CN112951849A - 显示面板及其制备方法 - Google Patents
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/1201—Manufacture or treatment
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
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Abstract
本申请公开了一种显示面板及其制备方法,所述显示面板包括显示区以及设置于所述显示区一侧的非显示区,其特征在于,所述非显示区内设有弯折区和绑定区,所述弯折区被配置为所述显示区与所述绑定区之间,所述弯折区包括:基板层;金属走线层,设置于所述基板层上;以及第一平坦化层,设置于所述金属走线层上;其中,所述基板层远离所述金属走线层的表面上设有凹槽,所述凹槽的槽壁沿曲面或平面延伸至连接于所述凹槽的槽底,并使得所述凹槽的槽底在所述基板层上的正投影落入所述凹槽的槽口在所述基板层上的正投影区域的内部。通过在该显示面板弯折区的基板层上设置特定形状的凹槽,可有效提升显示面板弯折区的弯折良率,并保证较优的弯折效果。
Description
技术领域
本发明涉及技术领域,具体涉及一种显示面板及其制备方法。
背景技术
随着显示技术的快速发展,显示面板逐渐朝着轻薄化、高屏占比、窄边框乃至无边框发展,尤其对于小尺寸显示面板,例如应用于手机的显示面板,该发展趋势尤为明显。显示面板的下边框通常需要放置多种电路组件,如:源极驱动电路、时序控制电路、触控控制电路、检测电路等,并且需要与柔性电路板(Flexible Printed Circuit,FPC)进行绑定,基于FPC和电路组件的走线排布限制,制约了显示面板窄边框的发展。
以手机为例,手机的显示面板通常包括显示区以及设置于显示区底部的非显示区,该非显示区内设有弯折区和绑定区,绑定区内设有集成多种电路功能的驱动芯片以及用于与FPC进行绑定的端子。为了实现窄边框,现有技术采用端子弯折(Pad Bending,PB)工艺通过弯折区将绑定区弯折至显示区的背面,可以理解的是,弯折区的弯折半径越小,显示面板的下边框的宽度越窄。然而,弯折区通常包括金属走线层,弯折区的弯折半径越小,金属走线层所受的弯折应力越大,出现金属走线断裂问题的风险越大,因此,现有技术中弯折区的弯折半径缩小的范围有限,造成显示面板的下边框的宽度缩窄幅度受限。
发明内容
针对现有技术的不足之处,本申请提供了一种显示面板及其制备方法,可有效提升显示面板弯折区的弯折良率,并保证较优的弯折效果。
第一方面,本申请提供了一种显示面板,所述显示面板包括显示区以及设置于所述显示区一侧的非显示区,其特征在于,所述非显示区内设有弯折区和绑定区,所述弯折区被配置为所述显示区与所述绑定区之间,所述弯折区包括:
基板层;
金属走线层,设置于所述基板层上;以及
第一平坦化层,设置于所述金属走线层上;
其中,所述基板层远离所述金属走线层的表面上设有凹槽,所述凹槽的槽壁沿曲面或平面延伸至连接于所述凹槽的槽底,并使得所述凹槽的槽底在所述基板层上的正投影落入所述凹槽的槽口在所述基板层上的正投影区域的内部。
进一步地,所述凹槽的槽口在所述基板层上的正投影边界超出所述凹槽的槽底在所述基板层上的正投影边界的距离与所述凹槽深度的比值大于等于10:1。
进一步地,所述凹槽的槽壁与槽底之间通过圆角过渡连接。
进一步地,所述弯折区还包括支撑层,设置于所述基板层远离所述金属走线层的一侧,所述支撑层与所述凹槽相对应的位置处设有开口腔,所述开口腔的腔口在所述基板层上的正投影覆盖所述凹槽的槽口在所述基板层上的正投影。
进一步地,所述开口腔的腔壁为由所述凹槽内至外方向倾斜的斜面。
进一步地,所述基板层包括层叠设置的第一有机层、无机层以及第二有机层,其中,所述第一有机层设置于远离所述金属走线层的一侧,且所述凹槽设置于所述第一有机层远离所述金属走线层的一侧。
进一步地,所述凹槽的深度与所述第一有机层的厚度的比值为(0.4-0.5):1。
进一步地,所述弯折区包括弯折部,所述弯折部设置于所述凹槽的槽底对应的区域内。
第二方面,本申请提供了一种显示面板的制备方法,所述制备方法包括如下步骤:
提供一基板层,在所述基板层上预定义显示区以及位于显示区一侧的非显示区,在所述非显示区内预定义弯折区和绑定区,所述弯折区被预定义为所述显示区与所述绑定区之间;
在所述弯折区的所述基板层上制备形成所述金属走线层;
在所述金属走线层上制备形成所述第一平坦化层;
提供一支撑层,对所述支撑层进行预切割;
将完成预切割的所述支撑层贴附于所述弯折区的所述基板层远离所述金属走线层的一侧上,然后剥离预切割位置处的支撑层材料以形成开口腔,所述弯折区的所述基板层部分裸露于所述开口腔;以及
对裸露于所述开口腔的所述基板层进行薄化处理以形成凹槽;
其中,所述凹槽的槽壁沿曲面或平面延伸至连接于所述凹槽的槽底,并使得所述凹槽的槽底在所述基板层上的正投影落入所述凹槽的槽口在所述基板层上的正投影区域的内部;所述开口腔的腔口在所述基板层上的正投影覆盖所述凹槽的槽口在所述基板层上的正投影。
进一步地,所述薄化处理是采用激光工艺进行,其中,激光波长为340纳米至360纳米。
有益效果:本发明提供了一种显示面板及其制备方法,所述显示面板包括弯折区,所述弯折区包括:基板层;金属走线层,设置于所述基板层上;以及第一平坦化层,设置于所述金属走线层上;其中,所述基板层远离所述金属走线层的表面上设有凹槽,所述凹槽的槽壁沿曲面或平面延伸至连接于所述凹槽的槽底,并使得所述凹槽的槽底在所述基板层上的正投影落入所述凹槽的槽口在所述基板层上的正投影区域的内部。在该显示面板中,第一方面,通过在基板层远离所述金属走线层的表面开设凹槽,即相当于减薄了基板层的厚度,从而将弯折区膜层结构中受应力最大的金属走线层调节至中性层,可有效释放金属走线层的弯折应力,大大降低金属走线发生断裂的风险;另一方面,还针对所述凹槽槽壁的形状进行了特殊的设计,使得弯折时所述凹槽槽壁处应力缓慢变化,降低应力集中风险,提升弯折后基板层品质。由此,通过在基板层开设特定形状的凹槽,可有效提升显示面板弯折区的弯折良率,并保证较优的弯折品质。
附图说明
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是本发明实施例提供的一种显示面板的平面结构示意图;
图2是本发明实施例提供的一种显示面板的截面结构示意图;
图3是本发明实施例提供的另一种显示面板的截面结构示意图;
图4是本发明实施例提供的一种显示面板的弯折结构示意图;
图5是本发明实施例提供的另一种显示面板的截面结构示意图;
图6是本发明实施例提供的另一种显示面板的截面结构示意图;
图7是本发明实施例提供的另一种显示面板的截面结构示意图;
图8是本发明实施例提供的另一种显示面板的截面结构示意图;
图9是本发明实施例提供的另一种显示面板的截面结构示意图;
图10是本发明实施例提供的一种显示面板的制备方法的文字流程示意图;
图11a-11f是本发明实施例提供的一种显示面板的制备方法的结构流程示意图;
图12是本发明现有技术提供的一种显示面板的制备方法导致的不良结构示意图。
具体实施方式
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
在本发明的描述中,需要理解的是,术语“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。
本申请实施例提供了一种显示面板,该显示面板可以是液晶显示(LiquidCrystal Display,LCD)面板、有机发光二极管显示(Organic Light Emitting Display,OLED)面板等类型。如图1所示,显示面板包括显示区11以及设置于显示区11一侧的非显示区12,非显示区12内设有弯折区13和绑定区14,弯折区13被配置为显示区11和绑定区14之间。在本申请中,通过端子弯折(Pad Bending,PB)工艺可将弯折区13弯折,从而将绑定区14设置于显示区11的背面,以实现窄边框。
弯折区13用于实现将绑定区14设置于显示区11的背面,弯折区13与绑定区14相邻设置,并且弯折区13与绑定区14相连。
图2示出了弯折区的一个实施例的截面结构示意图,弯折区主要包括基板层131、金属走线层132以及第一平坦化层133,其中,金属走线层132设置于基板层131的一侧,第一平坦化层133设置于金属走线层132远离基板层131的一侧。
其中,基板层131远离所述金属走线层132一侧的表面上设有凹槽G,使得所述基板层131厚度减薄,进而使得弹性模量最大的金属走线层132更靠近弯折中性层,以减少弯折区13弯折时金属走线层12受到的弯折应力,进而降低出现金属走线断裂问题的风险。
补充说明的是,材料在弯曲过程中,外层受拉伸,内层受挤压,在其断面上必然会有一个既不受拉,又不受压的过渡层,应力几乎等于零,这个过渡层称为上述的中性层。
另外,在本申请一个实施例中,请继续参阅图2,所述凹槽G的槽壁G1沿平面延伸直至连接于所述凹槽G的槽底G2,并使得所述凹槽G的槽底G2在所述基板层131上的正投影落入所述凹槽G的槽口G3在所述基板层131上的正投影区域的内部,即,所述槽壁G1为倾斜于所述槽底G2的平面,相较直接垂直于所述槽底G2,从所述槽壁G1过渡至所述槽底G2的形状变化更平缓,从而使得在弯折时,所述凹槽的槽壁G1中应力过渡平缓,避免因应力集中导致部分位置应力过大,而造成弯折不良的问题出现。
进一步地,在本申请另一实施例中,提供了另一种显示面板,其截面结构如图3所示,大体的结构与前一实施例类似,区别仅在与将所述凹槽G的槽壁G1进行了调整,具体地,所述凹槽G的槽壁G1沿曲面延伸直至连接于所述凹槽G的槽底G2,并使得所述凹槽G的槽底G2在所述基板层131上的正投影落入所述凹槽G的槽口G3在所述基板层131上的正投影区域的内部,即,所述槽壁G1为向所述基板层131内部凹陷的圆滑曲面,相较于前一实施例的倾斜平面,本实施例中所述槽壁G1的形状变化的更为平缓,使得弯折时应力也更为平缓地过渡,则更有效地避免了因应力集中导致部分位置应力过大的问题,从而可提升显示面板弯折区的弯折良率,并保证较优的弯折效果。
在本实施例中和,所述基板层131可以是单层结构,也可以是多层结构。
所述金属走线层132可以是单层结构,也可以是多层结构。金属走线层132的材料可以是金(Au)、银(Ag)、钛(Ti)、铜(Cu)、镍(Ni)、铂(Pt)、钯(Pd)、铝(Al)、钼(Mo)等单种金属材料,也可以是诸如铝(Al):钕(Nd)合金、钼(MO):钨(W)合金等的合金材料,也可以是具有导电性能的金属氧化物。通常情况下,所述弯折区的金属走线层132与显示区的源漏电极以及数据线同层形成。
所述第一平坦化层可以是单层结构,也可以是多层结构。第一平坦化层的材料不作具体限定,采用本领域常用的平坦化材料即可。
进一步地,经发明人验证,所述凹槽G的槽壁G1倾斜的坡度更平缓,越有利于均匀有效地吸收和释放弯折应力而避免应力集中,具体请继续参阅图2或图3,当将所述凹槽G的槽口G3在所述基板层131上的正投影边界超出所述凹槽G的槽底G2在所述基板层131上的正投影边界的距离ΔW与所述凹槽深度D的比值大于等于10:1,根据所述凹槽深度D,进而设定所述ΔW的大小,通常,所述ΔW大于等于50微米,于此同时,所述凹槽G的槽壁G1与水平方向的夹角θ约小于等于6°时,可获得预期的弯折良率以及弯折品质。
具体弯折时,请参阅图4,将上述显示面板中弯折区的功能结构层130,即包括前述的基板层131、金属走线层132以及第一平坦化层133,进行弯折,再将弯折区两端的支撑层135通过胶层136粘附固定,由此,在显示面板的侧边形成一个圆弧状的弯折边框,而通过本实施例的结构设计,可使得该弯折边框的曲率半径R做到0.35毫米以下,从而有利于实现窄边框显示。
在本申请的另一实施例中,请参阅图5提供的截面结构示意图,由于当所述槽壁G1为倾斜于所述槽底G2的平面时,所述槽壁G1与所述槽底G2的交界处会形成一个较为尖锐的拐角,此拐角处由于形状变化较大,在弯折时,应力易集中在此处,为避免此问题,在本实施例中,将所述槽壁G1与所述槽底G2通过圆角过渡连接,从而释放此处的弯折应力,有利于获得较高的弯折良率以及弯折品质。
可以理解的是,当所述凹槽的槽壁沿曲面延伸直至连接于所述凹槽的槽底时,所述槽壁会自然地以圆角过渡连接于所述槽底。
在本申请的另一实施例中,请参阅图5提供的截面结构示意图,所述弯折区还包括支撑层135,设置于所述基板层131远离所述金属走线层132的一侧,所述支撑层135可以是单层结构,也可以是多层结构,并至少包括刚性结构,刚性结构的材料可以是金属,例如铜,从而实现对显示面板提供支撑作用,同时,所述支撑层132与所述凹槽G相对应的位置处设有开口腔C,所述开口腔C的腔口在所述基板层上的正投影覆盖所述凹槽G的槽口在所述基板层上的正投影。
进一步地,所述开口腔C的腔壁C1可以是垂直于所述凹槽G槽底的平直面,即如图6所示,所述开口腔C的腔壁C1还可以是由所述凹槽G内至外方向倾斜的斜面,即如图7所示,经验证,当所述开口腔C的腔壁C1为斜面时,更有利于弯折时所述支撑层135腔壁C1处的应力释放,
当然,所述开口腔C的腔壁C1也可为曲面或其他形态,本发明对此不作具体限定,仅需满足开口腔C腔口在基板层131上的正向投影覆盖凹槽G槽口在基板层131上的正向投影即可。此外,开口腔C的数量不作具体限定,可以是一个,也可以是多个,仅需满足开口腔C与凹槽G一一对应即可。
在本申请另一个实施例中,请继续参阅图2或图3,所述基板层131为多层结构,其由第一有机层1311、无机层1312以及第二有机层1313组成,其中,第一有机层1311设置于远离所述金属走线层132的一侧,无机层1312设置于第一有机层1311上,第二有机层1313设置于无机层1312和金属走线层132之间。
第一有机层1311和第二有机层1313的材料可以是聚酰亚胺、聚碳酸酯、聚醚砜、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、多芳基化合物、玻璃纤维增强塑料等高分子材料,示例第一有机层1311和第二有机层1313的材料均为聚酰亚胺。无机层1312的材料可以是氧化硅(SiOx)。第一有机层1311、无机层1312以及第二有机层1313的厚度不作具体限定,可以依据实际需要自行选择。
其中,所述凹槽G设置于所述第一有机层1311远离所述金属走线层132的一侧,且,所述凹槽G仅开设于所述第一有机层1311中,如此,即可使得所述金属走线层132处于或接近于弯折区膜层的中性层。
具体地,所述凹槽G的深度D与所述第一有机层1311的厚度的比值为(0.4-0.5):1,在实际的应用中,根据具体的工艺需求,在此范围中进行设定。
在本申请另一个实施例中,请继续参阅图8所示的截面结构,所述弯折区还包括第二平坦层134,设置于所述基板层131和所述金属走线层132之间,所述第二平坦层包括无机平坦层1341以及有机平坦层1342,所述无机平坦层1341在与所述凹槽G相对应的位置处开设有通孔1343,所述有机平坦层1342设置于通孔1343内,使得所述无机平坦层1341的顶部和有机平坦层1342的顶部相齐平,其中,所述无机平坦层1341即为与显示面板显示区中与栅极绝缘层以及层间绝缘层等绝缘层同层形成的无机膜层,但由于无机膜层的应力相对较大,弯折时以产生裂纹,因此,在需弯折的区域去除该无机膜层形成通孔,并填充应力较小的有机膜层,有利于获得较高的弯折良率以及弯折品质。
本领域技术人员可以理解的是,弯折区根据需求还可以包括其他层结构,在此不作具体限定。
在本申请另一个实施例中,请参阅图9所示的截面结构示意图,所述弯折区包括弯折部137,所述弯折部137设置于所述凹槽的槽底G2对应的区域内,由所述弯折部137进行弯折,形成如图3所示结构,其中,通过将所述弯折部137避开所述凹槽的槽壁设置,可有效降低弯折时所述凹槽的槽壁处所受应力,有利于获得较高的弯折良率以及弯折品质。
在本申请另一个实施例中,还提供了一种显示面板的制备方法,以下结合图10提供的该制备方法的文字流程示意图以及图11a-11f提供的该制备方法的文字结构示意图,进行详细描述。
具体地,所述制备方法包括如下步骤:
S10:提供一基板层131,在所述基板层上预定义显示区以及位于显示区一侧的非显示区,在所述非显示区内预定义弯折区和绑定区,所述弯折区被预定义为所述显示区与所述绑定区之间,其中,所述基板层可以是单层结构,也可以是多层结构,此处,所述基板层131包括第一有机层1311、无机层1312以及第二有机层1313,即形成如图11a所示的结构;
S20:在所述弯折区的所述基板层131上制备形成所述金属走线层132,即形成如图11b所示的结构;
S30:在所述金属走线层132上制备形成所述第一平坦化层133,即形成如图11c所示的结构;
S40:提供一支撑层135,对所述支撑层135进行预切割;
S50:将完成预切割的所述支撑层135贴附于所述弯折区的所述基板层131远离所述金属走线层132的一侧上,即形成如图11d所示的结构,然后剥离预切割位置处的支撑层材料以形成开口腔C,所述弯折区的所述基板层1311部分裸露于所述开口腔C,即形成如图11e所示的结构;以及
S60:对裸露于所述开口腔C的所述基板层131进行薄化处理以形成凹槽G,即形成如图11f所示的结构;
其中,所述凹槽G的槽壁G1沿曲面或平面延伸至连接于所述凹槽G的槽底G2,并使得所述凹槽G的槽底G2在所述基板层131上的正投影落入所述凹槽G的槽口在所述基板层131上的正投影区域的内部;所述开口腔C的腔口在所述基板层131上的正投影覆盖所述凹槽G的槽口在所述基板层上的正投影。
由本实施例所提供的制备方法制备而得的显示面板,第一方面,通过在基板层远离所述金属走线层的表面开设凹槽,即相当于减薄了基板层的厚度,从而将弯折区膜层结构中受应力最大的金属走线层调节至中性层,可有效释放金属走线层的弯折应力,大大降低金属走线发生断裂的风险;另一方面,还针对所述凹槽槽壁的形状进行了特殊的设计,使得弯折时所述凹槽槽壁处应力缓慢变化,降低应力集中风险,提升弯折后基板层品质。由此,通过在基板层开设特定形状的凹槽,可有效提升显示面板弯折区的弯折良率,并保证较优的弯折效果。
在本申请另一个实施例中,在所述步骤S60中,所述薄化处理是采用激光工艺对需要减薄的区域扫描,烧蚀去除部分膜层,而形成预定形状的所述凹槽,其中,激光波长为340纳米至360纳米。
此处,所述激光的波长对所形成的凹槽的形状有着关键的影响,特别是当所述基板层为多层结构时,要求第一有机层1311对该波长激光的吸收率较高,而无机层1312对该波长激光的吸收率较低,即该特定波长的激光对第一有机层1311以及无机层1312的薄化速度有着较高的选择比,否则易出现图12所示的不良,激光透过所述第一有机层1311到达所述无机层1312,并烧蚀掉部分的无机层1312,使得第一有机层1311与所述无机层1312之间的界面发生剥离,从而造成弯折不良。
另外,所使用的激光的加工频率大于等于500KHz,扫描速度大于等于800mm/s以及光斑线距为2-10um。
在上述实施例中,对各个实施例的描述都各有侧重,某个实施例中没有详述的部分,可以参见上文其他实施例中的详细描述,此处不再赘述。
以上对本申请实施例所提供的显示面板及其制备方法进行了详细介绍,本文中应用了具体个例对本发明的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本发明的方法及其核心思想;同时,对于本领域的技术人员,依据本发明的思想,在具体实施方式及应用范围上均会有改变之处,综上所述,本说明书内容不应理解为对本发明的限制。
Claims (10)
1.一种显示面板,其特征在于,所述显示面板包括显示区以及设置于所述显示区一侧的非显示区,其特征在于,所述非显示区内设有弯折区和绑定区,所述弯折区被配置为所述显示区与所述绑定区之间,所述弯折区包括:
基板层;
金属走线层,设置于所述基板层上;以及
第一平坦化层,设置于所述金属走线层上;
其中,所述基板层远离所述金属走线层的表面上设有凹槽,所述凹槽的槽壁沿曲面或平面延伸至连接于所述凹槽的槽底,并使得所述凹槽的槽底在所述基板层上的正投影落入所述凹槽的槽口在所述基板层上的正投影区域的内部。
2.根据权利要求1所述的显示面板,其特征在于,所述凹槽的槽口在所述基板层上的正投影边界超出所述凹槽的槽底在所述基板层上的正投影边界的距离与所述凹槽深度的比值大于等于10:1。
3.根据权利要求1所述的显示面板,其特征在于,所述凹槽的槽壁与槽底之间通过圆角过渡连接。
4.根据权利要求1所述的显示面板,其特征在于,所述弯折区还包括支撑层,设置于所述基板层远离所述金属走线层的一侧,所述支撑层与所述凹槽相对应的位置处设有开口腔,所述开口腔的腔口在所述基板层上的正投影覆盖所述凹槽的槽口在所述基板层上的正投影。
5.根据权利要求1所述的显示面板,其特征在于,所述开口腔的腔壁为由所述凹槽内至外方向倾斜的斜面。
6.根据权利要求1至5任一项中所述的显示面板,其特征在于,所述基板层包括层叠设置的第一有机层、无机层以及第二有机层,其中,所述第一有机层设置于远离所述金属走线层的一侧,且所述凹槽设置于所述第一有机层远离所述金属走线层的一侧。
7.根据权利要求6所述的显示面板,其特征在于,所述凹槽的深度与所述第一有机层的厚度的比值为(0.4-0.5):1。
8.根据权利要求1所述的显示面板,其特征在于,所述弯折区包括弯折部,所述弯折部设置于所述凹槽的槽底对应的区域内。
9.一种显示面板的制备方法,其特征在于,所述制备方法包括如下步骤:
提供一基板层,在所述基板层上预定义显示区以及位于显示区一侧的非显示区,在所述非显示区内预定义弯折区和绑定区,所述弯折区被预定义为所述显示区与所述绑定区之间;
在所述弯折区的所述基板层上制备形成所述金属走线层;
在所述金属走线层上制备形成所述第一平坦化层;
提供一支撑层,对所述支撑层进行预切割;
将完成预切割的所述支撑层贴附于所述弯折区的所述基板层远离所述金属走线层的一侧上,然后剥离预切割位置处的支撑层材料以形成开口腔,所述弯折区的所述基板层部分裸露于所述开口腔;以及
对裸露于所述开口腔的所述基板层进行薄化处理以形成凹槽;
其中,所述凹槽的槽壁沿曲面或平面延伸至连接于所述凹槽的槽底,并使得所述凹槽的槽底在所述基板层上的正投影落入所述凹槽的槽口在所述基板层上的正投影区域的内部;所述开口腔的腔口在所述基板层上的正投影覆盖所述凹槽的槽口在所述基板层上的正投影。
10.根据权利要求9所述的制备方法,其特征在于,所述薄化处理是采用激光工艺进行,其中,激光波长为340纳米至360纳米。
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