CN112979335B - 氮化铝多孔隙原料的制备方法 - Google Patents

氮化铝多孔隙原料的制备方法 Download PDF

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CN112979335B
CN112979335B CN202110170597.4A CN202110170597A CN112979335B CN 112979335 B CN112979335 B CN 112979335B CN 202110170597 A CN202110170597 A CN 202110170597A CN 112979335 B CN112979335 B CN 112979335B
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Abstract

氮化铝多孔隙原料的制备方法,它涉及一种氮化铝的制备方法。本发明是为了解决生长氮化铝单晶晶体的氮化铝原料孔隙率不高的技术问题。本方法如下:采用两块铝板作夹具,制粉料薄片,在粉料薄片上钻出小孔,高温加热,放入坩埚内分别在1300℃、1700℃、2100℃的条件下保温,保温过程结束,开始降温,同时充入氮气,至炉内压力达到745‑750Torr后停止并保压,降温过程为3h,即得氮化铝多孔隙原料。本发明构成陶瓷体的各个粉料薄片上均有孔洞,堆叠在一起形成上下贯通的管路,薄片与薄片之间是经过马弗炉加热后堆叠在一起,之间必然留有间隙。这些都大大提高了原料陶瓷体的孔隙率和表面积。本发明属于氮化铝原料的制备领域。

Description

氮化铝多孔隙原料的制备方法
技术领域
本发明涉及一种氮化铝的制备方法。
背景技术
氮化铝属于第三代半导体材料。它具有高禁带宽度、高热导率、高电子漂移速率、高化学稳定性的特点。由于其具有良好的物理性能,所以在高温、高频、高功率器件和深紫外光电子器件等方面均具有广阔的应用前景。
生长氮化铝单晶晶体时所用的原料一般是氮化铝粉末形成的陶瓷体。实验过程中由于坩埚轴向存在温度梯度,氮化铝原料在高温下分解形成的气态组分会在温度梯度的作用下被传递到生长室另一侧温度相对较低的籽晶区域,在籽晶表面有序沉积逐渐形成氮化铝单晶晶体。氮化铝原料陶瓷体的表面积越大,内部孔隙率越高,越有利于氮化铝气态组分生成。因此,制备出孔隙率较高的氮化铝多孔隙原料,是生长高质量氮化铝单晶晶体的重要步骤。
发明内容
本发明的目的是为了解决生长氮化铝单晶晶体的氮化铝原料孔隙率不高的技术问题,提供了一种氮化铝多孔隙原料的制备方法。
本发明的氮化铝多孔隙原料的制备方法按照以下步骤进行:
一、采用两块边为60mm、厚为20mm的正方形铝板作夹具,在一块铝板上均匀铺放氮化铝粉料,氮化铝粉料高度为5-6mm,将另一块铝板盖在氮化铝粉料上方,上下两块铝板对齐,放在单柱液压机的工作台上,施加20MPa的压力,将粉料高度压缩到2-3mm,保持1小时,摘掉两块铝板,将压制成型的粉料修成直径55mm、厚度2-3mm的粉料薄片,采用1.5mm的钻头在粉料薄片上钻出15-20个镂空小孔,放入马弗炉中,在1000℃下高温加热5小时;
二、将25-30个经过步骤一处理的粉料薄片边缘对齐、孔洞对齐,堆叠放置,取2英寸碳化钽坩埚,口朝下将所有粉料薄片罩进去,再将碳化钽坩埚翻转,在坩埚口盖上2英寸碳化钽片;
三、将经过步骤二处理的碳化钽坩埚放入石墨加热器和石墨保温结构中,感应加热炉内真空度为10-3Pa的条件下,在1.5h内将温度加热至1300℃,在1300℃保温30min,然后充入氮气,至炉内压力达到745-750Torr后停止充气并保压,充气保压的同时,在2h内将温度升至1700℃,在1700℃保温1h,然后在1h内升温2100℃,温度达到2100℃后开始保温,同时将炉内压力抽至670Torr并保压,整个保温过程时间为30-50h;
四、保温过程结束,开始降温,同时充入氮气,至炉内压力达到745-750Torr后停止并保压,降温过程为3h,即得氮化铝多孔隙原料。
原料的作用是在高温下分解出氮化铝气态组分,由于坩埚中各部分温度的不同,气态组分被传递到籽晶的位置,沉积长出晶体。原料要求纯净,氮化铝的粉料会含有氢、氧等杂质元素,最初的粉料不能直接来生长氮化铝单晶,这就是为何要先将氮化铝粉料高温下烧结的原因,烧结后形成质地坚硬,但内部含有纵向的密集的细小的孔隙通道,这些孔隙是在原料处和坩埚盖处温度不同造成原料气态组分从下到上分解输运后留下的,而这些孔隙也有利于生长晶体时原料分解出的气态组分能够快速充分地被传输到籽晶处。
本发明在制备作为原料的氮化铝多孔隙陶瓷体的过程中,不会引入其他杂质,保证了氮化铝原料的纯度。
本发明的多孔氮化铝原料是专门为使用PVT法生长氮化铝单晶晶体制备的。创新点在于使用物理方法制备最初的原料部分,不使用其他粘结剂,这些原料最初就设计制作成多孔的结构,构成陶瓷体的各个粉料薄片上均有孔洞,在堆叠成整体时,在一起形成上下贯通的管路,薄片与薄片之间是经过马弗炉加热后堆叠在一起,之间必然留有间隙。会进一步增大烧结后原料陶瓷结构的孔隙率和表面积,在坩埚中有尽可能多的表面可以提供氮化铝气态组分充分挥发和转移。比起普通方法制备的氮化铝原料陶瓷,不仅在原料纯度上可以达到99.9999%的标准,而且陶瓷体的表面积也能增大30%左右,可以提高长晶的效率。
本发明的方法制备工艺简单,易于操作,制备成本低,可以得到高质量的氮化铝。
具体实施方式
本发明技术方案不局限于以下所列举具体实施方式,还包括各具体实施方式间的任意组合。
具体实施方式一:本实施方式氮化铝多孔隙原料的制备方法按照以下步骤进行:
一、采用两块边为60mm、厚为20mm的正方形铝板作夹具,在一块铝板上均匀铺放氮化铝粉料,氮化铝粉料高度为5-6mm,将另一块铝板盖在氮化铝粉料上方,上下两块铝板对齐,放在单柱液压机的工作台上,施加20MPa的压力,将粉料高度压缩到2-3mm,保持1小时,摘掉两块铝板,将压制成型的粉料修成直径55mm、厚度2-3mm的粉料薄片,采用1.5mm的钻头在粉料薄片上钻出15-20个镂空小孔,放入马弗炉中,在1000℃下高温加热5小时;
二、将25-30个经过步骤一处理的粉料薄片边缘对齐、孔洞对齐,堆叠放置,取2英寸碳化钽坩埚,口朝下将所有粉料薄片罩进去,再将碳化钽坩埚翻转,在坩埚口盖上2英寸碳化钽片;
三、将经过步骤二处理的碳化钽坩埚放入石墨加热器和石墨保温结构中,感应加热炉内真空度为10-3Pa的条件下,在1.5h内将温度加热至1300℃,在1300℃保温30min,然后充入氮气,至炉内压力达到745-750Torr后停止充气并保压,充气保压的同时,在2h内将温度升至1700℃,在1700℃保温1h,然后在1h内升温2100℃,温度达到2100℃后开始保温,同时将炉内压力抽至670Torr并保压,整个保温过程时间为30-50h;
四、保温过程结束,开始降温,同时充入氮气,至炉内压力达到745-750Torr后停止并保压,降温过程为3h,即得氮化铝多孔隙原料。
具体实施方式二:本实施方式与具体实施方式一不同的是步骤二中将28个经过步骤一处理的粉料薄片边缘对齐、孔洞对齐,堆叠放置。其他与具体实施方式一相同。
具体实施方式三:本实施方式与具体实施方式一或二不同的是步骤三中在1300℃保温30min,然后充入氮气,至炉内压力达到746Torr后停止充气并保压。其他与具体实施方式一或二相同。
具体实施方式四:本实施方式与具体实施方式一至三之一不同的是步骤三中在1300℃保温30min,然后充入氮气,至炉内压力达到747Torr后停止充气并保压。其他与具体实施方式一至三之一相同。
具体实施方式五:本实施方式与具体实施方式一至四之一不同的是步骤三中在1300℃保温30min,然后充入氮气,至炉内压力达到748Torr后停止充气并保压。其他与具体实施方式一至四之一相同。
具体实施方式六:本实施方式与具体实施方式一至五之一不同的是步骤三中将炉内压力抽至670Torr并保压,整个保温过程时间为32-48h。其他与具体实施方式一至五之一相同。
具体实施方式七:本实施方式与具体实施方式一至六之一不同的是步骤三中将炉内压力抽至670Torr并保压,整个保温过程时间为35-45h。其他与具体实施方式一至六之一相同。
具体实施方式八:本实施方式与具体实施方式一至七之一不同的是步骤三中将炉内压力抽至670Torr并保压,整个保温过程时间为40h。其他与具体实施方式一至七之一相同。
具体实施方式九:本实施方式与具体实施方式一至八之一不同的是步骤四中至炉内压力达到748Torr后停止并保压。其他与具体实施方式一至八之一相同。
具体实施方式十:本实施方式与具体实施方式一至九之一不同的是步骤四中至炉内压力达到749Torr后停止并保压。其他与具体实施方式一至九之一相同。

Claims (10)

1.氮化铝多孔隙原料的制备方法,其特征在于所述氮化铝多孔隙原料的制备方法按照以下步骤进行:
一、采用两块边为60mm、厚为20mm的正方形铝板作夹具,在一块铝板上均匀铺放氮化铝粉料,氮化铝粉料高度为5-6mm,将另一块铝板盖在氮化铝粉料上方,上下两块铝板对齐,放在单柱液压机的工作台上,施加20MPa的压力,将粉料高度压缩到2-3mm,保持1小时,摘掉两块铝板,将压制成型的粉料修成直径55mm、厚度2-3mm的粉料薄片,采用1.5mm的钻头在粉料薄片上钻出15-20个镂空小孔,放入马弗炉中,在1000℃下高温加热5小时;
二、将25-30个经过步骤一处理的粉料薄片边缘对齐、孔洞对齐,堆叠放置,取2英寸碳化钽坩埚,口朝下将所有粉料薄片罩进去,再将碳化钽坩埚翻转,在坩埚口盖上2英寸碳化钽片;
三、将经过步骤二处理的碳化钽坩埚放入石墨加热器和石墨保温结构中,感应加热炉内真空度为10-3Pa的条件下,在1.5h内将温度加热至1300℃,在1300℃保温30min,然后充入氮气,至炉内压力达到745-750Torr后停止充气并保压,充气保压的同时,在2h内将温度升至1700℃,在1700℃保温1h,然后在1h内升温2100℃,温度达到2100℃后开始保温,同时将炉内压力抽至670Torr并保压,整个保温过程时间为30-50h;
四、保温过程结束,开始降温,同时充入氮气,至炉内压力达到745-750Torr后停止并保压,降温过程为3h,即得氮化铝多孔隙原料。
2.根据权利要求1所述氮化铝多孔隙原料的制备方法,其特征在于步骤二中将28个经过步骤一处理的粉料薄片边缘对齐、孔洞对齐,堆叠放置。
3.根据权利要求1所述氮化铝多孔隙原料的制备方法,其特征在于步骤三中在1300℃保温30min,然后充入氮气,至炉内压力达到746Torr后停止充气并保压。
4.根据权利要求1所述氮化铝多孔隙原料的制备方法,其特征在于步骤三中在1300℃保温30min,然后充入氮气,至炉内压力达到747Torr后停止充气并保压。
5.根据权利要求1所述氮化铝多孔隙原料的制备方法,其特征在于步骤三中在1300℃保温30min,然后充入氮气,至炉内压力达到748Torr后停止充气并保压。
6.根据权利要求1所述氮化铝多孔隙原料的制备方法,其特征在于步骤三中将炉内压力抽至670Torr并保压,整个保温过程时间为32-48h。
7.根据权利要求1所述氮化铝多孔隙原料的制备方法,其特征在于步骤三中将炉内压力抽至670Torr并保压,整个保温过程时间为35-45h。
8.根据权利要求1所述氮化铝多孔隙原料的制备方法,其特征在于步骤三中将炉内压力抽至670Torr并保压,整个保温过程时间为40h。
9.根据权利要求1所述氮化铝多孔隙原料的制备方法,其特征在于步骤四中至炉内压力达到748Torr后停止并保压。
10.根据权利要求1所述氮化铝多孔隙原料的制备方法,其特征在于步骤四中至炉内压力达到749Torr后停止并保压。
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