CN112753290A - λ/4型电波吸收体 - Google Patents

λ/4型电波吸收体 Download PDF

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Publication number
CN112753290A
CN112753290A CN201980061572.1A CN201980061572A CN112753290A CN 112753290 A CN112753290 A CN 112753290A CN 201980061572 A CN201980061572 A CN 201980061572A CN 112753290 A CN112753290 A CN 112753290A
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China
Prior art keywords
wave absorber
dielectric layer
support
layer
radio wave
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Pending
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CN201980061572.1A
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English (en)
Inventor
武藤胜纪
中尾幸子
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Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
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Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Publication of CN112753290A publication Critical patent/CN112753290A/zh
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    • H—ELECTRICITY
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    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073—Shielding materials
    • H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
    • H05K9/0084—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a single continuous metallic layer on an electrically insulating supporting structure, e.g. metal foil, film, plating coating, electro-deposition, vapour-deposition
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Abstract

本发明的技术问题在于：提供具有支撑体、电阻被膜、电介质层和反射层，并且具备较高的电波吸收性能的λ/4型电波吸收体。该问题通过下述技术方案而得到解决：一种λ/4型电波吸收体，其中，所述电波吸收体具有支撑体、电阻被膜、电介质层和反射层，并且满足式(1)：‑0.375x+1086.9<y<‑0.375x+1140(式中，x表示电阻被膜的电阻值，y表示为y＝支撑体的厚度×(支撑体的相对介电常数)0 . 5+电介质层的厚度×(电介质层的相对介电常数)0 . 5)。

Description

λ/4型电波吸收体
[技术领域]
本发明涉及λ/4型电波吸收体等。
[背景技术]
近年，移动电话、智能手机等的便携通信机器的普及得到了迅猛发展，并且在车辆等中搭载有大量的电子机器，而由这些产生的电波·噪声导致了电波干扰、其他电子机器的误操作等的问题。作为防止这样的电波干扰、误操作等的方法，研究了各种电波吸收体。例如，专利文献1公开了：在60～90GHz的频率域中电磁波吸收量为20dB以上的频率域的带宽为2GHz以上的电磁波吸收体。
[现有技术文献]
[专利文献]
[专利文献1]日本特开第2018-098367号公报
[发明内容]
[发明所解决的技术问题]
以往λ/4型电波吸收体中，电阻被膜的电阻值接近377Ω，电介质层的厚度设为特定的值，对于提高吸收性能而言是重要的。然而，本发明人在研究中发现：在具有支撑体的构成中，在安装吸收体时吸收性能可能受到损害，即，仅研究电介质层的厚度和电阻被膜的电阻值无法得到充分的吸收性能。
因此，本发明的技术问题在于：提供具有支撑体、电阻被膜、电介质层和反射层，并且具备较高的电波吸收性能的λ/4型电波吸收体。
[解决问题的技术手段]
本发明人在研究中发现了：支撑体的厚度和相对介电常数都会影响吸收特性。基于这样的知识，进一步研究而发现了：根据支撑体的相对介电常数和厚度、电阻被膜和反射层间的相对介电常数和距离，而使得适宜的电阻被膜的电阻值范围有所不同。
基于这些发现而深入研究的结果，本发明人发现了：当采用下述λ/4型电波吸收体时，能够解决所述问题，其中，所述电波吸收体具有支撑体、电阻被膜、电介质层和反射层，并且满足式(1)：-0.375x+1086.9<y<-0.375x+1140(式中，x表示电阻被膜的电阻值，y表示为y＝支撑体的厚度×(支撑体的相对介电常数)0.5+电介质层的厚度×(电介质层的相对介电常数)0.5)。本发明人基于该发现而进一步研究的结果，完成了本发明。
即，本发明包含下述的方式。
项1.一种λ/4型电波吸收体，其中，所述电波吸收体具有支撑体、电阻被膜、电介质层和反射层，并且满足下述式(1)，
式(1)：-0.375x+1086.9<y<-0.375x+1140
(式中，x表示电阻被膜的电阻值，y表示为y＝支撑体的厚度×(支撑体的相对介电常数)0.5+电介质层的厚度×(电介质层的相对介电常数)0.5)
项2.项1所述的λ/4型电波吸收体，其中，所述电阻被膜的电阻值为200Ω/□以上500Ω/□以下。
项3.项1或2所述的λ/4型电波吸收体，其中，所述电介质层的相对介电常数为1以上10以下。
项4.项1～3中任一项所述的λ/4型电波吸收体，其中，所述支撑体的厚度为15μm以上200μm以下。
项5.项1～4中任一项所述的λ/4型电波吸收体，其中，所述支撑体的相对介电常数为1以上10以下。
项6.项1～5中任一项所述的λ/4型电波吸收体，其中，所述电阻被膜含有钼。
项7.项6所述的λ/4型电波吸收体，其中，所述电阻被膜还含有镍和铬。
项8.项1～7中任一项所述的λ/4型电波吸收体，其中，所述电介质层包含粘接剂层。
项9.项1～8中任一项所述的λ/4型电波吸收体，其中，在所述电阻被膜的至少一个表面上还具有阻隔层。
项10.项1～9中任一项所述的λ/4型电波吸收体，其中，所述反射层的电介质层侧的表面上的表面粗糙度Rz为1μm以上10μm以下。
项11.一种λ/4型电波吸收体用部件，其具有支撑体、电阻被膜和电介质层，并且满足下述式(1)
[式(1)：-0.375x+1086.9<y<-0.375x+1140(式中，x表示电阻被膜的电阻值，y表示为y＝支撑体的厚度×(支撑体的相对介电常数)0.5+电介质层的厚度×(电介质层的相对介电常数)0.5)]
[发明的效果]
根据本发明，能够提供：具有支撑体、电阻被膜、电介质层和反射层，并且具备较高的电波吸收性能的λ/4型电波吸收体。
[附图说明]
[图1]表示电波吸收性的评价结果。纵轴表示式(1)的y的值，横轴表示式(1)的x的值。
[图2]是表示本发明的电波吸收体的一个实例的概要截面图。
[图3]上方的图是表示本发明的电波吸收体用部件的一个实例的概要截面图。下方是表示以与该部件接触的方式配置并且可作为反射层而发挥功能的被粘体的一个实例的概要截面图。
[图4]是表示本发明的电波吸收体的用途的一个实例(介由粘接剂而配置在壳体上而成的方式的一个实例)的概要截面图。
[本发明的具体实施方式]
本说明书中，“含有”和“包含”等表现包含：“含有”、“包含”、“实际上包含”和“仅包含”这样的概念。
本发明涉及λ/4型电波吸收体(本说明书中，有时记载为“本发明的电波吸收体”)，其一实施方式中，所述电波吸收体具有支撑体、电阻被膜、电介质层和反射层，并且满足式(1)：-0.375x+1086.9<y<-0.375x+1140(式中，x表示电阻被膜的电阻值，y表示为y＝支撑体的厚度×(支撑体的相对介电常数)0 . 5+电介质层的厚度×(电介质层的相对介电常数)0.5)。下文中，对其进行说明。
<1.支撑体>
支撑体只要是片状的，就没有特别限定。作为支撑体，没有特别限定，例如可举出树脂基材。可通过支撑体，保护电阻被膜，提高作为电波吸收体的耐久性。
树脂基材是包含树脂作为原材料的基材，其只要是片状的，就没有特别限定。树脂基材，在不显著损害本发明的效果的情况下，可包含树脂以外的成分。例如，从调整相对介电常数的观点出发，可包含氧化钛等。
该情况下，树脂基材中的树脂的合计量，例如为80质量％以上，优选为90质量％以上，更优选为95质量％以上，进一步优选为99质量％以上，通常不足100质量％。
作为树脂，没有特别限制，例如可举出：聚对苯二甲酸乙二醇酯(PET)、聚乙烯萘二甲酸酯、改性聚酯等的聚酯类树脂、聚乙烯(PE)树脂、聚丙烯(PP)树脂、聚苯乙烯树脂、环状烯烃类树脂等的聚烯烃类树脂、聚氯乙烯、聚偏二氯乙烯等的乙烯基类树脂、聚乙烯醇缩丁醛(PVB)等的聚乙烯醇缩醛树脂、聚醚醚酮(PEEK)树脂、聚砜(PSF)树脂、聚醚砜(PES)树脂、聚碳酸酯(PC)树脂、聚酰胺树脂、聚酰亚胺树脂、丙烯酸类树脂、三乙酸纤维素(TAC)树脂等。这些可单独使用1种或组合使用2种以上。
这些中，从生产性、强度的观点出发，优选可举出聚酯类树脂，更优选可举出聚对苯二甲酸乙二醇酯。
支撑体的相对介电常数只要可满足后述的式(1)，就没有特别限定。支撑体的相对介电常数，例如为1以上20以下，优选为1以上15以下，更优选为1以上10以下。
为了调整支撑体的相对介电常数以满足后述的式(1)，优选含有氧化钛、二氧化硅、钛酸钡、氧化铝、氧化锆等的添加剂。从耐候性的观点出发，优选为氧化钛。
所述添加剂在支撑体中的含量，没有特别限定，优选为8重量％以上20重量％以下，更优选为9重量％以上15重量％以下。从强度的观点出发，优选为20％以下，从耐候性的观点出发，优选为8％以上。
支撑体的厚度只要可满足后述的式(1)，就没有特别限定。支撑体的厚度，例如为5μm以上500μm以下，优选为10μm以上300μm以下，更优选为20μm以上300μm以下。
支撑体的层构成没有特别限定。支撑体可以由单独1种支撑体构成，也可以由2种以上支撑体组合而成。
<2.电阻被膜>
电阻被膜只要可在电波吸收体中作为电阻层发挥功能，就没有特别限定。
<2-1.含有ITO的电阻被膜>
作为电阻被膜，例如可使用氧化铟锡(以下设为“ITO”)。尤其是，从非晶质结构极其稳定，并且在高温湿度大的环境下以能够抑制电阻被膜的片电阻的变动的观点出发，优选使用含有20～40重量％的SnO2的，更优选使用含有含25～35重量％的SnO2的ITO的(电阻被膜中，例如为50质量％以上，优选为70质量％以上，更优选为90质量％以上，进一步优选为95质量％以上，通常不足100质量％)。
<2-2.含钼电阻被膜>
作为电阻被膜，从易于调整耐久性、电阻率的观点出发，优选使用含有钼的电阻被膜。钼的含量的下限没有特别限定，从进一步提高耐久性的观点出发，优选为5重量％，更优选为7重量％，进一步优选为9重量％，更进一步优选为11重量％，特别优选为13重量％，非常优选为15重量％，最优选为16重量％。此外，所述钼的含量的上限，从易于进行表面电阻值的调整的观点出发，优选为30重量％，更优选为25重量％，进一步优选为20重量％。
所述电阻被膜，在含有钼的情况下，更优选进一步含有镍和铬。通过向电阻被膜添加钼并含有镍和铬，而能够设为耐久性优异的λ/4型电波吸收体。作为含有镍、铬和钼的合金，例如可举出：哈氏合金B-2、B-3、C-4、C-2000、C-22、C-276、G-30、N、W、X等的各种等级。
在所述电阻被膜含有钼、镍和铬的情况下，优选钼的含量为5重量％以上，镍的含量为40重量％以上，铬的含量为1重量％以上。钼、镍和铬的含量为所述范围内时，能够设为耐久性更为优异的λ/4型电波吸收体。所述钼、镍和铬的含量，更优选钼含量为7重量％以上，镍含量为45重量％以上，铬含量为3重量％以上。所述钼、镍和铬的含量，进一步优选钼含量为9重量％以上，镍含量为47重量％以上，铬含量为5重量％以上。所述钼、镍和铬的含量，更进一步优选钼含量为11重量％以上，镍含量为50重量％以上，铬含量为10重量％以上。所述钼、镍和铬的含量，特别优选钼含量为13重量％以上，镍含量为53重量％以上，铬含量为12重量％以上。所述钼、镍和铬的含量，非常优选钼含量为15重量％以上，镍含量为55重量％以上，铬含量为15重量％以上。所述钼、镍和铬的含量，最优选钼含量为16重量％以上，镍含量为57重量％以上，铬含量为16重量％以上。此外，所述镍的含量优选为80重量％以下，更优选为70重量％以下，进一步优选为65重量％以下。所述铬含量的上限，优选为50重量％以下，更优选为40重量％以下，进一步优选为35重量％以下。
所述电阻被膜可含有所述钼、镍和铬以外的金属。作为这样的金属，例如可举出：铁、钴、钨、锰、钛等。在所述电阻被膜含有钼、镍和铬的情况下，所述钼、镍和铬以外的金属的总含量的上限，从电阻被膜的耐久性的观点出发，优选为45重量％，更优选为40重量％，进一步优选为35重量％，更进一步优选为30重量％，特别优选为25重量％，非常优选为23重量％。所述钼、镍和铬以外的金属的总含量的下限，例如为1重量％以上。
在所述电阻被膜含有铁的情况下，从电阻被膜的耐久性的观点出发，含量的优选的上限为25重量％，更优选上限为20重量％，进一步优选的上限为15重量％，优选的下限为1重量％。在所述电阻被膜含有钴和/或锰的情况下，从电阻被膜的耐久性的观点出发，分别独立地，含量的优选的上限为5重量％，更优选上限为4重量％，进一步优选的上限为3重量％，优选的下限为0.1重量％。在所述电阻被膜含有钨的情况下，从电阻被膜的耐久性的观点出发，含量的优选的上限为8重量％，更优选上限为6重量％，进一步优选的上限为4重量％，优选的下限为1重量％。
所述电阻被膜可含有硅和/或碳。在电阻被膜含有硅和/或碳的情况下，所述硅和/或碳的含量，分别独立地，优选为1重量％以下，更优选为0.5重量％以下。此外，在电阻被膜含有硅和/或碳的情况下，所述硅和/或碳的含量优选为0.01重量％以上。
电阻被膜的电阻值，只要满足后述的式(1)，就没有特别限定。电阻被膜的电阻值，例如为100Ω/□以上Ω/□以下，优选为150Ω/□以上1000Ω/□以下，更优选为200Ω/□以上600Ω/□以下，进一步优选为250Ω/□以上450Ω/□以下。
电阻被膜的厚度，只要可得到满足后述的式(1)的电阻值，就没有特别限定。电阻被膜的厚度，例如为1nm以上200nm以下，优选为2nm以上100nm以下，更优选为2nm以上50nm以下。
电阻被膜的层构成没有特别限定。电阻被膜可以由单独1种电阻被膜构成，也可以由2种以上的电阻被膜组合而成。
<3.电介质层>
电介质层，只要对于电波吸收体中目标波长可作为电介质而发挥功能，就没有特别限定。作为电介质层，没有特别限定，例如可举出树脂片、粘接剂等。
树脂片，只要是含有树脂作为原材料的片状材料，就没有特别限定。树脂片，在不显著损害本发明的效果的情况下，可包含树脂以外的成分。该情况下，树脂片中的树脂的合计量，例如为50质量％以上，优选为70质量％以上，更优选为90质量％以上，进一步优选为95质量％以上，通常不足100质量％。
作为树脂，没有特别限制，例如优选将乙烯乙酸乙烯酯共聚物(EVA)、氯乙烯、氨基甲酸酯、丙烯酸、丙烯酸氨基甲酸酯、聚烯烃、聚乙烯、聚丙烯、聚硅氧烷、聚对苯二甲酸乙二醇酯、聚酯、聚苯乙烯、聚酰亚胺、聚碳酸酯、聚酰胺、聚砜、聚醚砜、环氧等的合成树脂、聚异戊二烯橡胶、聚苯乙烯·丁二烯橡胶、聚丁二烯橡胶、氯丁二烯橡胶、丙烯腈·丁二烯橡胶、丁基橡胶、丙烯酸橡胶、乙烯·丙烯橡胶和硅橡胶等的合成橡胶材料用作树脂成分。这些可单独使用1种或组合使用2种以上。
电介质层可以为树脂片、发泡体、粘接剂。从电介质层的厚度精度的观点出发，优选为树脂片、粘接剂。
电介质层可具有粘合性。因此，在将不具有粘合性的电介质通过粘接剂层与其他层进行叠层的情况下，将该电介质与粘接剂层组合而成的层称为“电介质层”。从易于与相邻的层叠层这样的观点出发，电介质层优选包含粘接剂层。
电介质层的相对介电常数，只要能够满足后述的式(1)，就没有特别限定。电介质层的相对介电常数，例如为1以上20以下，优选为1以15以下，更优选为1以上10以下。
电介质层的厚度，只要能够满足后述的式(1)，就没有特别限定。电介质层的厚度，例如为10μm以上2000μm以下，优选为100μm以上1500μm以下，更优选为200μm以上800μm以下。
电介质层的层构成没有特别限定。电介质层，可以由单独1种电介质层构成，也可以由2种以上的电介质层组合而成。例如，可举出：由不具有粘合性的电介质及配置在其两面的粘接剂层构成的3层结构的电介质层；由具有粘合性的电介质构成的1层结构的电介质层等。
<4.反射层>
反射层，只要能够在电波吸收体中作为电波的反射层而发挥功能，就没有特别限定。作为反射层，没有特别限定，例如可举出金属膜。
金属膜，只要是包含金属作为原材料的层，就没有特别限定。金属膜，在不会显著损害本发明的效果的情况下，可包含金属以外的成分。这样的情况下，金属膜中的金属的合计量，例如为30质量％以上，优选为50质量％以上，更优选为75质量％以上，进一步优选为80质量％以上，更优选为90质量％以上，特别优选为95质量％以上，非常优选为99质量％以上，通常不足100质量％。
作为金属，没有特别限制，例如可举出：铝、铜、铁、银、金、铬、镍、钼、镓、锌、锡、铌、铟等。此外，可以将金属化合物例如ITO等用作金属膜的原材料。这些可以单独使用1种，或组合使用2种以上。
反射层的厚度，没有特别限定。反射层的厚度，例如为1μm以上500μm以下，优选为2μm以上200μm以下，更优选为5μm以上100μm以下。
本发明的优选的一实施方式中反射层的电介质层侧的表面上的表面粗糙度Rz优选为1μm以上10μm以下。通过为该范围内，能够发挥电介质层与反射层的良好的密合性，并且能够发挥更为良好的电波吸收性。该表面粗糙度Rz，优选为1μm以上8μm以下，更优选为1μm以上5μm以下。
本发明的优选的一实施方式中，反射层的与电介质层侧相反的一侧的表面的表面粗糙度Rz为1μm以上。由此，能够发挥与叠层在反射层的与电介质层侧相反的一侧的层(例如，粘接剂层)的良好的密合性，而能够将本发明的λ/4型电波吸收体更容易地安装在其他部件(例如，车辆内的设备等)。该表面粗糙度Rz，优选为30μm以下，更优选为2μm以上15μm以下。
反射层的表面粗糙度Rz可通过下述方式进行测定。可通过彩色3D激光显微镜(VK8710(KEYENCE公司制)或其同等品)进行反射层表面的凹凸的测定来测量表面粗糙度Rz。具体而言，可基于JIS B0601：2001，使用物镜50倍，在反射层表面的任意5处测定10μm×10μm范围内的Rz，并求得其平均值。
反射层的表面粗糙度Rz，可通过或基于调整表面粗糙度的公知的调整方法来进行调节。例如，可通过基于金属镀敷技术的微金属粒子的赋予、通过物理·化学性方法来削切表面的方法等进行调整。
反射层的层构成没有特别限定。反射层可以由单独1种反射层构成，也可以由2种以上的反射层组合而成。
<5.层构成、其他层>
本发明的电波吸收体中，各层以能够发挥电波吸收性能的顺序进行配置。作为一个实例，以支撑体、电阻被膜、电介质层和反射层的顺序进行配置。
本发明的电波吸收体中，除了支撑体、电阻被膜、电介质层和反射层以外，可包含其他层。其他层可配置在支撑体、电阻被膜、电介质层和反射层各层的任一表面上。
从耐久性的观点出发，本发明的电波吸收体优选在电阻被膜的至少一个表面上进一步具有阻隔层。对于阻隔层，在下文中进行详述。
<5-1.阻隔层>
阻隔层，只要是能够保护电阻被膜，抑制其劣化的层，就没有特别限定。作为阻隔层的原材料，例如可举出：金属化合物、半金属化合物、优选金属或半金属的氧化物、氮化物、氮氧化物等。阻隔层，在不显著影响本发明的效果的情况下，可包含所述原材料以外的成分。这样的情况下，阻隔层中的所述原材料量，例如为80质量％以上，优选为90质量％以上，更优选为95质量％以上，进一步优选为99质量％以上，通常不足100质量％。
作为金属，例如可举出钛、铝、铌、钴、镍等。作为半金属，例如可举出硅、锗、锑、铋等。
作为所述氧化物，例如可举出：MOX[式中，X为满足式：n/100≤X≤n/2(n为金属的价数)的数，M为金属元素]表示的化合物。
作为所述氮化物，例如可举出：MNy[式中，Y为满足式：n/100≤Y≤n/3(n为金属的价数)的数，M为金属元素]表示的化合物。
作为所述氮氧化物，例如可举出：MOXNy[式中，X和Y为n/100≤X，n/100≤Y，并且X+Y<n/2(n为金属的价数)，M为金属元素]表示的化合物。
关于所述氧化物或氮氧化物的氧化数X，例如可通过将包含MOx或MOxNy的层的截面通过FE-TEM-EDX(例如，日本电子公司制“JEM-ARM200F”)进行元素分析，根据包含MOx或MOxNy的层的截面的单位面积的M和O的元素比例来计算X，从而计算氧原子的价数。
关于所述氮化物或氮氧化物的氮化数Y，例如可通过将包含MNy或MOxNy的层的截面通过FE-TEM-EDX(例如，日本电子公司制“JEM-ARM200F”)进行元素分析，根据包含MNy或MOxNy的层的截面的单位面积的M和N的元素比例来计算Y，从而计算氮原子的价数。
作为阻隔层的原材料的具体例，可举出：SiO2、SiOx、Al2O3、MgAl2O4、CuO、CuN、TiO2、TiN、AZO(铝掺杂氧化锌)等。
阻隔层的厚度，没有特别限定。阻隔层的厚度，例如为1nm以上200nm以下，优选为1nm以上100nm以下，更优选为1nm以上20nm以下。
阻隔层的层构成没有特别限定。阻隔层可以由单独1种阻隔层构成，也可以由2种以上的阻隔层组合而成。
<6.式(1)>
本发明的电波吸收体，满足式(1)：-0.375x+1086.9<y<-0.375x+1140(式中，x表示电阻被膜的电阻值，y表示为y＝支撑体的厚度×(支撑体的相对介电常数)0.5+电介质层的厚度×(电介质层的相对介电常数)0.5)。由此，具有支撑体、电阻被膜、电介质层和反射层，并且能够发挥较高的电波吸收性。
本发明的电波吸收体的优选的一实施方式中，满足式(1’)：-0.375x+1105<y<-0.375x+1125(式中，x表示电阻被膜的电阻值，y表示为y＝支撑体的厚度×(支撑体的相对介电常数)0.5+电介质层的厚度×(电介质层的相对介电常数)0 . 5)。由此，能够进一步发挥较高的电波吸收性。
电阻被膜的电阻值可使用表面电阻计(MITSUBISHI CHEMICAL ANAL YTECH公司制，商品名“Loresta-EP”)，通过4端子法进行测定。
支撑体的厚度和电介质层的厚度，可通过Nikon DIGIMICRO STANDM S-11C+NikonDIGIMICRO MFC-101进行测定。
支撑体的相对介电常数、电介质层的相对介电常数，可使用网络分析仪、空洞共振器等通过空洞共振器摄动法测定10GHz下的相对介电常数来进行测定。
“支撑体的厚度×(支撑体的相对介电常数)0.5”和“电介质层的厚度×(电介质层的相对介电常数)0.5”，在支撑体、电介质层包含多层的情况下，算出各层的值并计算合计值。例如，在电介质层包含电介质层1和电介质层2的情况下，将“电介质层1的厚度×(电介质层1的相对介电常数)0.5”和“电介质层2的厚度×(电介质层2的相对介电常数)0.5”相加来计算“电介质层的厚度×(电介质层的相对介电常数)0.5”。
式(1)中的y的范围，没有特别限定，优选为800以上1200以下，更优选为900以上1100以下，进一步优选为964以上1010以下。
<7.制造方法>
本发明的电波吸收体，例如可通过包含在支撑体上依次叠层电阻被膜、电介质层和反射层的工序的方法而得到。作为其他方法，可通过包含下述工序的方法而得到：在电介质层的一个面上叠层·形成电阻被膜的工序；在电阻被膜的不同于与电介质层接触的面的另一个面上叠层支撑体的工序；在电介质层的不同于与电阻被膜接触的面的另一个面上叠层反射层的工序。
叠层方法没有特别限定。
电阻被膜、阻隔层，例如，可通过溅射法、真空蒸镀法、离子镀法、化学蒸镀法、脉冲激光沉积法等进行。这些中，从膜厚控制性的观点出发，优选溅射法。作为溅射法，没有特别限定，例如，可举出：直流磁控溅射、高频磁控溅射和离子束溅射等。此外，溅射装置可以为批方式、卷对卷方式。
电介质层、反射层，例如可利用电介质层具有的粘合性来进行叠层。
<8.λ/4型电波吸收体用部件>
本发明的一实施方式中，涉及一种λ/4型电波吸收体用部件，其具有支撑体、电阻被膜和电介质层，并且满足下述式(1)[式(1)：-0.375x+1086.9<y<-0.375x+1140(式中，x表示电阻被膜的电阻值，y表示为y＝支撑体的厚度×(支撑体的相对介电常数)0.5+电介质层的厚度×(电介质层的相对介电常数)0.5)]。
λ/4型电波吸收体用部件，是用于将电介质层以与金属等可作为反射层而发挥功能的被粘体接触的方式进行配置来形成λ/4型电波吸收体的部件。支撑体、电阻被膜、电介质层、本发明的特性、其它的构成，与本发明的λ/4型电波吸收体中说明的同样。
<9.用途>
本发明的电波吸收体具有吸收不需要的电磁波的性能，因此可适用于例如车辆防撞系统中使用的毫米波雷达的电磁波吸收体。此外，作为其它的用途，可用于：在车辆、道路、人相互间进行信息通信的高度道路交通系统(ITS)、使用了毫米波的下一代移动通信系统(5G)中、电波干涉抑制、噪声降低。
本发明的电波吸收体的对象电波的频率，例如为20GHz以上100GHz以下，优选为50GHz以上90GHz以下。
[实施例]
下文中，基于实施例对本发明详细地进行说明，但是本发明不限于这些实施例。
(1)λ/4型电波吸收体的制造
(实施例1)
作为作为支撑体，厚度25μm的混入有氧化钛的聚对苯二甲酸乙二醇酯(PET)膜(含有TiO210％，相对介电常数3.2)。在所述PET膜上，通过DC脉冲溅射，形成厚度10nm并且电阻值380Ω/□的电阻被膜。溅射以下述方式进行：将合金(组成：钼16.4重量％，镍＿55.2重量％，铬18.9重量％，铁5.5重量％，钨3.5重量％，二氧化硅0.5重量％)作为靶标，输出0.4kW，Ar气体以流量100sccm导入并设为压力0.12Pa的方式进行调整。接着，在形成得到的电阻被膜上通过粘合胶带(丙烯酸两面粘合胶带，厚度30μm，相对介电常数2.6)而叠层厚度500μm并且相对介电常数2.7的包含聚碳酸酯的电介质，进一步在电介质上通过粘合胶带叠层厚度10μm的包含铝的反射层(电介质层侧的表面粗糙度Rz＝3.2)而得到λ/4型电波吸收体。
需要说明的是，电阻被膜的厚度，根据通过荧光X射线分析装置对金属薄膜表面照射X射线时发生的特性X射线的强度而测得单位面积的Cr含量，并根据靶标的组成比来进行计算。
(实施例2～9、比较例1～8)
支撑体的相对介电常数、支撑体厚度、电阻被膜的电阻值、电介质的相对介电常数、电介质的厚度等如表1和表2所示的进行变更，除此之外，以与实施例1同样的方式得到λ/4型电波吸收体。
(实施例10)
将电介质层设为无基材的丙烯酸两面粘合胶带(厚度500μm，相对介电常数2.4)，将支撑体的相对介电常数、支撑体厚度、电阻被膜的电阻值等如表1所示的进行变更，除此之外，以与实施例1同样的方式得到λ/4型电波吸收体。即，实施例10中具有“支撑体/电阻被膜/电介质层(丙烯酸粘合胶带)/反射层”的构成。
(实施例11～15)
将支撑体的相对介电常数、支撑体厚度、电阻被膜的电阻值、电介质的相对介电常数、电介质的厚度等如表3所示的进行变更，除此之外，以与实施例10同样的方式得到λ/4型电波吸收体。
(实施例16～20)
将反射层的各个表面上的表面粗糙度如表4所示的进行变更，除此之外以外，以与实施例2同样的方式得到λ/4型电波吸收体。
(实施例21)
作为支撑体，使用厚度25μm的混入有氧化钛的聚对苯二甲酸乙二醇酯(PET)膜(含有TiO2 20％，相对介电常数3.4)，将反射层的各个表面上的表面粗糙度如表4所示的进行变更，除此之外，以与实施例2的方式得到λ/4型电波吸收体。
需要说明的是，反射层的各个表面上的表面粗糙度Rz，通过彩色3D激光显微镜(VK8710(KEYENCE公司制)进行反射层表面的凹凸的测定并进行计算。基于JISB0601：2001，对于反射层表面的任意的5处以物镜50倍进行测定，测定10μm×10μm范围内的Rz，并求得其平均值。
(2)电波吸收性的评价
使用PNA微波网络·分析仪N5227A(KEYSIGHT公司制)、PNA-X系列2端口用毫米波控制器N5261A(KEYSIGHT公司制)、Horn Antenna FSS-07(HVS公司制)构成电波吸收测定装置。使用该电波吸收测定装置，基于JIS R1679对得到的λ/4型电波电磁波吸收体的W带(75～110GHz)的电波吸收量进行测定。需要说明的是，λ/4型电波吸收体设置为：电波入射方向垂直并且从支撑体侧进行入射。对于得到的吸收量，通过以下的评价基准评价电磁波吸收性能。
◎：吸收量为30dB以上
○：吸收量不足30dB并且为20dBdb以上
×：吸收量不足20dB并且为15以上
××：吸收量不足15dB。
(3)密合性的评价
(3-1)粘接力(电介质层/反射层)的评价
将得到的电波吸收体剪切为10mm宽的短册状而制备试验片，使电介质层的与面向反射层的一侧相反的一侧露出。对于露出的面，通过两面粘合胶带(9708、3M公司制)固定于测定装置的基座。将该试验样品的反射层基于JIS Z0237以剥离速度300mm/分钟进行180°方向的拉伸试验，测定180°粘接力(N/10mm)。将电介质层/反射层间的粘接力为5N/10mm以上的情况设为〇，不足5N/10mm的情况设为×。
(3-2)粘接力(反射层/粘合层)的评价
将得到的电波吸收体剪切为10mm宽的短册状而制备试验片，使反射层的面向电介质的一侧露出。接下来，在反射层的与面向电介质的一侧相反的面上贴附10mm宽的短册状的两面粘合胶带(9708、3M公司制)。通过两面粘合胶带的外侧的面而固定于测定装置的基座。将该反射层基于JIS Z0237以剥离速度300mm/分钟进行180°方向的拉伸试验，测定180°粘接力(N/10mm)。将粘接力为5N/10mm以上的情况设为〇，不足5N/10mm的情况设为×。
实施例1～10的结果如表1表示，比较例的结果如表2表示，实施例11～15的结果如表3表示，实施例16～21的结果与实施例2的结果一同示于表4。此外，表1～表3的结果以图表表示于图1。表1～4中，“是否满足式1”，将满足式(1)：-0.375x+1086.9<y<-0.375x+1137.5(式中，x表示电阻被膜的电阻值，y表示为y＝支撑体的厚度×(支撑体的相对介电常数)0.5+电介质层的厚度×(电介质层的相对介电常数)0.5)的情况表示为○，不满足的情况表示为×。需要说明的是，应用于式(1)时，粘合胶带也作为构成电介质层的层进行判定。
此外，表1～4中，厚度的单元为μm。
Figure BDA0002983972260000151
Figure BDA0002983972260000161
Figure BDA0002983972260000171
Figure BDA0002983972260000181
[符号说明]
1 支撑体
2 电阻被膜
3 电介质层
4 反射层
5 粘接剂层
6 壳体

Claims (11)

1.一种λ/4型电波吸收体，其中，
所述电波吸收体具有支撑体、电阻被膜、电介质层和反射层，并且满足下述式(1)，
式(1)：-0.375x+1086.9<y<-0.375x+1140
式中，x表示电阻被膜的电阻值，y表示为y＝支撑体的厚度×(支撑体的相对介电常数)0.5+电介质层的厚度×(电介质层的相对介电常数)0.5。
2.根据权利要求1所述的λ/4型电波吸收体，其中，
所述电阻被膜的电阻值为200Ω/□以上500Ω/□以下。
3.根据权利要求1或2所述的λ/4型电波吸收体，其中，
所述电介质层的相对介电常数为1以上10以下。
4.根据权利要求1～3中任一项所述的λ/4型电波吸收体，其中，
所述支撑体的厚度为15μm以上200μm以下。
5.根据权利要求1～4中任一项所述的λ/4型电波吸收体，其中，
所述支撑体的相对介电常数为1以上10以下。
6.根据权利要求1～5中任一项所述的λ/4型电波吸收体，其中，
所述电阻被膜含有钼。
7.根据权利要求6所述的λ/4型电波吸收体，其中，
所述电阻被膜还含有镍和铬。
8.根据权利要求1～7中任一项所述的λ/4型电波吸收体，其中，
所述电介质层包含粘接剂层。
9.根据权利要求1～8中任一项所述的λ/4型电波吸收体，其中，
在所述电阻被膜的至少一个表面上还具有阻隔层。
10.根据权利要求1～9中任一项所述的λ/4型电波吸收体，其中，
所述反射层的电介质层侧的表面上的表面粗糙度Rz为1μm以上10μm以下。
11.一种λ/4型电波吸收体用部件，其具有支撑体、电阻被膜和电介质层，并且满足下述式(1)，
式(1)：-0.375x+1086.9<y<-0.375x+1140
式中，x表示电阻被膜的电阻值，y表示为y＝支撑体的厚度×(支撑体的相对介电常数)0.5+电介质层的厚度×(电介质层的相对介电常数)0.5。
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JP2018117073A (ja) * 2017-01-19 2018-07-26 日東電工株式会社 電磁波吸収体及び電磁波吸収構造
JP2018147999A (ja) * 2017-03-03 2018-09-20 日東電工株式会社 電磁波吸収体及び電磁波吸収体付成形品

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