CN112536700B - 切割方法以及切割装置 - Google Patents

切割方法以及切割装置 Download PDF

Info

Publication number
CN112536700B
CN112536700B CN202011396997.9A CN202011396997A CN112536700B CN 112536700 B CN112536700 B CN 112536700B CN 202011396997 A CN202011396997 A CN 202011396997A CN 112536700 B CN112536700 B CN 112536700B
Authority
CN
China
Prior art keywords
cutting
blade
mark
cut
workpiece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011396997.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN112536700A (zh
Inventor
福家朋来
清水翼
西山真生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Seimitsu Co Ltd
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Publication of CN112536700A publication Critical patent/CN112536700A/zh
Application granted granted Critical
Publication of CN112536700B publication Critical patent/CN112536700B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00Other grinding machines or devices
    • B24B27/06Grinders for cutting-off
    • B24B27/0683Accessories therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00Other grinding machines or devices
    • B24B27/06Grinders for cutting-off
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B51/00Arrangements for automatic control of a series of individual steps in grinding a workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dicing (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN202011396997.9A 2018-02-08 2018-11-09 切割方法以及切割装置 Active CN112536700B (zh)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2018-021222 2018-02-08
JP2018021222 2018-02-08
JP2018-163613 2018-08-31
JP2018163614 2018-08-31
JP2018163615 2018-08-31
JP2018163613 2018-08-31
JP2018-163615 2018-08-31
JP2018-163614 2018-08-31
PCT/JP2018/041727 WO2019155707A1 (ja) 2018-02-08 2018-11-09 ダイシング装置及びダイシング方法並びにダイシングテープ
CN201880088934.1A CN111699545B (zh) 2018-02-08 2018-11-09 切割装置以及切割方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201880088934.1A Division CN111699545B (zh) 2018-02-08 2018-11-09 切割装置以及切割方法

Publications (2)

Publication Number Publication Date
CN112536700A CN112536700A (zh) 2021-03-23
CN112536700B true CN112536700B (zh) 2022-04-29

Family

ID=67549577

Family Applications (3)

Application Number Title Priority Date Filing Date
CN202110555098.7A Active CN113290484B (zh) 2018-02-08 2018-11-09 切割装置、切割方法以及切割带
CN202011396997.9A Active CN112536700B (zh) 2018-02-08 2018-11-09 切割方法以及切割装置
CN201880088934.1A Active CN111699545B (zh) 2018-02-08 2018-11-09 切割装置以及切割方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN202110555098.7A Active CN113290484B (zh) 2018-02-08 2018-11-09 切割装置、切割方法以及切割带

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201880088934.1A Active CN111699545B (zh) 2018-02-08 2018-11-09 切割装置以及切割方法

Country Status (3)

Country Link
JP (3) JP6748891B2 (ja)
CN (3) CN113290484B (ja)
WO (1) WO2019155707A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7266398B2 (ja) * 2018-12-11 2023-04-28 株式会社ディスコ 切削装置及び切削装置を用いたウエーハの加工方法
CN114057384B (zh) * 2021-12-10 2024-06-11 青岛天仁微纳科技有限责任公司 一种扫描电镜辅助定位裂片装置及使用方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013041972A (ja) * 2011-08-15 2013-02-28 Disco Abrasive Syst Ltd 切削方法
CN106024709A (zh) * 2015-03-31 2016-10-12 株式会社迪思科 晶片的分割方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03227557A (ja) * 1990-02-01 1991-10-08 Mitsubishi Electric Corp ダイシング装置
JP2003124155A (ja) * 2001-10-12 2003-04-25 Disco Abrasive Syst Ltd 切削装置
JP2005203540A (ja) * 2004-01-15 2005-07-28 Disco Abrasive Syst Ltd ウエーハの切削方法
JP4554265B2 (ja) * 2004-04-21 2010-09-29 株式会社ディスコ 切削ブレードの位置ずれ検出方法
JP4748643B2 (ja) * 2005-01-28 2011-08-17 株式会社ディスコ 切削ブレードの基準位置検出方法
JP4943688B2 (ja) * 2005-10-21 2012-05-30 株式会社ディスコ 切削装置
JP5340808B2 (ja) * 2009-05-21 2013-11-13 株式会社ディスコ 半導体ウエーハのレーザ加工方法
JP5647510B2 (ja) * 2010-12-27 2014-12-24 株式会社小金井精機製作所 切削加工装置及び切削加工方法
JP6219628B2 (ja) * 2013-07-17 2017-10-25 株式会社ディスコ 切削ブレード先端形状検出方法
JP6228044B2 (ja) * 2014-03-10 2017-11-08 株式会社ディスコ 板状物の加工方法
JP2016019249A (ja) * 2014-07-11 2016-02-01 キヤノン株式会社 表示制御装置
JP2016063060A (ja) * 2014-09-18 2016-04-25 株式会社ディスコ ウエーハの加工方法
CN106334989A (zh) * 2016-11-02 2017-01-18 佛山市百思科铁芯制造有限公司 一种变压器铁芯专用切割机

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013041972A (ja) * 2011-08-15 2013-02-28 Disco Abrasive Syst Ltd 切削方法
CN106024709A (zh) * 2015-03-31 2016-10-12 株式会社迪思科 晶片的分割方法

Also Published As

Publication number Publication date
CN113290484A (zh) 2021-08-24
CN113290484B (zh) 2023-04-25
CN111699545A (zh) 2020-09-22
JP2020037171A (ja) 2020-03-12
JP2020037169A (ja) 2020-03-12
JP6768185B2 (ja) 2020-10-14
CN111699545B (zh) 2021-09-14
JP2020037170A (ja) 2020-03-12
CN112536700A (zh) 2021-03-23
WO2019155707A1 (ja) 2019-08-15
JP6748891B2 (ja) 2020-09-02
JP6748892B2 (ja) 2020-09-02

Similar Documents

Publication Publication Date Title
JP6228044B2 (ja) 板状物の加工方法
JP6132621B2 (ja) 半導体単結晶インゴットのスライス方法
JP5214332B2 (ja) ウエーハの切削方法
JP5122880B2 (ja) レーザー加工装置のアライメント方法
CN112536700B (zh) 切割方法以及切割装置
JP5919002B2 (ja) 切削装置
JP5762005B2 (ja) 加工位置調製方法及び加工装置
JP6912267B2 (ja) レーザ加工方法
KR101786123B1 (ko) 반도체 디바이스의 제조 방법 및 레이저 가공 장치
JP6229883B2 (ja) ダイシング装置及びその切削方法
JP7445852B2 (ja) ダイシング装置及びダイシング方法
JP5679171B2 (ja) ダイシング装置及びダイシング方法
JP2011228331A (ja) 切削加工装置
JP2015209350A (ja) スクライビングツールの製造方法、スクライビングツール、スクライブ装置及びスクライブ方法
JP6252838B2 (ja) ダイシング装置及びその切削方法
TWI759496B (zh) 修整方法
JP5387887B2 (ja) 面取り加工方法及び面取り加工装置
JP2022080757A (ja) 切削ブレードの直径測定方法
JP2018206791A (ja) ウエーハの分割方法
JP2017100231A (ja) 被加工物の分割方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant