CN1132016C - 用于单电子和核的自旋测量的电子设备 - Google Patents

用于单电子和核的自旋测量的电子设备 Download PDF

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Publication number
CN1132016C
CN1132016C CN988092409A CN98809240A CN1132016C CN 1132016 C CN1132016 C CN 1132016C CN 988092409 A CN988092409 A CN 988092409A CN 98809240 A CN98809240 A CN 98809240A CN 1132016 C CN1132016 C CN 1132016C
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spin
electronics
electron
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donor atom
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CN1270674A (zh
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B·卡尼
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Qucor Pty Ltd
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Unisearch Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/402—Single electron transistors; Coulomb blockade transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 1D charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/383—Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects
    • H10D48/3835—Semiconductor qubit devices comprising a plurality of quantum mechanically interacting semiconductor quantum dots, e.g. Loss-DiVincenzo spin qubits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933—Spintronics or quantum computing

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Data Mining & Analysis (AREA)
  • Software Systems (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Mathematical Analysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computational Mathematics (AREA)
  • Artificial Intelligence (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Hall/Mr Elements (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN988092409A 1997-09-17 1998-09-17 用于单电子和核的自旋测量的电子设备 Expired - Fee Related CN1132016C (zh)

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AUPO9268A AUPO926897A0 (en) 1997-09-17 1997-09-17 Quantum computer
AUPO9268 1997-09-17

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CN1270674A CN1270674A (zh) 2000-10-18
CN1132016C true CN1132016C (zh) 2003-12-24

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CNB988111659A Expired - Fee Related CN1135700C (zh) 1997-09-17 1998-09-17 量子计算机、初始化方法及测试核自旋的方法
CN988092409A Expired - Fee Related CN1132016C (zh) 1997-09-17 1998-09-17 用于单电子和核的自旋测量的电子设备

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JP (2) JP4819994B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (2) KR20010030601A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (2) CN1135700C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AUPO926897A0 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (2) CA2304045A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
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IN (1) IN192584B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
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WO (2) WO1999014614A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ZA (2) ZA988528B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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KR20010030600A (ko) 2001-04-16
IL135062A0 (en) 2001-05-20
US6472681B1 (en) 2002-10-29
ZA988528B (en) 1999-03-18
CN1278967A (zh) 2001-01-03
JP2001516962A (ja) 2001-10-02
IL134920A (en) 2003-11-23
AUPO926897A0 (en) 1997-10-09
EP1025449A1 (en) 2000-08-09
JP2001516974A (ja) 2001-10-02
WO1999014614A1 (en) 1999-03-25
US6369404B1 (en) 2002-04-09
CN1135700C (zh) 2004-01-21
KR20010030601A (ko) 2001-04-16
TW423046B (en) 2001-02-21
TW423028B (en) 2001-02-21
CN1270674A (zh) 2000-10-18
WO1999014858A1 (en) 1999-03-25
JP4819994B2 (ja) 2011-11-24
JP4819993B2 (ja) 2011-11-24
EP1025449A4 (en) 2003-04-02
EP1016216A4 (en) 2002-05-08
CA2304045A1 (en) 1999-03-25
EP1016216A1 (en) 2000-07-05
ZA988530B (en) 1999-03-18
IN192584B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2004-05-08
CA2304185A1 (en) 1999-03-25
IL134920A0 (en) 2001-05-20

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