CN110771273B - 电磁波吸收体及带有电磁波吸收体的成形品 - Google Patents
电磁波吸收体及带有电磁波吸收体的成形品 Download PDFInfo
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- CN110771273B CN110771273B CN201880039281.8A CN201880039281A CN110771273B CN 110771273 B CN110771273 B CN 110771273B CN 201880039281 A CN201880039281 A CN 201880039281A CN 110771273 B CN110771273 B CN 110771273B
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Abstract
电磁波吸收体(1)具备电介质层(10)、电阻层(20)、和导电层(30)。电阻层(20)配置于电介质层(10)的一个主面。导电层(30)配置于电介质层(10)的另一主面、具有比电阻层(20)的薄层电阻低的薄层电阻。电阻层(20)包含铟氧化物作为主成分并且具有多晶结构、具有260～500Ω/□的薄层电阻及5×10‑4Ω·cm以上的电阻率。
Description
技术领域
本发明涉及电磁波吸收体及带有电磁波吸收体的成形品。
背景技术
近年来，具有1～10mm左右的波长及30～300GHz的频率的毫米波、准毫米波的区域的电磁波被用作信息通信介质。正在研究这样的电磁波在防撞系统中的利用。防撞系统例如为车辆中检测障碍物并自动进行制动、或测定周边车辆的速度、车间距离并调节自己车辆的速度、车间距离的系统。对于防撞系统的正常工作，为了防止错误，重要的是尽可能不接收不需要的电磁波。因此，考虑在防撞系统中利用吸收不需要的电磁波的电磁波吸收体。
电磁波吸收体根据电磁波吸收的原理有各种各样的类型。例如，设置有电磁波反射层、具有λ/4(λ是作为吸收对象的电磁波的波长)的厚度的电介质层和电阻薄膜层的电磁波吸收体(有时称为“λ/4型电磁波吸收体”)的材料比较廉价、设计容易，因此能够以低成本进行制作。例如，专利文献1中，作为λ/4型电磁波吸收体，提出了发挥在遍及入射角度广的区域起到作用的特性的电磁波吸收体。
现有技术文献
专利文献
专利文献1：日本特开2003-198179号公报
发明内容
发明要解决的问题
专利文献1中，没有具体对电磁波吸收体在使用环境特有的耐久性(例如，耐化学药品性)进行研究。
因此，本发明提供具备对发挥良好的耐化学药品性有利的电阻层的电磁波吸收体。另外，本发明还提供具备这样的电磁波吸收体的带有电磁波吸收体的成形品。
用于解决问题的方案
本发明提供一种电磁波吸收体，其具备：
电介质层；
电阻层，其配置于前述电介质层的一个主面、包含铟氧化物作为主成分并且具有多晶结构；和
导电层，其配置于前述电介质层的另一主面、具有比前述电阻层的薄层电阻低的薄层电阻，
前述电阻层具有260～500Ω/□的薄层电阻及5×10-4Ω·cm以上的电阻率。
另外，本发明还提供一种带有电磁波吸收体的成形品，其具备：
成形品、和
安装于前述成形品的上述的电磁波吸收体。
发明的效果
对于上述的电磁波吸收体，电阻层具有良好的耐化学药品性。
附图说明
图1为示出本发明的电磁波吸收体的一例的截面图。
图2为示出本发明的带有电磁波吸收体的成形品的一例的截面图。
具体实施方式
以下，参照附图对本发明的实施方式进行说明。需要说明的是，下述的说明示例性地对本发明进行说明，本发明不限定于以下的实施方式。
本发明人等在研究电磁波吸收体在防撞系统中的利用的过程中新发现了以下的课题。例如，电磁波吸收体在防撞系统中使用的情况下，电磁波吸收体被配置于汽车等车辆。为了车辆的维护，有时使用洗涤剂等化学药品。例如，有时在车辆的清洗中使用碱性的溶液。因此，配置于车辆的电磁波吸收体有可能在车辆的清洗时接触到这样的化学药品。特别是，λ/4型电磁波吸收体中的电阻层由于位于电磁波吸收体的表面附近，因此容易受到这样的化学药品的影响。因此，若电磁波吸收体的电阻层具有良好的耐化学药品性，则能够提供高附加价值的λ/4型电磁波吸收体。
λ/4型电磁波吸收体中，电阻层的薄层电阻越接近空气的特性阻抗(约377Ω/□)，则越容易得到良好的电磁波吸收体。作为电阻层，考虑使用包含铟锡氧化物(ITO)等铟氧化物作为主成分的材料。ITO也可以在例如平板显示器及太阳能电池等技术领域中使用。在这样的技术领域中使用的ITO作为透明电极使用，因此当然具有低的电阻率(例如，4×10-4Ω·cm以下)。因此，利用这样的技术领域中使用的ITO形成λ/4型电磁波吸收体的电阻层的情况下，为了给电阻层赋予期望的薄层电阻，必须减薄电阻层的厚度(例如，不足15nm)。但是，若减薄电阻层的厚度，则变得难以实现良好的耐化学药品性。另外，难以稳定地生产这样薄的电阻层。
另外，在平板显示器及太阳能电池等技术领域中，作为透明电极使用的ITO由于电路图案化的形成的必要性，大多要求良好的蚀刻特性。因此，在这样的技术领域中优选使用非晶质结构的ITO。但是，即使在电阻层中使用这样的技术领域中使用的非晶质结构的ITO，也不易实现良好的耐化学药品性。
因此，本发明人等反复对电阻层中使用包含铟氧化物作为主成分的材料、并且能够实现良好的耐化学药品性的技术进行夜以继日的研究，提出了本发明的电磁波吸收体。
如图1所示，电磁波吸收体1具备：电介质层10、电阻层20、和导电层30。电阻层20配置于电介质层10的一个主面、包含铟氧化物作为主成分并且具有多晶结构。此外，电阻层20具有260～500Ω/□的薄层电阻及5×10-4Ω·cm以上的电阻率。导电层30配置于电介质层10的另一主面、具有比电阻层20的薄层电阻低的薄层电阻。需要说明的是，本说明书中，“主成分”是指以重量基准计含量最多的成分。典型的是，电阻层20中的铟氧化物的含量为50重量％以上。
电磁波吸收体1为λ/4型电磁波吸收体。λ/4型电磁波吸收体以如下方式来设计：若作为吸收对象的波长(λ0)的电磁波入射，则电阻层20的表面处的反射(表面反射)所产生的电磁波与导电层30中的反射(背面反射)所产生的电磁波发生干涉。需要说明的是，对于λ/4型电磁波吸收体，如下述的式(1)所示，吸收对象的电磁波的波长(λ0)由电介质层10的厚度(t)及电介质层10的相对介电常数(εr)决定。即，通过适宜调节电介质层10的材料及厚度，可以设定吸收对象的波长的电磁波。式(1)中，sqrt(εr)是指相对介电常数(εr)的平方根。
λ0＝4t×sqrt(εr) 式(1)
通过使电阻层20具有260～500Ω/□的薄层电阻，从而电阻层20接近空气的特性阻抗，电磁波吸收体1能够发挥良好的电磁波吸收特性。例如，变得容易选择性地吸收毫米波雷达或准毫米波雷达中通用的波长的电磁波。例如，电磁波吸收体1能够有效地使毫米波雷达中使用的50～100GHz、特别是60～90GHz的频率的电磁波衰减。另外，电阻层20包含铟氧化物作为主成分并且具有多晶结构，由此容易具有良好的耐化学药品性。此外，通过使电阻层20具有5×10-4Ω·cm以上的电阻率，从而即使电阻层20具有规定值以上的厚度，也能够给电阻层20赋予260～500Ω/□的薄层电阻。其结果，电磁波吸收体1能够发挥良好的电磁波吸收特性，并且电阻层20具有良好的耐化学药品性，进而电磁波吸收体1具有良好的耐化学药品性。
电阻层20例如具有5×10-3Ω·cm以下的电阻率。该情况下，能够防止对电阻层20赋予260～500Ω/□的薄层电阻所需的电阻层20的厚度变得过大。由此，电阻层20具有良好的耐化学药品性，并且能够缩短形成电阻层20所需的时间。
电阻层20例如具有15～200nm的厚度。由此，电阻层20具有良好的耐化学药品性，并且能够缩短形成电阻层20所需的时间。
电阻层20可以仅包含铟氧化物，也可以包含除铟氧化物以外的成分。电阻层20包含除铟氧化物以外的成分的情况下，电阻层20例如包含锡氧化物。电阻层20中的锡氧化物的含量例如不足5重量％。锡氧化物的含量不足5重量％的ITO具有比较高的电阻率，电阻层20具有5×10-4Ω·cm以上的电阻率。
电阻层20可以包含例如锡氧化物及杂质元素。该情况下，电阻层20中的锡氧化物的含量为5重量％以上并且不足13重量％。此外，电阻层20中的杂质元素的含量以重量％基准计比锡氧化物的含量少。即使为在电阻层20中锡氧化物的含量为5重量％以上并且不足13重量％的情况下，通过规定的杂质元素与锡氧化物共存，从而电阻层20也具有比较高的电阻率。其结果，电阻层20具有5×10-4Ω·cm以上的电阻率。
上述的杂质元素例如包含硅、镁、钛、及氮中的至少1者。由此，电阻层20具有比较高的电阻率。
电阻层20例如可以通过对使用具有规定的组成的靶材进行溅射而形成的膜进行加热处理(退火处理)来形成。该情况下，即使通过溅射形成的膜为非晶质结构，通过加热处理也能够形成具有多晶结构的电阻层20。需要说明的是，通过调节成膜温度等溅射的条件，从而在溅射后不进行加热处理也能够形成具有多晶结构的电阻层20。
如图1所示，电阻层20例如在与电介质层10接触的面处于相反侧的面层叠有高分子薄膜25。高分子薄膜25作为电阻层20的支撑体而发挥作用。对于高分子薄膜25，例如通过溅射制造电阻层20的情况下，理想的是由提供平滑的表面的材料形成。此外，高分子薄膜25由于以覆盖电阻层20的方式配置，因此如果高分子薄膜25具有高的耐化学药品性，电磁波吸收体1也具有高的耐化学药品性。因此，高分子薄膜25的材料例如为聚对苯二甲酸乙二醇酯(PET)及聚萘二甲酸乙二醇酯(PEN)等聚酯树脂、聚甲基丙烯酸甲酯(PMMA)等丙烯酸类树脂、聚碳酸酯(PC)、或环烯烃聚合物(COP)。其中，从良好的耐化学药品性与尺寸稳定性与成本的平衡的观点出发，电阻层20的支撑体的材料理想的是PET。
高分子薄膜25的厚度例如为10～150μm，理想的是20～100μm，更理想的是具有30～80μm的厚度。由此，高分子薄膜25的弯曲刚性低，并且在高分子薄膜25上形成电阻层20的情况下，能够抑制褶皱的产生或变形。
电介质层10例如具有1～10的相对介电常数。由此，电磁波吸收体1能够在宽的带宽(例如，50～100GHz的频带中包含的2GHz以上的带宽)中发挥良好的电磁波吸收性能。电介质层10的相对介电常数例如可以通过空腔谐振器摄动法来测定。
电介质层10可以为单一的层，也可以为多个层的层叠体。电介质层10为多个层的层叠体的情况下，电介质层10的相对介电常数可以如下来算出：测定各层的相对介电常数，将各层的厚度相对于电介质层10的整体的厚度的比例乘以所得各层的相对介电常数，将它们相加，由此算出。
电介质层10没有特别限制，例如，可以由高分子材料形成。例如，电介质层10的高分子材料为丙烯酸类树脂、乙烯-乙酸乙烯酯共聚物(EVA)、聚氯乙烯、聚氨酯、丙烯酸类氨基甲酸酯树脂、聚烯烃、聚丙烯、聚乙烯、有机硅树脂、聚对苯二甲酸乙二醇酯、聚酯、聚苯乙烯、聚酰亚胺、聚碳酸酯、聚酰胺、聚砜、聚醚砜、及环氧树脂等合成树脂(包含热塑性弹性体)、或聚异戊二烯橡胶、聚苯乙烯-丁二烯橡胶、聚丁二烯橡胶、氯丁二烯橡胶、丙烯腈丁二烯橡胶、丁基橡胶、丙烯酸类橡胶、乙烯丙烯橡胶、及有机硅橡胶等合成橡胶。这些可以单独或组合2种以上来作为电介质层10的高分子材料使用。
电介质层10根据情况可以为发泡体。该情况下，电介质层10的相对介电常数容易变低。此外，可以使电介质层10轻量化。发泡体例如为烯烃系发泡体或聚酯系发泡体。
电介质层10的厚度例如为50～2000μm，理想的是100～1000μm。由此，容易兼顾高尺寸精度和低成本。
导电层30在电磁波吸收体1中在电磁波吸收体的背面附近反射作为吸收对象的电磁波。导电层30的薄层电阻例如具有0.001～30Ω/□的薄层电阻。由此，电磁波吸收体1容易发挥期望的电磁波吸收特性。例如，能够有效地使毫米波雷达中使用的50～100GHz、特别是60～90GHz的频率的电磁波衰减。
导电层30的材料例如为(i)铝、铜、镍、铬、及钼等金属、(ii)这些金属的合金、或(iii)ITO。导电层30的材料为ITO的情况下，可以使用锡氧化物的含量为5～15重量％的ITO。
如图1所示，导电层30可以层叠于高分子薄膜35。高分子薄膜35作为支撑导电层30的支撑体发挥功能。该情况下，高分子薄膜35的材料可以是作为高分子薄膜25的材料而例示出的材料，也可以为聚酯、聚丙烯、聚氨酯、氨基甲酸酯丙烯酸类树脂、双轴拉伸聚丙烯(BOPP)、或偏氯乙烯树脂。高分子薄膜35根据情况可以省略。
可以对电阻层20及导电层30中的任意层的朝向电介质层10的主面实施规定的涂布。由此，能够防止电介质层10中包含的成分扩散到电阻层20或导电层30而对电阻层20或导电层30的特性产生影响。这样的涂布的材料例如为SiO2等硅氧化物、硅氮化物、Al2O3等铝氧化物、氮化铝(AlN)、Nb2O5等铌氧化物、钛酸锶(STO)、或氧化铝锌(AZO)。其中，若涂布的材料为AlN或AZO，则能够有利地提高电阻层20或导电层30的耐久性。
如图1所示，电磁波吸收体1例如进而具备粘合层40和隔离体50。粘合层40配置于导电层30的外侧。隔离体50与粘合层40接触而配置。通过将隔离体50剥离而使粘合层40露出，并将粘合层40按压于成形品等物品，能够容易地将电磁波吸收体1安装于物品。另外，在将电磁波吸收体1安装于物品之前可以由隔离体50保护粘合层40。
粘合层40例如包含丙烯酸系粘合剂、橡胶系粘合剂、有机硅系粘合剂、及氨基甲酸酯系粘合剂等粘合剂。
如图2所示，能够使用电磁波吸收体1，制造例如带有电磁波吸收体的成形品100。带有电磁波吸收体的成形品100具备成形品70和安装于成形品70的电磁波吸收体1。成形品70例如为保险杠等汽车部件。
对电磁波吸收体1的制造方法的一例进行说明。通过溅射等成膜方法在高分子薄膜25上形成电阻层20。另外，准备在高分子薄膜35上形成有导电层30的层叠体。
接着，将形成以规定的厚度成形的电介质层10的树脂组合物载置于导电层30。其后，将电阻层20的一个主面重叠在形成电介质层10的树脂组合物上。根据需要，使树脂组合物固化。由此，能够制造电磁波吸收体1。根据该方法，由于容易控制电介质层10的厚度，因此可以以能够有效地吸收作为吸收对象的波长的电磁波的方式制造电磁波吸收体1。另外，由于分开地形成电阻层20及导电层30，因此电磁波吸收体1的制造所需的时间短，电磁波吸收体1的制造成本低。需要说明的是，为了将电介质层10与导电层30或电阻层20粘在一起，可以使用粘接剂或粘合剂。
实施例
以下，通过实施例更详细地对本发明进行说明。需要说明的是，本发明不限定于以下的实施例。首先，对各实施例及各比较例的电阻层的特性的测定方法及样品的评价方法进行说明。
[X射线衍射]
在各实施例及各比较例中，使用X射线衍射装置(Rigaku Corporation制、制品名：RINT2200)，通过X射线反射率法测定电阻层的厚度。另外，使用X射线衍射装置，得到对电阻层的X射线衍射图案。作为X射线，使用CuKα射线。根据得到的X射线衍射图案来确认电阻层是多晶结构还是非晶质结构。将结果示于表1。
[薄层电阻]
使用非接触式电阻测定装置(NAPSON CORPORATION制、制品名：NC-80MAP)，依据日本工业标准(JIS)Z 2316，通过涡电流测定法对各实施例及各比较例的未进行化学药品浸渍处理的电阻层的薄层电阻进行测定。将结果示于表1。另外，对进行了化学药品浸渍处理的电阻层也同样地测定薄层电阻。
[电阻率]
在各实施例及各比较例中，根据如上所述地测定的电阻层的厚度和如上所述地测定的未进行化学药品浸渍处理的电阻层的薄层电阻求出两者的积，由此确定电阻率。将结果示于表1。
[相对介电常数]
使用网络分析仪(Agilent Technologies公司制、制品名：N5230C)及空腔谐振器(关东电子应用开发株式会社制空腔谐振器CP531)，通过空腔谐振器摄动法对实施例1的电介质层在10GHz下的相对介电常数进行测定。
[电磁波吸收特性]
依据JIS R 1679：2007，对各实施例及各比较例的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)的表面，测定使76GHz的毫米波垂直入射的情况下的反射衰减量(反射量的绝对值)。将结果示于表1。另外，按照下述的指标，对各实施例及各比较例进行综合评价。将结果示于表1。
a：样品A及样品B这两者中反射衰减量为20dB以上。
b：样品A及样品B中的任一者或样品A及样品B这两者中反射衰减量为10dB以上且不足20dB。
x：样品A及样品B中的任一者或样品A及样品B这两者中反射衰减量不足10dB。
<实施例1>
在具有38μm的厚度的PET薄膜(Mitsubishi Chemical Corporation制、Diafoil)上，使用包含In2O3的靶材，通过DC磁控溅射法形成由非晶质的In2O3形成的膜，将该膜在大气中在150℃的温度下进行3小时加热处理使In2O3结晶化。这样，形成实施例1的电阻层。将实施例1的电阻层的厚度、薄层电阻、及电阻率示于表1。将具有2.6的相对介电常数的丙烯酸类树脂以560μm的厚度挤出成形，制作实施例1的电介质层。另外，作为实施例1的导电层，准备具有0.002Ω/□的薄层电阻的铝箔。在实施例1的电介质层的一个主面以未进行化学药品浸渍处理的实施例1的电阻层与其接触的方式贴附实施例1的电阻层。另外，使实施例1的导电层接触并贴附于实施例1的电介质层的另一主面。这样，制作实施例1的样品A。
使实施例1的形成有电阻层的PET薄膜在5重量％的NaOH水溶液中浸渍5分钟来进行化学药品浸渍处理，其后使其风干，从而制作进行了化学药品浸渍处理的电阻层。化学药品浸渍处理中的NaOH水溶液的温度调节至40℃。代替未进行化学药品浸渍处理的实施例1的电阻层，使用进行了化学药品浸渍处理的电阻层，除此以外，与样品A同样地操作，制作实施例1的样品B。
<实施例2及3>
以电阻层的厚度及电阻层的薄层电阻成为表1所示的值的方式变更溅射的条件，除此以外，与实施例1同样地操作，形成由In2O3形成的实施例2及3的电阻层。在实施例2及3的电阻层的形成中，将通过溅射得到的由非晶质的In2O3形成的膜在与实施例1同样的条件下进行加热处理而使其结晶化。代替实施例1的电阻层，使用实施例2或3的电阻层，除此以外，与实施例1同样地操作，制作实施例2及3的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)。
<实施例4>
使用ITO作为靶材，以电阻层的厚度及电阻层的薄层电阻成为表1所示的值的方式变更溅射的条件，除此以外，与实施例1同样地操作，形成由包含2.5重量％的锡氧化物的ITO形成的实施例4的电阻层。在实施例4的电阻层的形成中，将通过溅射得到的非晶质的ITO的膜在与实施例1同样的条件下进行加热处理而使其结晶化。代替实施例1的电阻层，使用实施例4的电阻层，除此以外，与实施例1同样地操作，制作实施例4的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)。
<实施例5>
使用ITO作为靶材，以电阻层的厚度及电阻层的薄层电阻成为表1所示的值的方式变更溅射的条件，除此以外，与实施例1同样地操作，形成由包含3.3重量％的锡氧化物的ITO形成的实施例5的电阻层。在实施例5的电阻层的形成中，将通过溅射得到的非晶质的ITO的膜在与实施例1同样的条件下进行加热处理而使其结晶化。代替实施例1的电阻层，使用实施例5的电阻层，除此以外，与实施例1同样地操作，制作实施例5的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)。
<实施例6>
使用包含In2O3、SnO2、及SiO2的靶材，以电阻层的厚度及电阻层的薄层电阻成为表1所示的值的方式变更溅射的条件，除此以外，与实施例1同样地操作，形成由除了包含In2O3以外、还包含7.5重量％的SnO2及2.5重量％的SiO2的材料形成的实施例6的电阻层。在实施例6的电阻层的形成中，对通过溅射得到的非晶质的膜在与实施例1同样的条件下进行加热处理而使其结晶化。代替实施例1的电阻层，使用实施例6的电阻层，除此以外，与实施例1同样地操作，制作实施例6的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)。
<实施例7>
使用包含In2O3、SnO2、及MgO的靶材，以电阻层的厚度及电阻层的薄层电阻成为表1所示的值的方式变更溅射的条件，除此以外，与实施例1同样地操作，形成由除了包含In2O3以外、还包含7.5重量％的SnO2及2.5重量％的MgO的材料形成的实施例7的电阻层。在实施例7的电阻层的形成中，对通过溅射得到的非晶质的膜在与实施例1同样的条件下进行加热处理而使其结晶化。代替实施例1的电阻层，使用实施例7的电阻层，除此以外，与实施例1同样地操作，制作实施例7的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)。
<实施例8>
使用包含In2O3、SnO2、及TiO2的靶材，以电阻层的厚度及电阻层的薄层电阻成为表1所示的值的方式变更溅射的条件，除此以外，与实施例1同样地操作，形成由除了包含In2O3以外、还包含7.5重量％的SnO2及2.5重量％的TiO2的材料形成的实施例8的电阻层。在实施例8的电阻层的形成中，对通过溅射得到的非晶质的膜在与实施例1同样的条件下进行加热处理而使其结晶化。代替实施例1的电阻层，使用实施例8的电阻层，除此以外，与实施例1同样地操作，制作实施例8的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)。
<实施例9>
使用包含In2O3及SnO2的靶材及包含氮气的反应气体，以电阻层的厚度及电阻层的薄层电阻成为表1所示的值的方式变更溅射的条件，除此以外，与实施例1同样地操作，形成由除了包含In2O3以外、还包含7.5重量％的SnO2及3原子％的氮的材料形成的实施例9的电阻层。在实施例9的电阻层的形成中，对通过溅射得到的非晶质的膜在与实施例1同样的条件下进行加热处理而使其结晶化。代替实施例1的电阻层，使用实施例9的电阻层，除此以外，与实施例1同样地操作，制作实施例9的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)。
<实施例10>
使用包含In2O3、SnO2、及SiO2的靶材，以电阻层的厚度及电阻层的薄层电阻成为表1所示的值的方式变更溅射的条件，除此以外，与实施例1同样地操作，形成由除了包含In2O3以外、还包含10重量％的SnO2及5重量％的SiO2的材料形成的实施例10的电阻层。在实施例10的电阻层的形成中，对通过溅射得到的非晶质的膜在与实施例1同样的条件下进行加热处理而使其结晶化。代替实施例1的电阻层，使用实施例10的电阻层，除此以外，与实施例1同样地操作，制作实施例10的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)。
<实施例11>
在具有38μm的厚度的PET薄膜(Mitsubishi Chemical Corporation制、Diafoil)上，通过DC磁控溅射法形成由包含10重量％的锡氧化物的非晶质的ITO形成的膜，将该膜在大气中在150℃的温度下进行3小时加热处理使其结晶化。这样，形成实施例11的导电层。实施例11的导电层的厚度为120nm。实施例11的导电层的薄层电阻为20Ω/□。代替实施例1的导电层，使用实施例11的导电层，除此以外，与实施例1同样地操作，制作实施例11的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)。
<比较例1>
在具有38μm的厚度的PET薄膜(Mitsubishi Chemical Corporation制、Diafoil)上，使用包含ZnO及Ga2O3的靶材，通过DC磁控溅射法，以电阻层的厚度及电阻层的薄层电阻成为表1所示的值的方式调节溅射的条件，形成由以ZnO为主成分、并且包含3重量％的Ga2O3的多晶结构的材料形成的比较例1的电阻层。需要说明的是，在比较例1的电阻层的形成中，在溅射后不进行加热处理。代替实施例1的电阻层，使用比较例1的电阻层，除此以外，与实施例1同样地操作，制作比较例1的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)。
<比较例2>
在具有38μm的厚度的PET薄膜(Mitsubishi Chemical Corporation制、Diafoil)上，使用ITO作为靶材，通过DC磁控溅射法，以电阻层的厚度及电阻层的薄层电阻成为表1所示的值的方式调节溅射的条件，形成由包含10重量％的锡氧化物的非晶质的ITO形成的比较例2的电阻层。代替实施例1的电阻层，使用比较例2的电阻层，除此以外，与实施例1同样地操作，制作比较例2的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)。
<比较例3>
使用ITO作为靶材，以电阻层的厚度及电阻层的薄层电阻成为表1所示的值的方式变更溅射的条件，除此以外，与比较例2同样地操作，形成由包含7.5重量％的锡氧化物的非晶质的ITO形成的比较例3的电阻层。代替实施例1的电阻层，使用比较例3的电阻层，除此以外，与实施例1同样地操作，制作比较例3的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)。
<比较例4>
使用ITO作为靶材，以电阻层的厚度及电阻层的薄层电阻成为表1所示的值的方式变更溅射的条件，除此以外，与实施例1同样地操作，形成由包含2.5重量％的锡氧化物的ITO形成的比较例4的电阻层。在比较例4的电阻层的形成中，将通过溅射得到的非晶质的ITO的膜在与实施例1同样的条件下进行加热处理而使其结晶化。代替实施例1的电阻层，使用比较例4的电阻层，除此以外，与实施例1同样地操作，制作比较例4的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)。
<比较例5>
使用ITO作为靶材，以电阻层的厚度及电阻层的薄层电阻成为表1所示的值的方式变更溅射的条件，除此以外，与实施例1同样地操作，形成由包含2.5重量％的锡氧化物的ITO形成的比较例5的电阻层。在比较例5的电阻层的形成中，将通过溅射得到的非晶质的ITO的膜在与实施例1同样的条件下进行加热处理而使其结晶化。代替实施例1的电阻层，使用比较例5的电阻层，除此以外，与实施例1同样地操作，制作比较例5的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)。
<比较例6>
使用ITO作为靶材，以电阻层的厚度及电阻层的薄层电阻成为表1所示的值的方式变更溅射的条件，除此以外，与实施例1同样地操作，形成由包含7.5重量％的锡氧化物的ITO形成的比较例6的电阻层。在比较例6的电阻层的形成中，将通过溅射得到的非晶质的ITO的膜在与实施例1同样的条件下进行加热处理而使其结晶化。代替实施例1的电阻层，使用比较例6的电阻层，除此以外，与实施例1同样地操作，制作比较例6的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)。
<比较例7>
使用包含ZnO及Al2O3的靶材，以电阻层的厚度及电阻层的薄层电阻成为表1所示的值的方式变更溅射的条件，除此以外，与比较例1同样地操作，形成由以ZnO为主成分、并且包含3重量％的Al2O3的多晶结构的材料形成的比较例7的电阻层。需要说明的是，在比较例7的电阻层的形成中，在溅射后不进行加热处理。代替实施例1的电阻层，使用比较例7的电阻层，除此以外，与实施例1同样地操作，制作比较例7的样品A(没有化学药品浸渍处理)及样品B(有化学药品浸渍处理)。
如表1所示，可表明：电阻层具有包含铟氧化物作为主成分的多晶结构、并且具有260～500Ω/□的薄层电阻及5×10-4Ω·cm以上的电阻率时，能够发挥良好的耐化学药品性。
[表1]
Claims (10)
1.一种电磁波吸收体，其具备：
电介质层；
电阻层，其配置于所述电介质层的一个主面、包含铟氧化物作为主成分并且具有多晶结构；和
导电层，其配置于所述电介质层的另一主面、具有比所述电阻层的薄层电阻低的薄层电阻，
所述电阻层具有260～500Ω/□的薄层电阻及5×10-4Ω·cm以上的电阻率，
所述电阻层形成于高分子薄膜上、或者与所述电介质层接触。
2.根据权利要求1所述的电磁波吸收体，其中，所述电阻层具有5×10-3Ω·cm以下的电阻率。
3.根据权利要求1或2所述的电磁波吸收体，其中，所述电阻层具有15～200nm的厚度。
4.根据权利要求1或2所述的电磁波吸收体，其中，所述电阻层包含锡氧化物，
所述电阻层中的所述锡氧化物的含量不足5重量％。
5.根据权利要求1或2所述的电磁波吸收体，其中，所述电阻层包含锡氧化物及杂质元素，
所述电阻层中的所述锡氧化物的含量为5重量％以上、并且不足13重量％，
所述电阻层中的杂质元素的含量以重量％基准计比所述锡氧化物的含量少。
6.根据权利要求5所述的电磁波吸收体，其中，所述杂质元素包含硅、镁、钛、及氮中的至少1者。
7.根据权利要求1或2所述的电磁波吸收体，其中，所述电介质层具有1～10的相对介电常数。
8.根据权利要求1或2所述的电磁波吸收体，其中，所述导电层具有0.001～30Ω/□的薄层电阻。
9.根据权利要求1或2所述的电磁波吸收体，其还具备：
配置于所述导电层的外侧的粘合层、和
与所述粘合层接触而配置的隔离体。
10.一种带有电磁波吸收体的成形品，其具备：
成形品、和
安装于所述成形品的权利要求1～9中任一项所述的电磁波吸收体。
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| JP2017116299A JP7058475B2 (ja) | 2017-06-13 | 2017-06-13 | 電磁波吸収体及び電磁波吸収体付成形品 |
| JP2017-116299 | 2017-06-13 | ||
| PCT/JP2018/012604 WO2018230094A1 (ja) | 2017-06-13 | 2018-03-27 | 電磁波吸収体及び電磁波吸収体付成形品 |
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| EP (1) | EP3641518A4 (zh) |
| JP (1) | JP7058475B2 (zh) |
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| EP3860326A4 (en) * | 2018-09-25 | 2022-09-14 | Sekisui Chemical Co., Ltd. | ?/4 TYPE RADIO WAVE ABSORBER |
| WO2020246608A1 (ja) * | 2019-06-07 | 2020-12-10 | 日東電工株式会社 | 電波吸収部材、電波吸収構造、及び検査装置 |
| JP2021044483A (ja) * | 2019-09-13 | 2021-03-18 | 日東電工株式会社 | インピーダンス整合膜及び電波吸収体 |
| JP2021163794A (ja) * | 2020-03-30 | 2021-10-11 | 日東電工株式会社 | 電波吸収体 |
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| JP2003198179A (ja) | 2001-12-26 | 2003-07-11 | Nitto Denko Corp | 電磁波吸収体 |
| JP4083044B2 (ja) * | 2003-03-18 | 2008-04-30 | 橋本 修 | 電波吸収機能を備えた道路付帯設備の構造 |
| JP2005012031A (ja) | 2003-06-19 | 2005-01-13 | Tdk Corp | 電波吸収体 |
| JP2009071278A (ja) * | 2007-08-17 | 2009-04-02 | Asahi Glass Co Ltd | 電波吸収体 |
| JP5812417B2 (ja) | 2011-12-28 | 2015-11-11 | 大日本印刷株式会社 | アニール方法、膜製造方法、アニール装置および膜製造装置 |
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2018
- 2018-03-27 EP EP18818295.0A patent/EP3641518A4/en not_active Withdrawn
- 2018-03-27 WO PCT/JP2018/012604 patent/WO2018230094A1/ja unknown
- 2018-03-27 KR KR1020197035335A patent/KR20200018425A/ko not_active Application Discontinuation
- 2018-03-27 CN CN201880039281.8A patent/CN110771273B/zh not_active Expired - Fee Related
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| JPH04206403A (ja) * | 1990-11-30 | 1992-07-28 | Nitto Denko Corp | アナログ式タツチパネル |
| JPH05114813A (ja) * | 1991-10-22 | 1993-05-07 | Tdk Corp | 電波吸収体 |
| JPH08307088A (ja) * | 1995-04-27 | 1996-11-22 | C I Kasei Co Ltd | 電波吸収体 |
| WO2004065656A1 (ja) * | 2003-01-24 | 2004-08-05 | Bridgestone Corporation | Ｉｔｏ薄膜、その成膜方法、透明導電性フィルム及びタッチパネル |
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| JP2019004006A (ja) | 2019-01-10 |
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| KR20200018425A (ko) | 2020-02-19 |
| EP3641518A1 (en) | 2020-04-22 |
| EP3641518A4 (en) | 2021-03-03 |
| CN110771273A (zh) | 2020-02-07 |
| JP7058475B2 (ja) | 2022-04-22 |
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