TWI853108B - 氣體供給系統、基板處理裝置及氣體供給系統之控制方法 - Google Patents

氣體供給系統、基板處理裝置及氣體供給系統之控制方法 Download PDF

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Publication number
TWI853108B
TWI853108B TW109136078A TW109136078A TWI853108B TW I853108 B TWI853108 B TW I853108B TW 109136078 A TW109136078 A TW 109136078A TW 109136078 A TW109136078 A TW 109136078A TW I853108 B TWI853108 B TW I853108B
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TW
Taiwan
Prior art keywords
valve
pipe
gas
air
state
Prior art date
Application number
TW109136078A
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English (en)
Chinese (zh)
Other versions
TW202133217A (zh
Inventor
澤地淳
網倉紀彦
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW202133217A publication Critical patent/TW202133217A/zh
Application granted granted Critical
Publication of TWI853108B publication Critical patent/TWI853108B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/186—Valves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW109136078A 2019-11-01 2020-10-19 氣體供給系統、基板處理裝置及氣體供給系統之控制方法 TWI853108B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-199623 2019-11-01
JP2019199623A JP7373968B2 (ja) 2019-11-01 2019-11-01 ガス供給システム

Publications (2)

Publication Number Publication Date
TW202133217A TW202133217A (zh) 2021-09-01
TWI853108B true TWI853108B (zh) 2024-08-21

Family

ID=75687779

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109136078A TWI853108B (zh) 2019-11-01 2020-10-19 氣體供給系統、基板處理裝置及氣體供給系統之控制方法

Country Status (5)

Country Link
US (1) US11538665B2 (https=)
JP (1) JP7373968B2 (https=)
KR (1) KR102782426B1 (https=)
CN (1) CN112786424B (https=)
TW (1) TWI853108B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11437230B2 (en) 2020-04-06 2022-09-06 Applied Materials, Inc. Amorphous carbon multilayer coating with directional protection
US12068135B2 (en) 2021-02-12 2024-08-20 Applied Materials, Inc. Fast gas exchange apparatus, system, and method
JP7653860B2 (ja) * 2021-07-30 2025-03-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR20250002454A (ko) * 2022-05-02 2025-01-07 램 리써치 코포레이션 가스 공급 라인 배열
KR102779634B1 (ko) * 2022-12-28 2025-03-12 세메스 주식회사 액 공급장치, 기판처리장치 및 기판처리방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050064609A1 (en) * 2002-04-22 2005-03-24 Tokyo Electron Limited Semiconductor processing system

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691038B2 (ja) 1988-08-12 1994-11-14 日本電気株式会社 ガス供給装置
JP2007048926A (ja) 2005-08-10 2007-02-22 Tokyo Electron Ltd Ｗ系膜の成膜方法、ゲート電極の形成方法、半導体装置の製造方法およびコンピュータ読取可能な記憶媒体
KR100694666B1 (ko) * 2005-08-24 2007-03-13 삼성전자주식회사 원자층 증착 챔버의 에어 밸브 장치
JP2009076856A (ja) * 2007-08-28 2009-04-09 Dainippon Screen Mfg Co Ltd 基板処理装置
CN101276732A (zh) * 2008-03-25 2008-10-01 大连八方经济技术有限公司 一种微电子气源柜吹扫系统
JP5378706B2 (ja) * 2008-05-22 2013-12-25 東京エレクトロン株式会社 プラズマ処理装置及びそれに用いられる処理ガス供給装置
JP6023854B1 (ja) * 2015-06-09 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6571022B2 (ja) * 2016-02-04 2019-09-04 東京エレクトロン株式会社 基板処理装置
JP6091038B1 (ja) * 2016-10-28 2017-03-08 大成ラミック株式会社 包装袋
JP2019054140A (ja) * 2017-09-15 2019-04-04 東芝メモリ株式会社 半導体製造装置
JP6902991B2 (ja) 2017-12-19 2021-07-14 株式会社日立ハイテク プラズマ処理装置
KR20190090494A (ko) * 2018-01-25 2019-08-02 주식회사 명신 전자소재 제조장치의 가스배관 시스템 및 퍼지가스의 역류를 방지시스템

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050064609A1 (en) * 2002-04-22 2005-03-24 Tokyo Electron Limited Semiconductor processing system

Also Published As

Publication number Publication date
US11538665B2 (en) 2022-12-27
JP2021072405A (ja) 2021-05-06
JP7373968B2 (ja) 2023-11-06
KR102782426B1 (ko) 2025-03-14
CN112786424A (zh) 2021-05-11
KR20210053201A (ko) 2021-05-11
TW202133217A (zh) 2021-09-01
CN112786424B (zh) 2025-12-30
US20210134564A1 (en) 2021-05-06

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