CN113227310B - 研磨用组合物 - Google Patents

研磨用组合物 Download PDF

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Publication number
CN113227310B
CN113227310B CN202080007445.6A CN202080007445A CN113227310B CN 113227310 B CN113227310 B CN 113227310B CN 202080007445 A CN202080007445 A CN 202080007445A CN 113227310 B CN113227310 B CN 113227310B
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CN
China
Prior art keywords
polishing composition
polishing
water
soluble polymer
laser mark
Prior art date
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Application number
CN202080007445.6A
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English (en)
Chinese (zh)
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CN113227310A (zh
Inventor
山崎智基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nida Dupont Co ltd
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Nida Dupont Co ltd
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Publication of CN113227310A publication Critical patent/CN113227310A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN202080007445.6A 2019-02-14 2020-02-04 研磨用组合物 Active CN113227310B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019024751A JP7222750B2 (ja) 2019-02-14 2019-02-14 研磨用組成物
JP2019-024751 2019-02-14
PCT/JP2020/004203 WO2020166438A1 (ja) 2019-02-14 2020-02-04 研磨用組成物

Publications (2)

Publication Number Publication Date
CN113227310A CN113227310A (zh) 2021-08-06
CN113227310B true CN113227310B (zh) 2022-10-28

Family

ID=72044692

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080007445.6A Active CN113227310B (zh) 2019-02-14 2020-02-04 研磨用组合物

Country Status (7)

Country Link
JP (1) JP7222750B2 (ja)
KR (1) KR20210128378A (ja)
CN (1) CN113227310B (ja)
DE (1) DE112020000827T5 (ja)
SG (1) SG11202108742VA (ja)
TW (1) TWI846818B (ja)
WO (1) WO2020166438A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024043061A1 (ja) * 2022-08-26 2024-02-29 株式会社フジミインコーポレーテッド 研磨用組成物

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1359997A (zh) * 2000-12-20 2002-07-24 拜尔公司 化学机械法抛光二氧化硅薄膜用抛光膏
CN102102008A (zh) * 2009-12-18 2011-06-22 安集微电子（上海）有限公司 一种水基玻璃磨削液及其使用方法
CN102206465A (zh) * 2010-03-31 2011-10-05 罗门哈斯电子材料Cmp控股股份有限公司 使用适合提高氧化硅的去除的抛光组合物对基片进行化学机械抛光的方法
TW201546253A (zh) * 2014-03-27 2015-12-16 Fujimi Inc 矽材料研磨用組成物
CN105315894A (zh) * 2014-06-27 2016-02-10 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光组合物和用于抛光钨的方法
TW201610129A (zh) * 2014-09-08 2016-03-16 霓塔哈斯股份有限公司 研磨用組合物
WO2016143323A1 (ja) * 2015-03-11 2016-09-15 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法
JP2017132944A (ja) * 2016-01-29 2017-08-03 株式会社フジミインコーポレーテッド 濃縮研磨用組成物の製造方法および安定化方法
CN107075347A (zh) * 2014-10-22 2017-08-18 福吉米株式会社 研磨用组合物
CN108713242A (zh) * 2016-03-01 2018-10-26 福吉米株式会社 硅基板的研磨方法及研磨用组合物套组
CN108929633A (zh) * 2017-05-25 2018-12-04 富士胶片平面解决方案有限公司 用于钴应用的化学机械抛光浆料

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1359997A (zh) * 2000-12-20 2002-07-24 拜尔公司 化学机械法抛光二氧化硅薄膜用抛光膏
CN102102008A (zh) * 2009-12-18 2011-06-22 安集微电子（上海）有限公司 一种水基玻璃磨削液及其使用方法
CN102206465A (zh) * 2010-03-31 2011-10-05 罗门哈斯电子材料Cmp控股股份有限公司 使用适合提高氧化硅的去除的抛光组合物对基片进行化学机械抛光的方法
TW201546253A (zh) * 2014-03-27 2015-12-16 Fujimi Inc 矽材料研磨用組成物
CN105315894A (zh) * 2014-06-27 2016-02-10 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光组合物和用于抛光钨的方法
WO2016039265A1 (ja) * 2014-09-08 2016-03-17 ニッタ・ハース株式会社 研磨用組成物
TW201610129A (zh) * 2014-09-08 2016-03-16 霓塔哈斯股份有限公司 研磨用組合物
CN107075347A (zh) * 2014-10-22 2017-08-18 福吉米株式会社 研磨用组合物
WO2016143323A1 (ja) * 2015-03-11 2016-09-15 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法
JP2017132944A (ja) * 2016-01-29 2017-08-03 株式会社フジミインコーポレーテッド 濃縮研磨用組成物の製造方法および安定化方法
TW201730954A (zh) * 2016-01-29 2017-09-01 Fujimi Inc 濃縮研磨用組成物之製造方法及穩定化方法
CN108713242A (zh) * 2016-03-01 2018-10-26 福吉米株式会社 硅基板的研磨方法及研磨用组合物套组
CN108929633A (zh) * 2017-05-25 2018-12-04 富士胶片平面解决方案有限公司 用于钴应用的化学机械抛光浆料

Also Published As

Publication number Publication date
JP2020132695A (ja) 2020-08-31
CN113227310A (zh) 2021-08-06
JP7222750B2 (ja) 2023-02-15
SG11202108742VA (en) 2021-09-29
TWI846818B (zh) 2024-07-01
KR20210128378A (ko) 2021-10-26
TW202035644A (zh) 2020-10-01
WO2020166438A1 (ja) 2020-08-20
DE112020000827T5 (de) 2021-11-04

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