dioden |
JP6878338B2 (ja) * | 2018-03-14 | 2021-05-26 | 株式会社東芝 | 受光装置および受光装置の製造方法 |
DE102018120141A1 (de) * | 2018-08-17 | 2020-02-20 | Sick Ag | Erfassen von Licht mit einer Vielzahl von Lawinenphotodiodenelementen |
US11424282B2 (en) * | 2019-02-25 | 2022-08-23 | Canon Kabushiki Kaisha | Semiconductor apparatus and equipment |
CN117116954A (zh) | 2019-03-29 | 2023-11-24 | 索尼半导体解决方案公司 | 固态摄像装置和电子设备 |
JP7445397B2 (ja) * | 2019-07-31 | 2024-03-07 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および電子機器 |
JP2021027277A (ja) * | 2019-08-08 | 2021-02-22 | キヤノン株式会社 | 光電変換装置、光電変換システム |
JP7362352B2 (ja) * | 2019-08-23 | 2023-10-17 | キヤノン株式会社 | 光電変換装置、光電変換システム、および移動体 |
US11275186B2 (en) * | 2019-08-26 | 2022-03-15 | Semiconductor Components Industries, Llc | Imaging devices with capacitively coupled single-photon avalanche diodes |
JP2021068811A (ja) * | 2019-10-24 | 2021-04-30 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及び電子機器 |
TW202131505A (zh) * | 2019-12-25 | 2021-08-16 | 日商索尼半導體解決方案公司 | 光檢測器 |
WO2021161687A1 (ja) * | 2020-02-10 | 2021-08-19 | ソニーセミコンダクタソリューションズ株式会社 | センサ装置、測距装置 |
CN115461868A (zh) * | 2020-03-20 | 2022-12-09 | 灵明光子有限公司 | 用于直接飞行时间传感器的spad像素电路及其方法 |
WO2021199680A1 (ja) * | 2020-03-31 | 2021-10-07 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および電子機器 |
CN111968999A (zh) * | 2020-09-08 | 2020-11-20 | 上海大芯半导体有限公司 | 堆栈式背照单光子雪崩二极管图像传感器 |
JP2022047438A (ja) * | 2020-09-11 | 2022-03-24 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及び電子機器 |
US20240012150A1 (en) * | 2020-11-17 | 2024-01-11 | Sony Semiconductor Solutions Corporation | Light reception device and distance measuring device |
US20240006445A1 (en) * | 2020-12-02 | 2024-01-04 | Sony Semiconductor Solutions Corporation | Light receiving element, photodetector, and distance measurement system |
JP2022112594A (ja) * | 2021-01-22 | 2022-08-03 | キヤノン株式会社 | 光電変換装置、光検出システム |
JP2022113371A (ja) * | 2021-01-25 | 2022-08-04 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
JP2022114788A (ja) * | 2021-01-27 | 2022-08-08 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、受光素子の製造方法及び測距システム |
JP7487131B2 (ja) | 2021-03-18 | 2024-05-20 | 株式会社東芝 | 半導体装置 |
JP2022148028A (ja) * | 2021-03-24 | 2022-10-06 | ソニーセミコンダクタソリューションズ株式会社 | センサ素子および測距システム |
JP2022176838A (ja) * | 2021-05-17 | 2022-11-30 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及び電子機器 |
KR20220156319A (ko) | 2021-05-18 | 2022-11-25 | 남도금형(주) | 전기자동차용 배터리 케이스 |
US20230065063A1 (en) * | 2021-08-24 | 2023-03-02 | Globalfoundries Singapore Pte. Ltd. | Single-photon avalanche diodes with deep trench isolation |
JP2023038415A (ja) * | 2021-09-07 | 2023-03-17 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
JP2023045837A (ja) * | 2021-09-22 | 2023-04-03 | キヤノン株式会社 | 光電変換装置 |
JP7467401B2 (ja) * | 2021-09-22 | 2024-04-15 | キヤノン株式会社 | 光電変換装置 |
JP2023154356A (ja) * | 2022-04-06 | 2023-10-19 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置および測距装置ならびに撮像装置 |
US11967664B2 (en) * | 2022-04-20 | 2024-04-23 | Globalfoundries Singapore Pte. Ltd. | Photodiodes with serpentine shaped electrical junction |
GB202207847D0 (en) * | 2022-05-27 | 2022-07-13 | Ams Osram Ag | Single photon avalanche diode |
JP2023176969A (ja) * | 2022-06-01 | 2023-12-13 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置および測距装置 |
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CN101379615A (zh) * | 2006-02-01 | 2009-03-04 | 皇家飞利浦电子股份有限公司 | 盖革式雪崩光电二极管 |
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CN105518862A (zh) * | 2013-09-25 | 2016-04-20 | 索尼公司 | 固态成像器件、固态成像器件的驱动方法及电子装置 |
CN105684150A (zh) * | 2013-11-05 | 2016-06-15 | 浜松光子学株式会社 | 线性图像传感器 |
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2017
- 2017-08-04 JP JP2017151980A patent/JP6932580B2/ja active Active
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2018
- 2018-07-09 TW TW107123675A patent/TWI779062B/zh active
- 2018-07-25 KR KR1020197001043A patent/KR102551408B1/ko active Application Filing
- 2018-07-25 KR KR1020247007690A patent/KR20240036139A/ko not_active Application Discontinuation
- 2018-07-25 EP EP18755930.7A patent/EP3507836B1/de active Active
- 2018-07-25 WO PCT/JP2018/027845 patent/WO2019026719A1/en unknown
- 2018-07-25 EP EP23188095.6A patent/EP4254502A3/de active Pending
- 2018-07-25 KR KR1020237018899A patent/KR102646942B1/ko active IP Right Grant
- 2018-07-25 US US16/326,060 patent/US10680028B2/en active Active
- 2018-07-25 CN CN201880003275.7A patent/CN110168733B/zh active Active
- 2018-07-25 DE DE112018003978.1T patent/DE112018003978T5/de active Pending
- 2018-07-25 CN CN202110590081.5A patent/CN113506812A/zh active Pending
- 2018-07-25 CN CN202110590825.3A patent/CN113506813A/zh active Pending
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2020
- 2020-02-27 US US16/803,787 patent/US11222916B2/en active Active
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2021
- 2021-08-17 JP JP2021132551A patent/JP7418934B2/ja active Active
- 2021-11-15 US US17/526,800 patent/US11699716B2/en active Active
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2023
- 2023-04-07 US US18/132,014 patent/US20230246055A1/en active Pending
Patent Citations (4)
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CN101379615A (zh) * | 2006-02-01 | 2009-03-04 | 皇家飞利浦电子股份有限公司 | 盖革式雪崩光电二极管 |
CN105009289A (zh) * | 2013-02-20 | 2015-10-28 | 浜松光子学株式会社 | 检测器、pet装置和x射线ct装置 |
CN105518862A (zh) * | 2013-09-25 | 2016-04-20 | 索尼公司 | 固态成像器件、固态成像器件的驱动方法及电子装置 |
CN105684150A (zh) * | 2013-11-05 | 2016-06-15 | 浜松光子学株式会社 | 线性图像传感器 |
Also Published As
Publication number | Publication date |
---|---|
JP2021192436A (ja) | 2021-12-16 |
US11699716B2 (en) | 2023-07-11 |
EP3507836B1 (de) | 2024-01-03 |
KR20240036139A (ko) | 2024-03-19 |
JP2019033136A (ja) | 2019-02-28 |
US20200203415A1 (en) | 2020-06-25 |
KR20200033789A (ko) | 2020-03-30 |
EP4254502A3 (de) | 2024-01-10 |
US11222916B2 (en) | 2022-01-11 |
CN113506813A (zh) | 2021-10-15 |
CN110168733B (zh) | 2021-05-14 |
EP4254502A2 (de) | 2023-10-04 |
KR102551408B1 (ko) | 2023-07-06 |
DE112018003978T5 (de) | 2020-04-16 |
US20230246055A1 (en) | 2023-08-03 |
KR20230085226A (ko) | 2023-06-13 |
CN110168733A (zh) | 2019-08-23 |
US20190181177A1 (en) | 2019-06-13 |
KR102646942B1 (ko) | 2024-03-13 |
US10680028B2 (en) | 2020-06-09 |
JP6932580B2 (ja) | 2021-09-08 |
US20220077218A1 (en) | 2022-03-10 |
JP7418934B2 (ja) | 2024-01-22 |
TW201919217A (zh) | 2019-05-16 |
TWI779062B (zh) | 2022-10-01 |
EP3507836A1 (de) | 2019-07-10 |
WO2019026719A1 (en) | 2019-02-07 |
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