CN112335342B - 用于远程等离子源的自由基输出监控器和使用方法 - Google Patents
用于远程等离子源的自由基输出监控器和使用方法 Download PDFInfo
- Publication number
- CN112335342B CN112335342B CN201980038899.7A CN201980038899A CN112335342B CN 112335342 B CN112335342 B CN 112335342B CN 201980038899 A CN201980038899 A CN 201980038899A CN 112335342 B CN112335342 B CN 112335342B
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- plasma source
- gas
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- thermal sensor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
- H05H1/0068—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by thermal means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32954—Electron temperature measurement
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862684820P | 2018-06-14 | 2018-06-14 | |
| US62/684,820 | 2018-06-14 | ||
| PCT/US2019/036796 WO2019241405A1 (en) | 2018-06-14 | 2019-06-12 | Radical output monitor for a remote plasma source and method of use |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112335342A CN112335342A (zh) | 2021-02-05 |
| CN112335342B true CN112335342B (zh) | 2023-07-14 |
Family
ID=68840258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980038899.7A Active CN112335342B (zh) | 2018-06-14 | 2019-06-12 | 用于远程等离子源的自由基输出监控器和使用方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11114287B2 (https=) |
| EP (1) | EP3785494B8 (https=) |
| JP (1) | JP7301075B2 (https=) |
| KR (1) | KR102697703B1 (https=) |
| CN (1) | CN112335342B (https=) |
| SG (1) | SG11202011069RA (https=) |
| TW (1) | TWI809122B (https=) |
| WO (1) | WO2019241405A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG11201912566WA (en) | 2017-06-27 | 2020-01-30 | Canon Anelva Corp | Plasma processing apparatus |
| KR102257134B1 (ko) | 2017-06-27 | 2021-05-26 | 캐논 아네르바 가부시키가이샤 | 플라스마 처리 장치 |
| TWI745813B (zh) | 2017-06-27 | 2021-11-11 | 日商佳能安內華股份有限公司 | 電漿處理裝置 |
| EP3648551B1 (en) | 2017-06-27 | 2021-08-18 | Canon Anelva Corporation | Plasma treatment device |
| CN112292911A (zh) * | 2018-06-26 | 2021-01-29 | 佳能安内华股份有限公司 | 等离子体处理装置、等离子体处理方法、程序和存储介质 |
| CN115900990A (zh) * | 2023-01-03 | 2023-04-04 | 大连理工大学 | 用于七通道级联弧等离子体源的温度监测系统 |
| CN120264567B (zh) * | 2025-04-29 | 2026-04-21 | 江苏神州半导体科技股份有限公司 | 一种远程等离子发生器 |
| CN120870230A (zh) * | 2025-09-24 | 2025-10-31 | 江苏神州半导体科技有限公司 | 一种远程等离子体源解离率监测装置及监测方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1212363A (zh) * | 1997-09-15 | 1999-03-31 | 西门子公司 | 通过测量气体温度测量和控制半导体晶片的温度 |
| WO2000065631A2 (en) * | 1999-04-22 | 2000-11-02 | Applied Materials, Inc. | Apparatus and method for exposing a substrate to plasma radicals |
| JP2001274148A (ja) * | 2000-03-24 | 2001-10-05 | Tokyo Electron Ltd | プラズマ処理装置及び方法 |
| EP1156511A1 (en) * | 2000-05-19 | 2001-11-21 | Applied Materials, Inc. | Remote plasma CVD apparatus |
| CN103094045A (zh) * | 2011-10-05 | 2013-05-08 | 应用材料公司 | 对称等离子体处理室 |
Family Cites Families (69)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4918031A (en) | 1988-12-28 | 1990-04-17 | American Telephone And Telegraph Company,At&T Bell Laboratories | Processes depending on plasma generation using a helical resonator |
| US5122251A (en) | 1989-06-13 | 1992-06-16 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| US5429070A (en) | 1989-06-13 | 1995-07-04 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| JP3381916B2 (ja) | 1990-01-04 | 2003-03-04 | マトソン テクノロジー,インコーポレイテッド | 低周波誘導型高周波プラズマ反応装置 |
| JP2635267B2 (ja) | 1991-06-27 | 1997-07-30 | アプライド マテリアルズ インコーポレイテッド | Rfプラズマ処理装置 |
| US6024826A (en) * | 1996-05-13 | 2000-02-15 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US5349154A (en) | 1991-10-16 | 1994-09-20 | Rockwell International Corporation | Diamond growth by microwave generated plasma flame |
| JPH07254496A (ja) | 1994-03-17 | 1995-10-03 | Fuji Electric Co Ltd | 誘導プラズマの発生装置 |
| US5478608A (en) | 1994-11-14 | 1995-12-26 | Gorokhovsky; Vladimir I. | Arc assisted CVD coating method and apparatus |
| US5587207A (en) | 1994-11-14 | 1996-12-24 | Gorokhovsky; Vladimir I. | Arc assisted CVD coating and sintering method |
| JPH0955372A (ja) | 1995-08-11 | 1997-02-25 | Nippon Steel Corp | プラズマ処理装置 |
| JPH10134996A (ja) | 1996-10-31 | 1998-05-22 | Nec Corp | プラズマ処理装置 |
| JP3598717B2 (ja) | 1997-03-19 | 2004-12-08 | 株式会社日立製作所 | プラズマ処理装置 |
| JP2868120B2 (ja) | 1997-06-11 | 1999-03-10 | 川崎重工業株式会社 | 電子ビーム励起プラズマ発生装置 |
| US6815633B1 (en) | 1997-06-26 | 2004-11-09 | Applied Science & Technology, Inc. | Inductively-coupled toroidal plasma source |
| US6388226B1 (en) | 1997-06-26 | 2002-05-14 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
| US6150628A (en) | 1997-06-26 | 2000-11-21 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
| US6635578B1 (en) | 1998-02-09 | 2003-10-21 | Applied Materials, Inc | Method of operating a dual chamber reactor with neutral density decoupled from ion density |
| US6352049B1 (en) | 1998-02-09 | 2002-03-05 | Applied Materials, Inc. | Plasma assisted processing chamber with separate control of species density |
| JP2003506888A (ja) | 1999-08-06 | 2003-02-18 | アドバンスト・エナジー・インダストリーズ・インコーポレイテッド | ガスおよび材料を処理する誘導結合環状プラズマ源装置およびその方法 |
| US6679981B1 (en) | 2000-05-11 | 2004-01-20 | Applied Materials, Inc. | Inductive plasma loop enhancing magnetron sputtering |
| US6418874B1 (en) | 2000-05-25 | 2002-07-16 | Applied Materials, Inc. | Toroidal plasma source for plasma processing |
| EP1162646A3 (en) | 2000-06-06 | 2004-10-13 | Matsushita Electric Works, Ltd. | Plasma treatment apparatus and method |
| RU2209532C2 (ru) | 2001-10-10 | 2003-07-27 | Сорокин Игорь Борисович | Плазменный ускоритель с замкнутым дрейфом электронов |
| US6855906B2 (en) | 2001-10-16 | 2005-02-15 | Adam Alexander Brailove | Induction plasma reactor |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US20030164143A1 (en) | 2002-01-10 | 2003-09-04 | Hitachi Kokusai Electric Inc. | Batch-type remote plasma processing apparatus |
| JP2004047192A (ja) | 2002-07-10 | 2004-02-12 | Adtec Plasma Technology Co Ltd | 透磁コアによるトランス放電型プラズマ発生装置 |
| NO20024248D0 (no) | 2002-09-05 | 2002-09-05 | Seppo Konkola | Metode og utstyr for aksellererende strömmende plasma gasskombinasjoner |
| JP4472372B2 (ja) | 2003-02-03 | 2010-06-02 | 株式会社オクテック | プラズマ処理装置及びプラズマ処理装置用の電極板 |
| KR100520979B1 (ko) | 2003-03-07 | 2005-10-12 | 위순임 | 원격 플라즈마 발생기를 이용한 진공 프로세스 챔버 |
| US6872909B2 (en) | 2003-04-16 | 2005-03-29 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel |
| US8053700B2 (en) | 2003-04-16 | 2011-11-08 | Mks Instruments, Inc. | Applicators and cooling systems for a plasma device |
| JP4460940B2 (ja) | 2003-05-07 | 2010-05-12 | 株式会社ニューパワープラズマ | 多重放電管ブリッジを備えた誘導プラズマチャンバ |
| US6902646B2 (en) * | 2003-08-14 | 2005-06-07 | Advanced Energy Industries, Inc. | Sensor array for measuring plasma characteristics in plasma processing environments |
| US7071118B2 (en) | 2003-11-12 | 2006-07-04 | Veeco Instruments, Inc. | Method and apparatus for fabricating a conformal thin film on a substrate |
| US7396431B2 (en) | 2004-09-30 | 2008-07-08 | Tokyo Electron Limited | Plasma processing system for treating a substrate |
| US7268084B2 (en) | 2004-09-30 | 2007-09-11 | Tokyo Electron Limited | Method for treating a substrate |
| GB2442990A (en) | 2004-10-04 | 2008-04-23 | C Tech Innovation Ltd | Microwave plasma apparatus |
| US20060118240A1 (en) | 2004-12-03 | 2006-06-08 | Applied Science And Technology, Inc. | Methods and apparatus for downstream dissociation of gases |
| JP5536981B2 (ja) | 2004-12-20 | 2014-07-02 | パーサー、ケネス、エイチ. | 低エネルギー/高電流リボン・ビーム注入装置におけるビーム中和の改善 |
| KR100720989B1 (ko) | 2005-07-15 | 2007-05-28 | 주식회사 뉴파워 프라즈마 | 멀티 챔버 플라즈마 프로세스 시스템 |
| US7550381B2 (en) | 2005-07-18 | 2009-06-23 | Applied Materials, Inc. | Contact clean by remote plasma and repair of silicide surface |
| US20070128862A1 (en) | 2005-11-04 | 2007-06-07 | Paul Ma | Apparatus and process for plasma-enhanced atomic layer deposition |
| KR100799175B1 (ko) | 2006-04-21 | 2008-02-01 | 주식회사 뉴파워 프라즈마 | 플라즈마 프로세싱 시스템 및 그 제어 방법 |
| JP5257917B2 (ja) | 2006-04-24 | 2013-08-07 | 株式会社ニューパワープラズマ | 多重マグネチックコアが結合された誘導結合プラズマ反応器 |
| CN101466445A (zh) * | 2006-06-12 | 2009-06-24 | 山米奎普公司 | 到处于真空状态下的装置的蒸气传送 |
| US7837826B2 (en) | 2006-07-18 | 2010-11-23 | Lam Research Corporation | Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof |
| CN101939812B (zh) | 2007-10-19 | 2013-05-01 | Mks仪器股份有限公司 | 用于高气体流速处理的环形等离子体室 |
| JP5423205B2 (ja) * | 2008-08-29 | 2014-02-19 | 東京エレクトロン株式会社 | 成膜装置 |
| US8537958B2 (en) | 2009-02-04 | 2013-09-17 | General Fusion, Inc. | Systems and methods for compressing plasma |
| EP2471087A1 (en) | 2009-08-27 | 2012-07-04 | Mosaic Crystals Ltd. | Penetrating plasma generating apparatus for high vacuum chambers |
| JP5469991B2 (ja) * | 2009-10-19 | 2014-04-16 | 株式会社アルバック | 分析装置 |
| US9190289B2 (en) * | 2010-02-26 | 2015-11-17 | Lam Research Corporation | System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas |
| JP5618766B2 (ja) * | 2010-10-27 | 2014-11-05 | 株式会社アルバック | ラジカル測定装置及びラジカル測定管 |
| US8723423B2 (en) | 2011-01-25 | 2014-05-13 | Advanced Energy Industries, Inc. | Electrostatic remote plasma source |
| US9035553B2 (en) | 2011-11-09 | 2015-05-19 | Dae-Kyu Choi | Hybrid plasma reactor |
| US20130118589A1 (en) | 2011-11-15 | 2013-05-16 | Mks Instruments, Inc. | Toroidal Plasma Channel with Varying Cross-Section Areas Along the Channel |
| WO2014007472A1 (en) | 2012-07-03 | 2014-01-09 | Plasmart Inc. | Plasma generation apparatus and plasma generation method |
| US10316409B2 (en) * | 2012-12-21 | 2019-06-11 | Novellus Systems, Inc. | Radical source design for remote plasma atomic layer deposition |
| US9653266B2 (en) * | 2014-03-27 | 2017-05-16 | Mks Instruments, Inc. | Microwave plasma applicator with improved power uniformity |
| WO2016039940A1 (en) * | 2014-09-12 | 2016-03-17 | Applied Materials, Inc. | Controller for treatment of semiconductor processing equipment effluent |
| EP3268619B1 (en) | 2015-03-11 | 2020-05-06 | General Fusion, Inc. | Modular compression chamber |
| KR102376982B1 (ko) * | 2015-04-14 | 2022-03-21 | 삼성전자주식회사 | 세라믹을 이용하여 파티클 저감 효과를 가지는 원격 플라즈마 발생장치 |
| KR102125028B1 (ko) * | 2015-04-30 | 2020-06-19 | (주) 엔피홀딩스 | 마그네틱 코어 냉각용 냉각키트 및 이를 구비한 플라즈마 반응기 |
| WO2017189194A1 (en) * | 2016-04-26 | 2017-11-02 | Applied Materials, Inc. | Temperature controlled remote plasma clean for exhaust deposit removal |
| US11837479B2 (en) * | 2016-05-05 | 2023-12-05 | Applied Materials, Inc. | Advanced temperature control for wafer carrier in plasma processing chamber |
| US20190006154A1 (en) | 2017-06-28 | 2019-01-03 | Chaolin Hu | Toroidal Plasma Chamber |
| US10329976B2 (en) * | 2017-08-11 | 2019-06-25 | Gm Global Technology Operations Llc. | Non-thermal plasma/ozone-assisted catalytic system and use in exhaust systems |
-
2019
- 2019-06-12 CN CN201980038899.7A patent/CN112335342B/zh active Active
- 2019-06-12 SG SG11202011069RA patent/SG11202011069RA/en unknown
- 2019-06-12 JP JP2020568979A patent/JP7301075B2/ja active Active
- 2019-06-12 EP EP19818618.1A patent/EP3785494B8/en active Active
- 2019-06-12 WO PCT/US2019/036796 patent/WO2019241405A1/en not_active Ceased
- 2019-06-12 US US16/438,827 patent/US11114287B2/en active Active
- 2019-06-12 KR KR1020217001013A patent/KR102697703B1/ko active Active
- 2019-06-13 TW TW108120410A patent/TWI809122B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1212363A (zh) * | 1997-09-15 | 1999-03-31 | 西门子公司 | 通过测量气体温度测量和控制半导体晶片的温度 |
| WO2000065631A2 (en) * | 1999-04-22 | 2000-11-02 | Applied Materials, Inc. | Apparatus and method for exposing a substrate to plasma radicals |
| JP2001274148A (ja) * | 2000-03-24 | 2001-10-05 | Tokyo Electron Ltd | プラズマ処理装置及び方法 |
| EP1156511A1 (en) * | 2000-05-19 | 2001-11-21 | Applied Materials, Inc. | Remote plasma CVD apparatus |
| CN103094045A (zh) * | 2011-10-05 | 2013-05-08 | 应用材料公司 | 对称等离子体处理室 |
Non-Patent Citations (1)
| Title |
|---|
| 低温等离子体处理恶臭废气研究;马竞涛;周则飞;吴祖成;吕功煊;俞仁明;;环境工程(第06期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102697703B1 (ko) | 2024-08-23 |
| EP3785494A4 (en) | 2022-01-26 |
| TW202017074A (zh) | 2020-05-01 |
| KR20210009428A (ko) | 2021-01-26 |
| EP3785494B1 (en) | 2026-02-18 |
| WO2019241405A1 (en) | 2019-12-19 |
| TWI809122B (zh) | 2023-07-21 |
| EP3785494A1 (en) | 2021-03-03 |
| US11114287B2 (en) | 2021-09-07 |
| EP3785494B8 (en) | 2026-04-01 |
| US20190385829A1 (en) | 2019-12-19 |
| JP7301075B2 (ja) | 2023-06-30 |
| JP2021530076A (ja) | 2021-11-04 |
| SG11202011069RA (en) | 2020-12-30 |
| CN112335342A (zh) | 2021-02-05 |
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