CN1123420A - 用于制造半导体器件的光掩模的制造方法 - Google Patents

用于制造半导体器件的光掩模的制造方法 Download PDF

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Publication number
CN1123420A
CN1123420A CN95115216A CN95115216A CN1123420A CN 1123420 A CN1123420 A CN 1123420A CN 95115216 A CN95115216 A CN 95115216A CN 95115216 A CN95115216 A CN 95115216A CN 1123420 A CN1123420 A CN 1123420A
Authority
CN
China
Prior art keywords
width
manufacturing
photomask
chromium
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN95115216A
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English (en)
Chinese (zh)
Inventor
黄儁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of CN1123420A publication Critical patent/CN1123420A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN95115216A 1994-07-28 1995-07-28 用于制造半导体器件的光掩模的制造方法 Pending CN1123420A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR18408/94 1994-07-28
KR1019940018408A KR960005756A (ko) 1994-07-28 1994-07-28 반도체 소자 제조용 포토 마스크 제작 방법

Publications (1)

Publication Number Publication Date
CN1123420A true CN1123420A (zh) 1996-05-29

Family

ID=19389111

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95115216A Pending CN1123420A (zh) 1994-07-28 1995-07-28 用于制造半导体器件的光掩模的制造方法

Country Status (4)

Country Link
KR (1) KR960005756A (ko)
CN (1) CN1123420A (ko)
DE (1) DE19527683A1 (ko)
GB (1) GB2291982A (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1299164C (zh) * 2003-04-08 2007-02-07 旺宏电子股份有限公司 消除密集图案与单一图案的关键尺寸偏差的方法
CN100562802C (zh) * 2000-08-30 2009-11-25 株式会社东芝 光掩模的制造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821014A (en) * 1997-02-28 1998-10-13 Microunity Systems Engineering, Inc. Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask
JP3085259B2 (ja) * 1997-09-17 2000-09-04 日本電気株式会社 露光パターン及びその発生方法
KR20000045422A (ko) * 1998-12-30 2000-07-15 김영환 반도체 소자의 미세패턴 형성방법
US6436585B1 (en) * 2000-02-25 2002-08-20 International Business Machines Corporation Method of using optical proximity effects to create electrically blown fuses with sub-critical dimension neck downs
JP2001312045A (ja) * 2000-05-02 2001-11-09 Sharp Corp マスクの形成方法
US20040058550A1 (en) * 2002-09-19 2004-03-25 Infineon Technologies North America Corp. Dummy patterns for reducing proximity effects and method of using same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57121226A (en) * 1981-01-21 1982-07-28 Hitachi Ltd Photo mask
JPH06188270A (ja) * 1992-12-15 1994-07-08 Mitsubishi Electric Corp 電界効果トランジスタの製造方法及びパターン転写マスク

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100562802C (zh) * 2000-08-30 2009-11-25 株式会社东芝 光掩模的制造方法
CN1299164C (zh) * 2003-04-08 2007-02-07 旺宏电子股份有限公司 消除密集图案与单一图案的关键尺寸偏差的方法

Also Published As

Publication number Publication date
GB2291982A (en) 1996-02-07
DE19527683A1 (de) 1996-02-01
KR960005756A (ko) 1996-02-23
GB9515230D0 (en) 1995-09-20

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C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication