TWI887272B - 用於對一基板進行電漿蝕刻之設備及方法 - Google Patents

用於對一基板進行電漿蝕刻之設備及方法 Download PDF

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Publication number
TWI887272B
TWI887272B TW109134345A TW109134345A TWI887272B TW I887272 B TWI887272 B TW I887272B TW 109134345 A TW109134345 A TW 109134345A TW 109134345 A TW109134345 A TW 109134345A TW I887272 B TWI887272 B TW I887272B
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TW
Taiwan
Prior art keywords
substrate
feature
camera
plasma etching
etching process
Prior art date
Application number
TW109134345A
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English (en)
Chinese (zh)
Other versions
TW202131374A (zh
Inventor
奧利薇 安塞爾
摩伊士 哈利 戈登
Original Assignee
英商Ｓｐｔｓ科技公司
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Publication of TW202131374A publication Critical patent/TW202131374A/zh
Application granted granted Critical
Publication of TWI887272B publication Critical patent/TWI887272B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination or light collection take place in the same area of the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing & Machinery (AREA)
TW109134345A 2019-11-05 2020-10-05 用於對一基板進行電漿蝕刻之設備及方法 TWI887272B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1916079.5 2019-11-05
GBGB1916079.5A GB201916079D0 (en) 2019-11-05 2019-11-05 Apparatus and method

Publications (2)

Publication Number Publication Date
TW202131374A TW202131374A (zh) 2021-08-16
TWI887272B true TWI887272B (zh) 2025-06-21

Family

ID=68807187

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109134345A TWI887272B (zh) 2019-11-05 2020-10-05 用於對一基板進行電漿蝕刻之設備及方法

Country Status (7)

Country Link
US (1) US11710670B2 (https=)
EP (1) EP3819927B1 (https=)
JP (1) JP7328944B2 (https=)
KR (1) KR102917539B1 (https=)
CN (1) CN112786423B (https=)
GB (1) GB201916079D0 (https=)
TW (1) TWI887272B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240043989A1 (en) * 2020-12-31 2024-02-08 3M Innovative Properties Company Metallic Nanohole Arrays on Nanowells with Controlled Depth and Methods of Making the Same
US11908716B2 (en) 2021-05-14 2024-02-20 Applied Materials, Inc. Image-based in-situ process monitoring
JP7645139B2 (ja) * 2021-06-22 2025-03-13 東京エレクトロン株式会社 検査方法及び検査システム
KR102740869B1 (ko) 2021-12-30 2024-12-09 세메스 주식회사 포토 마스크 보정 장치 및 방법
US12046522B2 (en) * 2022-02-18 2024-07-23 Applied Materials, Inc. Endpoint detection in low open area and/or high aspect ratio etch applications

Citations (5)

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Publication number Priority date Publication date Assignee Title
US4479848A (en) * 1983-02-14 1984-10-30 Hitachi, Ltd. Etching method and apparatus
US20180259848A1 (en) * 2017-03-13 2018-09-13 Applied Materials, Inc. Etch processing system having reflective endpoint detection
US20180261481A1 (en) * 2017-03-10 2018-09-13 Toshiba Memory Corporation Sensing system, sensing wafer, and plasma processing apparatus
US20180286643A1 (en) * 2017-03-29 2018-10-04 Tokyo Electron Limited Advanced optical sensor, system, and methodologies for etch processing monitoring
TW201908715A (zh) * 2017-07-17 2019-03-01 荷蘭商Ａｓｍｌ荷蘭公司 資訊判定設備及方法

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JPH066797B2 (ja) * 1985-03-11 1994-01-26 株式会社日立製作所 エツチングの終点検出方法
JP2595083B2 (ja) * 1988-06-08 1997-03-26 株式会社日立製作所 配線形成方法及びその装置
JPH03283615A (ja) * 1990-03-30 1991-12-13 Hitachi Electron Eng Co Ltd エッチング・モニタ方式
US5450205A (en) 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
JP4444428B2 (ja) 2000-01-28 2010-03-31 東京エレクトロン株式会社 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
US7101805B2 (en) 2003-05-09 2006-09-05 Unaxis Usa Inc. Envelope follower end point detection in time division multiplexed processes
US20050020073A1 (en) 2003-07-22 2005-01-27 Lam Research Corporation Method and system for electronic spatial filtering of spectral reflectometer optical signals
JP4371999B2 (ja) 2004-12-28 2009-11-25 パナソニック株式会社 ドライエッチング方法及びドライエッチング装置
JP2006186222A (ja) 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd プラズマ処理装置
TWI388936B (zh) * 2006-10-30 2013-03-11 應用材料股份有限公司 光罩蝕刻之終點偵測
US8009938B2 (en) * 2008-02-29 2011-08-30 Applied Materials, Inc. Advanced process sensing and control using near infrared spectral reflectometry
US8709268B2 (en) 2011-11-14 2014-04-29 Spts Technologies Limited Etching apparatus and methods
GB201119598D0 (en) 2011-11-14 2011-12-28 Spts Technologies Ltd Etching apparatus and methods
JP6033453B2 (ja) 2012-10-17 2016-11-30 東京エレクトロン株式会社 多変量解析を用いたプラズマエンドポイント検出
US9543225B2 (en) 2014-04-29 2017-01-10 Lam Research Corporation Systems and methods for detecting endpoint for through-silicon via reveal applications
JP2017168625A (ja) 2016-03-16 2017-09-21 住友電気工業株式会社 面発光半導体レーザを作製する方法
US10269545B2 (en) 2016-08-03 2019-04-23 Lam Research Corporation Methods for monitoring plasma processing systems for advanced process and tool control
US10438825B2 (en) 2016-08-29 2019-10-08 Kla-Tencor Corporation Spectral reflectometry for in-situ process monitoring and control

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US4479848A (en) * 1983-02-14 1984-10-30 Hitachi, Ltd. Etching method and apparatus
US20180261481A1 (en) * 2017-03-10 2018-09-13 Toshiba Memory Corporation Sensing system, sensing wafer, and plasma processing apparatus
US20180259848A1 (en) * 2017-03-13 2018-09-13 Applied Materials, Inc. Etch processing system having reflective endpoint detection
US20180286643A1 (en) * 2017-03-29 2018-10-04 Tokyo Electron Limited Advanced optical sensor, system, and methodologies for etch processing monitoring
TW201908715A (zh) * 2017-07-17 2019-03-01 荷蘭商Ａｓｍｌ荷蘭公司 資訊判定設備及方法

Also Published As

Publication number Publication date
EP3819927A1 (en) 2021-05-12
US11710670B2 (en) 2023-07-25
CN112786423B (zh) 2025-07-15
KR20210054447A (ko) 2021-05-13
KR102917539B1 (ko) 2026-01-23
JP7328944B2 (ja) 2023-08-17
CN112786423A (zh) 2021-05-11
GB201916079D0 (en) 2019-12-18
EP3819927B1 (en) 2022-06-15
TW202131374A (zh) 2021-08-16
JP2021077859A (ja) 2021-05-20
US20210134684A1 (en) 2021-05-06

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