JP2019054140A - 半導体製造装置 - Google Patents
半導体製造装置 Download PDFInfo
- Publication number
- JP2019054140A JP2019054140A JP2017178093A JP2017178093A JP2019054140A JP 2019054140 A JP2019054140 A JP 2019054140A JP 2017178093 A JP2017178093 A JP 2017178093A JP 2017178093 A JP2017178093 A JP 2017178093A JP 2019054140 A JP2019054140 A JP 2019054140A
- Authority
- JP
- Japan
- Prior art keywords
- gas supply
- valve
- gas
- processing
- supply pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
Abstract
Description
第1の実施形態に係る半導体製造装置は、半導体装置を製造するために、処理室内の基板に処理ガスを供給し、基板を処理する。半導体製造装置は、例えば、原子層堆積(ALD:Atomic Layer Deposition)法を用いて基板を処理するALD装置である。
次に、第2の実施形態に係る半導体製造装置201について説明する。以下では、第1の実施形態と異なる部分を中心に説明する。
次に、第3の実施形態に係る半導体製造装置301について説明する。以下では、第1の実施形態と異なる部分を中心に説明する。
Claims (5)
- 基板が処理される処理室と、
ガス供給源と前記処理室との間に配された第1のガス供給管と、
前記第1のガス供給管に配され、第1の開口を形成する第1の弁座と第1のダイヤフラムと前記第1のダイヤフラムを前記第1の弁座に押し付け可能である第1の押し付け部材とを有する第1のバルブと、
前記ガス供給源と前記処理室との間に配され、前記第1のガス供給管に対して並列に接続された第2のガス供給管と、
前記第2のガス供給管に配され、第2の開口を形成する第2の弁座と第2のダイヤフラムと前記第2のダイヤフラムを前記第2の弁座に押し付け可能である第2の押し付け部材とを有する第2のバルブと、
を備えた半導体製造装置。 - 前記第1のバルブと前記第2のバルブとは、前記第1のガス供給管及び前記第2のガス供給管の上流側から下流側に至るガス供給経路に対して放射状に接続されている
請求項1に記載の半導体製造装置。 - 前記第1のバルブ及び前記第2のバルブを順次に開閉させるコントローラをさらに備えた
請求項1又は2に記載の半導体製造装置。 - 基板を処理する処理室と、
ガス供給源と前記処理室とを接続するガス供給管と、
前記ガス供給管に配され、処理ガスを加圧可能であるポンプバルブと、
を備えた半導体製造装置。 - 前記ポンプバルブは、
開口を形成する弁座と、ダイヤフラムと、前記ダイヤフラムを前記弁座に押し付け可能である押し付け部材とを有する開閉機構と、
前記開口の上流側に配された加圧機構と、
を有し、
前記開閉機構を開状態にするタイミングと前記加圧機構により処理ガスを加圧するタイミングとを同期させるコントローラをさらに備えた
請求項4に記載の半導体製造装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017178093A JP2019054140A (ja) | 2017-09-15 | 2017-09-15 | 半導体製造装置 |
US15/914,373 US20190085450A1 (en) | 2017-09-15 | 2018-03-07 | Semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017178093A JP2019054140A (ja) | 2017-09-15 | 2017-09-15 | 半導体製造装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2019054140A true JP2019054140A (ja) | 2019-04-04 |
Family
ID=65719150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017178093A Pending JP2019054140A (ja) | 2017-09-15 | 2017-09-15 | 半導体製造装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20190085450A1 (ja) |
JP (1) | JP2019054140A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024057509A1 (ja) * | 2022-09-15 | 2024-03-21 | 日本碍子株式会社 | XeF2ドライエッチングシステム及びプロセス |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7373968B2 (ja) * | 2019-11-01 | 2023-11-06 | 東京エレクトロン株式会社 | ガス供給システム |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62287618A (ja) * | 1986-05-30 | 1987-12-14 | クリスタル・スペシヤルテイ−ズ・インコ−ポレ−テツド | 物質を基板上に堆積させる方法および装置 |
JPH0927455A (ja) * | 1995-07-11 | 1997-01-28 | Furukawa Electric Co Ltd:The | 半導体基板の製造方法と原料ガスの供給装置 |
JP2000246078A (ja) * | 1998-12-28 | 2000-09-12 | Omuni Kenkyusho:Kk | ガス混合装置およびガス混合ブロック |
JP2009033121A (ja) * | 2007-06-28 | 2009-02-12 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
JP2015069987A (ja) * | 2013-09-26 | 2015-04-13 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び基板処理方法 |
JP2016089885A (ja) * | 2014-10-31 | 2016-05-23 | 株式会社フジキン | バルブ、流体制御装置、半導体制御装置、および半導体製造方法 |
-
2017
- 2017-09-15 JP JP2017178093A patent/JP2019054140A/ja active Pending
-
2018
- 2018-03-07 US US15/914,373 patent/US20190085450A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62287618A (ja) * | 1986-05-30 | 1987-12-14 | クリスタル・スペシヤルテイ−ズ・インコ−ポレ−テツド | 物質を基板上に堆積させる方法および装置 |
JPH0927455A (ja) * | 1995-07-11 | 1997-01-28 | Furukawa Electric Co Ltd:The | 半導体基板の製造方法と原料ガスの供給装置 |
JP2000246078A (ja) * | 1998-12-28 | 2000-09-12 | Omuni Kenkyusho:Kk | ガス混合装置およびガス混合ブロック |
JP2009033121A (ja) * | 2007-06-28 | 2009-02-12 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
JP2015069987A (ja) * | 2013-09-26 | 2015-04-13 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び基板処理方法 |
JP2016089885A (ja) * | 2014-10-31 | 2016-05-23 | 株式会社フジキン | バルブ、流体制御装置、半導体制御装置、および半導体製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024057509A1 (ja) * | 2022-09-15 | 2024-03-21 | 日本碍子株式会社 | XeF2ドライエッチングシステム及びプロセス |
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US20190085450A1 (en) | 2019-03-21 |
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