CN112992688A - 制造半导体设备的方法、对应的装置和半导体设备 - Google Patents
制造半导体设备的方法、对应的装置和半导体设备 Download PDFInfo
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Abstract
本公开的实施例涉及制造半导体设备的方法、对应的装置和半导体设备。引线框架具有裸片焊盘区域和具有第一氧化电位的第一金属的外层。引线框架被放置与包含第二金属的溶液接触,第二金属具有第二氧化电位,第二氧化电位比第一氧化电位更负。然后,辐射能量被施加到与溶液接触的引线框架的裸片焊盘区域,以引起引线框架的温度的局部增加。由于温度增加,通过电置换反应将所述第二金属的层选择性地提供在引线框架的裸片焊盘区域处。然后执行引线框架的外层的氧化以提供增强层,该增强层抵抗设备封装的分层。
Description
优先权要求
本申请要求于2019年12月02日提交的意大利专利申请号102019000022641的优先权,其内容在法律允许的最大范围内通过引用以其整体并入于此。
技术领域
本描述涉及制造半导体设备。
一个或多个实施例可以应用于制造集成电路(IC)。
背景技术
为封装的半导体设备提供改进的封装分层(delamination)抗性代表了制造半导体设备(例如,用于汽车领域)中一个正在增长的趋势。
可以利用制备过程来实现高封装分层抗性,在该制备过程中,引线框架的顶层(例如,银层)被提供(例如,涂覆)有所谓的增强层,该增强层的材料与封装模制化合物(例如,环氧模制化合物)具有更高的亲和力。
注意,覆盖引线框架的增强层的存在可能会负面地影响引线框架表面的润湿性,可能对软焊料裸片附接过程(即经由软焊料附接材料,将半导体裸片附接在引线框架的裸片焊盘区域上的过程)具有不利影响。
尽管在该领域中有广泛的活动,但仍期望进一步改进的解决方案。
本领域需要提供这种改进的解决方案。
发明内容
一个或多个实施例可以涉及一种方法。
一个或多个实施例可以涉及一种对应的装置。
一个或多个实施例可以涉及一种对应的半导体设备(例如,集成电路)。
一个或多个实施例可以涉及:在经由氧化反应形成增强层之前,经由通过光(例如,激光)辐射增强的电置换反应,在引线框架的裸片焊盘区域上(选择性)沉积贵金属层(例如,金)。
一个或多个实施例可依赖于以下认识:在增强层的形成期间,裸片焊盘区域处的贵金属(例如金)的层将不会被氧化(或仅被轻微地氧化),从而保持了裸片焊盘区域的可湿性,这有助于软焊料裸片的附接。
附图说明
现在将参考附图,仅通过示例的方式描述一个或多个实施例,其中:
图1是适于根据实施例被制造的半导体设备的示例性表示,以及
图2是可能的制造步骤的示例。
具体实施方式
在随后的描述中,说明了一个或多个具体细节,旨在提供对本描述的实施例的示例的深入理解。可以在没有一个或多个特定细节的情况下,或在其他方法、组件、材料等的情况下获得实施例。在其他情况下,未详细示出或描述已知的结构、材料或操作,因此实施例的某些方面将不要被遮盖。
在本描述的框架中对“实施例”或“一个实施例”的引用旨在指示相对于该实施例描述的特定配置、结构或特性被包括在至少一个实施例中。因此,可以在本描述的一个或多个点中出现的诸如“在实施例中”或“在一个实施例中”的短语不一定指代同一个实施例。此外,在一个或多个实施例中,可以以任何适当的方式来组合特定的构造、结构或特性。
贯穿本文所附的附图,相同的部件或元件用相同的附图标记/数字指示,并且为了简洁起见将不再重复对应的描述。
本文使用的附图标记仅出于方便而被提供,并且因此不定义保护的程度或实施例的范围。
图1是在平面(俯视)图中观察到的诸如集成电路(IC)的半导体设备10的示意性表示。
如本领域中当前已知的,连同在图中不可见的其他元件/特征,如本文例示的设备10可以包括所谓的引线框架12,引线框架12具有(例如,中心)裸片焊盘区域14,并且包括(至少)一个半导体芯片或裸片16,半导体芯片或裸片16经由软焊料过程被附接到引线框架12的裸片焊盘区域14上。
当前,使用名称“引线框架(leadframe)”(或“引线框架(leadframe)”)(例如,参见美国专利商标局USPC术语的合并词汇表)来指示为集成电路芯片或裸片提供支持以及电引线,以将裸片或芯片中的集成电路互连到其他电子组件或接触的金属框架。
本质上,引线框架包括导电构造(引线)的阵列,导电构造(引线)从轮廓位置在半导体芯片或裸片的方向上向内延伸,从而从裸片焊盘形成导电构造的阵列,裸片焊盘被配置成使至少一个半导体芯片或裸片附接在其上。
封装18可以被模制到被附接到引线框架12的裸片焊盘区域14上的一个或多个半导体裸片16上,以提供设备封装,该设备封装在引线框架12中具有引线的外部(远端)尖端,外部(远端)尖端从封装18突出。
如图1中例示的半导体设备10的一般结构和制造过程(包括提供各种附加元件,诸如将引线框架的引线耦合到一个或多个半导体裸片的接线键合等,在图中不可见)是本领域技术人员众所周知的,这使得本文不需要提供更详细的描述。
用于制造诸如本文例示的半导体设备10的设备的常规解决方案可以涉及以金属材料(诸如铜)的(带状)条的形式提供引线框架12。这种条可以包括多个分段12。这些分段中的每个分段包括相应的裸片焊盘区域14,相应的半导体裸片可以被附接到相应的裸片焊盘区域14上。
带状结构的各个分段可以在模制相应的封装18之前或之后最终被分离(“分割”)以提供单独的设备。
实施如前所述的过程的常规解决方案涉及在引线框架12的金属材料(例如铜)上形成所谓的增强层,该增强层与模制化合物18具有更高的亲和力,模制化合物18最终被模制到引线框架12和附接在其上的一个或多个半导体裸片上。
常规地,这种模制化合物可以包括树脂材料,诸如环氧树脂模制化合物(EMC,环氧模制化合物)。
提供增强层可以涉及在引线框架12的基础材料(例如,诸如铜的金属)上提供另一种材料(例如,诸如银的金属)的涂层,该涂层被处理以形成增强层。例如,根据被指定为NEAP 4.0(NEAP=非腐蚀粘合促进剂)的处理工艺,通过对银层进行氧化来在银涂层之上形成氧化银(AgOx)的上层
如前所述,在促进与封装化合物的良好粘合的同时,发现增强层不利地影响了一个或多个半导体裸片16在引线框架12的裸片焊盘区域14上的附接过程。
即使在这方面不希望受到任何特定理论的束缚,增强层(氧化银)也可以负面影响软焊料附接材料对引线框架材料(被银涂覆的铜)的“润湿性”。
Pb95%/Sn5%或有时1-2%的Ag和Sn平衡剂的组分可以是这种软焊料附接材料的示例。
为了保持裸片焊盘区域14的令人满意的润湿性,一个或多个实施例可以涉及:在执行银层的氧化以形成增强层(其可以包括例如羟基化的氧化银)之前,在裸片焊盘区域14处的引线框架12的银涂层之上,选择性地沉积贵金属(例如,从钯(Pd)、铂(Pt)和金(Au)中选择的金属,优选金)的层。
常规地,可以通过使用掩模(机械或光致抗蚀剂)实现金属层在某些区域上的选择性的沉积。这种常规方法的缺点是产量低、材料(例如光致抗蚀剂)的成本高以及需要专用工具。
为了减轻这种缺点,在一个或多个实施例中,可以通过凭借电置换反应,在所选择的区域用诸如金的贵金属涂覆(例如,镀覆)银涂覆的引线框架。特别地,注意,将一块银(或银涂覆的物体,诸如引线框架12)浸入到含有Au+离子的溶液中,金趋于涂覆银的表面,并且一些银以Ag+离子的形式被溶解到溶液中(即发生金属置换反应)。Nernst公式E=E0+nRT·ln(Ox/Red)或者E=E0+0.059·Log(Ox/Red)描述了电置换中涉及的氧化还原反应的热力学。注意,温度在决定电置换反应的动力学中起重要作用。
如图2中所例示的,在一个或多个实施例中,可以在低温处(例如,大约3℃至8℃,优选大约5℃),将要用金选择性涂覆(例如,镀覆)的银涂覆引线框架12浸入到金络合物(例如,具有高的游离氰化物含量)的水溶液S(例如,被包含在容器或器具C中)中。在低温处,电置换反应(金还原与银氧化)的动力学非常慢,从而导致金的沉积几乎可以忽略不计。
一个或多个实施例可以预期:穿过水溶液S在待镀覆的区域(即,引线框架12的裸片焊盘区域14)上扫描合适波长(例如,532nm)和脉冲持续时间(例如,在微秒范围内)的激光束LB。例如,激光束LB可以由激光源LS产生,并且通过反射镜M被向所选择的区域14引导。
在一个或多个实施例中,激光束LB的脉冲持续时间和/或功率和/或总曝光时间可以被调谐,以导致以大约5mJ/mm2至500mJ/mm2(优选大约100mJ/mm2)的量将辐射能量施加到引线框架12的裸片焊盘区域14上。
因此,在引线框架12的所选择的区域上扫描激光束LB可以导致基础材料(即金属引线框架)和相邻的水溶液体积V的温度的局部增加,这有利于实现电化学条件,该电化学条件导致通过与次贵金属(例如,银)的电置换反应(更剧烈)沉积更贵金属(例如,金)。例如,在一个或多个实施例中,引线框架12的温度可以局部地增加(例如,仅在裸片焊盘区域14处)到大约15℃至65℃之间的温度,优选地大约50℃。
在一个或多个实施例中,可以选择激光波长以避免水溶液的高吸收。例如,在一个或多个实施例中,辐射可以被溶液S吸收小于约30%,或甚至更少。这可以促进增加基础金属(即,引线框架12的基础金属)的温度并且将热量传递至溶液,而不是相反。
在包含金粒子(离子)的水溶液的示例性情况下,应当避免波长落在典型的金盐溶液(即黄色)的光谱内。另外,水分子可以提供在红外范围内的吸收,因此也应当避免。因此,在一个或多个示例性实施例中,针对激光束LB可以选择具有495nm至570nm(优选,520nm至540nm,更优选为532nm)波长的“绿色”辐射。这种绿色辐射可以通过倍频的Nd-Yag固态激光器获得。
在一个或多个实施例中,由于在未被激光辐射照射的区域上的残留置换反应,(非常薄的)金层也可以被镀覆在引线框架12的不需要的区域上(例如,在裸片焊盘区域14的外部)。可以在这种区域上执行温和的后剥离,以去除(薄)不期望的金层。
在一个或多个实施例中,可以对激光源LS进行编程(例如,经由软件)以仅在引线框架12的某些所选择的区域(例如,裸片焊盘区域14)上扫描激光束。
因此,一个或多个实施例在降低集成电路的制造成本方面可能是有利的(例如,因为不需要掩模步骤)。
一个或多个实施例可以被应用于引线框架12的三维部分上,在三维部分处不能实施掩模。
在一个或多个实施例中,在通过由激光增强的电置换反应,利用贵金属涂覆裸片焊盘区域14之后,可以对引线框架12进行氧化处理以在引线框架12的其余部分上提供氧化银增强层,从而保持裸片焊盘区域14对软焊料附接材料的润湿性。
如本文所例示的,一种制造半导体设备(例如,10)的方法可以包括:
-提供具有裸片焊盘区域(例如,14)的引线框架(例如,12),该引线框架包括具有第一氧化电位的第一金属的外层,
-使所述引线框架与包含第二金属的溶液(例如,水溶液S)接触,第二金属具有第二氧化电位,第二氧化电位比第一氧化电位更负,
-将辐射能量(例如,光束或激光束LB)施加到与所述溶液接触的引线框架的裸片焊盘区域,以局部增加引线框架的温度,其中所述第二金属的层通过电置换反应在引线框架的裸片焊盘区域处选择性地被提供,
-通过氧化引线框架的所述外层而在所述引线框架上提供增强层,增强层抵抗设备封装分层,
-经由软焊料裸片附接材料将至少一个半导体裸片(例如,16)附接到所述裸片焊盘区域上,以及
-通过将封装材料模制到至少一个半导体裸片上来形成设备封装(例如,18),至少一个半导体裸片被附接到引线框架的所述裸片焊盘区域上。
如本文所例示的,溶液的温度可以为约3℃至8℃,优选为约5℃。
如本文所例示的,溶液可以包括所述第二金属的金属络合物和/或金属离子。
如本文所例示的,辐射能量可以包括处于被溶液吸收小于大约30%的波长的激光辐射。
如本文所例示的,引线框架的所述外层的第一金属可以包括银,并且所述溶液可以包含选自包括钯、铂和金的组中的至少一种第二金属。
如本文所例示的,第二金属可以包括金,并且辐射能量可以包括处于约495nm至570nm(优选大约520nm至540nm,更优选约532nm)的波长的激光辐射。
如本文所例示的,通过将所述辐射能量施加到裸片焊盘区域上,可以将引线框架的温度局部地增加到约15℃至65℃,优选地约50℃。
如本文所例示的,可以以大约5mJ/mm2至500mJ/mm2(优选大约100mJ/mm2)的量,将辐射能量施加在引线框架的裸片焊盘区域上。
如本文所例示的,可以执行后剥离以从引线框架的除裸片焊盘区域之外的区域去除所述第二金属的所述层。
如本文所例示的,一种装置可以包括:
-容器(例如,C),被配置成维持(maintain)引线框架以与包含所述第二金属的溶液接触,以及
-辐射能量源(例如,LS),被配置成将辐射能量束扫描到所述容器中的所述引线框架的裸片焊盘区域上,以局部地增加引线框架的温度,其中所述第二金属的层通过电置换反应在引线框架的裸片焊盘区域处选择性地被提供。
如本文所例示的,半导体设备可以包括:
-具有裸片焊盘区域的引线框架,
-至少一个半导体裸片,
-软焊料裸片附接材料,其将所述至少一个半导体裸片附接到所述裸片焊盘区域上,
-封装材料的设备封装,该封装材料被模制到被附接到引线框架的所述裸片焊盘区域上的至少一个半导体裸片上,
其中:
-引线框架包括第一金属的外层,第一金属具有第一氧化电位,
-由于电置换反应,引线框架的裸片焊盘区域被提供有第二金属的层,第二金属具有比第一氧化电位更负的第二氧化电位,
-引线框架的所述外层被氧化以在所述引线框架上提供增强层,增强层抵抗设备封装分层,其中引线框架的所述裸片焊盘区域至少部分地被免除所述增强层,并且
-软焊料裸片附接材料将至少一个半导体裸片附接到所述裸片焊盘区域上,软焊料裸片附接材料被提供在被免除所述增强层的、引线框架的裸片焊盘区域位置。
在不影响基本原理的情况下,细节和实施例可以相对于仅通过示例描述的内容进行变化,甚至显著变化,而不背离保护的范围。
权利要求是本文关于实施例提供的技术教导的组成部分。
保护范围由所附权利要求限定。
Claims (25)
1.一种制造方法,包括:
将引线框架与溶液接触,其中所述引线框架具有裸片焊盘区域、以及由具有第一氧化电位的第一金属制成的外层,所述溶液包含具有第二氧化电位的第二金属,所述第二氧化电位比所述第一氧化电位更负;
将辐射能量施加到与所述溶液接触的所述引线框架的所述裸片焊盘区域,以局部增加所述引线框架的温度,从而导致所述第二金属的层通过电置换反应在所述裸片焊盘区域处的选择性的提供;以及
氧化所述引线框架的所述外层,以在所述引线框架上提供增强层。
2.根据权利要求1所述的方法,其中所述增强层抵抗设备封装的分层。
3.根据权利要求1所述的方法,还包括:
使用软焊料裸片附接材料,将半导体裸片附接到在所述裸片焊盘区域处的所述第二金属的所述层;以及
通过将封装材料模制到所述半导体裸片上来形成设备封装,所述半导体裸片被附接到所述引线框架的所述裸片焊盘区域上。
4.根据权利要求1所述的方法,其中所述溶液具有3℃至8℃的温度。
5.根据权利要求1所述的方法,其中所述溶液包括以下至少一项:所述第二金属的金属络合物或所述第二金属的金属离子。
6.根据权利要求1所述的方法,其中所述辐射能量包括处于被所述溶液吸收小于30%的波长的激光辐射。
7.根据权利要求1所述的方法,其中所述引线框架的所述外层的所述第一金属包括银,并且所述溶液包含选自由钯、铂和金组成的组中的至少一种第二金属。
8.根据权利要求1所述的方法,其中所述第二金属包括金,并且其中所述辐射能量包括处于495nm至570nm的波长的激光辐射。
9.根据权利要求8所述的方法,其中所述波长在520nm和540nm之间。
10.根据权利要求9所述的方法,其中所述波长是532nm。
11.根据权利要求1所述的方法,其中通过将所述辐射能量施加到所述裸片焊盘区域上的温度的所述局部增加是增加到15℃至65℃的温度水平。
12.根据权利要求11所述的方法,其中所述温度水平是50℃。
13.根据权利要求1所述的方法,其中所述辐射能量以5mJ/mm2至500mJ/mm2的量被施加到所述引线框架的所述裸片焊盘区域上。
14.根据权利要求13所述的方法,其中所述辐射能量为100mJ/mm2。
15.根据权利要求1所述的方法,还包括执行后剥离,以从所述引线框架的除所述裸片焊盘区域之外的区域移除所述第二金属的所述层。
16.一种用于在引线框架的裸片焊盘区域处选择性地提供第二金属的层的装置,所述引线框架包括第一金属的外层,其中所述第二金属的氧化电位比所述第一金属的氧化电位更负,所述装置包括:
容器,被配置成接纳所述引线框架以与溶液接触,所述溶液包含所述第二金属;以及
辐射能量源,被配置成将辐射能量束扫描到所述容器中的所述引线框架的所述裸片焊盘区域上,所述辐射能量束引起所述引线框架的温度的局部增加,从而导致所述第二金属的层通过电置换反应在所述裸片焊盘区域处的选择性的提供。
17.根据权利要求16所述的装置,其中所述第二金属包括金,并且其中所述辐射能量包括处于495nm至570nm的波长的激光辐射。
18.根据权利要求17所述的装置,其中所述波长在520nm和540nm之间。
19.根据权利要求18所述的装置,其中所述波长是532nm。
20.根据权利要求16所述的装置,其中所述溶液具有3℃至8℃的温度。
21.根据权利要求16所述的装置,其中所述溶液包括以下至少一项:所述第二金属的金属络合物或所述第二金属的金属离子。
22.根据权利要求16所述的装置,其中所述第一金属包括银,并且所述溶液包含选自由钯、铂和金组成的组中的至少一种第二金属。
23.根据权利要求16所述的装置,其中通过将所述辐射能量施加在所述裸片焊盘区域上的温度的所述局部增加是增加到15℃至65℃的温度水平。
24.根据权利要求23所述的装置,其中所述温度水平是50℃。
25.根据权利要求16所述的装置,其中所述辐射能量以5mJ/mm2至500mJ/mm2的量被施加在所述引线框架的所述裸片焊盘区域上。
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CN202011403687.5A Pending CN112992688A (zh) | 2019-12-02 | 2020-12-02 | 制造半导体设备的方法、对应的装置和半导体设备 |
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US (2) | US11610849B2 (zh) |
EP (1) | EP3832702B1 (zh) |
CN (1) | CN112992688A (zh) |
IT (1) | IT201900022641A1 (zh) |
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CN114531774A (zh) * | 2022-02-21 | 2022-05-24 | 京东方科技集团股份有限公司 | 一种柔性电路板、制作方法和显示装置 |
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IT201900009501A1 (it) * | 2019-06-19 | 2020-12-19 | St Microelectronics Srl | Procedimento di die attachment per dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente |
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US7691679B2 (en) * | 2007-03-23 | 2010-04-06 | Asm Assembly Materials Ltd. | Pre-plated leadframe having enhanced encapsulation adhesion |
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US9059185B2 (en) * | 2013-07-11 | 2015-06-16 | Texas Instruments Incorporated | Copper leadframe finish for copper wire bonding |
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- 2019-12-02 IT IT102019000022641A patent/IT201900022641A1/it unknown
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2020
- 2020-11-30 EP EP20210552.4A patent/EP3832702B1/en active Active
- 2020-12-01 US US17/108,187 patent/US11610849B2/en active Active
- 2020-12-02 CN CN202011403687.5A patent/CN112992688A/zh active Pending
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2023
- 2023-03-14 US US18/121,145 patent/US20230215819A1/en active Pending
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US4239789A (en) * | 1979-05-08 | 1980-12-16 | International Business Machines Corporation | Maskless method for electroless plating patterns |
KR20110029901A (ko) * | 2009-09-16 | 2011-03-23 | 주식회사 제이미크론 | 레이저를 이용한 부분 도금 장치 및 부분 도금 방법 |
US20130025745A1 (en) * | 2011-07-27 | 2013-01-31 | Texas Instruments Incorporated | Mask-Less Selective Plating of Leadframes |
CN102925938A (zh) * | 2012-09-14 | 2013-02-13 | 中国科学院半导体研究所 | 一种对激光镀层进行处理的系统 |
US20190157196A1 (en) * | 2017-11-21 | 2019-05-23 | Shinko Electric Industries Co., Ltd. | Lead frame and semiconductor device |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN114531774A (zh) * | 2022-02-21 | 2022-05-24 | 京东方科技集团股份有限公司 | 一种柔性电路板、制作方法和显示装置 |
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US20230215819A1 (en) | 2023-07-06 |
US20210167022A1 (en) | 2021-06-03 |
US11610849B2 (en) | 2023-03-21 |
IT201900022641A1 (it) | 2021-06-02 |
EP3832702B1 (en) | 2023-06-28 |
EP3832702A1 (en) | 2021-06-09 |
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