CN112309874A - 封装件及其形成方法 - Google Patents
封装件及其形成方法 Download PDFInfo
- Publication number
- CN112309874A CN112309874A CN202010237003.2A CN202010237003A CN112309874A CN 112309874 A CN112309874 A CN 112309874A CN 202010237003 A CN202010237003 A CN 202010237003A CN 112309874 A CN112309874 A CN 112309874A
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- package
- core frame
- package component
- core
- dielectric
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Abstract
一种方法包括将封装部件放置在载体上方。封装部件包括器件管芯。将核心框架放置在载体上方。核心框架形成环绕第一封装部件的环。该方法还包括将核心框架和封装部件密封在密封剂中,在核心框架和封装部件上方形成再分布线,以及在封装部件上方形成电连接件,电连接件通过再分布线电耦合到封装部件。本发明的实施例还涉及封装件及其形成方法。
Description
技术领域
本发明的实施例涉及封装件及其形成方法。
背景技术
高性能计算(HPC)封装件越来越多地用于诸如人工智能(AI)应用的性能要求高的应用。HPC封装件的尺寸也变得越来越大。较大的尺寸导致封装件具有显著的翘曲。
HPC封装件可以包括结合到封装衬底的封装件。为了控制翘曲,增加封装衬底的厚度以改善抗翘曲性。然而,该解决方案导致HPC封装件中的电路径更长,并且导致IR下降的增加,这可能严重降低HPC封装件的性能。
发明内容
本发明的实施例提供了一种形成封装件的方法,包括:将第一封装部件放置在载体上方,其中,所述第一封装部件包括器件管芯;将核心框架放置在所述载体上方,其中,所述核心框架形成环绕所述第一封装部件的环;将所述核心框架和所述第一封装部件密封在密封剂中;在所述核心框架和所述第一封装部件上方形成再分布线;以及在所述第一封装部件上方形成电连接件,所述电连接件通过所述再分布线电耦合到所述第一封装部件。
本发明的另一实施例提供了一种形成封装件的方法,包括:将核心框架放置在载体上方,其中,所述核心框架包括:核心电介质;以及第一金属板和第二金属板,位于所述核心电介质的相对侧上;将封装部件放置在所述核心框架的开口中和所述载体上方,其中,所述封装部件包括器件管芯;将所述核心框架和所述封装部件密封在密封剂中;以及在所述核心框架和所述封装部件上方形成再分布线,其中,所述再分布线电连接到所述封装部件,并且与所述核心框架电解耦。
本发明的又一实施例提供了一种封装件,包括:封装部件,所述封装部件中包括器件管芯;核心框架,形成环绕所述封装部件的环;密封剂,将所述封装部件和所述核心框架密封在其中;多个介电层,位于所述密封剂上方;以及再分布线,位于所述多个介电层中,其中,所述再分布线电连接到所述封装部件,并且与所述核心框架电解耦。
附图说明
当结合附图进行阅读时,从以下详细描述可最佳理解本发明的各个方面。应该强调,根据工业中的标准实践,各个部件未按比例绘制并且仅用于说明的目的。实际上,为了清楚的讨论,各个部件的尺寸可以任意地增大或减小。
图1、图2A、图2B、图3A、图3B和图4至图10示出了根据一些实施例的封装件的形成中的中间阶段的截面图和立体图。
图11A和图11B分别示出了根据一些实施例的放置在圆形载体和矩形载体上的封装件和核心框架的顶视图。
图12至图15示出了根据一些实施例的封装件的形成中的中间阶段的截面图。
图16示出了根据一些实施例的用于形成封装件的工艺流程。
具体实施方式
以下公开内容提供了许多用于实现本发明的不同特征不同的实施例或实例。下面描述了组件和布置的具体实施例或实例以简化本发明。当然这些仅是实例而不旨在限制。例如,在以下描述中,在第二部件上方或者上形成第一部件可以包括第一部件和第二部件直接接触形成的实施例,并且也可以包括在第一部件和第二部件之间可以形成额外的部件,从而使得第一部件和第二部件可以不直接接触的实施例。如本文使用的,在第二部件上形成第一部件是指形成与第二部件直接接触的第一部件。此外,本发明可以在各个示例中重复参考数字和/或字母。该重复是为了简单和清楚的目的,并且其本身不指示所讨论的各个实施例和/或配置之间的关系。
此外,为了便于描述,本文中可以使用诸如“在…下方”、“在…下面”、“下部”、“在…上面”、“上部”等的空间关系术语,以描述如图中所示的一个元件或部件与另一元件或部件的关系。除了图中所示的方位外,空间关系术语旨在包括器件在使用或操作工艺中的不同方位。装置可以以其它方式定位(旋转90度或在其它方位),并且在本文中使用的空间关系描述符可以同样地作相应地解释。
根据一些实施例,提供了封装件及其形成方法。根据一些实施例,示出了封装件的形成中的中间阶段。讨论了一些实施例的一些变型。这里讨论的实施例是提供能够制作或使用本发明的主题的示例,并且本领域普通技术人员将容易理解可以在保持在不同实施例的预期范围内的情况下进行的修改。在各种视图和示例性实施例中,相同的附图标记用于表示相同的元件。尽管可以将方法实施例讨论为以特定顺序执行,但是可以以任何逻辑顺序执行其他方法实施例。
根据本发明的一些实施例,封装部件设置在由核心框架环绕的开口中。核心框架和封装部件密封在诸如模塑料的密封剂中。从密封剂开始形成再分布线(RDL)以电连接到封装部件。核心框架提供机械支撑并减少翘曲,同时它不包括穿过核心框架的镀通孔(PTH,是导电管)以用于电气路由功能。因此,在提供机械支撑的同时,核心框架的厚度不会导致所得封装件中的电信号和功率的IR降的增加。
图1、图2A、图2B、图3A、图3B和图4至图10示出了根据本发明的一些实施例的封装件的形成中的中间阶段的截面图。相应的工艺也在图16中所示的工艺流程200中示意性地反映。
图1示出了载体20和在载体20上方形成的离型膜22。载体20可以是玻璃载体、陶瓷载体等。根据本发明的一些实施例,载体20具有圆形顶视图形状,如图11A所示。载体20可具有典型硅晶圆的尺寸,可具有8英寸直径、12英寸直径或更大。根据本发明的可选实施例,载体20具有矩形顶视图形状,如图11B所示。
返回参考图1,在载体20上形成离型膜22。离型膜22可以由基于聚合物的材料(例如光热转换(LTHC)材料)形成,它可以与将在后续工艺中形成的上面的结构一起从载体20去除。根据本发明的一些实施例,离型膜22由基于环氧树脂的热释放材料形成。根据本发明的一些实施例,在离型膜22上方形成管芯附接膜(DAF)23。DAF 23是粘合剂膜,并且可以是涂布或层压的。根据可选实施例,代替形成晶圆尺寸的DAF,在将要附着在离型膜22上方的部件下方形成单独的DAF。
图2A和图2B示出了离型膜22上方的封装部件24的放置,例如,通过DAF 23。相应的工艺示出为图16中所示的工艺流程200中的工艺202。封装部件24可以是通过封装工艺形成的封装件,它可包括逻辑管芯(诸如计算管芯)、存储器管芯(诸如动态随机存取存储器(DRAM)管芯或静态随机存取存储器(SRAM)管芯)、光子管芯、封装件(包括已经封装件的器件管芯)、输入-输出(IO)管芯、数字管芯、模拟管芯、表面安装无源器件等。封装部件24中的管芯可以密封在一种或多种密封剂中,诸如模塑料、底部填充物等。封装部件24也可以是器件管芯。根据本发明的一些实施例,封装部件24是高性能计算(HPC)封装件,它可以用于诸如人工智能(AI)应用的性能要求高的应用中。图2A示出了封装部件24的示例,并且封装部件24可以具有其他结构。
根据本发明的一些实施例,封装部件24包括片上系统(SoC)管芯100,SoC管芯100是包括接合在一起以形成系统的器件管芯的封装件。未详细示出SoC管芯100中的器件管芯。SoC管芯100可以在表面处包括金属凸块102,并且金属凸块102可以嵌入在表面介电层104中。根据本发明的一些实施例,表面介电层104由诸如聚苯并恶唑(PBO)、聚酰亚胺、苯并环丁烯(BCB)等的聚合物形成。金属凸块102可以由铜、镍、钯、金、它们的复合层和/或它们的合金形成。
封装部件24还可以包括高带宽存储器(HBM)堆叠件108,其中每个HBM堆叠件108包括堆叠在一起以形成存储器堆叠件的多个存储器管芯110。存储器管芯110可以是DRAM管芯、SRAM管芯或其他类型的存储器管芯。未详细示出SoC管芯100中的器件管芯。HBM堆叠件108可以包括在表面处的金属凸块112,并且金属凸块112可以嵌入在HBM堆叠件108的表面介电层114或密封剂122中。根据本发明的一些实施例,表面介电层114由诸如PBO、聚酰亚胺、BCB等的聚合物形成。金属凸块112也可以由铜、镍、钯、金、它们的复合层和/或它们的合金形成。
根据本发明的一些实施例,封装部件24的形成包括将多个SoC管芯100和多个HBM堆叠件108放置到另一个载体(未示出)上,将多个SoC管芯100和多个HBM堆叠件108密封在密封剂122中,以及执行平坦化工艺,诸如化学机械抛光(CMP)工艺或机械研磨工艺,直到暴露出金属凸块102和112。然后在SoC管芯100、HBM堆叠件108和密封剂122上方形成互连结构120。互连结构120包括介电层118和位于介电层118中的RDL 116。表面导电部件(诸如金属焊盘、金属柱等)124形成在封装部件24的顶面处。因此,形成重建晶圆,重建晶圆包括多个SoC管芯100和多个HBM堆叠件108。然后可以执行分割工艺以将重建晶圆锯切成多个封装部件24。
根据可选实施例,互连结构120可以预先形成为封装衬底条(有芯或无芯)、中介层晶圆(具有穿透相应衬底的通孔)等,而不是在多个SoC管芯100和多个HBM堆叠件108的密封之后逐层形成。当互连结构120是中介层时,它可以包括半导体衬底(诸如硅衬底)以及穿透半导体衬底以互连半导体衬底的相对侧上的导电部件的通孔。相应封装部件24的形成可以包括将多个SoC管芯100和多个HBM堆叠件108接合到中介层晶圆或封装衬底条上,其中分别包括多个中介层和多个封装衬底。然后将SoC管芯100和HBM堆叠件108密封在密封剂122中。然后执行分割工艺以形成多个封装部件24。
图2B示出了图2A中所示结构的示意性立体图,其中示出了封装部件24、载体20、离型膜22和DAF 23。
图3A和图3B示出了载体20上方的核心框架26的放置。相应的工艺示出为图16中所示的工艺流程200中的工艺204。核心框架26也可以通过DAF 23附接到载体20。根据可选实施例,代替形成晶圆级DAF,所有SoC管芯100和HBM堆叠件108附接在DAF上,封装部件24和HBM堆叠件108中的每个可在其下方具有单独的DAF,并且单独的DAF可以具有与相应的上面的封装部件24和HBM堆叠件108相同的形状和相同的尺寸。类似地,当没有使用晶圆级DAF时,DAF也可以附接到核心框架26的底部以便粘附。如图3B所示,核心框架26可以形成矩形环,其中具有开口28,并且封装部件24位于开口28中。根据本发明的一些实施例,核心框架26具有类似的结构,并且可以由与有芯封装衬底中的核心框架相同的材料形成。然而,核心框架26与传统的有芯封装衬底的不同之处在于核心框架26在有芯封装衬底中没有镀通孔(PTH)。PTH是穿透核心电介质的导电(诸如金属,例如可以包括铜)管,并且用于在核心电介质的相对侧上传导电信号和电源。另外,核心框架26可以包括位于核心电介质32的相对侧上的金属板30,金属板30是其中没有孔和断裂的毯状金属板,该毯状金属板不同于传统有芯封装衬底中的图案化的RDL。金属板30具有提供结构支撑的功能,使得改善了核心框架26对翘曲的抵抗力。
根据本发明的一些实施例,核心电介质32包括玻璃纤维。核心电介质32还可包括环氧树脂、树脂、预浸料(包括环氧树脂、树脂和/或玻璃纤维)、树脂涂布的铜(RCC)、玻璃、模塑料、塑料(诸如聚乙烯基氯化物(PVC)、丙烯腈、丁二烯和苯乙烯(ABS)、聚丙烯(PP)、聚乙烯(PE)、聚苯乙烯(PS)、聚甲基丙烯酸甲酯(PMMA)、聚对苯二甲酸乙二醇酯(PET)、聚碳酸酯(PC)、聚苯硫醚(PPS)、柔性(聚酰亚胺)、它们的组合和它们的多层。金属板30可由铜、镍、钨等或它们的合金形成。根据一些实施例,金属板30之间不形成导电部件。
图11A和图11B示出了根据一些实施例的放置的封装部件24和核心框架26的顶视图。参考图11A,载体20是具有圆形顶视图形状的载体晶圆。离型膜22和DAF 23也可具有圆形顶视图形状。多个核心框架26被放置为包括多个行和多个列的阵列。核心框架26彼此间隔开。封装部件24放置在每个核心框架26的开口28中。
参考图11B,载体20具有矩形顶视图形状。离型膜22和DAF 23也可具有矩形顶视图形状。多个核心框架26被放置为包括多个行和多个列的阵列。核心框架26也彼此间隔开。封装部件24放置在每个核心框架26的开口28中。在整个说明书中,图11A中所示的两个载体20被称为晶圆形式,多个管芯/封装件可以放置在载体20上方。
根据本发明的可选实施例,代替放置核心框架26,将刚性环放置在载体20上方。刚性环可以由刚性材料形成,可以由金属形成(诸如铜、不锈钢等)或金属合金形成。根据一些实施例,刚性环可以由陶瓷形成。刚性环可以具有与核心框架26相同的尺寸和相同的顶视图形状。
接下来,将封装部件24和核心框架26密封在密封剂34中,如图4所示。相应的工艺示出为图16中所示的工艺流程200中的工艺206。密封剂34填充相邻核心框架26和开口28的剩余部分之间的间隙。密封剂34可包括模塑料、模制底部填充物、环氧树脂和/或树脂。密封剂34的顶面高于核心框架26和封装部件24的顶端。密封剂34可包括基底材料以及基底材料中的填料颗粒,基底材料可以是聚合物、树脂、环氧树脂等。填料颗粒可以是SiO2、Al2O3、二氧化硅等的介电颗粒,并且可以具有球形形状。而且,球形填料颗粒可具有多种不同的直径。
随后,执行诸如CMP工艺或机械研磨工艺的平坦化工艺以减薄密封剂34,直到暴露导电部件124。相应的工艺示出为图16中所示的工艺流程200中的工艺208。所得到的结构在图5中示出。由于平坦化工艺,核心框架26的顶端可以与导电部件124和密封剂34的顶面齐平(共面)或低于导电部件124和密封剂34的顶面。根据本发明的一些实施例,密封剂34包括与核心框架26重叠的层。根据本发明的可选实施例,在平坦化工艺之后,核心框架26的顶面暴露。
图6示出了前侧再分布结构36的形成,前侧再分布结构36包括多个介电层38、RDL40和金属焊盘42。金属焊盘42是前侧再分布结构36的顶面部分,并且暴露。相应的工艺示出为图16中所示的工艺流程200中的工艺210。根据本发明的一些实施例,介电层38由诸如PBO、聚酰亚胺等的聚合物形成。介电层38和RDL 40的相应层的形成工艺可以包括形成介电层38,以及然后图案化介电层38以形成通孔开口,下面的导电部件(诸如导电部件124)或下面的RDL 40通过该通孔开口暴露。根据介电层38由诸如PBO或聚酰亚胺的光敏材料形成的一些实施例,通孔开口的形成涉及使用光刻掩模(未示出)的曝光工艺和显影工艺。根据本发明的可选实施例,介电层38由诸如氮化硅、氧化硅等的无机介电材料形成,可以通过诸如化学气相沉积(CVD)工艺、原子层沉积(ALD)工艺、等离子体增强化学气相沉积(PECVD)工艺的沉积工艺或其他适用的沉积工艺形成。蚀刻沉积的介电层38以形成通孔开口。然后沉积晶种层作为毯状层。晶种层可以包括钛子层和钛子层上方的铜子层,晶种层可以通过例如物理气相沉积(PVD)形成。然后形成可以由光刻胶形成的镀掩模(未示出)并图案化镀掩模以露出下面的金属晶种层。执行镀工艺以镀金属材料。然后去除镀掩模,接着进行蚀刻工艺以去除未被镀材料覆盖的金属晶种层的部分。镀材料和下面的晶种层的剩余部分形成RDL40。
前侧再分布结构36可以包括五至九个或更多个RDL层40。根据本发明的一些实施例,RDL的线宽可以小于约3μm,或接近约2μm。因此,可以减少RDL层40的数量以满足路由要求。
如图6所示,作为所得封装件的一部分的核心框架26具有为所得封装件提供机械支撑的功能。由于核心框架26可以具有与封装部件24和存储器堆叠件108的厚度一样大的厚度,存储器堆叠件108具有多个堆叠管芯的厚度,因此核心框架26可以提供显著的机械支撑以减少翘曲,而不会导致电路径的不利增加,因为它不在电路径的中间。该效果类似于将有芯封装衬底的芯从路由路径移出到相同层级的封装部件24,使得封装衬底提供机械支撑的功能保持不变而不会导致电路径长度的增加。
图7示出了独立无源器件(IPD)44和电容器46在金属焊盘42上的接合。相应的工艺示出为图16中所示的工艺流程200中的工艺212。IPD 44可以是电感器、电阻器、电容器等。电容器46可以是多层陶瓷电容器(MLCC),并且可以用作电源存储器。如图7所示,使用存储的电源的电容器46和封装部件24之间的电路径很短,因为在电容器46和封装部件24之间没有芯。根据本发明的一些实施例,封装部件24是HPC封装件,性能要求很高。由于电容器46和封装部件24之间的电路径很短,电容器46可以提供功率以满足封装部件24的浪涌要求而没有显著的IR下降和延迟。
图8示出了电连接件48的形成。相应的工艺示出为图16中所示的工艺流程200中的工艺214。电连接件48的形成可包括将焊球放置在金属焊盘42的暴露部分上,然后,回流焊球,因此电连接件48是焊料区。根据本发明的可选实施例,电连接件48的形成包括执行镀步骤以在金属焊盘42上方形成焊料层,然后使镀的焊料层回流。电连接件48还可以包括非焊料金属柱,或非焊料金属柱上方的金属柱和焊料帽,金属柱和焊料帽也可以通过镀形成。在整个说明书中,DAF 23上面的结构和部件组合称为重建晶圆50。
接下来,将重建晶圆50放置在带(未示出)上,该带附接到切割框架(未示出)。根据本发明的一些实施例,电连接件48与带接触。接下来,重建晶圆50从载体20脱粘。根据本发明的一些实施例,为了使重建晶圆50脱粘,光束投射在离型膜22上,并且光穿透透明载体20。根据本发明的一些实施例,光包括激光束,激光束扫描通过整个离型膜22。
作为曝光(诸如激光扫描)的结果,载体20可以从DAF 23上抬起,因此重建晶圆50从载体20脱粘(拆卸)。在曝光期间,离型膜22响应于由曝光引入的热量而分解,允许载体20与上面的结构分离。然后,例如,通过等离子体清洁步骤去除离型膜22的残留物。也可以去除DAF 23。得到的重建晶圆50如图9所示。如果使用单独的DAF而不是毯状DAF。可以通过研磨去除单独的DAF,或者可以不去除单独的DAF。在这种情况下,核心框架26和封装部件24与相应的DAF重叠,DAF具有与上面的核心框架26和封装部件24相同的尺寸和顶视图形状。单独的DAF可以位于密封剂34中,并且可以具有与密封剂34的底面共面的底面。
然后可以在分割工艺中分割重建晶圆50,这可以使用模切工艺来执行。相应的工艺示出为图16中所示的工艺流程200中的工艺216。例如,刀片可用于锯开密封剂34和介电层38,以将重建晶圆50分成多个相同的封装件60,每个都具有根据一些实例所示的结构。在得到的封装件60中,核心框架26可以通过一些密封剂34与封装件60的最近边缘间隔开。
图10示出了示例封装件60。根据本发明的一些实施例,介电层38的厚度T1可以在约5μm和约100μm之间的范围内。核心框架26的厚度T2可以在约20μm和约2000μm之间的范围内。厚度T2也可以等于或略小于封装部件24的厚度(例如,大于约80%且小于100%),并且可以等于或略小于SoC管芯100和存储器堆叠件108的厚度。间隔S1是核心框架26的边缘与封装件60的相应最近边缘之间的间隔,可以在约10μm和约3000μm之间的范围内。核心框架26和封装部件24之间的间隔S2可以在约10μm和约3000μm之间的范围内。
图10进一步示出了封装件60在封装部件58上的接合以形成封装件61。相应的工艺示出为图16中所示的工艺流程200中的工艺218。根据本发明的一些实施例,封装部件58包括印刷电路板、另一个封装件等。根据本发明的一些实施例,金属环62通过粘合膜63附接到封装件60的顶面。相应的工艺示出为图16中所示的工艺流程200中的工艺220。金属环62可以提供进一步的机械支撑以减少封装件61的翘曲。根据可选实施例,没有附接金属环62。金属环62可具有与核心框架26(图3B)类似的形状。金属环62的外边缘可以与核心框架26的外边缘齐平。
图12至图15示出了根据本发明的可选实施例的封装件的形成中的中间阶段的截面图。除非另有说明,否则这些实施例中的部件的材料和形成工艺基本上与相同的部件相同,在图1、图2A、图2B、图3A、图3B和图4至图10所示的前述实施例中用相同的附图标记表示。因此,可以在前述实施例的讨论中找到关于图12至图15中所示的部件的形成工艺和材料的细节。这些实施例的初始步骤基本上与图1、图2A、图2B、图3A、图3B和图4至图8中所示的相同。应当理解,图12至图15中所示的工艺示出了将重建晶圆50锯开成封装件60的工艺。
参考图12,根据本发明的一些实施例,封装件60放置在载体64上,在载体64上方形成离型膜66和DAF 68。载体64、离型膜66和DAF 68可以由类似的材料形成,并且分别具有与载体20、离型膜22和DAF 23类似的功能和类似的形状。例如,载体64可以具有如图11A所示的圆形顶视图形状,或者具有如图11B所示的矩形顶视图形状。然后将多个封装件60(示出一个)放置在DAF 68上,并且可以放置成行和列。多个核心衬底70(示出一个)通过电连接件48接合到相应的下面的封装件60。
根据本发明的一些实施例,有芯封装衬底70可以包括核心电介质72,其中PTH 73穿透核心电介质层72。核心电介质72可以由与核心框架26中的核心电介质32类似的材料形成。PTH 73是金属管,其中介电区71填充由PTH 73围绕的区域。RDL 74和76形成在核心电介质72的相对侧上,并通过PTH 73互连。焊料区48穿透介电层71以接触RDL 74,并且一些RDL76通过介电层78中的开口暴露。根据本发明的一些实施例,每个有芯封装衬底70在核心电介质72每一侧(上方或下方)具有单层RDL。根据其他实施例,在核心电介质72的每一侧上存在多于一层的RDL。有芯封装衬底70的热膨胀系数(CTE)接近(并且可以高于)将接合在其上的封装部件58(图15)的CTE,并且低于前侧再分布结构36的CTE。因此,有芯封装衬底70用作封装部件58和前侧再分布结构36之间的缓冲器,以减少和吸收压力。
图13示出了根据一些实施例的上述形成的结构在密封剂82中的密封,密封剂82可以是模塑料、模制底部填充物等。可以通过曝光模制来执行密封,使得RDL 76不被密封剂82覆盖。密封剂82延伸到封装件60的侧壁。密封剂34和密封剂82可以由相同或不同类型的材料形成(包括基底材料的材料和其中的填料颗粒的材料)。无论材料的材料如何,由于密封剂34已被锯切和平坦化,因此锯切或平坦化的填料颗粒具有部分球形形状,因此密封剂34和密封剂82之间的界面是可区分的。
根据本发明的一些实施例,如图13所示,已经从重建晶圆50(图8)锯开的封装件60用于图12至图15所示的封装工艺中。根据其他实施例,代替将重建晶圆50锯开,将核心衬底70接合到重建晶圆50,然后进行密封工艺和锯切工艺。结果,密封剂82不会延伸到与封装件60相同的层级。相反,整个密封剂82位于封装件60上方。
图14示出了电连接件84的形成,电连接件84可以是焊料区、金属柱等。在DAF 68上方的所得结构被称为重建晶圆86。接下来,重建晶圆86从载体64脱粘。例如,通过投射光束来分解离型膜66。然后沿着划线88执行分割工艺,使得形成多个相同的封装件60’。
封装件60’中的一个在图15中示出。图15还示出了封装件60’与封装部件58的接合,封装部件58可以是印刷电路板、另一个封装件等。
在以上示出的实施例中,根据本发明的一些实施例讨论了一些工艺和部件,以形成三维(3D)封装件。还可以包括其他部件和工艺。例如,可以包括测试结构以帮助3D封装件或3DIC器件的验证测试。例如,测试结构可以包括形成在再分布层中或衬底上的测试焊盘,测试焊盘允许测试3D封装件或3DIC、使用探针和/或探针卡等。验证测试可以在中间结构以及最终结构上执行。另外,本文公开的结构和方法可以与测试方法结合使用,测试方法结合已知良好管芯的中间验证以增加产量并降低成本。
本发明的实施例具有一些有利特征。本发明的实施例适合于形成大的封装件,例如,具有80mm×80mm或更大的尺寸,大的封装件通常用于HPC应用中。大的封装件经常遭受严重的翘曲问题。通过将核心框架封装在与HPC封装件相同的层级处,核心框架的厚度不会影响电信号和电源的路由长度。例如,对于尺寸为80mm×80mm的封装件,翘曲可以从不使用核心框架的2434μm减小到使用核心框架的200μm。对于尺寸为53.5mm x 53.5mm的封装件,翘曲可以从不使用核心框架的942μm减小到使用核心框架的148μm。对于尺寸为44mm x44mm的封装件,翘曲可以从不使用核心框架的386μm减小到使用核心框架的139μm。由于核心框架与封装部件(诸如HPC封装件)放置在同一层级处,因此所得封装件的性能也不受核心框架的厚度的影响。而且,所得到的封装件可以由薄的和短的RDL形成,因此改善了封装件的信号完整性。
根据本发明的一些实施例,一种方法包括:将第一封装部件放置在载体上方,其中第一封装部件包括器件管芯;将核心框架放置在载体上方,其中核心框架形成环绕第一封装部件的环;将核心框架和第一封装部件密封在密封剂中;在核心框架和第一封装部件上方形成再分布线;以及在第一封装部件上方形成电连接件,电连接件通过再分布线电耦合到第一封装部件。在实施例中,该方法还包括在密封之后,平坦化密封剂,直到露出第一封装部件的导电部件。在实施例中,核心框架包括核心电介质以及位于核心电介质的相对侧上的金属板。在实施例中,核心框架没有穿透核心电介质的导电管。在实施例中,器件管芯包括SoC管芯以及将SoC管芯密封在其中的附加密封剂。在实施例中,该方法还包括执行管芯锯切以形成封装件,其中第一封装部件位于封装件中;以及通过电连接件将第二封装部件接合到封装件,其中第二封装部件包括:附加核心电介质;附加导电管,穿透附加核心电介质;以及附加再分布线,位于附加核心电介质的相对侧上,并且通过附加导电管互连。在实施例中,该方法还包括执行管芯锯切工艺以形成封装件,其中第一封装部件位于封装件中;以及将金属环附接到封装件。在实施例中,该方法还包括将无源器件接合到再分布线,其中无源器件与电连接件处于同一层级。
根据本发明的一些实施例,一种方法包括:将核心框架放置在载体上方,其中核心框架包括:核心电介质;以及第一金属板和第二金属板,位于核心电介质的相对侧上;将封装部件放置在核心框架的开口中和载体上方,其中封装部件包括器件管芯;将核心框架和封装部件密封在密封剂中;以及在核心框架和封装部件上方形成再分布线,其中再分布线电连接到封装部件,并且与核心框架电解耦。在实施例中,该方法还包括在再分布线上方形成焊料区,焊料区电耦合到再分布线,其中所有焊料区与核心框架电解耦。在实施例中,第一金属板和第二金属板是其中没有孔的毯状金属板。在实施例中,该方法还包括在密封之后执行平坦化工艺以露出封装部件的顶部导电部件,其中平坦化工艺在核心框架露出之前停止。在实施例中,该方法还包括在密封剂和封装部件上方形成介电层,介电层接触密封剂和封装部件,其中再分布线的底层延伸到介电层中,其中介电层通过密封剂的层与核心框架间隔开。在实施例中,该方法还包括执行管芯锯切工艺以形成包括封装部件、核心框架和密封剂的一部分的封装件,其中管芯锯切工艺不会切穿核心框架。
根据本发明的一些实施例,封装件包括:封装部件,封装部件中包括器件管芯;核心框架,形成环绕封装部件的环;密封剂,将封装部件和核心框架密封在其中;多个介电层,位于密封剂上方;以及再分布线,位于多个介电层中,其中再分布线电连接到封装部件,并且与核心框架电解耦。在实施例中,核心框架包括:核心电介质;以及第一金属板和第二金属板,位于核心电介质的相对侧上。在实施例中,第一金属板和第二金属板是其中没有孔的毯状金属板。在实施例中,核心框架没有穿透核心电介质的导电部件。在实施例中,核心电介质包括玻璃纤维。在实施例中,封装件还包括接合到封装部件的封装衬底,其中封装衬底包括附加核心电介质;附加导电管,穿透附加核心电介质;以及附加再分布线,位于附加核心电介质的相对侧上,并且通过附加导电管互连。
上面概述了若干实施例的特征,使得本领域人员可以更好地理解本发明的方面。本领域人员应该理解,它们可以容易地使用本发明作为基底来设计或修改用于实施与本文所介绍实施例相同的目的和/或实现相同优势的其它工艺和结构。本领域技术人员也应该意识到,这种等同构造并且不背离本发明的精神和范围,并且在不背离本发明的精神和范围的情况下,本文中它们可以做出多种变化、替换以及改变。
Claims (10)
1.一种形成封装件的方法,包括:
将第一封装部件放置在载体上方,其中,所述第一封装部件包括器件管芯;
将核心框架放置在所述载体上方,其中,所述核心框架形成环绕所述第一封装部件的环;
将所述核心框架和所述第一封装部件密封在密封剂中;
在所述核心框架和所述第一封装部件上方形成再分布线;以及
在所述第一封装部件上方形成电连接件,所述电连接件通过所述再分布线电耦合到所述第一封装部件。
2.根据权利要求1所述的方法,还包括在所述密封之后,平坦化所述密封剂,直到露出所述第一封装部件的导电部件。
3.根据权利要求1所述的方法,其中,所述核心框架包括核心电介质以及位于所述核心电介质的相对侧上的金属板。
4.根据权利要求3所述的方法,其中,所述核心框架没有穿透所述核心电介质的导电管。
5.根据权利要求1所述的方法,其中,所述器件管芯包括片上系统(SoC)管芯以及将所述片上系统管芯密封在其中的附加密封剂。
6.根据权利要求1所述的方法,还包括:
执行管芯锯切以形成封装件,其中,所述第一封装部件位于所述封装件中;以及
通过所述电连接件将第二封装部件接合到所述封装件,其中,所述第二封装部件包括:
附加核心电介质;
附加导电管,穿透所述附加核心电介质;以及
附加再分布线,位于所述附加核心电介质的相对侧上,并且通过所述附加导电管互连。
7.根据权利要求1所述的方法,还包括:
执行管芯锯切工艺以形成封装件,其中,所述第一封装部件位于所述封装件中;以及
将金属环附接到所述封装件。
8.根据权利要求1所述的方法,还包括将无源器件接合到所述再分布线,其中,所述无源器件与所述电连接件处于同一层级。
9.一种形成封装件的方法,包括:
将核心框架放置在载体上方,其中,所述核心框架包括:
核心电介质;以及
第一金属板和第二金属板,位于所述核心电介质的相对侧上;
将封装部件放置在所述核心框架的开口中和所述载体上方,其中,所述封装部件包括器件管芯;
将所述核心框架和所述封装部件密封在密封剂中;以及
在所述核心框架和所述封装部件上方形成再分布线,其中,所述再分布线电连接到所述封装部件,并且与所述核心框架电解耦。
10.一种封装件,包括:
封装部件,所述封装部件中包括器件管芯;
核心框架,形成环绕所述封装部件的环;
密封剂,将所述封装部件和所述核心框架密封在其中;
多个介电层,位于所述密封剂上方;以及
再分布线,位于所述多个介电层中,其中,所述再分布线电连接到所述封装部件,并且与所述核心框架电解耦。
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