CN112837996B - 一种薄层二维材料的制备方法 - Google Patents
一种薄层二维材料的制备方法 Download PDFInfo
- Publication number
- CN112837996B CN112837996B CN202110007651.3A CN202110007651A CN112837996B CN 112837996 B CN112837996 B CN 112837996B CN 202110007651 A CN202110007651 A CN 202110007651A CN 112837996 B CN112837996 B CN 112837996B
- Authority
- CN
- China
- Prior art keywords
- solvent
- dimensional material
- layer
- thin
- adhesive tape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title claims abstract description 103
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000002904 solvent Substances 0.000 claims abstract description 82
- 238000000034 method Methods 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000002390 adhesive tape Substances 0.000 claims abstract description 34
- 230000008569 process Effects 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 19
- 230000005669 field effect Effects 0.000 claims description 18
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 8
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 6
- SYBYTAAJFKOIEJ-UHFFFAOYSA-N 3-Methylbutan-2-one Chemical compound CC(C)C(C)=O SYBYTAAJFKOIEJ-UHFFFAOYSA-N 0.000 claims description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 6
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 claims description 6
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 claims description 6
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 claims description 6
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 claims description 6
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 6
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 claims description 5
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 4
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 claims description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 4
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 4
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 claims description 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims description 4
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 4
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 claims description 4
- 235000019253 formic acid Nutrition 0.000 claims description 4
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 claims description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 4
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- MBNMGGKBGCIEGF-UHFFFAOYSA-N 1,1-diethoxypropane Chemical compound CCOC(CC)OCC MBNMGGKBGCIEGF-UHFFFAOYSA-N 0.000 claims description 3
- HEWZVZIVELJPQZ-UHFFFAOYSA-N 2,2-dimethoxypropane Chemical compound COC(C)(C)OC HEWZVZIVELJPQZ-UHFFFAOYSA-N 0.000 claims description 3
- JWUJQDFVADABEY-UHFFFAOYSA-N 2-methyltetrahydrofuran Chemical compound CC1CCCO1 JWUJQDFVADABEY-UHFFFAOYSA-N 0.000 claims description 3
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- NHTMVDHEPJAVLT-UHFFFAOYSA-N Isooctane Chemical compound CC(C)CC(C)(C)C NHTMVDHEPJAVLT-UHFFFAOYSA-N 0.000 claims description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 3
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 claims description 3
- JVSWJIKNEAIKJW-UHFFFAOYSA-N dimethyl-hexane Natural products CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 claims description 3
- GJRQTCIYDGXPES-UHFFFAOYSA-N iso-butyl acetate Natural products CC(C)COC(C)=O GJRQTCIYDGXPES-UHFFFAOYSA-N 0.000 claims description 3
- FGKJLKRYENPLQH-UHFFFAOYSA-M isocaproate Chemical compound CC(C)CCC([O-])=O FGKJLKRYENPLQH-UHFFFAOYSA-M 0.000 claims description 3
- OQAGVSWESNCJJT-UHFFFAOYSA-N isovaleric acid methyl ester Natural products COC(=O)CC(C)C OQAGVSWESNCJJT-UHFFFAOYSA-N 0.000 claims description 3
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 claims description 3
- 239000003208 petroleum Substances 0.000 claims description 3
- 229940090181 propyl acetate Drugs 0.000 claims description 3
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 claims description 3
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims description 3
- UKDOTCFNLHHKOF-FGRDZWBJSA-N (z)-1-chloroprop-1-ene;(z)-1,2-dichloroethene Chemical group C\C=C/Cl.Cl\C=C/Cl UKDOTCFNLHHKOF-FGRDZWBJSA-N 0.000 claims description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 claims description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 claims description 2
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 claims description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
- VUIWJRYTWUGOOF-UHFFFAOYSA-N 2-ethenoxyethanol Chemical compound OCCOC=C VUIWJRYTWUGOOF-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- 229940093475 2-ethoxyethanol Drugs 0.000 claims description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 2
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 claims description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 2
- WBJINCZRORDGAQ-UHFFFAOYSA-N formic acid ethyl ester Natural products CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 claims description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N hexane Substances CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 2
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 claims description 2
- 229940011051 isopropyl acetate Drugs 0.000 claims description 2
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 claims description 2
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 claims description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 2
- 229960002415 trichloroethylene Drugs 0.000 claims description 2
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 claims description 2
- 239000008096 xylene Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 70
- 239000002356 single layer Substances 0.000 abstract description 4
- 230000001988 toxicity Effects 0.000 abstract 1
- 231100000419 toxicity Toxicity 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 9
- MPMSMUBQXQALQI-UHFFFAOYSA-N cobalt phthalocyanine Chemical compound [Co+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 MPMSMUBQXQALQI-UHFFFAOYSA-N 0.000 description 8
- 239000002086 nanomaterial Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- YLGQLQSDQXOIBI-UHFFFAOYSA-N (29h,31h-phthalocyaninato(2-)-n29,n30,n31,n32)platinum Chemical compound [Pt+2].[N-]1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)[N-]3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 YLGQLQSDQXOIBI-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- WDEQGLDWZMIMJM-UHFFFAOYSA-N benzyl 4-hydroxy-2-(hydroxymethyl)pyrrolidine-1-carboxylate Chemical compound OCC1CC(O)CN1C(=O)OCC1=CC=CC=C1 WDEQGLDWZMIMJM-UHFFFAOYSA-N 0.000 description 4
- 238000000879 optical micrograph Methods 0.000 description 4
- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910021593 Copper(I) fluoride Inorganic materials 0.000 description 2
- XXLJNWABHZTVSW-UHFFFAOYSA-M F[Zn] Chemical compound F[Zn] XXLJNWABHZTVSW-UHFFFAOYSA-M 0.000 description 2
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- CWSCMEBPTGNWML-UHFFFAOYSA-M [Co]Cl Chemical compound [Co]Cl CWSCMEBPTGNWML-UHFFFAOYSA-M 0.000 description 2
- XKIOPUMAGMHKJQ-UHFFFAOYSA-M [Co]F Chemical compound [Co]F XKIOPUMAGMHKJQ-UHFFFAOYSA-M 0.000 description 2
- YOZLIRXGGCQRQT-UHFFFAOYSA-M [Fe]Cl Chemical compound [Fe]Cl YOZLIRXGGCQRQT-UHFFFAOYSA-M 0.000 description 2
- DJCVNLGYSGMROR-UHFFFAOYSA-M [Fe]F Chemical compound [Fe]F DJCVNLGYSGMROR-UHFFFAOYSA-M 0.000 description 2
- ZXYNGLRGFYLTQZ-UHFFFAOYSA-M [Zn]Cl Chemical compound [Zn]Cl ZXYNGLRGFYLTQZ-UHFFFAOYSA-M 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- BMRUOURRLCCWHB-UHFFFAOYSA-M copper(i) fluoride Chemical compound [Cu]F BMRUOURRLCCWHB-UHFFFAOYSA-M 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical group [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- VXPJDNUYRJQRRC-UHFFFAOYSA-N 2,3-dimethylhexacene-1,4-dione Chemical compound C1=CC=C2C=C(C=C3C(C=C4C=C5C(=O)C(C)=C(C(C5=CC4=C3)=O)C)=C3)C3=CC2=C1 VXPJDNUYRJQRRC-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- TWVGAEQMWFGWDX-UHFFFAOYSA-N acetylene;thiophene Chemical group C#C.C=1C=CSC=1 TWVGAEQMWFGWDX-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- ROUIDRHELGULJS-UHFFFAOYSA-N bis(selanylidene)tungsten Chemical compound [Se]=[W]=[Se] ROUIDRHELGULJS-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- NKDDWNXOKDWJAK-UHFFFAOYSA-N dimethoxymethane Chemical compound COCOC NKDDWNXOKDWJAK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- WKMKTIVRRLOHAJ-UHFFFAOYSA-N oxygen(2-);thallium(1+) Chemical compound [O-2].[Tl+].[Tl+] WKMKTIVRRLOHAJ-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- OGEZSLXPCKHGKO-UHFFFAOYSA-N ptcdi-ph Chemical compound O=C1C(C2=C34)=CC=C3C(C=35)=CC=C(C(N(C=6C=CC=CC=6)C6=O)=O)C5=C6C=CC=3C4=CC=C2C(=O)N1C1=CC=CC=C1 OGEZSLXPCKHGKO-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 229910003438 thallium oxide Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Thin Film Transistor (AREA)
Abstract
本发明涉及一种薄层二维材料的制备方法,包括以下步骤:1)在基板上滴加第一溶剂,得到第一溶剂层;2)利用胶带粘黏二维材料,并将粘黏有二维材料的胶带粘贴在含有第一溶剂层的基板上,使二维材料与第一溶剂层接触;3)向胶带下面注入第二溶剂;4)进行热处理;5)剥离胶带,得到粘附于基板上的薄层二维材料。与现有技术相比,本发明制备的薄层二维材料面积大、厚度薄、产率高,而且操作过程简单、无需大型制膜设备,工艺涉及的辅料均为实验室常见常用溶剂,无明显毒性。相比于传统溶剂剥离法,本发明明显提高了获得少层甚至是单层二维材料的概率,提升了制备材料的质量。
Description
技术领域
本发明属于二维材料技术领域,涉及一种薄层二维材料的制备方法。
背景技术
以石墨烯为代表的二维纳米结构材料是纳米家族中的重要一员,占有举足轻重的位置。与其他纳米结构相比,二维纳米结构具有比表面积大、表面载流子传输速率高、力电性能优异等特点,凭借这些优势,这种类型的材料在许多领域都具有相当强的应用潜力,二维纳米结构也一直是国内外研究者的研究重点之一。然而,就目前为止,对二维纳米结构的研究,无论是从材料制备、性能评估到最后实际应用开发的各种阶段,仍有大量问题尚未解决。
目前,已经有多种方法被成功地用于二维纳米结构材料的合成与制备,如:分子束外延法、微机械剥离法、热蒸发法、水热生长法和溶剂剥离法等。其中,溶剂剥离法是指在溶剂环境中,将层状化合物按层剥离开来,从而分散于所处溶剂中的方法。这种方法制备二维材料的过程简单,对绝大多数层状晶体结构材料都起作用,且无杂质,重复性好,易于大量生产。
然而,传统的溶剂剥离法在实际操作过程中很难获得少层甚至是单层二维材料,限制了其进一步应用。
发明内容
本发明的目的是提供一种薄层二维材料的制备方法,通过采用本发明的溶剂剥离法,能够获得少层甚至是单层二维材料。
本发明的目的可以通过以下技术方案来实现:
一种薄层二维材料的制备方法,该方法包括以下步骤:
1)在基板上滴加第一溶剂,得到第一溶剂层;
2)利用胶带粘黏二维材料,并将粘黏有二维材料的胶带粘贴在含有第一溶剂层的基板上,使二维材料与第一溶剂层接触;
3)向胶带下面注入第二溶剂;
4)进行热处理;
5)剥离胶带,得到粘附于基板上的薄层二维材料。
进一步地,步骤1)中,所述的第一溶剂层的厚度为0.1-10纳米。
进一步地,步骤3)具体为:揭开胶带一角,利用注射器吸取第二溶剂,并将第二溶剂注入至胶带下的空隙处,通过渗透作用使胶带下面充满第二溶剂。
进一步地,步骤4)中,热处理过程为:在60-70℃下保温20-28h。优选为66℃下保温24h。
进一步地,重复步骤1)至步骤5)多次,在基板上制备多层相互堆叠的薄层二维材料,且基板上的薄层二维材料种类为两种以上。
进一步地,所述的第一溶剂及第二溶剂分别独立地选自苯(2ppm)、四氯化碳(4ppm)、1,2-二氯乙烷(5ppm)、1,1-二氯乙烷(8ppm)、1,1,1-三氯乙烷(1500ppm)、2-甲氧基乙醇(50ppm)、氯仿(60ppm)、1,1,2-三氯乙烯(80ppm)、1,2-二甲氧基乙烷(100ppm)、1,2,3,4-四氢化萘(100ppm)、2-乙氧基乙醇(160ppm)、环丁砜(160ppm)、嘧啶(200ppm)、甲酰胺(220ppm)、正己烷(290ppm)、氯苯(360ppm)、二氧杂环己烷(380ppm)、乙腈(410ppm)、二氯甲烷(600ppm)、乙烯基乙二醇(620ppm)、N,N-二甲基甲酰胺(880ppm)、甲苯(890ppm)、N,N-二甲基乙酰胺(1090ppm)、甲基环己烷(1180ppm)、1,2-二氯乙烯(1870ppm)、二甲苯(2170ppm)、甲醇(3000ppm)、乙醇、环己烷(3880ppm)、N-甲基吡咯烷酮(4840ppm)、戊烷、甲酸、乙酸、乙醚、丙酮、苯甲醚、1-丙醇、2-丙醇、1-丁醇、2-丁醇、戊醇、乙酸丁酯、三丁甲基乙醚、乙酸异丙酯、甲乙酮、二甲亚砜、异丙基苯、乙酸乙酯、甲酸乙酯、乙酸异丁酯、乙酸甲酯、3-甲基-1-丁醇、甲基异丁酮、2-甲基-1-丙醇、乙酸丙酯、1,1-二乙氧基丙烷、1,1-二甲氧基甲烷、2,2-二甲氧基丙烷、异辛烷、异丙醚、甲基异丙酮、甲基四氢呋喃、石油醚、三氯乙酸、三氟乙酸、甲酸、硫酸、乙二胺(NH2CH2CH2NH2)或水。
一种薄层二维材料,该薄层二维材料采用所述的方法制备而成。
二维材料是指电子仅可在两个维度的纳米尺度(1-100nm)上自由运动(平面运动)的材料,如石墨烯、二硫化钼、二硫化钨、二硒化钨等。
一种薄层二维材料在电接触材料中的应用。
一种场效应晶体管,该场效应晶体管包括电接触材料,所述的电接触材料采用所述的方法制备而成。
一种场效应晶体管,该场效应晶体管包括电接触材料,所述的电接触材料含有范德华异质结,所述的范德华异质结采用所述的方法制备而成。场效应晶体管包括基板(材质为硅片、玻璃、塑料或陶瓷)、与基板接触的栅电极(材质为Au、Al、Cu、Mo、Cr、Ti、ITO、W、Ag、Ta或重掺杂硅中的任意一种或任意几种形成的复合材料)、与栅电极接触的绝缘层(由通过溅射或蒸发形成的二氧化硅(SiO2)、氮化硅(Si3N4)、氧化铊(Ta2O5)、氧化铝(Al2O3)、氧化钛(TiO2)、氧化锆(ZrO2)、聚甲基丙烯酸甲酯(PMMA)、聚酰亚胺(PM)、聚乙烯苯酚(PVP)、聚苯乙烯(PS)或聚乙烯醇(PVA)中的任意一种材料形成的薄膜或任意几种材料形成的复合材料薄膜)、与绝缘层接触的有机半导体层、与有机半导体层接触的含有有机异质结的电接触材料所构成的缓冲层、与缓冲层接触的源/漏极(材质为Au、Ag、Mo、Al、Cu、Cr、Ti、Mg或Ca中的任意一种或任意几种形成的复合材料)。范德华异质结采用引入溶剂层的方法堆叠有机半导体层进行制备,包括NP型范德华异质结、PN型范德华异质结、NPN型范德华异质结、PNP型范德华异质结。
所述的有机半导体层的P型有机半导体材料为酞菁铜(CuPc)、酞菁锌(ZnPc)、酞菁镍(NiPc)、酞菁钴(CoPc)、自由酞菁(H2Pc)、酞菁铂(PtPc)、酞菁铅(PbPc)、并五苯(Pentacene)、并三苯、并四苯、2,3-二甲基-1,4-并六苯-苯醌(2,3-dimethyl-1,4-hexacene-quinone)、2,3-二甲基-1,4-并五苯-苯醌(2,3-dimethyl-1,4-pentacene-quinone)、6,13-二己基并五苯(6,13-hexylpentacene)、六硫化并五苯(hexathiaphntacene,HTP)、红荧烯、六噻吩(6P)、BP2T、5,5’-二(2-萘基)-2,2’-二噻吩(NaT2)、5,5”-二(2-萘基)-2,2’:5’,2”-三噻吩(NaT3)、NaT4、5,5””-二(2-萘基)-2,2’:5’,2”:5”,2”’:5”’,2””-五噻吩(NaT5)、5,5””-二(2-萘基)-2,2’:5’,2”:5”,2”’:5”’,2””:5””,2””-六噻吩(NaT6)、2,5-二(2-萘基)-[3,2-b]并二噻吩(NaTT2)、5,5’-二(2-硫茚基)-2,2’-二噻吩(TNT2)、5,5”-二(2-硫茚基)-2,2’:5’,2”-三噻吩(TNT3)、5,5”-二(2-硫茚基)-2,2’:5’,2”:5”,2”’-四噻吩(TNT4)、5,5”-二(2-硫茚基)-2,2’:5’,2”:5”,2”’:5”’,2””-五噻吩(TNT5)、2,5-二(2-硫茚基)-[3,2-b]并二噻吩(TNTT)、5,5’-二(2-硫茚基)-2,2’-二[3,2-b]并二噻吩(TNTT2)、5,5’-二(2-菲基)-2,2’-二噻吩(PhT2)、5,5’-二(2-菲基)-2,2’-二噻吩(PhT2)、5,5”-二(2-菲基)-2,2’:5’,2”-三噻吩(PhT3)、5,5”’-二(2-菲基)-2,2’:5’,2”:5”,2”’-四噻吩(PhT4)、2,5-(2-菲基)-[3,2-b]并二噻吩(PhTT)、5,5’-二(2-菲基)-2,2’-二[3,2-b]并二噻吩(PhTT2)聚吡咯(polypyrrolle,PP)、聚噻吩(Polythiophene,PT)、聚三六甲基噻吩(P3HT)聚苯酚(Poly(p,p’-biphenol),PBP)和聚2,5噻吩乙炔(poly(2,5-thienylenevinylene),PTV)中的任意一种材料或任意几种材料形成的复合材料;
所述的有机半导体层的N型有机半导体材料为氟代酞菁铜(F16CuPc)、氟代酞菁锌(F16ZnPc)、氟代酞菁铁(F16FePc)、氟代酞菁钴(F16CoPc)、氯代酞菁铜(Cl16CuPc)、氯代酞菁锌(Cl16ZnPc)、氯代酞菁铁(Cl16FePc)、氯代酞菁钻(Cl16CoPc)、氟代六噻吩(DFH-6T)、氯代六噻吩(DClH-6T)、C60、3,4,9,10-苝四羧酸二酐(PTCDA),N,N'-二苯基-3,4,9,10-苝四羧酸二胺(DP-PTCDI)、四氰基二甲基醌(TCNQ)、1,4,5,8-萘四羧酸二酐(NTCDA)、1,4,5,8-蔡四峻酸二胺(NTCDI)、11,11,12,12-四氰基二甲基萘醌(TCNQ)和四甲基四硒代富瓦烯(TMTSF)中的任意一种材料或任意几种材料形成的复合材料。
本发明采用一种有机半导体材料作为电接触材料,或者采用两种或两种以上有机半导体材料所构成的有机异质结作为电接触材料。采用含有范德华异质结的电接触材料作为缓冲层能够有效改善金属电极和半导体的接触效应。金属电极的功函数大于4.3电子伏特、小于5.7电子伏特,采用含有范德华异质结的电接触材料作为缓冲层的晶体管的接触电阻被显著的降低,从而增强了电荷注入效率,晶体管的器件性能被明显提高。采用含有范德华异质结的电接触材料作为缓冲层的有机光伏器件,实现了电荷的有效导出,器件性能被大幅度地提高。
与现有技术相比,本发明具有以下特点:
1)本发明在基板上引入一层溶剂,再利用胶带将二维材料转移至基板上,并在胶带的空隙处引入另一层溶剂,通过渗透作用使胶带下完全充满溶剂,之后进行热处理,即利用溶剂剥离的方法制备出薄层二维材料,所制备的薄层二维材料面积大、厚度薄、产率高,而且操作过程简单、无需大型制膜设备,工艺涉及的辅料均为实验室常见常用溶剂,无明显毒性。相比于传统溶剂剥离法,本发明明显提高了获得少层甚至是单层二维材料的概率,提升了制备材料的质量。
2)采用本发明的溶剂剥离方法制备出的薄层二维材料可用于制备场效应晶体管,以及制备含有范德华异质结的有机场效应晶体管。利用本发明方法制备的二维材料所制备的场效应晶体管性能优于同等实验条件下传统溶剂剥离法制备的二维材料所制备的场效应晶体管性能。
附图说明
图1为在基板上滴加第一溶剂后得到第一溶剂层的示意图;
图2为将粘黏有二维材料的胶带粘贴在含有第一溶剂层的基板上的示意图;
图3为向胶带下面注入第二溶剂时的示意图;
图4为在薄层二维材料表面蒸镀电极后的示意图;
图5为在含有范德华异质的电接触材料表面蒸镀电极后的示意图;
图6为采用本发明的溶剂剥离法制备的二维材料的光学显微镜图像;
图7为采用传统溶剂剥离法制备的二维材料的光学显微镜图像;
图8为MoS2尺寸分别超过0.2*105μm2、1.2*105μm2的薄层数量统计图;
图9为MoS2薄层所达到的最大尺寸统计图;
图10为采用本发明制备的二维材料制备的场效应晶体管的传输特性曲线图;
图11为采用传统溶剂剥离法制备的二维材料制备的场效应晶体管的传输特性曲线图;
图中标记说明:
1—第一溶剂层、2—基板、3—绝缘层、4—第一二维材料层、5—胶带、6—二维材料、7—注射器、8—第二溶剂、9—电极、10—第二二维材料层。
具体实施方式
下面结合附图和具体实施例对本发明进行详细说明。本实施例以本发明技术方案为前提进行实施,给出了详细的实施方式和具体的操作过程,但本发明的保护范围不限于下述的实施例。
实施例1:
如图1、图2、图3所示,薄层二维材料的制备方法包括以下步骤:
第一步,在SiO2基板2表面滴上第一溶剂,得到第一溶剂层1;
第二步,利用3M-Scotch胶带5粘黏MoS2,并将MoS2随胶带粘覆到带有第一溶剂层1的SiO2基板2上;
第三步,使用注射器7抽取第二溶剂8,填补到胶带5内的空隙处,通过渗透作用使胶带5下完全充满第二溶剂8;
第四步,将上述样品整体放入烘箱,在66℃的温度下进行热处理,24小时后将样品从烘箱中取出;
第五步,热剥离得到粘附于在SiO2基板2上的MoS2二维材料6。如图4所示,利用薄膜沉积系统在MoS2二维材料6表面蒸镀Cu电极9,构成含有栅极、基板2、半导体层、源极和漏极的场效应晶体管。图5展示了利用上述溶剂剥离法在半导体层上再制备一层二维材料,得到由第一二维材料层4和第二二维材料层10构成的范德华异质结。
通过光学显微镜(型号:LEICA DM 2700M)对本实施例制得的MoS2二维材料6和采用传统溶剂剥离法制备的二维材料进行观测,其微观图像如图6、图7所示。其中图6是在基板2上引入一层乙醇作为第一溶剂,将MoS2转移至基板2上,在胶带5的空隙处引入一层异丙醇作为第二溶剂8,通过渗透作用使胶带5下完全充满异丙醇,通过溶剂剥离的方法制备出MoS2的光学显微镜图像。图7是在基板2上引入一层乙醇作为溶剂,将MoS2转移至基板2上,通过传统溶剂剥离的方法制备出MoS2的光学显微镜图像。对比图6和图7,可以看出,采用本发明的溶剂剥离法所得的MoS2面积明显大于传统溶剂剥离法所得的MoS2面积。
实施例2:
针对不同第二溶剂8处理后经SiO2表面胶带剥离得到的MoS2薄层的产率与面积进行了统计。统计数据分为两项:一项为MoS2尺寸分别超过0.2*105μm2、1.2*105μm2的薄层数量,如图8所示;另一项为薄层所达到的最大尺寸,如图9所示。图中的S1-S5表示不同第二溶剂8处理对应的样品(S1-丙酮;S2-异丙醇;S3-乙醇;S4-去离子水;S5-未经处理),实验所选样品为在SiO2表面旋涂一层乙醇的基板2,从图中可以看到,基于丙酮、异丙醇、乙醇、去离子水四种溶剂的工艺方法,其超过0.2*105μm2的薄层数量分别为20个、31个、19个、10个,超过1.2*105μm2的数量分别为5个、13个、10个、3个;而基于传统溶剂剥离法的相应尺寸样品数量为1个与0个。可以看出,在获得的MoS2薄层的产率与面积上,本发明明显优于传统溶剂剥离法。
实施例3:
分别采用实施例1制备的二维材料及传统溶剂剥离法制备的二维材料制备场效应晶体管。基板2采用二氧化硅(SiO2)层,绝缘层3采用硅(Si)片层。电接触材料是由电子型或空穴型有机半导体所构成的,其中,空穴型半导体层分别由酞菁铜(CuPc)、酞菁镍(NiPc)、酞菁锌(ZnPc)、酞菁钴(CoPc)、酞菁铂(PtPc)、自由酞菁(H2Pc)、四聚噻吩(4T)、五聚噻吩(5T)、六聚噻吩(6T)、二(联苯-4,4’)-2,2’-二噻吩(BP2T)中一种材料构成,电子型半导体层分别由氟代酞菁铜(F16CuPc)、氟代酞菁锌(F16ZnPc)、氟代酞菁铁(F16FePc)、氟代酞菁钴(F16CoPc)、氯代酞菁铜(Cl16CuPc)、氯代酞菁锌(Cl16ZnPc)、氯代酞菁铁(Cl16FePc)、氯代酞菁钻(Cl16CoPc)、氟代六噻吩(DFH-6T)、氯代六噻吩(DClH-6T)中一种材料构成。所有电极的制备均采用真空分子气相沉积方法,其真空度为10-5帕。选取导电金属铜(Cu)做为有机半导体层上的电极,构成源/漏电极。
利用半导体测试仪对利用本发明制备的MoS2所制备的场效应晶体管和传统溶剂剥离法制备的MoS2所制备的场效应晶体管进行测试,所得到的传输特性曲线分别如图10和图11所示。对比可知,利用本发明制备的MoS2所制备的场效应晶体管的性能明显优于传统溶剂剥离法制备的MoS2所制备的场效应晶体管。
实施例4:
一种薄层二维材料的制备方法,该方法包括以下步骤:
1)在基板上滴加第一溶剂,得到第一溶剂层;
2)利用胶带粘黏二维材料,并将粘黏有二维材料的胶带粘贴在含有第一溶剂层的基板上,使二维材料与第一溶剂层接触;
3)向胶带下面注入第二溶剂;
4)进行热处理;
5)剥离胶带,得到粘附于基板上的薄层二维材料。
步骤1)中,所述的第一溶剂层的厚度为0.1-10纳米。
步骤3)具体为:揭开胶带一角,利用注射器吸取第二溶剂,并将第二溶剂注入至胶带下的空隙处,通过渗透作用使胶带下面充满第二溶剂。
步骤4)中,热处理过程为:在60-70℃下保温20-28h。
第一溶剂及第二溶剂分别独立地选自苯、四氯化碳、1,2-二氯乙烷、1,1-二氯乙烷、1,1,1-三氯乙烷、2-甲氧基乙醇、氯仿、1,1,2-三氯乙烯、1,2-二甲氧基乙烷、1,2,3,4-四氢化萘、2-乙氧基乙醇、环丁砜、嘧啶、甲酰胺、正己烷、氯苯、二氧杂环己烷、乙腈、二氯甲烷、乙烯基乙二醇、N,N-二甲基甲酰胺、甲苯、N,N-二甲基乙酰胺、甲基环己烷、1,2-二氯乙烯、二甲苯、甲醇、乙醇、环己烷、N-甲基吡咯烷酮、戊烷、甲酸、乙酸、乙醚、丙酮、苯甲醚、1-丙醇、2-丙醇、1-丁醇、2-丁醇、戊醇、乙酸丁酯、三丁甲基乙醚、乙酸异丙酯、甲乙酮、二甲亚砜、异丙基苯、乙酸乙酯、甲酸乙酯、乙酸异丁酯、乙酸甲酯、3-甲基-1-丁醇、甲基异丁酮、2-甲基-1-丙醇、乙酸丙酯、1,1-二乙氧基丙烷、1,1-二甲氧基甲烷、2,2-二甲氧基丙烷、异辛烷、异丙醚、甲基异丙酮、甲基四氢呋喃、石油醚、三氯乙酸、三氟乙酸、甲酸、硫酸、乙二胺或水。
一种场效应晶体管,该场效应晶体管包括电接触材料,电接触材料采用上述方法制备而成。
实施例5:
一种薄层二维材料的制备方法,在实施例4的基础上,重复步骤1)至步骤5)多次,在基板上制备多层相互堆叠的薄层二维材料,且基板上的薄层二维材料种类为两种以上。
一种场效应晶体管,该场效应晶体管包括电接触材料,电接触材料含有范德华异质结,范德华异质结采用上述方法制备而成。
上述的对实施例的描述是为便于该技术领域的普通技术人员能理解和使用发明。熟悉本领域技术的人员显然可以容易地对这些实施例做出各种修改,并把在此说明的一般原理应用到其他实施例中而不必经过创造性的劳动。因此,本发明不限于上述实施例,本领域技术人员根据本发明的揭示,不脱离本发明范畴所做出的改进和修改都应该在本发明的保护范围之内。
Claims (7)
1.一种薄层二维材料的制备方法,其特征在于,该方法包括以下步骤:
1)在基板上滴加第一溶剂,得到第一溶剂层;
2)利用胶带粘黏二维材料,并将粘黏有二维材料的胶带粘贴在含有第一溶剂层的基板上,使二维材料与第一溶剂层接触;
3)向胶带下面注入第二溶剂;
4)进行热处理;
5)剥离胶带,得到粘附于基板上的薄层二维材料;
6)重复步骤1)至步骤5)多次,在基板上制备多层相互堆叠的薄层二维材料,且基板上的薄层二维材料种类为两种以上;
步骤1)中,所述的第一溶剂层的厚度为0.1-10纳米。
2.根据权利要求1所述的一种薄层二维材料的制备方法,其特征在于,步骤3)具体为:揭开胶带一角,利用注射器吸取第二溶剂,并将第二溶剂注入至胶带下的空隙处,通过渗透作用使胶带下面充满第二溶剂。
3.根据权利要求1所述的一种薄层二维材料的制备方法,其特征在于,步骤4)中,热处理过程为:在60-70℃下保温20-28h。
4.根据权利要求1所述的一种薄层二维材料的制备方法,其特征在于,所述的第一溶剂及第二溶剂分别独立地选自苯、四氯化碳、1,2-二氯乙烷、1,1-二氯乙烷、1,1,1-三氯乙烷、2-甲氧基乙醇、氯仿、1,1,2-三氯乙烯、1,2-二甲氧基乙烷、1,2,3,4-四氢化萘、2-乙氧基乙醇、环丁砜、嘧啶、甲酰胺、正己烷、氯苯、二氧杂环己烷、乙腈、二氯甲烷、乙烯基乙二醇、N,N-二甲基甲酰胺、甲苯、N,N-二甲基乙酰胺、甲基环己烷、1,2-二氯乙烯、二甲苯、甲醇、乙醇、环己烷、N-甲基吡咯烷酮、戊烷、甲酸、乙酸、乙醚、丙酮、苯甲醚、1-丙醇、2-丙醇、1-丁醇、2-丁醇、戊醇、乙酸丁酯、三丁甲基乙醚、乙酸异丙酯、甲乙酮、二甲亚砜、异丙基苯、乙酸乙酯、甲酸乙酯、乙酸异丁酯、乙酸甲酯、3-甲基-1-丁醇、甲基异丁酮、2-甲基-1-丙醇、乙酸丙酯、1,1-二乙氧基丙烷、1,1-二甲氧基甲烷、2,2-二甲氧基丙烷、异辛烷、异丙醚、甲基异丙酮、甲基四氢呋喃、石油醚、三氯乙酸、三氟乙酸、硫酸、乙二胺或水。
5.一种薄层二维材料,其特征在于,该薄层二维材料采用如权利要求1至4任一项所述的方法制备而成。
6.一种如权利要求5所述的薄层二维材料在电接触材料中的应用。
7.一种场效应晶体管,该场效应晶体管包括电接触材料,其特征在于,所述的电接触材料含有范德华异质结,所述的范德华异质结采用如权利要求1所述的方法制备而成。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110007651.3A CN112837996B (zh) | 2021-01-05 | 2021-01-05 | 一种薄层二维材料的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110007651.3A CN112837996B (zh) | 2021-01-05 | 2021-01-05 | 一种薄层二维材料的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112837996A CN112837996A (zh) | 2021-05-25 |
CN112837996B true CN112837996B (zh) | 2022-10-14 |
Family
ID=75927688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110007651.3A Active CN112837996B (zh) | 2021-01-05 | 2021-01-05 | 一种薄层二维材料的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112837996B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113488373B (zh) * | 2021-07-07 | 2023-07-25 | 湖南大学 | 一种干法制备单层二维半导体阵列的方法 |
CN114823971B (zh) * | 2022-03-28 | 2023-07-25 | 国科大杭州高等研究院 | 一种双载流子MoS2二维材料的制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101777625A (zh) * | 2010-01-21 | 2010-07-14 | 上海大学 | 一种双极型有机薄膜晶体管及其制作方法 |
US9443957B1 (en) * | 2015-03-12 | 2016-09-13 | International Business Machines Corporation | Self-aligned source and drain regions for semiconductor devices |
CN106769326A (zh) * | 2017-01-24 | 2017-05-31 | 华东师范大学 | 一种干法制备二维材料的tem样品的方法 |
CN108896374A (zh) * | 2018-08-16 | 2018-11-27 | 华东师范大学 | 一种二维层状薄膜材料的剥离装置 |
KR20190035171A (ko) * | 2017-09-26 | 2019-04-03 | 한양대학교 산학협력단 | 2차원 물질 전사 방법 및 장치. |
CN111863624A (zh) * | 2020-06-12 | 2020-10-30 | 南开大学 | 一种二维材料半导体薄膜的大规模制备及图案化方法及二维材料半导体薄膜 |
CN111889112A (zh) * | 2020-08-04 | 2020-11-06 | 杭州紫芯光电有限公司 | 一种MoS2/Graphene二维材料异质结可见光催化剂的制备方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2005045908A1 (ja) * | 2003-11-06 | 2007-05-24 | 松下電器産業株式会社 | 基板貼り合わせ方法、その貼り合わせ基板及び直接接合基板 |
KR101027858B1 (ko) * | 2009-01-13 | 2011-04-07 | 도레이첨단소재 주식회사 | 반도체 박막 웨이퍼 가공용 웨이퍼 서포트 점착필름 |
US8753468B2 (en) * | 2009-08-27 | 2014-06-17 | The United States Of America, As Represented By The Secretary Of The Navy | Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates |
JP5707628B2 (ja) * | 2009-10-16 | 2015-04-30 | グラフェンスクェア インコーポレイテッド | グラフェンのロールツーロール転写方法、グラフェンのロールツーロール転写装置、グラフェンロールの製造方法、及び素子の製造方法 |
KR101652787B1 (ko) * | 2009-11-12 | 2016-09-01 | 삼성전자주식회사 | 대면적 그라핀의 제조방법 및 전사방법 |
CN103387230B (zh) * | 2013-07-23 | 2015-12-23 | 中国科学院微电子研究所 | 一种石墨烯导电薄膜的制备方法 |
US20160284811A1 (en) * | 2013-11-04 | 2016-09-29 | Massachusetts Institute Of Technology | Electronics including graphene-based hybrid structures |
CN105523585B (zh) * | 2016-02-26 | 2017-01-25 | 吉林大学 | 一种二维MoS2纳米片的制备方法 |
CN106289898A (zh) * | 2016-07-20 | 2017-01-04 | 华东师范大学 | 一种层数可控的二硫化钼tem样品的制备方法 |
US10369775B2 (en) * | 2016-12-09 | 2019-08-06 | Imec Vzw | Method of releasing graphene from substrate |
WO2019011224A1 (en) * | 2017-07-10 | 2019-01-17 | The Hong Kong University Of Science And Technology | GRAPHENE TRANSFER METHOD |
CN108281376A (zh) * | 2018-01-22 | 2018-07-13 | 南京工业大学 | 一种半导体器件的制备方法 |
CN110713172B (zh) * | 2018-07-12 | 2023-06-09 | 天津大学 | 一种三元金属原子晶体氢化制备二维材料的方法 |
CN109346410A (zh) * | 2018-09-18 | 2019-02-15 | 山东大学 | 一种二硫化钼晶体管及其制造方法 |
CN112599468B (zh) * | 2020-12-31 | 2022-10-14 | 福建江夏学院 | 一种基于溶剂处理制备二硫化钼薄层及其薄膜晶体管的方法 |
-
2021
- 2021-01-05 CN CN202110007651.3A patent/CN112837996B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101777625A (zh) * | 2010-01-21 | 2010-07-14 | 上海大学 | 一种双极型有机薄膜晶体管及其制作方法 |
US9443957B1 (en) * | 2015-03-12 | 2016-09-13 | International Business Machines Corporation | Self-aligned source and drain regions for semiconductor devices |
CN106769326A (zh) * | 2017-01-24 | 2017-05-31 | 华东师范大学 | 一种干法制备二维材料的tem样品的方法 |
KR20190035171A (ko) * | 2017-09-26 | 2019-04-03 | 한양대학교 산학협력단 | 2차원 물질 전사 방법 및 장치. |
CN108896374A (zh) * | 2018-08-16 | 2018-11-27 | 华东师范大学 | 一种二维层状薄膜材料的剥离装置 |
CN111863624A (zh) * | 2020-06-12 | 2020-10-30 | 南开大学 | 一种二维材料半导体薄膜的大规模制备及图案化方法及二维材料半导体薄膜 |
CN111889112A (zh) * | 2020-08-04 | 2020-11-06 | 杭州紫芯光电有限公司 | 一种MoS2/Graphene二维材料异质结可见光催化剂的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN112837996A (zh) | 2021-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Minari et al. | Controlled Self‐Assembly of Organic Semiconductors for Solution‐Based Fabrication of Organic Field‐Effect Transistors | |
Wen et al. | Recent progress in n‐channel organic thin‐film transistors | |
US8187915B2 (en) | Aryl dicarboxylic acid diimidazole-based compounds as n-type semiconductor materials for thin film transistors | |
US9159926B2 (en) | Low contact resistance organic thin film transistors | |
CN112837996B (zh) | 一种薄层二维材料的制备方法 | |
US20060131564A1 (en) | Fluorine-containing N,N'-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors | |
CN100568574C (zh) | 一种有机场效应晶体管及其制备方法与应用 | |
US20130284984A1 (en) | Semiconductor blend | |
CN101101967A (zh) | 低成本高性能有机场效应晶体管及制备方法 | |
Huang et al. | High speed ultraviolet phototransistors based on an ambipolar fullerene derivative | |
Huang et al. | Orthogonal ambipolar semiconductor nanostructures for complementary logic gates | |
Hu et al. | Controllable self-assembly of PTCDI-C8 for high mobility low-dimensional organic field-effect transistors | |
CN101654510B (zh) | 高分子半导体 | |
Nketia-Yawson et al. | High-mobility electrolyte-gated perovskite transistors on flexible plastic substrate via interface and composition engineering | |
JP2004158709A (ja) | 半導体装置 | |
JP2010123951A (ja) | 薄膜トランジスタおよび半導体組成物 | |
CN105679939A (zh) | 一种基于掺杂噻吩异靛的有机薄膜场效应晶体管及其制备方法 | |
Duan et al. | Patterning 2D Organic Crystalline Semiconductors via Thermally Induced Self‐Assembly | |
US8110432B1 (en) | Gate-planarized thin film transistor substrates and related methods of fabrication | |
Zhang et al. | An organic field effect transistor memory adopting octadecyltrichlorosilane self-assembled monolayer | |
KR100976572B1 (ko) | 유기 박막 트랜지스터의 제조방법 | |
CN101335332A (zh) | 一种有机场效应晶体管及其制备方法 | |
Lee et al. | Exfoliated Graphite Electrodes for Organic Single-Crystal Field-Effect Transistor Devices | |
JP4883410B2 (ja) | 有機電界効果トランジスタ | |
WO2018176537A1 (zh) | 一种场效应晶体管及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |