GB201916079D0 - Apparatus and method - Google Patents
Apparatus and methodInfo
- Publication number
- GB201916079D0 GB201916079D0 GBGB1916079.5A GB201916079A GB201916079D0 GB 201916079 D0 GB201916079 D0 GB 201916079D0 GB 201916079 A GB201916079 A GB 201916079A GB 201916079 D0 GB201916079 D0 GB 201916079D0
- Authority
- GB
- United Kingdom
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
- H01J37/222—Image processing arrangements associated with the tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
- H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
- H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination or light collection take place in the same area of the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32926—Software, data control or modelling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing & Machinery (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1916079.5A GB201916079D0 (en) | 2019-11-05 | 2019-11-05 | Apparatus and method |
| CN202010396811.3A CN112786423B (zh) | 2019-11-05 | 2020-05-12 | 用于对衬底进行等离子体蚀刻的设备及方法 |
| JP2020134511A JP7328944B2 (ja) | 2019-11-05 | 2020-08-07 | リフレクトメトリ終了点イメージング装置及び方法 |
| US17/000,243 US11710670B2 (en) | 2019-11-05 | 2020-08-21 | Apparatus and method |
| KR1020200128389A KR102917539B1 (ko) | 2019-11-05 | 2020-10-05 | 반사측정 종점의 이미징 |
| TW109134345A TWI887272B (zh) | 2019-11-05 | 2020-10-05 | 用於對一基板進行電漿蝕刻之設備及方法 |
| EP20202400.6A EP3819927B1 (en) | 2019-11-05 | 2020-10-16 | Apparatus and method for plasma etching a substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1916079.5A GB201916079D0 (en) | 2019-11-05 | 2019-11-05 | Apparatus and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB201916079D0 true GB201916079D0 (en) | 2019-12-18 |
Family
ID=68807187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GBGB1916079.5A Ceased GB201916079D0 (en) | 2019-11-05 | 2019-11-05 | Apparatus and method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11710670B2 (https=) |
| EP (1) | EP3819927B1 (https=) |
| JP (1) | JP7328944B2 (https=) |
| KR (1) | KR102917539B1 (https=) |
| CN (1) | CN112786423B (https=) |
| GB (1) | GB201916079D0 (https=) |
| TW (1) | TWI887272B (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240043989A1 (en) * | 2020-12-31 | 2024-02-08 | 3M Innovative Properties Company | Metallic Nanohole Arrays on Nanowells with Controlled Depth and Methods of Making the Same |
| US11908716B2 (en) | 2021-05-14 | 2024-02-20 | Applied Materials, Inc. | Image-based in-situ process monitoring |
| JP7645139B2 (ja) * | 2021-06-22 | 2025-03-13 | 東京エレクトロン株式会社 | 検査方法及び検査システム |
| KR102740869B1 (ko) | 2021-12-30 | 2024-12-09 | 세메스 주식회사 | 포토 마스크 보정 장치 및 방법 |
| US12046522B2 (en) * | 2022-02-18 | 2024-07-23 | Applied Materials, Inc. | Endpoint detection in low open area and/or high aspect ratio etch applications |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59147433A (ja) * | 1983-02-14 | 1984-08-23 | Hitachi Ltd | エツチング装置 |
| JPH066797B2 (ja) * | 1985-03-11 | 1994-01-26 | 株式会社日立製作所 | エツチングの終点検出方法 |
| JP2595083B2 (ja) * | 1988-06-08 | 1997-03-26 | 株式会社日立製作所 | 配線形成方法及びその装置 |
| JPH03283615A (ja) * | 1990-03-30 | 1991-12-13 | Hitachi Electron Eng Co Ltd | エッチング・モニタ方式 |
| US5450205A (en) | 1993-05-28 | 1995-09-12 | Massachusetts Institute Of Technology | Apparatus and method for real-time measurement of thin film layer thickness and changes thereof |
| JP4444428B2 (ja) | 2000-01-28 | 2010-03-31 | 東京エレクトロン株式会社 | エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置 |
| US7101805B2 (en) | 2003-05-09 | 2006-09-05 | Unaxis Usa Inc. | Envelope follower end point detection in time division multiplexed processes |
| US20050020073A1 (en) | 2003-07-22 | 2005-01-27 | Lam Research Corporation | Method and system for electronic spatial filtering of spectral reflectometer optical signals |
| JP4371999B2 (ja) | 2004-12-28 | 2009-11-25 | パナソニック株式会社 | ドライエッチング方法及びドライエッチング装置 |
| JP2006186222A (ja) | 2004-12-28 | 2006-07-13 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
| TWI388936B (zh) * | 2006-10-30 | 2013-03-11 | 應用材料股份有限公司 | 光罩蝕刻之終點偵測 |
| US8009938B2 (en) * | 2008-02-29 | 2011-08-30 | Applied Materials, Inc. | Advanced process sensing and control using near infrared spectral reflectometry |
| US8709268B2 (en) | 2011-11-14 | 2014-04-29 | Spts Technologies Limited | Etching apparatus and methods |
| GB201119598D0 (en) | 2011-11-14 | 2011-12-28 | Spts Technologies Ltd | Etching apparatus and methods |
| JP6033453B2 (ja) | 2012-10-17 | 2016-11-30 | 東京エレクトロン株式会社 | 多変量解析を用いたプラズマエンドポイント検出 |
| US9543225B2 (en) | 2014-04-29 | 2017-01-10 | Lam Research Corporation | Systems and methods for detecting endpoint for through-silicon via reveal applications |
| JP2017168625A (ja) | 2016-03-16 | 2017-09-21 | 住友電気工業株式会社 | 面発光半導体レーザを作製する方法 |
| US10269545B2 (en) | 2016-08-03 | 2019-04-23 | Lam Research Corporation | Methods for monitoring plasma processing systems for advanced process and tool control |
| US10438825B2 (en) | 2016-08-29 | 2019-10-08 | Kla-Tencor Corporation | Spectral reflectometry for in-situ process monitoring and control |
| JP6808596B2 (ja) * | 2017-03-10 | 2021-01-06 | キオクシア株式会社 | センシングシステム |
| US11022877B2 (en) * | 2017-03-13 | 2021-06-01 | Applied Materials, Inc. | Etch processing system having reflective endpoint detection |
| US20180286643A1 (en) * | 2017-03-29 | 2018-10-04 | Tokyo Electron Limited | Advanced optical sensor, system, and methodologies for etch processing monitoring |
| KR20200015775A (ko) * | 2017-07-17 | 2020-02-12 | 에이에스엠엘 네델란즈 비.브이. | 정보 결정 장치 및 방법 |
-
2019
- 2019-11-05 GB GBGB1916079.5A patent/GB201916079D0/en not_active Ceased
-
2020
- 2020-05-12 CN CN202010396811.3A patent/CN112786423B/zh active Active
- 2020-08-07 JP JP2020134511A patent/JP7328944B2/ja active Active
- 2020-08-21 US US17/000,243 patent/US11710670B2/en active Active
- 2020-10-05 TW TW109134345A patent/TWI887272B/zh active
- 2020-10-05 KR KR1020200128389A patent/KR102917539B1/ko active Active
- 2020-10-16 EP EP20202400.6A patent/EP3819927B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3819927A1 (en) | 2021-05-12 |
| US11710670B2 (en) | 2023-07-25 |
| CN112786423B (zh) | 2025-07-15 |
| KR20210054447A (ko) | 2021-05-13 |
| KR102917539B1 (ko) | 2026-01-23 |
| TWI887272B (zh) | 2025-06-21 |
| JP7328944B2 (ja) | 2023-08-17 |
| CN112786423A (zh) | 2021-05-11 |
| EP3819927B1 (en) | 2022-06-15 |
| TW202131374A (zh) | 2021-08-16 |
| JP2021077859A (ja) | 2021-05-20 |
| US20210134684A1 (en) | 2021-05-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AT | Applications terminated before publication under section 16(1) |