CN112514031A - 石墨烯扩散阻挡物 - Google Patents

石墨烯扩散阻挡物 Download PDF

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Publication number
CN112514031A
CN112514031A CN201980050230.XA CN201980050230A CN112514031A CN 112514031 A CN112514031 A CN 112514031A CN 201980050230 A CN201980050230 A CN 201980050230A CN 112514031 A CN112514031 A CN 112514031A
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CN
China
Prior art keywords
barrier layer
graphene barrier
layer
substrate
graphene
Prior art date
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Pending
Application number
CN201980050230.XA
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English (en)
Chinese (zh)
Inventor
巫勇
S·冈迪科塔
A·B·玛里克
S·D·耐马尼
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN202511049659.0A priority Critical patent/CN121096851A/zh
Publication of CN112514031A publication Critical patent/CN112514031A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
CN201980050230.XA 2018-08-11 2019-08-09 石墨烯扩散阻挡物 Pending CN112514031A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202511049659.0A CN121096851A (zh) 2018-08-11 2019-08-09 石墨烯扩散阻挡物

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862717824P 2018-08-11 2018-08-11
US62/717,824 2018-08-11
PCT/US2019/045872 WO2020036819A1 (en) 2018-08-11 2019-08-09 Graphene diffusion barrier

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202511049659.0A Division CN121096851A (zh) 2018-08-11 2019-08-09 石墨烯扩散阻挡物

Publications (1)

Publication Number Publication Date
CN112514031A true CN112514031A (zh) 2021-03-16

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201980050230.XA Pending CN112514031A (zh) 2018-08-11 2019-08-09 石墨烯扩散阻挡物
CN202511049659.0A Pending CN121096851A (zh) 2018-08-11 2019-08-09 石墨烯扩散阻挡物

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202511049659.0A Pending CN121096851A (zh) 2018-08-11 2019-08-09 石墨烯扩散阻挡物

Country Status (7)

Country Link
US (2) US10916505B2 (https=)
JP (1) JP7611814B2 (https=)
KR (2) KR102637671B1 (https=)
CN (2) CN112514031A (https=)
SG (1) SG11202100359SA (https=)
TW (2) TWI807639B (https=)
WO (1) WO2020036819A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112514031A (zh) * 2018-08-11 2021-03-16 应用材料公司 石墨烯扩散阻挡物
US11251129B2 (en) * 2020-03-27 2022-02-15 Intel Corporation Deposition of graphene on a dielectric surface for next generation interconnects
US12300497B2 (en) 2021-02-11 2025-05-13 Applied Materials, Inc. Method and apparatus of low temperature plasma enhanced chemical vapor deposition of graphene
JP7692775B2 (ja) * 2021-09-16 2025-06-16 東京エレクトロン株式会社 基板処理方法、基板処理装置および半導体構造
KR20230055281A (ko) 2021-10-18 2023-04-25 삼성전자주식회사 이차원 물질을 포함하는 박막 구조체 및 전자 소자
KR20230071632A (ko) 2021-11-16 2023-05-23 삼성전자주식회사 메모리 셀 스트링을 포함하는 수직형 비휘발성 메모리 장치
WO2023121714A1 (en) * 2021-12-22 2023-06-29 General Graphene Corporation Novel systems and methods for high yield and high throughput production of graphene
KR102945432B1 (ko) 2024-11-28 2026-03-31 세종대학교산학협력단 확산 방지층을 가진 산화갈륨 기반 반도체 장치 및 그 제조 방법

Citations (13)

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EP0334052A2 (en) * 1988-03-22 1989-09-27 International Business Machines Corporation Thin film transistor
JPH0484424A (ja) * 1990-07-27 1992-03-17 Sony Corp 半導体装置の製造方法
CN1155159A (zh) * 1995-12-15 1997-07-23 现代电子产业株式会社 栅电极及其形成方法
KR20000043053A (ko) * 1998-12-28 2000-07-15 김영환 반도체 소자의 금속 배선 형성 방법
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CN103121670A (zh) * 2013-02-19 2013-05-29 西安交通大学 远程等离子体增强原子层沉积低温生长石墨烯的方法
US20140106561A1 (en) * 2011-12-09 2014-04-17 Intermolecular, Inc. Graphene Barrier Layers for Interconnects and Methods for Forming the Same
US20140272350A1 (en) * 2011-10-28 2014-09-18 Cheil Industries Inc. Gas barrier film including graphene layer, flexible substrate including the same, and manufacturing method thereof
US20140339700A1 (en) * 2011-12-20 2014-11-20 University Of Florida Research Foundation, Inc. Graphene-based metal diffusion barrier
CN105355620A (zh) * 2015-12-17 2016-02-24 上海集成电路研发中心有限公司 一种铜互连结构及其制造方法
WO2016156659A1 (en) * 2015-04-01 2016-10-06 Picosun Oy Ald-deposited graphene on a conformal seed layer
CN108231734A (zh) * 2016-12-14 2018-06-29 台湾积体电路制造股份有限公司 半导体结构

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Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0334052A2 (en) * 1988-03-22 1989-09-27 International Business Machines Corporation Thin film transistor
JPH0484424A (ja) * 1990-07-27 1992-03-17 Sony Corp 半導体装置の製造方法
CN1155159A (zh) * 1995-12-15 1997-07-23 现代电子产业株式会社 栅电极及其形成方法
KR20000043053A (ko) * 1998-12-28 2000-07-15 김영환 반도체 소자의 금속 배선 형성 방법
US20140272350A1 (en) * 2011-10-28 2014-09-18 Cheil Industries Inc. Gas barrier film including graphene layer, flexible substrate including the same, and manufacturing method thereof
US20130113102A1 (en) * 2011-11-08 2013-05-09 International Business Machines Corporation Semiconductor interconnect structure having a graphene-based barrier metal layer
US20140106561A1 (en) * 2011-12-09 2014-04-17 Intermolecular, Inc. Graphene Barrier Layers for Interconnects and Methods for Forming the Same
US20140339700A1 (en) * 2011-12-20 2014-11-20 University Of Florida Research Foundation, Inc. Graphene-based metal diffusion barrier
CN102593097A (zh) * 2012-02-27 2012-07-18 北京大学 一种集成电路金属互连结构及其制备方法
CN103121670A (zh) * 2013-02-19 2013-05-29 西安交通大学 远程等离子体增强原子层沉积低温生长石墨烯的方法
WO2016156659A1 (en) * 2015-04-01 2016-10-06 Picosun Oy Ald-deposited graphene on a conformal seed layer
CN105355620A (zh) * 2015-12-17 2016-02-24 上海集成电路研发中心有限公司 一种铜互连结构及其制造方法
CN108231734A (zh) * 2016-12-14 2018-06-29 台湾积体电路制造股份有限公司 半导体结构

Also Published As

Publication number Publication date
TW202223138A (zh) 2022-06-16
KR102637671B1 (ko) 2024-02-15
WO2020036819A1 (en) 2020-02-20
KR20210031763A (ko) 2021-03-22
JP2021534572A (ja) 2021-12-09
US20200051920A1 (en) 2020-02-13
TWI758629B (zh) 2022-03-21
CN121096851A (zh) 2025-12-09
US10916505B2 (en) 2021-02-09
TWI807639B (zh) 2023-07-01
JP7611814B2 (ja) 2025-01-10
KR20230106752A (ko) 2023-07-13
US20210167021A1 (en) 2021-06-03
US11621226B2 (en) 2023-04-04
KR102554839B1 (ko) 2023-07-11
SG11202100359SA (en) 2021-02-25
TW202009135A (zh) 2020-03-01

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