CN112436070A - 一种量子点异质结日盲紫外探测芯片及其制备方法 - Google Patents
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 49
- 238000000825 ultraviolet detection Methods 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000005669 field effect Effects 0.000 claims abstract description 8
- 238000007641 inkjet printing Methods 0.000 claims description 16
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 14
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 claims description 11
- 238000004528 spin coating Methods 0.000 claims description 9
- 239000000725 suspension Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical group OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 238000001548 drop coating Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 238000000926 separation method Methods 0.000 abstract description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 11
- 239000010931 gold Substances 0.000 description 8
- 239000004793 Polystyrene Substances 0.000 description 5
- 229920002223 polystyrene Polymers 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000009210 therapy by ultrasound Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- -1 Poly ethylene terephthalate Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005437 stratosphere Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Abstract
本发明公开了一种量子点异质结日盲紫外探测芯片及其制备方法，该芯片自下至上依次为基底、底栅电极、栅绝缘层、p型半导体层、本征层和n型半导体层，p型半导体层上设置有源电极，n型半导体层上设置有漏电极，p型半导体层、本征层和n型半导体层构成p‑i‑n异质结场效应沟道，该芯片的制备方法包括以下步骤：(1)在基底制备底栅电极；(2)制备栅绝缘层；(3)制备p型半导体层；(4)制备源电极；(5)制备宽禁带半导体量子点本征层；(6)制备n型半导体层；(7)制备漏电极。该芯片能够在提高内量子效率同时降低暗电流，加速分离光生电子和空穴，使光生电子和空穴分别快速转移到n区和p区，继而分别到达源电极和漏电极，提高其响应度。
Description
技术领域
本发明涉及一种日盲紫外探测芯片及其制备方法，更具体地，涉及一种量子点异质结日盲紫外探测芯片及其制备方法。
背景技术
太阳辐射中的部分紫外光，在通过大气层过程中受到热层氧原子和平流层臭氧层的强烈吸收，使得短于280nm波长的紫外光几乎达不到地球近地表空间，这个波段被称为“日盲紫外区”。针对日盲区的紫外光电探测器，基本不受太阳辐射的干扰，因此日盲紫外探测技术在民用和军用都有重要研究意义和广泛应用价值。随着新型半导体材料和器件制备工艺的发展，基于超宽禁带半导体(如AlGaN、SiZnO、MgZnO、IGZO、ZnGa2O4、Ga2O3、BiOBr等)的日盲紫外探测器已经得到较为深入的研究，具有较高的响应度和探测率，并部分实现了产业化。由于此类传统半导体器件加工工艺较为复杂、对真空沉积设备要求较高、制备成本相对高昂，在大面积生产和柔性应用方面有一定的限制。基于非高温湿化学法制备的纳米半导体量子点，是一种可以通过溶液工艺制备光电探测器的新途径，但是，超宽禁带半导体量子点的载流子迁移率较低，加上量子点表面悬挂键等表面缺陷态导致的界面势垒，载流子复合几率较高，限制了达到电极的光响应电流。
发明内容
发明目的：本发明的目的是提供一种载流子密度高、在低功耗下具备较高的响应度的量子点异质结日盲紫外探测芯片，本发明的另一目的是提供该芯片的制备方法。
技术方案：本发明所述的量子点异质结日盲紫外探测芯片，自下至上依次为基底、底栅电极、栅绝缘层、p型半导体层、本征层和n型半导体层，p型半导体层上设置有源电极，n型半导体层上设置有漏电极，本征层为宽禁带半导体量子点本征层，p型半导体层、本征层和n型半导体层构成p-i-n异质结场效应沟道。
其中，基底和底栅电极为P+硅片，宽禁带半导体量子点本征层为宽禁带宽度为不少于4.0eV的超宽禁带半导体，超宽禁带半导体为ZnS或GaOX，漏电极为Au、Pt、C电极，功函数＞4.8eV，源电极层为Ag、Al、Cu、Ni、Ti电极，功函数＜4.8eV，其势垒可降低暗电流，栅绝缘层为4-乙烯基苯酚(PVP)、SiO2或CaF2。
本发明所述的量子点异质结日盲紫外探测芯片的制备方法，包括以下步骤：
(1)对基底进行预处理，并通过热蒸发、磁控溅射或打印工艺在基底上制备底栅电极；
(2)在底栅电极上利用磁控溅射法或喷墨打印法沉积栅绝缘层；
(3)将p型半导体前驱液或量子点悬浮液，通过旋涂、点胶、或喷墨打印的方式制备在栅绝缘层上，烘干即制得p型半导体层；
(4)在p型半导体层上使用掩膜通过热蒸发、磁控溅射方法或者喷墨打印制备源电极；
(5)将宽禁带半导体量子点本征层通过滴涂、旋涂、或喷墨打印的方式制备在p型半导体层上，烘干即制得本征层；
(6)将n型碳量子点悬浮液，通过旋涂、或喷墨打印的方式制备在本征层上，制备n型半导体层；
(7)在n型半导体层上沉积或者喷墨打印漏电极，完成表面钝化，即得量子点异质结日盲紫外探测芯片。
其中，步骤(1)中的底栅电极为Au或Ag金属底栅电极。
其中，底栅电极为P+硅片，同时P+硅片作为基底。
其中，基底为玻璃、石英或PET基底。
工作原理：本发明在场效应光电晶体管的沟道中制备量子点p-i-n异质结，源电极和漏电极的不同功函数形成势垒，通过栅极电压场效应控制沟道中的载流子密度分布，降低本征量子点中电子或空穴密度，减少复合几率，同时使n或p区的多数载流子密度提高，因此能够在低功耗下得到高的增益及外量子效率。当日盲紫外光照射在探测芯片表面，超宽禁带半导体量子点表面的光生电子在极短时间内漂移到n区，同时空穴向p区漂移，在偏压VDS以及内建电场共同形成的电场下迅速被源漏电极收集，通过栅极调控，能够提高p区电子浓度，沟道迁移率与光电流增益成正比，利用异质结沟道场效应耦合机制提高器件的响应度。
有益效果：本发明与现有技术相比，其显著优点是：1、能够在提高内量子效率的同时降低暗电流，加速分离光生电子和空穴，使光生电子和空穴分别快速转移到n区和p区，继而分别到达源电极和漏电极，提高其响应度；2、适用于印刷电子工艺制备，能够实现低成本、大面积生产。
附图说明
图1是实施例1结构示意图；
图2是实施例1剖面结构示意图；
图3是实施例2结构示意图。
具体实施方式
实施例1
如图1、图2所示的量子点异质结日盲紫外光探测芯片，自下至上依次为PET基底101、Ag金属底栅电极102、4-乙烯基苯酚(PVP)栅极绝缘层103、p型MnO半导体层104、Ga2O3量子点本征层106和n型碳量子点半导体层107，p型MnO半导体层104上设置有Ag源电极105，n型碳量子点半导体层107上设置有Au漏电极108，Ga2O3量子点本征层106与p型MnO半导体层104、n型碳量子点半导体层107形成p-i-n异质结场效应沟道，其制备方法包括如下步骤：
(1)将PET基底101依次在去离子水、丙酮、异丙醇中超声15分钟，放置于烘箱中在110℃条件下烘干，通过喷墨打印方法，在PET基底101上制备金属底栅电极102，在金属底栅电极102上通过旋涂PVP前驱体溶液，并置于200℃下退火30分钟，制备PVP栅极绝缘层103；
(2)将MnO量子点悬浮液，通过喷墨打印的方式制备在PVP栅极绝缘层103上，随即再烘干，作为p型MnO半导体层104；
(3)通过喷墨打印银导电墨水，在p型MnO半导体层104上制备Ag源电极105；
(4)将Ga2O3超宽禁带半导体量子点悬浮液，通过点胶的方式制备在p型MnO半导体层104上，随即烘干，制得Ga2O3量子点本征层106；
(5)将n型碳量子点悬浮液，通过点胶方式制备在Ga2O3量子点本征层106上，制得n型碳量子点半导体层107；
(6)在n型碳量子点半导体层107上喷墨打印金导电墨水制备Au漏电极108；最后完成表面钝化，即得量子点异质结日盲紫外光探测芯片。
实施例2
如图3所示的量子点异质结日盲紫外光探测芯片，自下至上依次为p+型硅片底栅电极201、CaF2栅绝缘层202、p型PEDOT:PSS半导体层203、ZnS量子点本征层205和n型碳量子点半导体层206，p型PEDOT:PSS半导体层203上设置有Ag源电极204，n型碳量子点半导体层206上设置有Au漏电极207，ZnS量子点本征层205与p型PEDOT:PSS半导体层203、n型碳量子点半导体层206形成p-i-n异质结场效应沟道，其制备方法包括如下步骤：
(1)将p+型硅片依次在去离子水、丙酮、异丙醇中超声15分钟，放置于烘箱中在110℃条件下烘干，直接作为p+型硅片底栅电极201，在p+型硅片底栅电极201上通过磁控溅射制备CaF2栅绝缘层202；
(2)将PEDOT:PSS前驱液，通过旋涂的方式制备在CaF2栅绝缘层202上，随即再烘干，作为p型PEDOT:PSS半导体层203；
(3)利用热蒸发在p型PEDOT:PSS半导体层203上制备Ag源电极204；
(4)将ZnS超宽禁带半导体量子点悬浮液，通过旋涂制备在p型PEDOT:PSS半导体层203上，随即烘干，制得ZnS量子点本征层205；
(5)将n型碳量子点悬浮液，通过点胶方式制备在ZnS量子点本征层205上，制得n型碳量子点半导体层206；
(6)在n型碳量子点半导体层206上喷墨打印金导电墨水制备Au漏电极207；最后完成表面钝化，即得量子点异质结日盲紫外光探测芯片。
Claims (10)
1.一种量子点异质结日盲紫外探测芯片，其特征在于，自下至上依次为基底、底栅电极、栅绝缘层、p型半导体层、本征层和n型半导体层，所述p型半导体层上设置有源电极，所述n型半导体层上设置有漏电极，所述本征层为宽禁带半导体量子点本征层，所述p型半导体层、本征层和n型半导体层构成p-i-n异质结场效应沟道。
2.根据权利要求1所述的量子点异质结日盲紫外探测芯片，其特征在于，所述基底和底栅电极为P+硅片。
3.根据权利要求1所述的量子点异质结日盲紫外探测芯片，其特征在于，所述宽禁带半导体量子点本征层为宽禁带宽度为不少于4.0eV的超宽禁带半导体。
4.根据权利要求1所述的量子点异质结日盲紫外探测芯片，其特征在于，所述超宽禁带半导体为ZnS或GaOX。
5.根据权利要求1所述的量子点异质结日盲紫外探测芯片，其特征在于，所述漏电极为Au、Pt或C电极，功函数＞4.8eV，所述源电极层为Ag、Al、Cu、Ni或Ti电极，功函数＜4.8eV。
6.根据权利要求1所说的量子点异质结日盲紫外探测芯片，其特征在于，所述绝缘层为4-乙烯基苯酚、SiO2或CaF2。
7.一种权利要求1所述的量子点异质结日盲紫外探测芯片的制备方法，其特征在于，包括以下步骤：
(1)对基底进行预处理，并通过热蒸发、磁控溅射或打印工艺在基底上制备底栅电极；
(2)在底栅电极上利用磁控溅射法或喷墨打印法沉积栅绝缘层；
(3)将p型半导体前驱液或量子点悬浮液，通过旋涂、点胶、或喷墨打印的方式制备在栅绝缘层上，烘干即制得p型半导体层；
(4)在p型半导体层上使用掩膜通过热蒸发、磁控溅射方法或者喷墨打印制备源电极；
(5)将宽禁带半导体量子点本征层通过滴涂、旋涂、或喷墨打印的方式制备在p型半导体层上，烘干即制得本征层；
(6)将n型碳量子点悬浮液，通过旋涂、或喷墨打印的方式制备在本征层上，制备n型半导体层；
(7)在n型半导体层上沉积或者喷墨打印漏电极，完成表面钝化，即得量子点异质结日盲紫外探测芯片。
8.根据权利要求7所述的量子点异质结日盲紫外探测芯片的制备方法，其特征在于，所述步骤(1)中的底栅电极为Au或Ag金属底栅电极。
9.根据权利要求7所述的量子点异质结日盲紫外探测芯片的制备方法，其特征在于，所述步骤(1)中的底栅电极为P+硅片，同时P+硅片作为基底。
10.根据权利要求7所述的量子点异质结日盲紫外探测芯片的制备方法，其特征在于，所述基底为玻璃、石英或PET基底。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112864270A (zh) * | 2021-03-04 | 2021-05-28 | 南京信息工程大学 | 光晶体管集成传感核心的无光栅量子点光谱探测器 |
| CN113299789A (zh) * | 2021-05-18 | 2021-08-24 | 中国科学院宁波材料技术与工程研究所 | 一种日盲紫外光电探测器及其应用 |
| CN113314642A (zh) * | 2021-05-28 | 2021-08-27 | 吉林建筑大学 | 一种双绝缘层日盲紫外光敏薄膜晶体管的制备方法 |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150014627A1 (en) * | 2006-11-07 | 2015-01-15 | Cbrite Inc. | Two-terminal electronic devices and their methods of fabrication |
| CN105552131A (zh) * | 2016-01-27 | 2016-05-04 | 东南大学 | 基于量子点掺杂栅绝缘层的新型高性能光调制薄膜晶体管 |
| WO2018103645A1 (zh) * | 2016-12-08 | 2018-06-14 | 西安电子科技大学 | Ga2O3/SiC异质结NPN/PNP光电晶体管的制备方法 |
| CN108649082A (zh) * | 2018-04-18 | 2018-10-12 | 南京信息工程大学 | 一种ZnS碳量子点日盲紫外探测器及其制备方法 |
| CN109297601A (zh) * | 2018-11-13 | 2019-02-01 | 太原理工大学 | 基于双滤波器增强量子点日盲紫外光成像系统的设计方法 |
| CN110364625A (zh) * | 2019-06-18 | 2019-10-22 | 北京大学深圳研究生院 | 一种用于弱光探测的钙钛矿量子点光电晶体管及制备方法 |
| CN110429147A (zh) * | 2019-08-01 | 2019-11-08 | 上海芯物科技有限公司 | 一种金属氧化物合金纳米线、及其制备方法和用途 |
| CN110715727A (zh) * | 2019-11-01 | 2020-01-21 | Oppo广东移动通信有限公司 | 紫外传感器模组及移动终端 |
| US20200373454A1 (en) * | 2017-10-26 | 2020-11-26 | Emberion Oy | Photosensitive field-effect transistor |
| EP3912196A1 (en) * | 2019-01-17 | 2021-11-24 | King Abdullah University of Science and Technology | Deep ultra-violet devices using ultra-violet nanoparticles with p-type conductivity |
-
2020
- 2020-12-01 CN CN202011381986.3A patent/CN112436070B/zh active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150014627A1 (en) * | 2006-11-07 | 2015-01-15 | Cbrite Inc. | Two-terminal electronic devices and their methods of fabrication |
| CN105552131A (zh) * | 2016-01-27 | 2016-05-04 | 东南大学 | 基于量子点掺杂栅绝缘层的新型高性能光调制薄膜晶体管 |
| WO2018103645A1 (zh) * | 2016-12-08 | 2018-06-14 | 西安电子科技大学 | Ga2O3/SiC异质结NPN/PNP光电晶体管的制备方法 |
| US20200373454A1 (en) * | 2017-10-26 | 2020-11-26 | Emberion Oy | Photosensitive field-effect transistor |
| CN108649082A (zh) * | 2018-04-18 | 2018-10-12 | 南京信息工程大学 | 一种ZnS碳量子点日盲紫外探测器及其制备方法 |
| CN109297601A (zh) * | 2018-11-13 | 2019-02-01 | 太原理工大学 | 基于双滤波器增强量子点日盲紫外光成像系统的设计方法 |
| EP3912196A1 (en) * | 2019-01-17 | 2021-11-24 | King Abdullah University of Science and Technology | Deep ultra-violet devices using ultra-violet nanoparticles with p-type conductivity |
| CN110364625A (zh) * | 2019-06-18 | 2019-10-22 | 北京大学深圳研究生院 | 一种用于弱光探测的钙钛矿量子点光电晶体管及制备方法 |
| CN110429147A (zh) * | 2019-08-01 | 2019-11-08 | 上海芯物科技有限公司 | 一种金属氧化物合金纳米线、及其制备方法和用途 |
| CN110715727A (zh) * | 2019-11-01 | 2020-01-21 | Oppo广东移动通信有限公司 | 紫外传感器模组及移动终端 |
Non-Patent Citations (1)
| Title |
|---|
| WEN-JIAN KUANG 等: "ZnS/Carbon Quantum Dot Heterojunction Phototransistors for Solar-Blind Ultraviolet Detection", 《IEEE PHOTONICS TECHNOLOGY LETTERS》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112864270A (zh) * | 2021-03-04 | 2021-05-28 | 南京信息工程大学 | 光晶体管集成传感核心的无光栅量子点光谱探测器 |
| CN113299789A (zh) * | 2021-05-18 | 2021-08-24 | 中国科学院宁波材料技术与工程研究所 | 一种日盲紫外光电探测器及其应用 |
| CN113314642A (zh) * | 2021-05-28 | 2021-08-27 | 吉林建筑大学 | 一种双绝缘层日盲紫外光敏薄膜晶体管的制备方法 |
| CN113314642B (zh) * | 2021-05-28 | 2022-06-21 | 吉林建筑大学 | 一种双绝缘层日盲紫外光敏薄膜晶体管的制备方法 |
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