CN113330141B - 沉积氮化硅的方法 - Google Patents

沉积氮化硅的方法 Download PDF

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Publication number
CN113330141B
CN113330141B CN201980089876.9A CN201980089876A CN113330141B CN 113330141 B CN113330141 B CN 113330141B CN 201980089876 A CN201980089876 A CN 201980089876A CN 113330141 B CN113330141 B CN 113330141B
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silicon nitride
nitride material
silicon
flowable
substrate
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CN113330141A (zh
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L·C·卡鲁塔拉格
M·J·萨利
P·P·杰哈
梁璟梅
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Applied Materials Inc
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Applied Materials Inc
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
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    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
CN201980089876.9A 2019-01-24 2019-11-11 沉积氮化硅的方法 Active CN113330141B (zh)

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US201962796277P 2019-01-24 2019-01-24
US62/796,277 2019-01-24
PCT/US2019/060757 WO2020154009A1 (en) 2019-01-24 2019-11-11 Methods for depositing silicon nitride

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CN113330141B true CN113330141B (zh) 2023-10-17

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US (1) US11107674B2 (https=)
JP (1) JP7431245B2 (https=)
KR (1) KR102805139B1 (https=)
CN (1) CN113330141B (https=)
SG (1) SG11202107377VA (https=)
TW (1) TWI879747B (https=)
WO (1) WO2020154009A1 (https=)

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US11114306B2 (en) * 2018-09-17 2021-09-07 Applied Materials, Inc. Methods for depositing dielectric material
KR20210094462A (ko) * 2020-01-20 2021-07-29 에이에스엠 아이피 홀딩 비.브이. 전처리를 사용하여 실리콘 질화물 층을 증착하는 방법, 상기 방법을 사용하여 형성된 구조체, 및 상기 방법을 수행하기 위한 시스템
US20240200187A1 (en) * 2022-12-06 2024-06-20 Piotech Inc. Method for forming high-quality film by cvd process
CN118186373A (zh) * 2022-12-06 2024-06-14 拓荆科技股份有限公司 通过cvd方法形成高质量膜的方法
CN115747761A (zh) * 2022-12-07 2023-03-07 拓荆科技(上海)有限公司 一种薄膜固化方法
WO2026023006A1 (ja) * 2024-07-25 2026-01-29 株式会社Kokusai Electric 基板処理装置、基板処理方法、半導体装置の製造方法およびプログラム

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