CN112786424B - 气体供给系统、基板处理装置和气体供给系统的控制方法 - Google Patents

气体供给系统、基板处理装置和气体供给系统的控制方法

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Publication number
CN112786424B
CN112786424B CN202011144922.1A CN202011144922A CN112786424B CN 112786424 B CN112786424 B CN 112786424B CN 202011144922 A CN202011144922 A CN 202011144922A CN 112786424 B CN112786424 B CN 112786424B
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CN
China
Prior art keywords
valve
gas
gas supply
pipe
air
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011144922.1A
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English (en)
Chinese (zh)
Other versions
CN112786424A (zh
Inventor
泽地淳
网仓纪彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN112786424A publication Critical patent/CN112786424A/zh
Application granted granted Critical
Publication of CN112786424B publication Critical patent/CN112786424B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/186—Valves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CN202011144922.1A 2019-11-01 2020-10-23 气体供给系统、基板处理装置和气体供给系统的控制方法 Active CN112786424B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-199623 2019-11-01
JP2019199623A JP7373968B2 (ja) 2019-11-01 2019-11-01 ガス供給システム

Publications (2)

Publication Number Publication Date
CN112786424A CN112786424A (zh) 2021-05-11
CN112786424B true CN112786424B (zh) 2025-12-30

Family

ID=75687779

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011144922.1A Active CN112786424B (zh) 2019-11-01 2020-10-23 气体供给系统、基板处理装置和气体供给系统的控制方法

Country Status (5)

Country Link
US (1) US11538665B2 (https=)
JP (1) JP7373968B2 (https=)
KR (1) KR102782426B1 (https=)
CN (1) CN112786424B (https=)
TW (1) TWI853108B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11437230B2 (en) 2020-04-06 2022-09-06 Applied Materials, Inc. Amorphous carbon multilayer coating with directional protection
US12068135B2 (en) 2021-02-12 2024-08-20 Applied Materials, Inc. Fast gas exchange apparatus, system, and method
JP7653860B2 (ja) * 2021-07-30 2025-03-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR20250002454A (ko) * 2022-05-02 2025-01-07 램 리써치 코포레이션 가스 공급 라인 배열
KR102779634B1 (ko) * 2022-12-28 2025-03-12 세메스 주식회사 액 공급장치, 기판처리장치 및 기판처리방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019110215A (ja) * 2017-12-19 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691038B2 (ja) 1988-08-12 1994-11-14 日本電気株式会社 ガス供給装置
JP4078982B2 (ja) * 2002-04-22 2008-04-23 東京エレクトロン株式会社 処理システム及び流量測定方法
JP2007048926A (ja) 2005-08-10 2007-02-22 Tokyo Electron Ltd Ｗ系膜の成膜方法、ゲート電極の形成方法、半導体装置の製造方法およびコンピュータ読取可能な記憶媒体
KR100694666B1 (ko) * 2005-08-24 2007-03-13 삼성전자주식회사 원자층 증착 챔버의 에어 밸브 장치
JP2009076856A (ja) * 2007-08-28 2009-04-09 Dainippon Screen Mfg Co Ltd 基板処理装置
CN101276732A (zh) * 2008-03-25 2008-10-01 大连八方经济技术有限公司 一种微电子气源柜吹扫系统
JP5378706B2 (ja) * 2008-05-22 2013-12-25 東京エレクトロン株式会社 プラズマ処理装置及びそれに用いられる処理ガス供給装置
JP6023854B1 (ja) * 2015-06-09 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6571022B2 (ja) * 2016-02-04 2019-09-04 東京エレクトロン株式会社 基板処理装置
JP6091038B1 (ja) * 2016-10-28 2017-03-08 大成ラミック株式会社 包装袋
JP2019054140A (ja) * 2017-09-15 2019-04-04 東芝メモリ株式会社 半導体製造装置
KR20190090494A (ko) * 2018-01-25 2019-08-02 주식회사 명신 전자소재 제조장치의 가스배관 시스템 및 퍼지가스의 역류를 방지시스템

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019110215A (ja) * 2017-12-19 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
US11538665B2 (en) 2022-12-27
JP2021072405A (ja) 2021-05-06
JP7373968B2 (ja) 2023-11-06
TWI853108B (zh) 2024-08-21
KR102782426B1 (ko) 2025-03-14
CN112786424A (zh) 2021-05-11
KR20210053201A (ko) 2021-05-11
TW202133217A (zh) 2021-09-01
US20210134564A1 (en) 2021-05-06

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