CN112786423B - 用于对衬底进行等离子体蚀刻的设备及方法 - Google Patents

用于对衬底进行等离子体蚀刻的设备及方法 Download PDF

Info

Publication number
CN112786423B
CN112786423B CN202010396811.3A CN202010396811A CN112786423B CN 112786423 B CN112786423 B CN 112786423B CN 202010396811 A CN202010396811 A CN 202010396811A CN 112786423 B CN112786423 B CN 112786423B
Authority
CN
China
Prior art keywords
substrate
location
feature
camera
illuminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010396811.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN112786423A (zh
Inventor
O·安塞尔
H·戈登-莫伊斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPTS Technologies Ltd
Original Assignee
SPTS Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SPTS Technologies Ltd filed Critical SPTS Technologies Ltd
Publication of CN112786423A publication Critical patent/CN112786423A/zh
Application granted granted Critical
Publication of CN112786423B publication Critical patent/CN112786423B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination or light collection take place in the same area of the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing & Machinery (AREA)
CN202010396811.3A 2019-11-05 2020-05-12 用于对衬底进行等离子体蚀刻的设备及方法 Active CN112786423B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1916079.5 2019-11-05
GBGB1916079.5A GB201916079D0 (en) 2019-11-05 2019-11-05 Apparatus and method

Publications (2)

Publication Number Publication Date
CN112786423A CN112786423A (zh) 2021-05-11
CN112786423B true CN112786423B (zh) 2025-07-15

Family

ID=68807187

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010396811.3A Active CN112786423B (zh) 2019-11-05 2020-05-12 用于对衬底进行等离子体蚀刻的设备及方法

Country Status (7)

Country Link
US (1) US11710670B2 (https=)
EP (1) EP3819927B1 (https=)
JP (1) JP7328944B2 (https=)
KR (1) KR102917539B1 (https=)
CN (1) CN112786423B (https=)
GB (1) GB201916079D0 (https=)
TW (1) TWI887272B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240043989A1 (en) * 2020-12-31 2024-02-08 3M Innovative Properties Company Metallic Nanohole Arrays on Nanowells with Controlled Depth and Methods of Making the Same
US11908716B2 (en) 2021-05-14 2024-02-20 Applied Materials, Inc. Image-based in-situ process monitoring
JP7645139B2 (ja) * 2021-06-22 2025-03-13 東京エレクトロン株式会社 検査方法及び検査システム
KR102740869B1 (ko) 2021-12-30 2024-12-09 세메스 주식회사 포토 마스크 보정 장치 및 방법
US12046522B2 (en) * 2022-02-18 2024-07-23 Applied Materials, Inc. Endpoint detection in low open area and/or high aspect ratio etch applications

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110383449A (zh) * 2017-03-13 2019-10-25 应用材料公司 具有反射终点检测的蚀刻处理系统

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147433A (ja) * 1983-02-14 1984-08-23 Hitachi Ltd エツチング装置
JPH066797B2 (ja) * 1985-03-11 1994-01-26 株式会社日立製作所 エツチングの終点検出方法
JP2595083B2 (ja) * 1988-06-08 1997-03-26 株式会社日立製作所 配線形成方法及びその装置
JPH03283615A (ja) * 1990-03-30 1991-12-13 Hitachi Electron Eng Co Ltd エッチング・モニタ方式
US5450205A (en) 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
JP4444428B2 (ja) 2000-01-28 2010-03-31 東京エレクトロン株式会社 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
US7101805B2 (en) 2003-05-09 2006-09-05 Unaxis Usa Inc. Envelope follower end point detection in time division multiplexed processes
US20050020073A1 (en) 2003-07-22 2005-01-27 Lam Research Corporation Method and system for electronic spatial filtering of spectral reflectometer optical signals
JP4371999B2 (ja) 2004-12-28 2009-11-25 パナソニック株式会社 ドライエッチング方法及びドライエッチング装置
JP2006186222A (ja) 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd プラズマ処理装置
TWI388936B (zh) * 2006-10-30 2013-03-11 應用材料股份有限公司 光罩蝕刻之終點偵測
US8009938B2 (en) * 2008-02-29 2011-08-30 Applied Materials, Inc. Advanced process sensing and control using near infrared spectral reflectometry
US8709268B2 (en) 2011-11-14 2014-04-29 Spts Technologies Limited Etching apparatus and methods
GB201119598D0 (en) 2011-11-14 2011-12-28 Spts Technologies Ltd Etching apparatus and methods
JP6033453B2 (ja) 2012-10-17 2016-11-30 東京エレクトロン株式会社 多変量解析を用いたプラズマエンドポイント検出
US9543225B2 (en) 2014-04-29 2017-01-10 Lam Research Corporation Systems and methods for detecting endpoint for through-silicon via reveal applications
JP2017168625A (ja) 2016-03-16 2017-09-21 住友電気工業株式会社 面発光半導体レーザを作製する方法
US10269545B2 (en) 2016-08-03 2019-04-23 Lam Research Corporation Methods for monitoring plasma processing systems for advanced process and tool control
US10438825B2 (en) 2016-08-29 2019-10-08 Kla-Tencor Corporation Spectral reflectometry for in-situ process monitoring and control
JP6808596B2 (ja) * 2017-03-10 2021-01-06 キオクシア株式会社 センシングシステム
US20180286643A1 (en) * 2017-03-29 2018-10-04 Tokyo Electron Limited Advanced optical sensor, system, and methodologies for etch processing monitoring
KR20200015775A (ko) * 2017-07-17 2020-02-12 에이에스엠엘 네델란즈 비.브이. 정보 결정 장치 및 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110383449A (zh) * 2017-03-13 2019-10-25 应用材料公司 具有反射终点检测的蚀刻处理系统

Also Published As

Publication number Publication date
EP3819927A1 (en) 2021-05-12
US11710670B2 (en) 2023-07-25
KR20210054447A (ko) 2021-05-13
KR102917539B1 (ko) 2026-01-23
TWI887272B (zh) 2025-06-21
JP7328944B2 (ja) 2023-08-17
CN112786423A (zh) 2021-05-11
GB201916079D0 (en) 2019-12-18
EP3819927B1 (en) 2022-06-15
TW202131374A (zh) 2021-08-16
JP2021077859A (ja) 2021-05-20
US20210134684A1 (en) 2021-05-06

Similar Documents

Publication Publication Date Title
CN112786423B (zh) 用于对衬底进行等离子体蚀刻的设备及方法
US10436576B2 (en) Defect reviewing method and device
US7127098B2 (en) Image detection method and its apparatus and defect detection method and its apparatus
US7884024B2 (en) Apparatus and method for optical interference fringe based integrated circuit processing
KR101730668B1 (ko) 기판들 사이에서 베벨 에칭 재현성을 개선시키기 위한 장치 및 방법
US20090196489A1 (en) High resolution edge inspection
US20170328842A1 (en) Defect observation method and defect observation device
JP5868203B2 (ja) 検査装置
US8460946B2 (en) Methods of processing and inspecting semiconductor substrates
JP2021077859A5 (https=)
US7697146B2 (en) Apparatus and method for optical interference fringe based integrated circuit processing
US7142315B1 (en) Slit confocal autofocus system
US20150168132A1 (en) Method and system for use in optical measurements in deep three-dimensional structures
US5942763A (en) Apparatus and method for identifying an identification mark of a wafer
JP2012185031A (ja) マスク検査方法およびその装置
EP1316795B1 (en) Liquid-containing substance analyzing device and liquid-containing substance analyzing method
KR20070113655A (ko) 박막의 두께 측정 방법 및 이를 수행하기 위한 장치
JP2002054909A (ja) 画像取得装置
JP2005294365A (ja) 研磨終点検出方法および研磨終点検出装置ならびに半導体装置
US12123698B1 (en) Method and a system for characterizing structures through a substrate
US20240404851A1 (en) Multi-target design for in-situ analysis of semiconductor fabrication process
JP2024138637A (ja) 画像処理方法、観察方法、基板処理方法および基板処理装置
KR20070015310A (ko) 반도체 소자의 오버레이 측정장치
US20030003676A1 (en) Ultra-fine alignment system and method using acoustic-AFM interaction
KR20040054049A (ko) 반도체 소자의 개구부 검사방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant