CN113192899A - 一种背面预蚀的封装结构的封装工艺 - Google Patents
一种背面预蚀的封装结构的封装工艺 Download PDFInfo
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Abstract
本发明涉及一种背面预蚀的封装结构的封装工艺,本发明在金属基板的正面和背面同时进行化学蚀刻,背面位置可与正面蚀刻位置错开,背面蚀刻形状与尺寸不受限制,因此可以根据产品需要在背面蚀刻出固定的形状和深度,可根据需求定制,解决了目前芯片尺寸受限的难题,正面可贴装较大尺寸芯片;本发明的背面预蚀提高了蚀刻精度,减少后续的蚀刻时间及难度,提高了封装效率,同时减少废铜的排放,保护环境的同时节省能源。
Description
技术领域
本发明涉及一种背面预蚀的封装结构的封装工艺,属于半导体封装技术领域。
背景技术
平面凸点式封装FBP(Flat Bump Package)是一种新型的封装形式,它是针对QFN(Quad Flat No-lead)在封装工艺中一些无法根本解决的问题而重新选择的设计方案。目前FBP封装工艺为:在金属基板的正面蚀刻后再进行背面蚀刻,背面蚀刻的形状受正面形状的限制,后续在管脚镀锡时,由于锡具有聚力,可能导致整个产品偏离,因此外管脚一般需要设置成统一尺寸,才可使产品保持平衡,因此现有的引线框无法装尺寸较大的芯片,导致现有的引线框的芯片尺寸受到限制。
现有的工艺还存在以下问题:多次化学蚀刻带来环境污染问题,封装效率低,均需要新的封装工艺解决以上问题。
发明内容
本发明所要解决的技术问题是针对上述现有技术提供一种背面预蚀的封装结构的封装工艺,背面蚀刻固定的形状和深度,减少后续蚀刻时间,减少废铜排放。
本发明解决上述问题所采用的技术方案为:一种背面预蚀的封装结构的封装工艺,包括如下步骤:
步骤一、取金属基板;
步骤二、金属基板表面预镀铜层;
步骤三、光刻作业
在步骤二的金属基板正面及背面贴覆或印刷可进行曝光显影的光阻材料,并利用曝光显影设备对金属基板表面的光阻材料进行曝光、显影与去除部分光阻材料;
步骤四、化学蚀刻
对步骤三中金属基板的正面和背面完成曝光显影的区域进行化学蚀刻,正面和背面同时进行蚀刻,背面按照产品需求蚀刻出固定的形状和深度;
步骤五、电镀金属线路层
在步骤四中化学蚀刻后的金属基板的正面与管脚相对应的位置电镀一层金属线路层,形成相应的基岛和引脚;
步骤六、装片
在步骤五形成的基岛正面植入芯片,在基岛正面涂覆导电或是不导电的粘结物质后将芯片与基岛接合,在芯片正面与引脚正面之间进行键合金属线作业;
步骤七、塑封
在步骤六中的装有芯片的金属基板的一面采用塑封料进行塑封;
步骤八、背面蚀刻
在步骤七中塑封后的金属基板的背面进行化学蚀刻,把除了引脚外多余的金属蚀刻掉;
步骤九、电镀金属层
在经过步骤八的背面蚀刻后的含有外管脚的金属基板的背面电镀金属层;
步骤十、切割成品。
一种背面预蚀的封装结构的封装工艺,在步骤八和步骤九之间增加一个步骤:在经过步骤八背面蚀刻的金属基板的背面涂覆一层绝缘层。
一种背面预蚀的封装结构的封装工艺,步骤二中的铜层厚度在2~10微米。
一种背面预蚀的封装结构的封装工艺,步骤五中的金属线路层材料可以是铜、铝、镍、银、金、铜银、镍金、镍钯金,可以导电的金属物质都可以使用,并不局限铜、铝、镍、银、金、铜银、镍金、镍钯金等金属材料,电镀方式可以是化学沉积或是电解电镀方式。
一种背面预蚀的封装结构的封装工艺,步骤七中采用的塑封方式可以采用模具灌胶方式、喷涂设备喷涂方式或是用贴膜方式;所述塑封料可以采用有填料物质或是无填料物质的环氧树脂。
一种背面预蚀的封装结构的封装工艺,步骤九中的金属线路层材料可以是锡。
与现有技术相比,本发明的优点在于:
(1)本发明在金属基板的正面和背面同时进行化学蚀刻,背面位置可与正面蚀刻位置错开,背面蚀刻形状与尺寸不受限制,因此可以根据产品需要在背面蚀刻出固定的形状和深度,可根据需求定制,解决了目前芯片尺寸受限的难题,正面可贴装较大尺寸芯片;
(2)本发明的背面预蚀提高了蚀刻精度,减少后续的蚀刻时间及难度,提高了封装效率,同时减少废铜的排放,保护环境的同时节省能源。
附图说明
图1~图10为本发明实施例1的各工序流程图示意图。
图11为本发明实施例1的封装结构的结构示意图。
图12~22为本发明实施例2的各工序流程图示意图。
图23为本发明实施例2的封装结构的结构示意图。
其中:
基岛1
引脚2
芯片3
金属线4
塑封料5。
具体实施方式
为更好地理解本发明的技术方案,以下将结合相关图示作详细说明。应理解,以下具体实施例并非用以限制本发明的技术方案的具体实施态样,其仅为本发明技术方案可采用的实施态样。需先说明,本文关于各组件位置关系的表述,如A部件位于B部件上方,其系基于图示中各组件相对位置的表述,并非用以限制各组件的实际位置关系。以下结合附图实施例对本发明作进一步详细描述。
实施例1:
参见图1~图10,本实施例中的一种背面预蚀的封装结构的封装工艺,其封装工艺方法包括如下步骤:
步骤一、取金属基板
参见图1,取一片厚度合适的金属基板,此板材使用的目的是为线路制作及线路层结构提供支撑,此板材的材质主要以金属材料为主,而金属材料的材质可以是铜材、铁材、不锈钢材或其它可导电功能的金属物质;
步骤二、金属基板表面预镀铜层
参见图2,在金属基板表面预镀铜层,铜层厚度在2~10微米,制备方式可以是化学沉积、电沉积或者气相沉积,为了之后电镀工序的导电性;
步骤三、光刻作业
参见图3,在预镀铜层的金属基板正面及背面贴覆或印刷可进行曝光显影的光阻材料,以保护后续电镀金属层工艺作业,并利用曝光显影设备对金属基板表面的光阻材料进行曝光、显影与去除部分光阻材料,以露出金属基板表面需要进行金属外引脚电镀的图形区域,光阻材料可以是光阻膜,也可以是光刻胶;
步骤四、化学蚀刻
参见图4,对步骤三中金属基板的正面和背面完成曝光显影的区域进行化学蚀刻,正面和背面同时进行蚀刻,背面按照产品需求蚀刻出固定的形状和深度;
步骤五、电镀金属线路层
参见图5,在步骤四中化学蚀刻后的金属基板的正面与管脚相对应的位置电镀一层金属线路层,形成相应的基岛1和引脚2,金属线路层材料可以是铜、铝、镍、银、金、铜银、镍金、镍钯金(通常5~20微米,可以根据不同特性变换电镀的厚度)等材料,当然其它可以导电的金属物质都可以使用,并不局限铜、铝、镍、银、金、铜银、镍金、镍钯金等金属材料,电镀方式可以是化学沉积或是电解电镀方式;
步骤六、装片
参见图6,在步骤五形成的基岛1正面植入芯片3,在基岛1正面涂覆导电或是不导电的粘结物质后将芯片3与基岛1接合,在芯片3正面与引脚2正面之间进行键合金属线4作业,所述金属线4的材料采用金、银、铜、铝或是合金的材料,金属线4的形状可以是丝状也可以是带状;
步骤七、塑封
参见图7,在步骤六中的装有芯片3的金属基板的一面采用塑封料进行塑封,塑封方式可以采用模具灌胶方式、喷涂设备喷涂方式或是用贴膜方式;所述塑封料可以采用有填料物质或是无填料物质的环氧树脂;
步骤八、背面蚀刻
参见图8,在步骤七中塑封后的金属基板的背面进行化学蚀刻,把除了引脚2外多余的金属蚀刻掉;
步骤九、电镀金属层
参见图9,在经过步骤八的背面蚀刻后的含有外管脚的金属基板的背面电镀金属层,金属线路层材料可以是锡;
步骤十、切割成品
参见图10,将步骤九完成电镀金属层的半成品进行切割作业,使原本以阵列式集合体方式集成在一起的塑封体模块一颗颗切割独立开来,制得背面预蚀的封装结构成品,参见图11。
实施例2:
参见图12~22,本实施例中的一种背面预蚀的封装结构的封装工艺,本实施例与实施例1的区别在于:
在步骤八和步骤九之间增加一个步骤:在经过步骤八背面蚀刻的金属基板的背面涂覆一层绝缘层,如绿漆。参见图11。
除上述实施例外,本发明还包括有其他实施方式,凡采用等同变换或者等效替换方式形成的技术方案,均应落入本发明权利要求的保护范围之内。
Claims (6)
1.一种背面预蚀的封装结构的封装工艺,其特征在于,其封装工艺方法包括如下步骤:
步骤一、取金属基板;
步骤二、金属基板表面预镀铜层;
步骤三、光刻作业
在步骤二的金属基板正面及背面贴覆或印刷可进行曝光显影的光阻材料,并利用曝光显影设备对金属基板表面的光阻材料进行曝光、显影与去除部分光阻材料;
步骤四、化学蚀刻
对步骤三中金属基板的正面和背面完成曝光显影的区域进行化学蚀刻,正面和背面同时进行蚀刻,背面按照产品需求蚀刻出固定的形状和深度;
步骤五、电镀金属线路层
在步骤四中化学蚀刻后的金属基板的正面与管脚相对应的位置电镀一层金属线路层,形成相应的基岛和引脚;
步骤六、装片
在步骤五形成的基岛正面植入芯片,在基岛正面涂覆导电或是不导电的粘结物质后将芯片与基岛接合,在芯片正面与引脚正面之间进行键合金属线作业;
步骤七、塑封
在步骤六中的装有芯片的金属基板的一面采用塑封料进行塑封;
步骤八、背面蚀刻
在步骤七中塑封后的金属基板的背面进行化学蚀刻,把除了引脚外多余的金属蚀刻掉;
步骤九、电镀金属层
在经过步骤八的背面蚀刻后的含有外管脚的金属基板的背面电镀金属层;
步骤十、切割成品。
2.根据权利要求1所述的一种背面预蚀的封装结构的封装工艺,其特征在于:在步骤八和步骤九之间增加一个步骤:在经过步骤八背面蚀刻的金属基板的背面涂覆一层绝缘层。
3.根据权利要求1所述的一种背面预蚀的封装结构的封装工艺,其特征在于:步骤二中的铜层厚度在2~10微米。
4.根据权利要求1所述的一种背面预蚀的封装结构的封装工艺,其特征在于:步骤五中的金属线路层材料可以是铜、铝、镍、银、金、铜银、镍金、镍钯金,可以导电的金属物质都可以使用,并不局限铜、铝、镍、银、金、铜银、镍金、镍钯金等金属材料,电镀方式可以是化学沉积或是电解电镀方式。
5.根据权利要求1所述的一种背面预蚀的封装结构的封装工艺,其特征在于:步骤七中采用的塑封方式可以采用模具灌胶方式、喷涂设备喷涂方式或是用贴膜方式;所述塑封料可以采用有填料物质或是无填料物质的环氧树脂。
6.根据权利要求1所述的一种背面预蚀的封装结构的封装工艺,其特征在于:步骤九中的金属线路层材料可以是锡。
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