CN113013105A - 具有用于直接芯片安装的毛细管流动结构的半导体裸片 - Google Patents

具有用于直接芯片安装的毛细管流动结构的半导体裸片 Download PDF

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CN113013105A
CN113013105A CN202011480651.7A CN202011480651A CN113013105A CN 113013105 A CN113013105 A CN 113013105A CN 202011480651 A CN202011480651 A CN 202011480651A CN 113013105 A CN113013105 A CN 113013105A
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capillary flow
substrate
semiconductor die
semiconductor device
channel
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CN113013105B (zh
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李仲培
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Micron Technology Inc
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Micron Technology Inc
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
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Abstract

本申请涉及一种具有用于直接芯片安装的毛细管流动结构的半导体裸片。本文提供一种具有用于直接芯片安装的毛细管流动结构的半导体装置。所述半导体装置通常包含衬底及具有电耦合到所述衬底的导电支柱的半导体裸片。所述半导体裸片的前侧可与所述衬底间隔开一定距离，从而形成间隙。所述半导体装置进一步包含从所述半导体裸片的所述前侧突出的第一及第二细长毛细管流动结构，所述第一及第二细长毛细管流动结构至少部分地朝向所述衬底延伸。所述第一及第二细长毛细管流动结构可以第一宽度彼此间隔开，所述第一宽度经配置以引起底部填充材料沿着所述第一及第二细长毛细管流动结构的长度进行毛细管流动。所述第一及第二毛细管流动结构可包含在其间形成通道以引起增加流速的毛细管流动的细长毛细管流动结构对。

Description

具有用于直接芯片安装的毛细管流动结构的半导体裸片
技术领域
本公开大体上涉及半导体装置，及在若干实施例中涉及具有用于直接芯片安装的毛细管流动增强结构的半导体裸片。
背景技术
例如存储器装置、微处理器及发光二极管的微电子装置通常包含安装到衬底中及围封在保护层中的一或多个半导体裸片。半导体裸片包含例如存储器单元、处理器电路、互连电路系统等的功能特征。在直接芯片安装(DCA)技术中，去除常规的装置封装。一些直接芯片安装技术包含板上芯片(COB)配置，其中半导体裸片直接安装到衬底及电互连到衬底，所述衬底例如，印刷电路板(PCB)、陶瓷衬底或玻璃陶瓷衬底等等。半导体裸片通过裸片到衬底(D2S)连接电耦合到衬底，所述连接可包含具有接合焊盘的裸片，所述接合焊盘具有经配置以安装到上下倒转的衬底的支柱及/或焊料凸块，其中裸片的前侧面向衬底(例如，倒装芯片)。当倒装芯片用于COB配置时，半导体裸片可能会进行底部填充以防止有源表面及凸块受到热机械及化学损坏，及减小可能会导致由衬底及半导体裸片的不匹配热膨胀引起的损坏的剪应力。半导体裸片使用非导电粘合底部填充材料接合到衬底。
图1A展示常规的倒装芯片半导体装置10，其包含裸片12及一或多个互连结构，例如具有焊料凸块22的D2S支柱20。图1B展示在已将其翻转之后，使得D2S支柱20及焊料凸块22与衬底50介接以形成D2S电连接的半导体装置10。衬底50与裸片12之间的间隙使用施加到间隙边缘的非导电粘合剂进行底部填充。在许多应用中，毛细管底部填充(CUF)动作通过间隙产生底部填充材料流40，使得流40通常在衬底50与裸片12之间均匀。CUF流40的流速通常限制COB制造工艺的产量。
发明内容
本公开的方面涉及一种用于直接芯片安装的半导体装置，其包括：衬底；半导体裸片，其具有从前侧延伸的导电支柱，所述半导体裸片通过所述导电支柱电耦合到所述衬底，且所述半导体裸片的所述前侧与所述衬底间隔开某一间隙；及毛细管流动结构，其具有从所述前侧朝向所述衬底突出的第一及第二细长流动元件，所述第一及第二细长流动元件彼此横向间隔开第一宽度，所述第一宽度经配置以引起底部填充材料沿着所述第一及第二细长流动元件的长度进行毛细管流动。
本公开的另一方面涉及一种用于直接芯片安装的半导体装置，其包括：衬底；半导体裸片，其具有从前侧延伸的导电支柱，所述半导体裸片通过所述导电支柱电耦合到所述衬底，且所述半导体裸片的所述前侧与所述衬底间隔开某一间隙；及第一及第二毛细管流动结构，每一者具有从所述前侧朝向所述衬底突出的第一及第二细长流动元件，所述第一及第二毛细管流动结构彼此横向间隔开第一宽度，所述第一宽度经配置以引起底部填充材料在所述第一及第二毛细管流动结构之间进行毛细管流动。
附图说明
图1A是展示根据现有技术配置的半导体裸片的放大透视图。
图1B是展示作为倒装芯片安装到衬底的图1A的半导体裸片的放大透视图。
图2A是展示具有根据本发明技术的实施例配置的互连结构及毛细管流动结构的半导体裸片的放大透视图。
图2B是展示作为倒装芯片安装到衬底的图2A的半导体裸片的放大透视图。
图3A是展示具有根据本发明技术的实施例配置的互连结构及毛细管流动结构的半导体裸片的放大透视图。
图3B是展示作为倒装芯片安装到衬底的图3A的半导体裸片的放大透视图。
图4是展示具有根据本发明技术的实施例配置的毛细管流动结构的衬底的放大透视图。
图5是包含根据本发明技术的实施例配置的半导体装置的系统的示意图。
具体实施方式
本文公开的技术涉及半导体装置、具有半导体装置的系统，及用于制造半导体装置的相关方法。术语“半导体装置”一般指包含一或多个半导体材料的固态装置。半导体装置的实例包含逻辑装置、存储器装置及二极管等等。此外，术语“半导体装置”可指成品装置或变成成品装置之前的各个处理阶段时的组合件或其它结构。
取决于使用的上下文，术语“衬底”可指支撑电子组件(例如，裸片)的结构，例如，晶片级衬底或切单的裸片级衬底。术语“衬底”也可表示用于裸片堆叠应用的另一裸片。相关领域的普通技术人员应认识到，可在晶片级或在裸片级执行本文所描述的方法的合适方面。此外，除非上下文另有指示，否则可使用常规的半导体制造技术来形成本文中所公开的结构。举例来说，材料可使用化学气相沉积、物理气相沉积、原子层沉积、旋涂、电镀及/或其它合适的技术沉积。类似地，举例来说，材料可使用等离子蚀刻、湿式蚀刻、化学-机械平坦化，或其它合适的技术移除。
本发明技术包含经配置以增强毛细管作用以在直接芯片安装处理期间增加底部填充材料的流速的结构。本发明技术的毛细管流动结构可在裸片的前侧上或在衬底的介接表面上，及其经配置以与不含毛细管流动结构的常规组合件相比，通过间隙增加底部填充材料的流速。
毛细管流动结构可通过以下方式形成于半导体裸片的表面或衬底的表面上：(a)通过光致抗蚀剂材料或硬掩模的开口来电镀毛细管流动结构的图案；(b)将预成型的毛细管结构附接到表面；(c)将材料沉积到衬底表面的凸起部分上；及其它合适的技术。尽管所说明的毛细管流动结构被示为具有延伸半导体裸片(图2A)的大部分长度的长度，但是在其它实施例中，毛细管流动结构的长度更短。在一些实施例中，可沿着半导体裸片的长度使用多个毛细管流动结构。所说明的毛细管流动结构可具有通常对应于在底部填充期间接触半导体裸片及衬底的组件之间的间隙距离的高度，或其可部分地在半导体裸片与衬底之间延伸。在这些实施例中，毛细管流动结构可适当地延伸组件之间的间隙距离的大于20％、大于40％、大于60％、大于80％，或大于90％。
图2A展示处于前侧向上配置的半导体装置110a。半导体装置110a包含半导体裸片112及从半导体裸片112的前侧111延伸的支柱120。支柱120可包含在每个支柱120的远端处的焊料凸块122，其经配置以通过焊料凸块122的回焊将半导体裸片112电耦合到衬底。支柱可由例如铜(Cu)的合适导电材料形成，及具有焊料盖以形成电连接(例如，锡-银(SnAg)焊料盖)。在组装期间，使用联合回焊、声波回焊，或其它技术回焊焊料盖。可使用掩模处理技术形成支柱。其中形成支柱的接合焊盘通常是铜，因此铜柱使用铜到铜接合技术耦合到接合焊盘。在其它实施例中，支柱可由与接合焊盘不同的材料形成，或支柱可由材料组合形成。
在一些实施例中，半导体装置110a还包含在半导体裸片112的前侧111处的毛细管流动结构130。个别毛细管流动结构130可包含从半导体裸片112的前侧111以高度H突出的第一流动131及第二流动元件132。第一流动元件131及第二流动元件132可具有厚度T及长度L。可基于以下项调整高度H、厚度T及长度L：(a)半导体裸片112的配置，(b)支柱120的高度及间隔，(c)半导体装置110a与衬底之间的所需间隙，(d)毛细管流动结构制造工艺能力，及/或(e)所需底部填充材料流速，以及其它考虑因素。
每个毛细管流动结构130的第一流动元件131及第二流动元件132可间隔开第一距离W1，使得两个相邻的毛细管流动结构130不会跨越任何支柱120。毛细管流动结构130可彼此间隔开第二距离W2，使得两个相邻的毛细管流动结构130位于至少一个支柱120的任一侧上。在许多应用中，第一距离W1可小于第二距离W2。相对距离W1及W2是裸片上可用的占据面积、支柱120的布置及增强特定底部填充材料的毛细管作用的距离的函数。举例来说，由于流体的毛细管流速通常与流体流过的通道的有效面积的大小成反比地增加，因此宽度W1及W2可经配置以与不具有毛细管流动结构130的装置相比增加底部填充材料的流速。可根据本发明技术的实施例使用任何数目的毛细管流动结构130。
第一流动元件131及第二流动元件132可由用所述类型的底部填充材料充分“润湿”的材料制成。在许多应用中，第一流动元件131及第二流动元件132可包含金属或金属合金，例如，铜或铝。在此类应用中，第一流动元件131及第二流动元件132可与半导体裸片112的导电电路系统电隔离。第一流动元件131及第二流动元件132可替代地包含硅、玻璃，或具有平滑表面的其它材料，所述平滑表面与底部填充材料良好地介接以增加毛细管力。第一流动元件131及第二流动元件132可为用底部填充材料充分润湿的固体金属、陶瓷或聚合物材料，或所述元件可具有芯及涂覆有用底部填充材料充分润湿的材料。
图2B示出直接芯片安装组合件100a，所述直接芯片安装组合件具有倒置的图2A的半导体装置110a，使得焊料凸块122与衬底150上的触点(未展示)介接。在此配置中，支柱120及焊料凸块122电连接到衬底150，及毛细管流动结构130处于衬底150与半导体裸片112之间的间隙中。在操作中，取决于毛细管流动结构130的几何形状及沿着半导体裸片112施加底部填充材料的位置，在半导体裸片112与衬底150之间的间隙中施加在半导体裸片112的周边处的底部填充材料将以不同速率流动。
垂直于长度L的施加到半导体裸片112的第一边缘152的底部填充材料将具有流速140，所述流速类似于图1B的常规技术的流速。流速140仅基于间隙尺寸，因为底部填充材料不会在第一边缘152处与毛细管流动结构130交互。
对比之下，取决于底部填充材料流过的通道的有效面积，平行于毛细管流动结构130的长度L的施加到半导体裸片112的第二边缘154的底部填充材料将具有更高流速。在与间隙的开放边缘(例如，第一边缘152)相邻的流动通道，底部填充材料将具有等于或大于流速140的流速142。在这些通道中，毛细管流动结构130的一侧影响毛细管力，从而影响流速142。在两个毛细管流动结构130跨越支柱120(即，一行支柱120在毛细管流动结构130中的两者之间)的流动通道中，底部填充材料将具有等于或大于流速142的流速144。在这些通道中，间隔开宽度W2的一个毛细管结构130的第一流动元件131及相邻毛细管结构130的第二流动元件132增加毛细管力以增加流速144。在个别流动结构130的第一流动元件131与第二流动元件132之间的流动通道中，底部填充材料将具有等于或大于流速144的流速146。在这些通道中，流速146预期为最高流速，因为第一流动元件131与第二流动元件132之间的较小第一宽度W1产生更高毛细管力以增加流速146，并且还因为第一流动元件131与第二流动元件132之间的空间不含支柱120。因此，期望本发明技术减小底部填充物以倒装芯片配置跨越面向衬底150的半导体裸片112的顶面的整个表面区域填充所需的时间。
本发明技术还进一步有助于在整个半导体裸片112的表面区域中保持半导体裸片112与衬底150之间的所需间隔。在没有毛细管流动结构130的情况下，半导体裸片112可相对于衬底150倾斜，使得一个区域在半导体裸片112与衬底150之间具有较小间隙，而另一区域具有较大间隙。这样可能会在具有小间隙的区域中引起支柱120之间的短路，及在具有较大间隙的区域中断开连接。期望毛细管流动结构130充当在半导体裸片112与衬底150之间提供均匀空间的间隔物。因此，毛细管流动结构130也增加良率。
图3A展示以前侧向上配置布置的半导体装置110b。相似附图标记是指图2A-3B中的相似组件。半导体装置110b包含半导体裸片112，所述半导体裸片具有从半导体裸片112的前侧111延伸的支柱120，及在每个支柱120的远端处的焊料凸块122。半导体装置110b可进一步包含毛细管流动结构130，其具有远离半导体裸片112的前侧111突出到高度H的第一流动元件131及第二流动元件132，且所述第一流动元件及所述第二流动元件具有厚度T及长度L。在此实施例中，第一流动元件131及第二流动元件132彼此间隔开宽度W3，使得其跨越一行支柱120。宽度W3可等于或不同于半导体装置110a的宽度W2。
图3B示出直接芯片安装组合件100b，其具有倒置的图3A的半导体装置110b，使得焊料凸块122与衬底150上的触点(未展示)介接。在此配置中，毛细管流动结构130在衬底150与半导体裸片112之间的间隙中。在与间隙的开放边缘(例如，第一边缘152)相邻的流动通道中，底部填充材料将具有等于或大于流速140，及等于或小于直接芯片安装组合件110a的流速142的流速148。在第一流动元件131与第二流动元件132之间的流动通道中，底部填充材料将具有流速149。流速149可大于流速148，但存在支柱120将至少略微阻碍第一流动元件131与第二流动元件132之间的流动。
图4展示包含远离衬底150突出的毛细管流动结构230的衬底150。毛细管流动结构230类似于图2A中的毛细管流动结构130，除了毛细管流动结构230从衬底150，而不是半导体裸片112延伸。因此，毛细管流动结构230可彼此间隔开增加毛细管流动速率的距离，及每个毛细管流动结构230可包含彼此间隔开进一步增加毛细管流动速率的距离的第一流动元件231及第二流动元件232。当半导体装置110a倒置以直接芯片安装到衬底150时，毛细管流动结构230至少部分地从衬底150延伸到半导体装置110a的前侧111。图2B中的直接芯片安装组合件的配置类似地应用于图4中所示的衬底，除了毛细管流动结构230替代毛细管流动结构130。
图2A到4的所说明支柱及毛细管流动结构配置是示例性的，及支柱及毛细管流动结构中的任一个可具有不同形状、尺寸或间隔以形成裸片与衬底之间的所需底部填充流速。
图5是说明根据本发明技术的实施例的并入有半导体装置的系统的框图。具有上文参考图2A到4所描述的特征的半导体装置中的任一个可并入到大量更大及/或更复杂的系统中的任一个中，所述系统的代表性实例是在图5中示意性地展示的系统500。系统500可包含处理器502、存储器504(例如，SRAM、DRAM、闪存及/或其它存储器装置)、输入/输出装置506，及/或其它子系统或组件508。上文参考图2A到4描述的半导体组合件、装置及装置封装可包含在图5中所示的元件中的任一个中。所得系统500可经配置以执行各种合适的计算、处理、存储、感测、成像及/或其它功能中的任一个。因此，系统500的代表性实例包含但不限于，计算机及/或其它数据处理器，例如，台式计算机、膝上型计算机、网络家电、手持式装置(例如，掌上型计算机、可穿戴式计算机、蜂窝或移动电话、个人数字助理、音乐播放器等)、平板计算机、多处理器系统、基于处理器的或可编程的消费型电子装置、网络计算机及微型计算机。系统500的额外代表性实例包含灯、相机、交通工具等。在这些及其它实例中，系统500可容纳于单个单元中或例如通过通信网络分布于多个互连单元上。因此，系统500的组件可包含本地及/或远程存储器存储装置及各种合适的计算机可读媒体中的任一个。
本发明技术包含优于常规的倒装芯片底部填充过程的若干优点。本发明技术的毛细管流动结构配置增加底部填充材料的毛细管流动动作。在一些实施例中，本发明技术允许(a)由于沿着毛细管流动结构的更高底部填充材料流速而引起的更快倒装芯片底部填充处理，(b)增加的接合表面积及机械抓握以改进半导体裸片到衬底的粘附性，及(c)减少将半导体裸片安装到衬底所需的底部填充材料的量。所说明的实施例描绘使用本发明技术的毛细管流动结构配置的半导体装置的实例；然而，毛细管流动结构的其它装置配置在本发明技术的范围内。
如在前面的描述中所使用，鉴于图中所示的定向，术语“垂直”，“横向”，“上部”及“下部”可指代半导体装置中的特征的相对方向或位置。举例来说，“上部”或“最上部”可指比另一特征更接近页面的顶部定位的特征。然而，这些术语应广泛地理解为包含具有其它定向的半导体装置，所述定向例如倒置或倾斜定向，其中顶部/底部、上面/下面、上方/下方、向上/向下、左侧/右侧，及远端/近端可取决于定向而互换。此外，为了易于参考，贯穿本公开，相同附图标记用于标识类似或相似组件或特征，但使用相同附图标记并不暗示特征应理解为相同的。实际上，在本文中所描述的许多实例中，相同编号的特征具有结构及/或功能彼此不同的多个实施例。此外，除非本文中具体地标注，否则相同着色可用于指示横截面中的可在成分上类似的材料，但使用相同着色并不暗示材料应理解为相同的。
前述公开内容还可参考数量及数目。除非特别说明，否则不应将这些数量及数目视为限制性的，而应作为与新技术相关的可能数量或数目的示例。而且，就此而言，本公开可使用术语“多个”指代数量或数目。就此而言，术语“多个”表示大于一，例如，二、三、四、五等的任何数目。出于本公开的目的，短语“A、B和C中的至少一个”例如表示(A)、(B)、(C)、(A及B)、(A及C)、(B及C)，或(A、B及C)，包含列出多于三个元素时的所有进一步可能的排列。
从前述内容中应了解，尽管本文中已经出于说明的目的描述了新技术的特定实施例，但是可在不偏离本公开的情况下进行各种修改。因此，本发明不受除所附权利要求书之外的限制。此外，在具体实施例的上下文中描述的新技术的某些方面还可在其它实施例中组合或去除。此外，尽管已经在那些实施例的上下文中描述了与新技术的某些实施例相关联的优点，但其它实施例也可显示此类优点，且并非所有的实施例都要显示此类优点以落入本公开的范围内。因此，本公开及相关联的技术可涵盖未明确地在本文中展示或描述的其它实施例。

Claims (19)

1.一种用于直接芯片安装的半导体装置，其包括：
衬底；
半导体裸片，其具有从前侧延伸的导电支柱，所述半导体裸片通过所述导电支柱电耦合到所述衬底，且所述半导体裸片的所述前侧与所述衬底间隔开某一间隙；及
毛细管流动结构，其具有从所述前侧朝向所述衬底突出的第一及第二细长流动元件，所述第一及第二细长流动元件彼此横向间隔开第一宽度，所述第一宽度经配置以引起底部填充材料沿着所述第一及第二细长流动元件的长度进行毛细管流动。
2.根据权利要求1所述的半导体装置，其中当所述半导体裸片电耦合到所述衬底时，所述第一及第二细长流动元件接触所述衬底。
3.根据权利要求1所述的半导体装置，其中所述第一及第二流动元件的表面、所述衬底及所述半导体裸片的所述前侧形成第一通道，所述底部填充材料从引起的毛细管流动行进通过所述第一通道。
4.根据权利要求3所述的半导体装置，其中所述第一通道不含支柱，并且其中在所述第一通道内引起的毛细管流动速率高于所述间隙内在所述第一通道外部的引起的毛细管流动速率。
5.根据权利要求3所述的半导体装置，其中所述导电支柱在所述第一通道内部，并且其中在所述第一通道内引起的毛细管流动速率高于所述间隙内在所述第一通道外部的引起的毛细管流动速率。
6.根据权利要求1所述的半导体装置，其进一步包括具有从所述前侧朝向所述衬底突出的第一及第二细长流动元件的第二毛细管流动结构，所述第二毛细管流动结构的所述第一及第二毛细管流动元件中的每一个彼此横向间隔开第二宽度，所述第二宽度经配置以引起底部填充材料沿着所述第二毛细管流动结构的所述第一及第二细长流动元件的长度进行毛细管流动。
7.根据权利要求6所述的半导体装置，其中：
所述第一毛细管流动结构的所述第一及第二细长流动元件的表面、所述衬底及所述半导体裸片的所述前侧形成第一通道，所述底部填充材料从引起的毛细管流动行进通过所述第一通道，
所述第二毛细管流动结构的所述第一及第二细长流动元件的表面、所述衬底及所述半导体裸片的所述前侧形成第二通道，所述底部填充材料从引起的毛细管流动行进通过所述第二通道，及
所述第一及第二毛细管流动结构的相对外表面、所述衬底及所述半导体裸片的所述前侧形成第三通道，所述底部填充材料从引起的毛细管流动行进通过所述第三通道。
8.根据权利要求7所述的半导体装置，其中在所述第一及第二通道内引起的毛细管流动速率高于在所述第三通道内引起的毛细管流动速率。
9.根据权利要求7所述的半导体装置，其中在所述第三通道内引起的毛细管流动速率高于所述间隙内在所述第一、第二及第三通道外部的引起的毛细管流动速率。
10.一种用于直接芯片安装的半导体装置，其包括：
衬底；
半导体裸片，其具有从前侧延伸的导电支柱，所述半导体裸片通过所述导电支柱电耦合到所述衬底，且所述半导体裸片的所述前侧与所述衬底间隔开某一间隙；及
第一及第二毛细管流动结构，每一者具有从所述前侧朝向所述衬底突出的第一及第二细长流动元件，所述第一及第二毛细管流动结构彼此横向间隔开第一宽度，所述第一宽度经配置以引起底部填充材料在所述第一及第二毛细管流动结构之间进行毛细管流动。
11.根据权利要求10所述的半导体装置，其中当所述半导体裸片电耦合到所述衬底时，所述第一及第二毛细管流动结构接触所述衬底。
12.根据权利要求10所述的半导体装置，其中所述第一毛细管流动结构的所述第一及第二细长流动元件彼此横向间隔开第二宽度，并且其中所述第二毛细管流动结构的所述第一及第二细长流动元件彼此间隔开第三宽度。
13.根据权利要求12所述的半导体装置，其中所述第一宽度大于所述第二及第三宽度。
14.根据权利要求10所述的半导体装置，其中所述第一毛细管流动结构的所述第一及第二细长流动元件、所述衬底及所述半导体裸片的所述前侧形成第一通道，所述底部填充材料从引起的毛细管流动行进通过所述第一通道，并且其中所述第二毛细管流动结构的所述第一及第二细长流动元件、所述衬底及所述半导体裸片的所述前侧形成第二通道，所述底部填充材料从引起的毛细管流动行进通过所述第二通道。
15.根据权利要求14所述的半导体装置，其中所述第一及第二通道不含支柱，并且其中在所述第一及第二通道中的任一个内引起的毛细管流动速率高于所述间隙内在所述第一通道外部的引起的毛细管流动速率。
16.根据权利要求14所述的半导体装置，其中所述第一及第二毛细管流动结构的相对外表面、所述衬底及所述半导体裸片的所述前侧形成第三通道，所述底部填充材料从引起的毛细管流动行进通过所述第三通道。
17.根据权利要求16所述的半导体装置，其中所述导电支柱在所述第一通道内部，并且其中在所述第一通道内引起的毛细管流动速率高于所述间隙内在所述第一通道外部的引起的毛细管流动速率。
18.根据权利要求16所述的半导体装置，其中在所述第一及第二通道内引起的毛细管流动速率高于在所述第三通道内引起的毛细管流动速率。
19.根据权利要求16所述的半导体装置，其中在所述第三通道内引起的毛细管流动速率高于所述间隙内在所述第一、第二及第三通道外部的引起的毛细管流动速率。
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