CN112563142B - 一种提高uis能力的超结mosfet制造方法 - Google Patents
一种提高uis能力的超结mosfet制造方法 Download PDFInfo
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- CN112563142B CN112563142B CN202110190645.6A CN202110190645A CN112563142B CN 112563142 B CN112563142 B CN 112563142B CN 202110190645 A CN202110190645 A CN 202110190645A CN 112563142 B CN112563142 B CN 112563142B
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- 238000002955 isolation Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 21
- 210000000746 body region Anatomy 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000002513 implantation Methods 0.000 claims description 32
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202110190645.6A CN112563142B (zh) | 2021-02-20 | 2021-02-20 | 一种提高uis能力的超结mosfet制造方法 |
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CN202110190645.6A CN112563142B (zh) | 2021-02-20 | 2021-02-20 | 一种提高uis能力的超结mosfet制造方法 |
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CN112563142A CN112563142A (zh) | 2021-03-26 |
CN112563142B true CN112563142B (zh) | 2021-06-04 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103996700A (zh) * | 2013-02-18 | 2014-08-20 | 英飞凌科技奥地利有限公司 | 包括注入区的超级结半导体器件 |
US20150179765A1 (en) * | 2010-11-01 | 2015-06-25 | Sumitomo Electric Industries, Ltd. | Semiconductor device and fabrication method thereof |
CN105280711A (zh) * | 2014-06-27 | 2016-01-27 | 英飞凌科技奥地利有限公司 | 电荷补偿结构及用于其的制造 |
CN111211172A (zh) * | 2020-01-03 | 2020-05-29 | 苏州锴威特半导体股份有限公司 | 一种短沟道碳化硅mosfet器件及其制造方法 |
-
2021
- 2021-02-20 CN CN202110190645.6A patent/CN112563142B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150179765A1 (en) * | 2010-11-01 | 2015-06-25 | Sumitomo Electric Industries, Ltd. | Semiconductor device and fabrication method thereof |
CN103996700A (zh) * | 2013-02-18 | 2014-08-20 | 英飞凌科技奥地利有限公司 | 包括注入区的超级结半导体器件 |
CN105280711A (zh) * | 2014-06-27 | 2016-01-27 | 英飞凌科技奥地利有限公司 | 电荷补偿结构及用于其的制造 |
CN111211172A (zh) * | 2020-01-03 | 2020-05-29 | 苏州锴威特半导体股份有限公司 | 一种短沟道碳化硅mosfet器件及其制造方法 |
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Address after: 312000 No. 518, Linjiang Road, Gaobu street, Yuecheng District, Shaoxing City, Zhejiang Province Patentee after: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. Address before: 312000 No. 518, Linjiang Road, Gaobu street, Yuecheng District, Shaoxing City, Zhejiang Province Patentee before: SMIC manufacturing (Shaoxing) Co.,Ltd. |
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Effective date of registration: 20220705 Address after: No. 518, Linjiang Road, Gaobu Town, Yuecheng District, Shaoxing City, Zhejiang Province Patentee after: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. Patentee after: SMIC international integrated circuit manufacturing (Shanghai) Co., Ltd Address before: 312000 No. 518, Linjiang Road, Gaobu street, Yuecheng District, Shaoxing City, Zhejiang Province Patentee before: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. |
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