CN112735942B - 一种igbt用硅衬底抛光片的制备方法 - Google Patents

一种igbt用硅衬底抛光片的制备方法 Download PDF

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CN112735942B
CN112735942B CN202011642678.1A CN202011642678A CN112735942B CN 112735942 B CN112735942 B CN 112735942B CN 202011642678 A CN202011642678 A CN 202011642678A CN 112735942 B CN112735942 B CN 112735942B
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igbt
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钟耕杭
张健华
程凤伶
徐继平
宁永铎
边永智
颜俊尧
李钧宏
连庆伟
崔彬
李英涛
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Shandong Youyan Semiconductor Materials Co ltd
Youyan Semiconductor Silicon Materials Co ltd
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Abstract

本发明公开了一种IGBT用硅衬底抛光片的制备方法，包括：硅单晶生长→晶体检测→滚磨→多线切割→倒角→双面研磨→化学腐蚀→POLY薄膜生长→中间检测→化学机械抛光→清洗→出厂检验，在拉晶过程中采用水平磁场，磁场强度为1000‑5000高斯，磁场形状为马鞍形，晶转为5‑15rpm，埚转为0.1‑3rpm，晶体生长时控制液面位置波动范围为±0.5mm；在倒角工序中，分别使用1000#倒角轮倒角2次，3000#倒角轮倒角2次，最终倒角幅长控制在500‑700μm；在POLY薄膜生长工序中，载具转速为0.5‑3rpm，LPCVD的工艺温度区间为600‑630℃，LPCVD的气体流量区间为50‑200mL/min。采用本发明能够获得晶体微缺陷极少、几何参数高度精密的IGBT用8英寸硅衬底抛光片。

Description

一种IGBT用硅衬底抛光片的制备方法
技术领域
本发明涉及一种IGBT用硅衬底抛光片的制备方法，属于半导体集成电路制造技术领域。
背景技术
IGBT(Insulated Gate Bipolar Transistor)，绝缘栅双极型晶体管，是由BJT(双极型三极管)和MOS(绝缘栅型场效应管)组成的复合全控型电压驱动式功率半导体器件，兼有MOSFET的高输入阻抗和GTR的低导通压降两方面的优点。适合应用于直流电压为600V及以上的变流系统，如交流电机、变频器、开关电源、照明电路、牵引传动等领域。IGBT是能源转换与传输的核心器件，是电力电子装置的“CPU”。采用IGBT进行功率变换，能够提高用电效率和质量，具有高效节能和绿色环保的特点，是解决能源短缺问题和降低碳排放的重要支撑技术。IGBT器件广泛应用在新能源汽车、白家电、智能电网、轨道交通等领域。
IGBT的制造环节包含硅衬底制造，生长外延，集成电路制造，封装测试等环节。IGBT用硅衬底抛光片外延层的厚度较大，基于硅材料本身的性质以及IGBT器件在外延生长过程的特殊性，在厚外延生长过程中，硅抛光片的相关技术指标需要做特别的设计和调整，单晶的氧含量及均匀性需要精确控制，硅片的边缘轮廓需要精确控制，酸腐蚀工艺要能改善硅片的背面和边缘粗糙度同时不破坏硅片的平整度，POLY薄膜(多晶硅薄膜)工艺既要满足吸杂能力同时要保证有较低的应力，而且还要保证薄膜的纯度和硅片背面的洁净度，而目前我国在制造IGBT用硅衬底过程中从单晶生长到硅衬底抛光片制备仍存在技术壁垒，所生产的抛光片仍无法满足IGBT器件的特殊要求。
未来3-5年，伴随物联网、5G通讯、工业自动化等领域的发展，8英寸IGBT用硅衬底抛光片的需求量会快速增加，市场前景光明。并且随着对IGBT器件性能要求的不断提高，对IGBT用硅衬底抛光片的品质要求也愈加严苛。因此，对硅抛光片的全生产流程工艺进行优化，制备出符合IGBT器件特殊要求的硅抛光片迫在眉睫。
发明内容
针对现有技术存在的问题，本发明的目的在于提供一种IGBT用硅衬底抛光片的制备方法。
为实现上述目的，本发明采用以下技术方案：
一种IGBT用硅衬底抛光片的制备方法，该制备方法包括的工序依次为：硅单晶生长→晶体检测→滚磨→多线切割→倒角→双面研磨→化学腐蚀→POLY薄膜生长→中间检测→化学机械抛光→清洗→出厂检验，其中，
在所述硅单晶生长工序中，在拉晶过程中采用水平磁场，磁场强度为1000-5000高斯，磁场形状为马鞍形，晶转为5-15rpm，埚转为0.1-3rpm，并且晶体生长时控制液面位置波动范围为±0.5mm；
在所述倒角工序中，进行四次倒角加工，先使用1000#倒角轮倒角2次，R值(倒圆半径)控制在0.21-0.23mm；再使用3000#倒角轮倒角2次，R值控制在0.17-0.19mm；
在所述POLY薄膜生长工序中，LPCVD的工艺温度区间为600-630℃，实际沉积区域温度梯度小于等于0.5％，LPCVD的气体流量区间为50-200mL/min，实际沉积区域气体浓度梯度小于等于5％。
优选地，在所述倒角工序中，参考面加工速度为1-3mm/s，最终倒角幅长控制在500-700μm。
优选地，在POLY薄膜生长过程中，载具旋转，载具的转速优选为0.5-3rpm；沉积的POLY薄膜厚度为6000-10000埃，洁净区宽度大于50μm，抛光片WARP(翘曲度)小于20μm。
本发明的优点在于：
1、本发明突破了国内制备IGBT用硅衬底抛光片的技术壁垒，解决了晶体微缺陷控制、硅片几何参数精密控制的技术难题。通过此制备方法，研制出了晶体微缺陷极少、几何参数高度精密的IGBT用8英寸硅衬底抛光片。
2、本发明所使用的磁场拉晶技术，能精确控制单晶的氧含量分布和电阻率分布，同时能有效抑制COP等微缺陷的产生。
3、本发明所使用的边缘加工技术，能完美的匹配IGBT使用的厚外延工艺。
4、本发明所使用的背封POLY薄膜技术，在保证吸杂效果的同时，大大降低了薄膜应力和膜内金属杂质含量。
附图说明
图1为本发明制备IGBT用硅衬底抛光片的工艺流程图。
具体实施方式
下面结合附图及实施例对本发明做进一步说明，但并不意味着对本发明保护范围的限制。
如图1所示，本发明的IGBT用硅衬底抛光片的制备方法依次包括以下工序：硅单晶生长→晶体检测→滚磨→多线切割→倒角→双面研磨→化学腐蚀→poly薄膜生长→中间检测→化学机械抛光→清洗→出厂检验。其中本发明做出改进的主要技术要点为通过磁场拉晶技术来精确控制单晶的氧含量和缺陷；通过精确的边缘轮廓设计和加工工艺匹配IGBT使用的厚外延工艺；以及独特的LPCVD(Low Pressure Chemical Vapor Deposition，低压力化学气相沉积法)生长POLY薄膜工艺，在保证吸杂效果的同时，降低薄膜应力和膜内金属杂质含量。
IGBT硅衬底用直拉单晶对电阻率、晶体原生缺陷(COP(晶体原生坑)和旋涡)以及氧含量分布有很高的要求。磁场对熔体对流本身有着显著的迟滞效应，具有使硅熔体温度梯度分布均匀、熔体内部对流稳定且晶体生长速率稳定的优势。如图1中S1步骤，本发明所提供的IGBT用硅衬底抛光片制备方法中采用磁场控制和液位控制拉晶技术，其中磁场类型为水平磁场，磁场强度为1000-5000高斯，磁场形状为马鞍形，晶转为5-15rpm，埚转为0.1-3rpm；液位控制系统能够保证晶体生长时液面位置±0.5mm波动范围。通过此拉晶工艺，能精确的控制氧含量分布，在抑制漩涡缺陷的同时可以有效降低COP成核能力及数量，将单晶的缺陷控制在极低的水平。
由于IGBT器件制造多使用厚外延工艺，需要设计特殊的边缘轮廓来匹配厚外延工艺，为实现完美匹配厚外延工艺的边缘轮廓设计，如图1中S3步骤。特别的，本发明使用特殊的倒角工艺和流程，即共需要进行四次倒角加工，分别使用1000#倒角轮加工2次，R值控制在0.21-0.23mm，3000#倒角轮加工2次，R值控制在0.17-0.19mm，参考面加工速度控制在1-3mm/s，倒角幅长控制在500-700μm。
对于IGBT用硅衬底，背封POLY薄膜需要承担吸杂和背封的作用，同时要保证背封POLY薄膜具有较低的应力和较高的纯度。如图1中S5步骤，本发明所提供的IGBT用硅衬底抛光片制备方法中采用特殊的背封POLY薄膜工艺，LPCVD的工艺温度区间为600-630℃，实际沉积区域温度梯度小于等于0.5％，LPCVD的气体流量区间为50-200mL/min，实际沉积区域气体浓度梯度小于等于5％，POLY薄膜生长过程衬底载具需要旋转，载具转速为0.5-3rpm，沉积的POLY薄膜厚度为6000-10000埃，洁净区宽度大于20μm，抛光片WARP(翘曲度)小于20μm。通过此背封POLY薄膜工艺，可以在保证POLY薄膜对硅衬底具有优异的吸杂效果的同时，大大降低POLY薄膜的应力，同时可以避免硅衬底表面多晶损伤的产生。
实施例1
通过使用本发明中的磁场拉晶方法拉制8英寸N型轻掺P单晶，其中，磁场强度为3000高斯，晶转为10rpm，埚转为1.5rpm，液位控制系统保证晶体生长时液面±0.5mm波动范围；采用本发明中的倒角加工方法进行边缘轮廓设计加工，进行四次倒角加工，分别使用1000#倒角轮倒角2次，R值为0.22mm，3000#倒角轮倒角2次，R值为0.19mm，参考面加工速度为1.5mm/s，倒角幅长控制在550±50μm；LPCVD过程载具转速为1rpm，LPCVD生长温度设置为615℃，实际沉积区域温度梯度控制在0.5％以内，LPCVD的气体流量设置为150mL/min，实际沉积区域气体浓度梯度控制在5％以内，最终加工成IGBT用硅衬底抛光片，该产品具备以下规格参数：
氧含量控制在8-14ppma(ASTM-83标准)
径向电阻率变化≤10％；
氧化层错≤100个/cm2；
平整度≤4μm；
局部平整度(25*25，背参考面)≤1μm；
翘曲度≤20μm(3PT，三点支撑法)；
颗粒(含COP)≤40个/片(≤0.16μm)；
表面金属沾污≤5E10atoms/cm2(Al、Cr、Fe、Ni、Zn)；
表面金属沾污≤1E10atoms/cm2(Cu)。
将所得硅衬底抛光片用于IGBT厚外延工艺，外延层厚度超过30μm，匹配性良好，器件良率达到97％，具备了国产替代效果。
实施例2
通过使用本发明中的磁场拉晶方法拉制8英寸N型轻掺P单晶，其中，磁场强度为4000高斯，晶转为15rpm，埚转为2rpm，液位控制系统保证晶体生长时液面+/-0.5mm波动范围；采用本发明中的倒角加工方法进行边缘轮廓设计加工，进行四次倒角加工，分别使用1000#倒角轮倒角2次，R值为0.21mm，3000#倒角轮倒角2次，R值为0.18mm，参考面加工速度为2.5mm/s，倒角幅长控制为650±50μm；LPCVD过程载具转速为2rpm，LPCVD生长温度设置为630℃，实际沉积区域温度梯度控制在0.5％以内，LPCVD的气体流量设置为200mL/min，实际沉积区域气体浓度梯度控制在5％以内，最终加工成IGBT用硅衬底抛光片，该产品具备以下规格参数：
氧含量控制在9-15ppma(ASTM-83标准)
径向电阻率变化≤10％；
氧化层错≤100个/cm2；
平整度≤4μm；
局部平整度(25*25，背参考面)≤1μm；
翘曲度≤20μm(3PT)；
颗粒(含COP)≤40个/片(≤0.16μm)；
表面金属沾污≤5E10 atoms/cm2(Al、Cr、Fe、Ni、Zn)；
表面金属沾污≤1E10 atoms/cm2(Cu)。
将所得硅衬底抛光片用于IGBT厚外延工艺，外延层厚度超过30μm，匹配性良好，器件良率达到97％，具备了国产替代效果。

Claims (3)

1.一种IGBT用硅衬底抛光片的制备方法，该制备方法包括的工序依次为：硅单晶生长→晶体检测→滚磨→多线切割→倒角→双面研磨→化学腐蚀→POLY薄膜生长→中间检测→化学机械抛光→清洗→出厂检验，其特征在于，
在所述硅单晶生长工序中，在拉晶过程中采用水平磁场，磁场强度为1000-5000高斯，磁场形状为马鞍形，晶转为5-15rpm，埚转为0.1-3rpm，并且晶体生长时控制液面位置波动范围为±0.5mm；
在所述倒角工序中，进行四次倒角加工，先使用1000#倒角轮倒角2次，R值控制在0.21-0.23mm；再使用3000#倒角轮倒角2次，R值控制在0.17-0.19mm；
在所述POLY薄膜生长工序中，LPCVD的工艺温度区间为600-630℃，实际沉积区域温度梯度小于等于0.5％，LPCVD的气体流量区间为50-200mL/min，实际沉积区域气体浓度梯度小于等于5％；在POLY薄膜生长过程中，载具旋转，载具的转速为0.5-3rpm，沉积的POLY薄膜厚度为6000-10000埃。
2.根据权利要求1所述的IGBT用硅衬底抛光片的制备方法，其特征在于，在所述倒角工序中，参考面加工速度为1-3mm/s，最终倒角幅长控制在500-700μm。
3.根据权利要求1所述的IGBT用硅衬底抛光片的制备方法，其特征在于，在POLY薄膜生长过程中，洁净区宽度大于20μm，抛光片WARP小于20μm。
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