CN113039041B - 抛光层用聚氨酯、抛光层及抛光垫 - Google Patents
抛光层用聚氨酯、抛光层及抛光垫 Download PDFInfo
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- CN113039041B CN113039041B CN201980075650.3A CN201980075650A CN113039041B CN 113039041 B CN113039041 B CN 113039041B CN 201980075650 A CN201980075650 A CN 201980075650A CN 113039041 B CN113039041 B CN 113039041B
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Abstract
本发明提供一种抛光层用聚氨酯、使用其的抛光层及抛光垫，所述抛光层用聚氨酯具有由下述式(I)表示的末端基团，R－(OX)n－···(I)[式(I)中，R表示碳原子数1～30的一价烃基，该一价烃基任选被杂原子取代、任选夹杂有杂原子，X表示90～100％为亚乙基的碳原子数2～4的亚烷基，n表示8～120的数]。
Description
技术领域
本发明涉及可优选用作抛光垫的抛光层的材料的聚氨酯、使用了其的抛光层及使用了它们的抛光垫。
背景技术
目前，为了对作为半导体、硅晶片等的基板材料、作为硬盘、液晶显示器、透镜的材料的玻璃进行镜面加工、或为了将半导体装置的制造工序中由绝缘膜、金属膜形成的凹凸进行平坦化，利用了使用抛光浆料通过抛光垫对被抛光面进行抛光的化学机械抛光法(CMP)。在CMP中，要求高精度化、低成本化。因此，在确保比现有更高的平坦化性、平滑性的同时，要求减少表面的划痕、改善抛光速度及其稳定性，还要求能够长时间使用等进一步的高性能化。特别是在半导体装置的制造中，伴随着近些年的高集成化及多层布线化的发展，强烈要求提高平坦化性和低划痕性，所述平坦化性是以较少的抛光量、以较短的抛光时间将被抛光材料的表面(以下也称为被抛光面)进行平坦化的性能，所述低划痕性是在抛光时不易损伤被抛光面的性能。
作为抛光垫，已知如下抛光垫：使用了将聚氨酯树脂含浸于无纺布而成的无纺布类型的抛光层的抛光垫、使用了将双组分固化型聚氨酯浇铸发泡成型后通过适宜的磨削或切割而制造的发泡聚氨酯类型的抛光层的抛光垫。通常，无纺布类型的抛光层为低弹性且软质，发泡聚氨酯类型的抛光层为高弹性且高刚性。
与使用了发泡聚氨酯类型的抛光层的抛光垫相比，使用了现有的无纺布类型的抛光层的抛光垫与被抛光面接触的面(以下，也称为抛光面)是柔软的，因此低划痕性优异。另一方面，由于是低弹性的，因此平坦化性差。另外，含浸于无纺布中的聚氨酯树脂容易在厚度方向上不均匀地存在，因此，伴随着抛光层的磨损，抛光特性有时经时地发生改变。
另一方面，使用了发泡聚氨酯类型的抛光层的抛光垫是高刚性的，因此平坦化性高。另一方面，在抛光时容易对被抛光面的凸部局部地施加负载，而且抛光屑容易堆积在气孔中，因此低划痕性差。另外，由于发泡聚氨酯制造时的反应和发泡不均匀，因此发泡结构容易产生偏差。发泡结构的偏差会使抛光速度、平坦化性等抛光特性产生偏差。
要求兼具优异的平坦化性和低划痕性的抛光层，其解决了无纺布类型的抛光层及发泡聚氨酯类型的抛光层的各自的问题。然而，现有的发泡聚氨酯类型的抛光层、无纺布类型的抛光层难以满足该要求。为了进一步提高发泡聚氨酯类型的抛光层的平坦化性，必须有更高的硬度。但是，如果提高抛光垫的硬度，则通常低划痕性会降低。因此，对于发泡聚氨酯类型的抛光层而言，高平坦化性与优异的低划痕性为折衷选择的关系，因此难以得到充分兼具优异的平坦化性和低划痕性的抛光层。
作为解决这样的问题的技术，下述专利文献1及下述专利文献2公开了一种抛光层，其使用了将水溶性物质分散于非水溶性的热塑性聚合物中而成的片。另外，下述专利文献3中公开了一种抛光层，其使用了将水溶性颗粒分散于含有交联聚合物的非水溶性基质材料中而成的片。然而，这些抛光层未充分兼顾高平坦化性和优异的低划痕性。而且，由于这些抛光层包含水溶性物质，因此也存在这些物质在抛光时溶出而对抛光特性造成不良影响的隐患。此外，由于水溶性物质容易不均匀地分散在作为基质的非水溶性聚合物中，因此也存在抛光特性出现偏差的隐患。
另外，下述专利文献4公开了一种抛光垫，其通过使含有氨基甲酸酯树脂且含有特定的亲水剂的聚氨酯组合物进行发泡固化而得到，所述氨基甲酸酯树脂是使具有聚乙二醇等亲水性基团的多元醇共聚而成的。另外，下述专利文献5公开了一种抛光垫，其具有由聚氨酯树脂发泡体形成的抛光层，所述聚氨酯树脂发泡体含有具有氧亚乙基单元的亲水性高分子多元醇成分作为原料成分、且具有微细气泡。另外，下述专利文献6公开了一种抛光垫，其是具有由具有微细气泡的聚氨酯树脂发泡体形成的抛光层的抛光垫，其中，聚氨酯树脂发泡体含有如下成分作为原料成分：疏水性异氰酸酯末端预聚物(A)，其含有不具有除羟基以外的亲水性基团的疏水性高分子量多元醇成分和异氰酸酯成分作为原料成分而形成；亲水性异氰酸酯末端预聚物(B)，其含有具有氧亚乙基单元(-CH2CH2O-)的亲水性高分子量多元醇成分和异氰酸酯成分作为原料成分而形成；以及扩链剂。
现有技术文献
专利文献
专利文献1：日本特开2000-34416号公报
专利文献2：日本特开2001-47355号公报
专利文献3：日本特开2001-334455号公报
专利文献4：日本特开2003-128910号公报
专利文献5：日本特开2004-42250号公报
专利文献6：日本特开2005-68175号公报
发明内容
发明所要解决的课题
本发明的目的在于提供兼具高抛光速度和优异的低划痕性、且平坦化性也优异的抛光层。
用于解决课题的方法
本发明的一个方面为具有由下述式(I)表示的末端基团的抛光层用聚氨酯。R－(OX)n－···(I)[式(I)中，R表示碳原子数1～30的一价烃基，该一价烃基任选被杂原子取代、任选夹杂有杂原子，X表示90～100％为亚乙基的碳原子数2～4的亚烷基，n表示8～120的数]。使用这样的聚氨酯作为材料的抛光层兼聚高抛光速度和优异的低划痕性，且平坦化性也优异。
抛光层用聚氨酯在分子链末端具有氧亚烷基的90～100％为氧亚乙基的聚氧亚烷基。这样的键合于分子链末端的聚氧亚烷基与在两侧具有氨基甲酸酯键且运动性受聚氨酯的硬链段束缚的通常的来自于聚乙二醇的聚氧亚乙基不同，在聚氨酯与水、水性浆料接触时容易移动到聚氨酯的表面。因此，为了易于使抛光层的表面局部地亲水化及软化，通过改善抛光面与水性浆料的亲和性而使浆料保持性提高，显示出高抛光速度，另外，通过仅使与水性浆料接触的抛光面软化，能够抑制划痕的产生。
另外，从使末端基团充分地保持亲水性的方面考虑，优选由式(I)表示的末端基团中包含的R为碳原子数1～22的脂肪族烃基。
另外，从高亲水性与生产性的平衡优异的方面考虑，优选由式(I)表示的末端基团的氧亚烷基的重复数n为15～100。
另外，从亲水性与耐水性的平衡优异的方面考虑，优选含有0.005～0.05mmol/g的由式(I)表示的末端基团、或者含有1～10质量％的由上述式(I)表示的末端基团。
另外，聚氨酯优选为有机多异氰酸酯(A)、高分子多元醇(B)、扩链剂(C)及由下述式(II)表示的化合物(D)的反应产物。R－(OX)n－AH···(II)[式(II)中，R、X及n与式(I)相同，AH为羟基、氨基、或包含它们的碳原子数1～4的一价烃基]。
另外，从可以得到平坦化性、低划痕性特别优异的抛光层的方面考虑，聚氨酯的来自于有机多异氰酸酯(A)的异氰酸酯基的氮原子的比例优选为4.6～6.8质量％。
另外，从容易得到平坦化性和低划痕性特别优异、且透明性也优异的聚氨酯的方面考虑，高分子多元醇(B)优选含有70质量％以上的聚四亚甲基二醇。
另外，从在抛光时抛光层不易软化、平坦化性、经时稳定性特别优异的方面考虑，聚氨酯在50℃的温水中饱和溶胀时的吸水率优选为3％以下。
另外，从通过挤出成型等热成型而能够连续生产用作抛光层的成型体的方面考虑，聚氨酯优选具有热塑性。
另外，本发明的另一个方面是作为上述任意的聚氨酯的成型体的抛光层。进一步优选抛光层为非多孔性。根据这样的抛光层，可以得到兼具高抛光速度、优异的平坦化性及低划痕性的抛光垫。
为了使抛光垫保持高平坦化性，优选抛光层整体为高硬度。然而，在使抛光层整体为高硬度时，变得容易对被抛光面的凸部局部地施加负载而使低划痕性降低。另一方面，为了提高抛光速度，亲水性高的抛光层是有利的。然而，在现有的亲水性高的抛光层的情况下，通过抛光层吸水，使得硬度经时地降低，平坦化性降低，或者抛光速度降低。根据上述抛光层，作为抛光层整体，即使吸水，硬度也不易降低，通过具有高运动性的聚氨酯的分子链末端所键合的聚环氧烷仅在抛光面的附近移动，易于使抛光面亲水化及软化。由此，通过在使抛光层整体保持高硬度的同时仅降低与水性浆料接触的抛光面的弹性模量，从而能够保持高抛光速度、平坦化性，并且保持高低划痕性。
从高平坦化性和低划痕性特别优异的方面考虑，将抛光层在50℃的温水中浸渍72小时时，在23℃下的JIS-D硬度优选为55～75。
另外，本发明的另一个方面为包含抛光层和缓冲层的抛光垫，所述抛光层包含上述任意的抛光层用聚氨酯，所述缓冲层具有比抛光层的硬度更低的硬度。
发明效果
根据本发明，可以得到兼具高抛光速度和优异的低划痕性、且平坦化性优异的抛光层。
具体实施方式
以下，对本发明的一个实施方式的抛光层用聚氨酯(以下，也简称为聚氨酯)、抛光层及抛光垫进行详细说明。
本实施方式的聚氨酯具有由下述式(I)表示的末端基团：R－(OX)n－···(I)[式(I)中，R表示碳原子数1～30的一价烃基，该一价烃基任选被杂原子取代、任选夹杂有杂原子，X表示90～100％为亚乙基的碳原子数2～4的亚烷基，n表示8～120的数]。
上述这样的聚氨酯是使有机多异氰酸酯(A)、高分子多元醇(B)、扩链剂(C)及下述化学式(II)表示的化合物(D)进行反应而得到的聚氨酯。R－(OX)n－AH···(II)[式(II)中，R、X及n与式(I)相同，AH为羟基、氨基、或包含它们的碳原子数1～4的一价烃基]。
作为有机多异氰酸酯(A)，可以没有特别限定地使用一直以来在聚氨酯的制造中使用的有机多异氰酸酯。作为其具体例，例如可列举出四亚甲基二异氰酸酯、五亚甲基二异氰酸酯、六亚甲基二异氰酸酯、九亚甲基二异氰酸酯、异佛尔酮二异氰酸酯、4,4’-二环己基甲烷二异氰酸酯、赖氨酸二异氰酸酯、亚环己基二异氰酸酯、1,3-或1,4-双(异氰酸根合甲基)环己烷等脂肪族或脂环式二异氰酸酯；2,4’-或4,4’-二苯基甲烷二异氰酸酯、2,4-或2,6-甲苯二异氰酸酯、间苯二异氰酸酯、对苯二异氰酸酯、间苯二甲基二异氰酸酯、对苯二甲基二异氰酸酯、1,5-萘二异氰酸酯、4,4’-二异氰酸根合联苯、3,3’-二甲基-4,4’-二异氰酸根合联苯、3,3’-二甲基-4,4’-二异氰酸根合二苯基甲烷、氯亚苯基-2,4-二异氰酸酯、四甲基苯二甲基二异氰酸酯等芳香族二异氰酸酯；赖氨酸三异氰酸酯、聚亚甲基聚苯基多异氰酸酯等三官能以上的多异氰酸酯。这些化合物可以单独使用，也可以组合使用2种以上。其中，从容易得到高硬度且平坦化性优异的抛光层的方面考虑，特别优选为芳香族或脂环式二异氰酸酯。另外，从容易得到耐磨损性优异的抛光层的方面考虑，优选为选自4,4’-二苯基甲烷二异氰酸酯、2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、异佛尔酮二异氰酸酯、1,4-双(异氰酸根合甲基)环己烷中的至少1种，特别优选为4,4’-二苯基甲烷二异氰酸酯。
作为高分子多元醇(B)，可以没有特别限定地使用一直以来在聚氨酯的制造中使用的高分子多元醇。作为其具体例，例如可列举出聚乙二醇、聚丙二醇、聚四亚甲基二醇、聚甲基四亚甲基二醇等聚醚多元醇；聚己二酸乙二醇酯二醇、聚己二酸丁二醇酯二醇、聚己二酸己二醇酯二醇、聚己内酯二醇等聚酯多元醇；聚五亚甲基碳酸酯二醇、聚六亚甲基碳酸酯二醇等聚碳酸酯多元醇等。这些化合物可以单独使用，也可以组合使用2种以上。其中，优选为聚醚二醇或聚酯二醇，特别是从容易得到抛光速度、低划痕性优异的抛光层的方面考虑，优选为聚醚二醇，特别优选为选自聚乙二醇及聚四亚甲基二醇中的至少1种。
从聚氨酯的硬度、弹性模量适度、且抛光层的平坦化性与低划痕性的平衡优异的方面考虑，高分子多元醇(B)的数均分子量优选为400～2000、进一步优选为500～1500、进一步优选为600～1200。需要说明的是，在高分子多元醇的数均分子量过高的情况下，得到的聚氨酯中的软链段与硬链段的相分离变得过大，存在在抛光中光学检测终点时所要求的透光性容易降低的倾向。从容易得到平坦化性与低划痕性的平衡优异、且透光性也优异的聚氨酯的方面考虑，特别优选高分子多元醇(B)的70质量％以上为数均分子量600～1500的聚四亚甲基二醇，进一步优选高分子多元醇(B)的80质量％以上为数均分子量700～1200的聚四亚甲基二醇。另外，为了在保持抛光层的耐磨损性的同时进一步提高亲水性，高分子多元醇(B)的一部分可以是数均分子量400～2000、优选为600～1500的聚乙二醇。需要说明的是，高分子二醇的数均分子量是基于依据JIS K 1557测得的羟值而计算出的数均分子量。
作为扩链剂(C)，可列举出一直以来在聚氨酯的制造中使用的、在分子中具有2个以上能够与异氰酸酯基反应的活性氢的优选分子量为250以下的低分子化合物。作为其具体例，例如可列举出乙二醇、二乙二醇、丙二醇、1,2-丁二醇、1,3-丁二醇、1,4-丁二醇、1,5-戊二醇、新戊二醇、1,6-己二醇、3-甲基-1,5-戊二醇、1,4-双(β-羟基乙氧基)苯、1,4-环己二醇、1,8-辛二醇、1,9-壬二醇、2-甲基-1,8-辛二醇、1,10-癸二醇、间苯二甲醇、对苯二甲醇等二醇类；乙二胺、四亚甲基二胺、六亚甲基二胺、七亚甲基二胺、八亚甲基二胺、九亚甲基二胺、癸亚甲基二胺、十二亚甲基二胺、2,2’,4-或2,4,4’-三甲基六亚甲基二胺、3-甲基五亚甲基二胺、1,2-环己二胺、1,3-或1,4-环己二胺、苯二甲胺、异佛尔酮二胺、哌嗪、二氨基甲苯、二甲苯二胺、4,4’-二氨基二苯基甲烷、4,4’-二氨基二苯基醚、4,4’-二氨基二苯砜等二胺类、三羟甲基丙烷、二亚乙基三胺等三官能化合物等。这些化合物可以单独使用，也可以组合使用2种以上。其中，优选为分子量60～250的有机二醇，特别是从容易得到抛光速度、平坦化性优异的抛光层的方面考虑，优选为选自1,4-丁二醇、1,5-戊二醇、3-甲基-1,5-戊二醇、1,6-己二醇、1,8-辛二醇、1,9-壬二醇、2-甲基-1,8-辛二醇、1,10-癸二醇中的至少1种。
化合物(D)为由化学式(II)表示的化合物：R－(OX)n－AH···(II)[式(II)中，R、X及n与式(I)相同，AH为羟基、氨基、被羟基或氨基取代的碳原子数1～4的一价烃基]。
烃基R为碳原子数1～30的一价烃基，且其任选被杂原子取代、任选夹杂有杂原子，包括直链状、支链状或环状的一价饱和或不饱和的烃基。
烃基R的碳原子数为1～30，优选为1～24。烃基的碳原子数超过30时，烃基R的疏水性增高，在将聚氨酯作为抛光层使用时，与水性浆料的亲水性变得不充分，由式(I)表示的末端基团难以移动到聚氨酯的表面。作为这样的烃基R的具体例，例如可列举出甲基(碳原子数1)、乙基(碳原子数2)、丙基(碳原子数3)、丁基(碳原子数4)、戊基(碳原子数5)、己基(碳原子数6)、庚基(碳原子数7)、辛基(碳原子数8)、2-乙基己基(碳原子数8)、壬基(碳原子数9)、2-甲基辛基(碳原子数9)、癸基(碳原子数10)、异癸基(碳原子数10)、十二烷基(碳原子数12、别名：月桂基)、十三烷基(碳原子数13)、十四烷基(碳原子数14、别名：肉豆蔻基)、十六烷基(碳原子数16、别名：鲸蜡基)、十八烷基(碳原子数18、别名：硬脂基)、2-辛基十二烷基(碳原子数20)、二十二烷基(碳原子数22、别名：山萮基)、二十四烷基(碳原子数24)、二十八烷基(碳原子数28)等饱和脂肪族烃基；乙烯基(碳原子数2)、烯丙基(碳原子数3)、1-丁烯基(碳原子数4)、2-丁烯基(碳原子数4)、油基(碳原子数18)等不饱和脂肪族烃基；环丙基(碳原子数3)、环丁基(碳原子数4)、环戊基(碳原子数5)、环己基(碳原子数6)等环式饱和烃；苯基(碳原子数6)、苄基(碳原子数7)、萘基(碳原子数10)、辛基苯基(碳原子数14)、壬基苯基(碳原子数15)、十二烷基苯基(碳原子数16)等芳香族烃基等。另外，这些基团任选被氧原子、氮原子、硫原子等杂原子取代，任选夹杂有杂原子。其中，从容易得到聚氨酯的亲水性与耐水性的平衡优异、抛光速度、平坦化性、低划痕性特别优异的抛光层的方面考虑，优选烃基R为碳原子数1～22的脂肪族烃基。
另外，X表示90～100％为亚乙基的碳原子数2～4的亚烷基，具体而言，对于氧亚烷基(OX)而言，90～100％为氧亚乙基(O-CH2CH2)，也可以在0～10％的范围内包含氧亚丙基(O-CH2CH2CH2)或(O-CH2CH(CH3))、氧亚丁基(O-CH2CH2CH2CH2)或(O-CH2CH(CH2CH3))等。氧亚乙基(O-CH2CH2)低于90％时，亲水性的提高效果降低。需要说明的是，X的比例基于X的个数。
(OX)的重复数n为8～120，优选为15～100。重复数n大于120时，亲水性基团的分子量过大，存在与有机多异氰酸酯(A)的反应性降低的隐患。另外，氧亚乙基的重复数n小于8时，亲水性降低，抛光速度、低划痕性的改善效果减小。
另外，AH是具有与异氰酸酯基进行反应的活性氢的基团，是羟基、氨基、被羟基或氨基取代的碳原子数1～4的一价烃基。从反应性的方面考虑，AH优选为羟基或氨基。
作为化合物(D)，从以较少量的化合物(D)也使聚氨酯的表面充分地亲水化、易于得到抛光速度、平坦化性、低划痕性优异的抛光层的方面考虑，特别优选烃基R为碳原子数1～22的脂肪族烃基、且(OX)的重复数n为15～100。另外，更优选烃基R为碳原子数1～16的饱和脂肪族烃基、且(OX)的重复数n为18～60。另外，进一步优选烃基R为碳原子数1～13的饱和脂肪族烃基、且(OX)的重复数n为20～50。
从亲水性与耐水性的平衡优异的方面考虑，聚氨酯优选以0.005～0.05mmol/g、进一步优选以0.006～0.046mmol/g、特别优选以0.008～0.042mmol/g的比例包含由式(I)表示的末端基团。由式(I)表示的末端基团过少时，具有亲水性的提高效果减小的倾向。另外，由式(I)表示的末端基团过多时，存在耐水性不足、或分子量降低而使耐磨损性降低的隐患。
另外，从可以得到平坦化性、低划痕性特别优异的抛光层的方面考虑，聚氨酯中的来自有机多异氰酸酯(A)的异氰酸酯基的氮原子的比例优选为4.6～6.8质量％、进一步优选为4.8～6.5质量％、特别优选为5.0～6.2质量％。氮原子的比例过低时，存在硬度降低的倾向。另外，氮原子的比例过高时，存在由式(I)表示的末端基团难以移动到聚氨酯的表面的倾向。
另外，从可以得到平坦化性、低划痕性特别优异的抛光层的方面考虑，聚氨酯中的由式(I)表示的末端基团的比例优选为1～10质量％、进一步优选为1.2～9.5质量％、特别优选为1.4～9质量％。由式(I)表示的末端基团的比例过低时，存在亲水性的改善效果减小的倾向。另外，由式(I)表示的末端基团的比例过高时，存在耐水性容易降低的倾向。
另外，在使用了聚乙二醇作为高分子多元醇(B)的情况下，聚氨酯中的由式(I)表示的末端基团的聚氧亚乙基及来自于聚乙二醇的聚氧亚乙基的含有比例的总计优选为1.5～20质量％、进一步优选为2～15质量％、特别优选为3～10质量％。
从在抛光时抛光层不易软化、平坦化性、经时稳定性特别优异的方面考虑，聚氨酯在50℃的温水中饱和溶胀时的吸水率优选为3％以下、进一步优选为2.7％以下、特别优选为2.4％以下。
本实施方式的聚氨酯可以将包含有机多异氰酸酯(A)、高分子多元醇(B)、扩链剂(C)及化合物(D)的单体作为原料、并通过公知的聚氨酯的制造方法来制造。具体而言，例如可以通过预聚物法、一步法等公知的熔融聚合方法、溶液聚合方法等来制造。作为熔融聚合方法，例如，可以通过在实质上不存在溶剂的情况下将这些单体的混合物按给定的比率进行熔融混炼使其聚合来制造。作为熔融混炼，例如可列举出使用多螺杆型挤出机进行连续熔融聚合的方法。另外，作为溶液聚合方法，例如，可以通过将这些单体的混合物按给定的比率混合在有机溶剂中使其聚合来制造。
这样得到的本实施方式的聚氨酯可以是热塑性聚氨酯，也可以是热固性聚氨酯，从低划痕性更优异的方面考虑，优选为热塑性。需要说明的是，热塑性是指，能够通过挤出成型、注射成型、压延成型、3D打印等的加热工序进行熔融而成型的特性。本实施方式的聚氨酯可以通过经过这些加热工序的成型方法而成型为片状的成型体等。特别是，根据使用了T模头的挤出成型可以简便地得到厚度均匀的片状成型体，从这方面考虑是优选的。
从硬度增高而发挥特别优异的平坦化性的方面、表面没有气孔而不易发生抛光屑的堆积因而低划痕性优异的方面、抛光层的磨损速度小而能够长时间使用的方面考虑，作为本实施方式的抛光层使用的聚氨酯成型体优选为非多孔性(非发泡体)。
另外，从平坦化性、抛光速度及低划痕性特别优异的方面考虑，将抛光层在50℃的温水中浸渍72小时时，在23℃下的JIS-D硬度优选为45～75、进一步优选为48～72、特别优选为51～69。
另外，对于抛光层而言，与水接触15分钟后的接触角越低，抛光速度越快，低划痕性也越优异，从这方面考虑是优选的。具体而言，与水接触15分钟后的接触角优选为44°以下、进一步优选为42°以下、特别优选为40°以下。抛光层与水的接触角为44°以下时，抛光浆料通常除了水、磨料之外还包含水溶性的低分子化合物，因此抛光面的润湿性高于水，具有与抛光浆料的接触角变得非常小的倾向。
本实施方式的聚氨酯可以用于各种用途，特别是优选用作用于对半导体晶片、半导体装置、硅晶片、硬盘、玻璃基板、光学产品、或各种金属等进行抛光的抛光垫的抛光层。抛光层的厚度没有特别限定，可根据抛光垫的层构成、用途进行适当调整。具体而言，例如，优选为0.8～3.0mm、进一步优选为1.0～2.5mm、特别优选为1.2～2.0mm。另外，在利用挤出成型、注射成型、压延成型、3D打印等成型方法将用于制造抛光层的片状的聚氨酯成型体进行成型时，片状的聚氨酯成型体可以是非多孔性，也可以是多孔性，特别优选为非多孔性。
抛光层可以通过切削、切割、抛光、冲裁加工等对如上所述得到的片状的聚氨酯成型体调整尺寸、形状、厚度等来制造。另外，对于抛光层的抛光面而言，为了将浆料均匀且充分地供给至抛光面，优选形成槽、孔那样的凹部。这样的凹部也有助于排出成为划痕产生原因的抛光屑、防止因抛光垫的吸附而导致的晶片破损。
本实施方式的抛光垫可以是仅由抛光层构成的单层型抛光垫，也可以是在抛光层的背面进一步层叠有缓冲层的多层型抛光垫。作为缓冲层，从能够在保持平坦化性的同时提高抛光均匀性的方面考虑，优选为具有比抛光层的硬度更低的硬度的层。
作为用作缓冲层的材料的具体例，可列举出将聚氨酯含浸于无纺布而成的复合体(例如，“Suba400”(Nitta Haas公司制))；天然橡胶、丁腈橡胶、聚丁二烯橡胶、硅橡胶等橡胶；聚酯类热塑性弹性体、聚酰胺类热塑性弹性体、含氟热塑性弹性体等热塑性弹性体；发泡塑料；聚氨酯等。其中，从容易获得作为缓冲层的优选的柔软性的方面考虑，特别优选为具有发泡结构的聚氨酯。
本实施方式中得到的抛光垫可以特别优选用于半导体基板、玻璃基板、或者形成于半导体基板上的氧化硅膜那样的绝缘膜、铜膜那样的金属膜的化学机械抛光等。
实施例
以下，通过实施例对本发明更具体地进行说明。需要说明的是，本发明的范围并不受这些实施例的任何限定。
首先，以下汇总示出本实施例中制造聚氨酯所使用的有机多异氰酸酯(A)、高分子多元醇(B)、扩链剂(C)、化合物(D)。
〈多异氰酸酯(A)〉
·4,4’-二苯基甲烷二异氰酸酯(MDI)
〈高分子多元醇(B)〉
·数均分子量850的聚四亚甲基二醇(PTG850)
·数均分子量1000的聚四亚甲基二醇(PTG1000)
·数均分子量600的聚乙二醇(PEG600)
·数均分子量2000的聚乙二醇(PEG2000)
〈扩链剂(C)〉
·1,4-丁二醇(BD)
·1,9-壬二醇(ND)
〈化合物(D)〉
·MePOE4：R为甲基，(OX)的100％为(O-CH2CH2)、n＝4
·MePOE9：R为甲基，(OX)的100％为(O-CH2CH2)、n＝9
·MePOE23：R为甲基，(OX)的100％为(O-CH2CH2)、n＝23
·MePOE45：R为甲基，(OX)的100％为(O-CH2CH2)、n＝45
·MePOE91：R为甲基，(OX)的100％为(O-CH2CH2)、n＝91
·BuPOE3：R为丁基，(OX)的100％为(O-CH2CH2)、n＝3
·EHPOE6：R为2-乙基己基，(OX)的100％为(O-CH2CH2)n＝6
·EHPOE30：R为2-乙基己基，(OX)的100％为(O-CH2CH2)、n＝30
·C10POE31：R为异癸基，(OX)的100％为(O-CH2CH2)、n＝31
·C12POE5：R为十二烷基，(OX)的100％为(O-CH2CH2)、n＝5
·C12POE19：R为十二烷基，(OX)的100％为(O-CH2CH2)、n＝19
·C12POE25：R为十二烷基，(OX)的100％为(O-CH2CH2)、n＝25
·C12POE41：R为十二烷基，(OX)的100％为(O-CH2CH2)、n＝41
·C13POE49：R为十三烷基，(OX)的100％为(O-CH2CH2)、n＝49
·C22POE30：R为二十二烷基，(OX)的100％为(O-CH2CH2)、n＝30
需要说明的是，上述化合物(D)中，AH均为羟基。
[实施例1]
以MDI∶PTG1000∶PEG600∶BD∶MePOE9＝49.0∶31.7∶3.6∶14.2∶1.5(质量比)的比例进行混合，制造了氨基甲酸酯预聚物。然后，利用小型捏合机在240℃、螺杆转速100rpm的条件下将得到的氨基甲酸酯预聚物混炼5分钟，由此得到了热塑性聚氨酯。根据原料配合比计算出的来自于异氰酸酯基的氮原子含量为5.5质量％，聚氧亚乙基的含有比例为5.0质量％。另外，聚氨酯中的末端基团R－(OX)n－的比例为1.5质量％，且为0.038mmol/g。另外，通过以下的方法评价了聚氨酯在50℃下的饱和吸水率。
〈在50℃的水中浸渍后的饱和吸水率〉
通过热压制作了厚度约为300μm的膜后，在25℃、50％RH的条件下放置3天。测定放置后的质量作为干燥时的质量。接着，将干燥后的膜浸渍在50℃的离子交换水中，从50℃的水中取出后立即拭去膜表面的多余的水滴，测定了吸水后的质量。每2天测定样品的质量，直至质量达到饱和为止，将质量不再发生变化时的吸水后的质量作为饱和吸水后的质量。根据下式计算出吸水率，结果为1.7质量％。
吸水率(％)＝[(饱和吸水后的质量－干燥时的质量)/干燥时的质量]×100
然后，通过真空热压将得到的聚氨酯制成厚度约为2mm的非多孔性的片后，对聚氨酯片的表面进行磨削，由此得到了厚度1.5mm的聚氨酯成型体。通过以下的方法评价了将聚氨酯成型体在50℃的温水中浸渍72小时后的23℃下的JIS-D硬度及接触角。
〈在50℃的水中浸渍72小时后的23℃下的JIS-D硬度〉
将聚氨酯成型体在50℃的离子交换水中浸渍72小时后，在23℃的水中浸渍30分钟。从水中取出后立即拭去表面多余的水滴，然后通过依据JIS K6253的硬度计(durometer)硬度试验(类型D)测定了硬度。D硬度为54。
〈与水的接触角〉
在20℃、65％RH的条件下将聚氨酯成型体放置3天。然后，使用协和界面科学株式会社制的DropMaster500，在聚氨酯成型体上滴加水滴，测定了滴加15分钟后与水的接触角。接触角为40度。
接着，在成为厚度1.5mm的聚氨酯成型体的抛光面的主表面以3.0mm间隔螺旋状地形成了宽度0.5mm、深度1.0mm的槽。然后，将聚氨酯成型体切成直径38cm的圆形，制造了抛光层。然后，用双面粘合片将缓冲层粘贴在抛光层的背面，制作了多层型的抛光垫。作为缓冲层，使用了Inoac Corporation制“PORON H-48”，其是厚度0.8mm的发泡聚氨酯制造的片。然后，通过以下的评价方法评价了得到的抛光垫的抛光特性。
〈抛光速度、划痕〉
将得到的抛光垫安装于MAT公司制的抛光装置“MAT-BC15”。然后，使用A.L.M.T.Corp.公司制的金刚石修整工具(金刚石型号#60、基体金属直径19cm)，在修整工具转速140rpm、抛光垫转速100rpm、修整工具负载5N的条件下，以150mL/分的速度一边使纯水流动一边使用金刚石修整工具对抛光垫表面进行60分钟调节。接着，准备了将CabotMicroelectronics公司制的抛光浆料“SS-25”稀释至2倍而制成的pH12的抛光浆料。然后，在台板转速100rpm、压头转速99rpm、抛光压力41.4kPa的条件下，以80mL/分的速度一边向抛光垫的抛光面供给抛光浆料，一边对表面具有膜厚1000nm的氧化硅膜的直径4英寸的硅晶片进行60秒钟的抛光。然后，在抛光60秒钟后，进行30秒钟的抛光垫的调节。然后，再次对其它硅晶片进行抛光，进一步进行30秒钟调节。由此，对10片硅晶片进行了抛光。
然后，测定第10片抛光的硅晶片在抛光前和抛光后的氧化硅膜的膜厚，求出了抛光速度。抛光速度为299nm/分。另外，对于第10片抛光的晶片，使用KEYENCE公司制的激光显微镜“VKX-200”以物镜倍率1000倍随机观察100个位置，确认了有无划痕。未确认到划痕。
〈平坦化性〉
在与上述相同的条件下，对1片具有交替地重复排列有凸部和凹部的凹凸图案的SKW公司制STI抛光评价用图案晶片“SKW3-2”进行了抛光。需要说明的是，该图案晶片具有各种宽度和间距的凹凸图案区域。图案凸部是在硅晶片上层叠有膜厚15nm的氧化硅膜、在其上层叠有膜厚170nm的氮化硅膜、进一步在其上层叠有膜厚700nm的氧化硅膜(通过高密度等离子体化学蒸镀而形成的HDP氧化硅膜)的结构。图案凹部是在对硅晶片进行300nm蚀刻而形成槽后形成了膜厚700nm的HDP氧化硅膜的结构。作为评价对象，选择了包含凸部宽度30μm和凹部宽度70μm的图案的区域。在直至层叠在图案凸部的氮化硅膜上的氧化硅膜消失为止的期间对图案晶片进行抛光，并进一步追加相当于该期间的10％的时间进行抛光。使用表面粗糙度测量仪(Mitutoyo公司制“SJ-400”)以标准触针、测定范围80μm、JIS2001、GAUSS滤波器、截止值λc2.5mm及截止值λs8.0μm的设定进行测定，基于截面曲线求出了抛光后的上述图案的高低差，结果为65nm。高低差越小，平坦化性越优异。
将结果示于下述表1。
[实施例2～7、比较例1～4]
将聚氨酯的单体混合物的组成变更为表1所示的组成，除此以外，与实施例1同样地制造了聚氨酯。然后，与实施例1同样地制作了聚氨酯成型体、抛光层及抛光垫，同样地进行了评价。将结果示于表1。
根据表1的结果可知如下情况。对于使用了具有氧亚乙基(O-CH2CH2)的重复单元数n为8～120范围的末端基团的实施例1～7中得到的聚氨酯的抛光层而言，尽管在50℃的水中浸渍时的饱和吸水率低，但与水的接触角也低。因此，在抑制由吸水所引起的抛光层的软化的同时，表面的亲水性高，显示出高抛光速度、低划痕性及高平坦化性。另一方面，对于使用了不具有带有聚氧亚乙基的末端基团的比较例1～3中得到的聚氨酯的抛光层、使用了氧亚乙基的重复单元数n小于8的比较例4中得到的聚氨酯的抛光层而言，在50℃的水浸渍中时的饱和吸水率高、与水的接触角高。因此，表面的亲水性低、由于吸水而使抛光层软化，抛光速度降低，而且平坦化性也差。
[实施例8～14、比较例5～8]
将聚氨酯的单体混合物的组成变更为表2所示的组成，除此以外，与实施例1同样地制造了聚氨酯。然后，与实施例1同样地制作了聚氨酯成型体、抛光层及抛光垫。然后，使用金刚石型号为#100的金刚石修整工具，作为评价对象的凹凸图案，选择了包含凸部宽度100μm和凹部宽度100μm的图案的区域，除此以外，与实施例1同样地进行了评价。将结果示于下述表2。
根据表2的结果可知如下情况。对于使用了具有氧亚乙基的重复单元数n为8～120范围的末端基团的实施例8～14中得到的聚氨酯的抛光层而言，尽管在50℃的水浸渍中时的饱和吸水率低，但与水的接触角也低。因此，在抑制由吸水所引起的抛光层的软化的同时，表面的亲水性高，显示出高抛光速度、低划痕性及高平坦化性。另一方面，对于使用了不具有带有聚氧亚乙基的末端基团的比较例5～8中得到的聚氨酯的抛光层而言，抛光层表面的亲水性低，抛光速度低，而且平坦化性、低划痕性差。
[实施例15～21、比较例9～12]
将聚氨酯的单体混合物的组成变更为表3所示的组成，除此以外，与实施例1同样地制造了聚氨酯。需要说明的是，在实施例21中，使用了表3所示的2种化合物作为化合物(D)。然后，与实施例1同样地制作了聚氨酯成型体、抛光层及抛光垫。然后，使用金刚石型号为#100的金刚石修整工具，除此以外，与实施例1同样地进行了评价。将结果示于下述表3。
根据表3的结果可知如下情况。对于使用了具有氧亚乙基的重复单元数n为8～120的范围的末端基团的实施例15～21中得到的聚氨酯的抛光层而言，尽管在50℃的水中浸渍时的饱和吸水率低，但与水的接触角也低。因此，抑制由吸水所引起的抛光层的软化的同时，表面的亲水性高，显示出高抛光速度、低划痕性、高平坦化性。另一方面，对于使用了不具有带有聚氧亚乙基的末端基团的比较例9～11中得到的聚氨酯的抛光层、使用了氧亚乙基的重复单元数n小于8的比较例12中得到的聚氨酯的抛光层而言，与水的接触角高。因此，表面的亲水性低，抛光速度低，平坦化性、低划痕性差。
[实施例22～25、比较例13～19]
将聚氨酯的单体混合物的组成变更为表4所示的组成，除此以外，与实施例1同样地制造了聚氨酯。然后，与实施例1同样地制作了聚氨酯成型体。然后，在成为聚氨酯成型体的抛光面的主表面以6.0mm间隔螺旋状地形成了宽度1.0mm、深度1.0mm的槽，除此以外，与实施例1同样地制作了抛光层及抛光垫。然后，使用金刚石型号为#200的金刚石修整工具，选择了包含凸部宽度250μm和凹部宽度250μm的图案的区域作为评价对象的凹凸图案，除此以外，与实施例1同样地进行了评价。将结果示于下述表4。
根据表4的结果可知如下情况。对于使用了具有氧亚乙基的重复单元数n为8～120范围的末端基团的实施例22～25中得到的聚氨酯的抛光层而言，尽管在50℃的水中浸渍时的饱和吸水率低，但与水的接触角也低。因此，在抑制由吸水所引起的抛光层的软化的同时，表面的亲水性高，显示出高抛光速度、低划痕性及高平坦化性。另一方面，对于使用了不具有带有聚氧亚乙基的末端基团的比较例13～15中得到的聚氨酯的抛光层、使用了氧亚乙基的重复单元数n小于8的比较例16～19中得到的聚氨酯的抛光层而言，与水的接触角高。因此，抛光层表面的亲水性低，抛光速度低，而且平坦化性、低划痕性差。
工业实用性
本发明的聚氨酯、抛光层用成型体及抛光垫对于半导体基板、玻璃等的抛光用途是有用的。特别是在对半导体、硬盘、液晶显示器等的基板材料、或者透镜、反射镜等光学部件等进行化学机械抛光时是适合的。
Claims (13)
1.一种抛光层，其包含含有聚氨酯的成型体，所述聚氨酯在聚氨酯的分子链末端具有由下述式(I)表示的末端基团，
R－(OX)n－···(I)
式(I)中，R表示碳原子数1～30的一价烃基，该一价烃基任选被杂原子取代、任选夹杂有杂原子，X表示90～100％为亚乙基的碳原子数2～4的亚烷基，n表示8～120的数。
2.根据权利要求1所述的抛光层，其中，所述R为碳原子数1～22的脂肪族烃基。
3.根据权利要求1所述的抛光层，其中，所述n为15～100。
4.根据权利要求1所述的抛光层，其中，所述聚氨酯含有0.005～0.05mmol/g的由所述式(I)表示的末端基团。
5.根据权利要求1所述的抛光层，其中，所述聚氨酯含有1～10质量％的由所述式(I)表示的末端基团。
6.根据权利要求1所述的抛光层，其中，所述聚氨酯是有机多异氰酸酯(A)、高分子多元醇(B)、扩链剂(C)及由下述式(II)表示的化合物(D)的反应产物，
R－(OX)n－AH···(II)
式(II)中，R、X及n与式(I)相同，AH为羟基、氨基、或包含它们的碳原子数1～4的一价烃基。
7.根据权利要求6所述的抛光层，其中，来自于所述有机多异氰酸酯(A)的异氰酸酯基的氮原子的比例为4.6～6.8质量％。
8.根据权利要求6所述的抛光层，其中，所述高分子多元醇(B)含有70质量％以上的聚四亚甲基二醇。
9.根据权利要求1所述的抛光层，其中，所述聚氨酯在50℃的温水中饱和溶胀时的吸水率为3％以下。
10.根据权利要求1所述的抛光层，其中，所述聚氨酯具有热塑性。
11.根据权利要求1所述的抛光层，其中，所述成型体为非多孔性。
12.根据权利要求1所述的抛光层，其在50℃的温水中浸渍72小时时，在23℃下的JIS-D硬度为45～75。
13.一种抛光垫，其包含：
权利要求1～12中任一项所述的抛光层、以及具有比所述抛光层的硬度更低的硬度的缓冲层。
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| JP5411862B2 (ja) * | 2008-08-08 | 2014-02-12 | 株式会社クラレ | 研磨パッド及び研磨パッドの製造方法 |
| EP2444433A4 (en) * | 2009-06-18 | 2014-06-11 | Jsr Corp | POLYURETHANE, COMPOSITION FOR THE FORMATION OF POLISHING LAYERS THEREFOR, CLOTH FOR CHEMICAL-MECHANICAL CLEANING AND CHEMICAL-MECHANICAL CLEANING PROCESS THEREWITH |
| CN102101908B (zh) * | 2009-12-18 | 2012-11-28 | 广州熵能聚合物技术有限公司 | 一种水溶性聚氨酯缔合型增稠剂及其应用 |
| JP5528169B2 (ja) * | 2010-03-26 | 2014-06-25 | 東洋ゴム工業株式会社 | 研磨パッドおよびその製造方法、ならびに半導体デバイスの製造方法 |
| JP5426469B2 (ja) * | 2010-05-10 | 2014-02-26 | 東洋ゴム工業株式会社 | 研磨パッドおよびガラス基板の製造方法 |
| JP5738731B2 (ja) * | 2011-09-22 | 2015-06-24 | 東洋ゴム工業株式会社 | 研磨パッド |
| JP5789523B2 (ja) * | 2012-01-10 | 2015-10-07 | 株式会社クラレ | 研磨パッド、及び研磨パッドを用いた化学的機械的研磨方法 |
| CN105170019B (zh) | 2015-07-31 | 2018-03-23 | 泰山玻璃纤维有限公司 | 一种阳离子型聚氨酯大分子多子表面活性剂的制备方法 |
| KR102170859B1 (ko) * | 2016-07-29 | 2020-10-28 | 주식회사 쿠라레 | 연마 패드 및 그것을 사용한 연마 방법 |
| US10086494B2 (en) * | 2016-09-13 | 2018-10-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High planarization efficiency chemical mechanical polishing pads and methods of making |
| US10208154B2 (en) * | 2016-11-30 | 2019-02-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Formulations for chemical mechanical polishing pads and CMP pads made therewith |
-
2019
- 2019-09-03 EP EP19893889.6A patent/EP3892418A4/en active Pending
- 2019-09-03 IL IL282788A patent/IL282788B1/en unknown
- 2019-09-03 US US17/288,579 patent/US20210388234A1/en active Pending
- 2019-09-03 JP JP2020559723A patent/JP6960063B2/ja active Active
- 2019-09-03 CN CN201980075650.3A patent/CN113039041B/zh active Active
- 2019-09-03 KR KR1020217015876A patent/KR102638363B1/ko active IP Right Grant
- 2019-09-03 WO PCT/JP2019/034512 patent/WO2020115968A1/ja active Application Filing
- 2019-09-03 SG SG11202104629QA patent/SG11202104629QA/en unknown
- 2019-11-06 TW TW108140211A patent/TWI714336B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| IL282788A (en) | 2021-06-30 |
| US20210388234A1 (en) | 2021-12-16 |
| EP3892418A4 (en) | 2022-08-17 |
| IL282788B1 (en) | 2024-04-01 |
| SG11202104629QA (en) | 2021-06-29 |
| WO2020115968A1 (ja) | 2020-06-11 |
| CN113039041A (zh) | 2021-06-25 |
| KR102638363B1 (ko) | 2024-02-19 |
| TWI714336B (zh) | 2020-12-21 |
| JP6960063B2 (ja) | 2021-11-05 |
| KR20210082497A (ko) | 2021-07-05 |
| TW202026324A (zh) | 2020-07-16 |
| JPWO2020115968A1 (ja) | 2021-10-07 |
| EP3892418A1 (en) | 2021-10-13 |
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