CN112020764B - 半导体晶片的评价方法和半导体晶片的制造方法 - Google Patents
半导体晶片的评价方法和半导体晶片的制造方法 Download PDFInfo
- Publication number
- CN112020764B CN112020764B CN201980025203.7A CN201980025203A CN112020764B CN 112020764 B CN112020764 B CN 112020764B CN 201980025203 A CN201980025203 A CN 201980025203A CN 112020764 B CN112020764 B CN 112020764B
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- Prior art keywords
- semiconductor wafer
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- manufacturing
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 209
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 115
- 230000002093 peripheral effect Effects 0.000 claims abstract description 29
- 230000004069 differentiation Effects 0.000 claims abstract description 14
- 235000012431 wafers Nutrition 0.000 claims description 250
- 238000011156 evaluation Methods 0.000 claims description 92
- 238000005498 polishing Methods 0.000 claims description 18
- 238000002360 preparation method Methods 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 239000000523 sample Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 230000001066 destructive effect Effects 0.000 description 4
- 238000005070 sampling Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/255—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring radius of curvature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-077370 | 2018-04-13 | ||
| JP2018077370 | 2018-04-13 | ||
| PCT/JP2019/011954 WO2019198458A1 (ja) | 2018-04-13 | 2019-03-22 | 半導体ウェーハの評価方法および半導体ウェーハの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112020764A CN112020764A (zh) | 2020-12-01 |
| CN112020764B true CN112020764B (zh) | 2024-02-20 |
Family
ID=68163216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980025203.7A Active CN112020764B (zh) | 2018-04-13 | 2019-03-22 | 半导体晶片的评价方法和半导体晶片的制造方法 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP7040608B2 (de) |
| KR (1) | KR102518971B1 (de) |
| CN (1) | CN112020764B (de) |
| DE (1) | DE112019001948T5 (de) |
| TW (1) | TWI695156B (de) |
| WO (1) | WO2019198458A1 (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993537A (zh) * | 2019-12-20 | 2020-04-10 | 徐州鑫晶半导体科技有限公司 | 确定半导体晶圆边缘抛光形状的方法 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1535476A (zh) * | 2001-09-14 | 2004-10-06 | ��Խ�뵼����ʽ���� | 晶片的形状评价方法及晶片以及晶片的拣选方法 |
| CN1545723A (zh) * | 2002-06-13 | 2004-11-10 | 信越半导体株式会社 | 半导体晶片 |
| CN1599050A (zh) * | 2000-11-16 | 2005-03-23 | 信越半导体株式会社 | 晶片形状评价法、装置及器件制造法，晶片及晶片挑选法 |
| TW201332043A (zh) * | 2011-12-02 | 2013-08-01 | Kobe Steel Ltd | 貼合基板之旋轉偏移量計測裝置、貼合基板之旋轉偏移量計測方法及貼合基板之製造方法 |
| JP5318784B2 (ja) * | 2007-02-23 | 2013-10-16 | ルドルフテクノロジーズ インコーポレイテッド | エッジビード除去プロセスを含む、ウェハ製造モニタリング・システム及び方法 |
| KR101540569B1 (ko) * | 2013-12-24 | 2015-07-31 | 주식회사 엘지실트론 | 웨이퍼의 형상 분석 방법 및 장치 |
| JP2016517631A (ja) * | 2013-03-12 | 2016-06-16 | ケーエルエー−テンカー コーポレイション | 明視野差分干渉コントラストを用いた強化検査及び計測技法及びシステム |
| JP2016130738A (ja) * | 2016-02-12 | 2016-07-21 | 株式会社東京精密 | ウェーハ形状測定装置及び方法 |
| WO2018061337A1 (ja) * | 2016-09-29 | 2018-04-05 | 株式会社Sumco | シリコンウェーハの評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコンウェーハ |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9287158B2 (en) * | 2005-04-19 | 2016-03-15 | Ebara Corporation | Substrate processing apparatus |
| JP2007205864A (ja) * | 2006-02-01 | 2007-08-16 | Reitetsukusu:Kk | 基盤検査装置、及び、基盤検査方法 |
| WO2009054403A1 (ja) * | 2007-10-23 | 2009-04-30 | Shibaura Mechatronics Corporation | 円盤状基板の検査装置 |
| JP5621702B2 (ja) | 2011-04-26 | 2014-11-12 | 信越半導体株式会社 | 半導体ウェーハ及びその製造方法 |
-
2019
- 2019-03-22 JP JP2020513156A patent/JP7040608B2/ja active Active
- 2019-03-22 CN CN201980025203.7A patent/CN112020764B/zh active Active
- 2019-03-22 KR KR1020207032385A patent/KR102518971B1/ko active IP Right Grant
- 2019-03-22 DE DE112019001948.1T patent/DE112019001948T5/de active Pending
- 2019-03-22 WO PCT/JP2019/011954 patent/WO2019198458A1/ja active Application Filing
- 2019-04-09 TW TW108112293A patent/TWI695156B/zh active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1599050A (zh) * | 2000-11-16 | 2005-03-23 | 信越半导体株式会社 | 晶片形状评价法、装置及器件制造法，晶片及晶片挑选法 |
| CN1535476A (zh) * | 2001-09-14 | 2004-10-06 | ��Խ�뵼����ʽ���� | 晶片的形状评价方法及晶片以及晶片的拣选方法 |
| CN1545723A (zh) * | 2002-06-13 | 2004-11-10 | 信越半导体株式会社 | 半导体晶片 |
| JP5318784B2 (ja) * | 2007-02-23 | 2013-10-16 | ルドルフテクノロジーズ インコーポレイテッド | エッジビード除去プロセスを含む、ウェハ製造モニタリング・システム及び方法 |
| TW201332043A (zh) * | 2011-12-02 | 2013-08-01 | Kobe Steel Ltd | 貼合基板之旋轉偏移量計測裝置、貼合基板之旋轉偏移量計測方法及貼合基板之製造方法 |
| JP2016517631A (ja) * | 2013-03-12 | 2016-06-16 | ケーエルエー−テンカー コーポレイション | 明視野差分干渉コントラストを用いた強化検査及び計測技法及びシステム |
| KR101540569B1 (ko) * | 2013-12-24 | 2015-07-31 | 주식회사 엘지실트론 | 웨이퍼의 형상 분석 방법 및 장치 |
| JP2017503164A (ja) * | 2013-12-24 | 2017-01-26 | エルジー・シルトロン・インコーポレーテッド | ウェハー形状分析方法および装置 |
| JP2016130738A (ja) * | 2016-02-12 | 2016-07-21 | 株式会社東京精密 | ウェーハ形状測定装置及び方法 |
| WO2018061337A1 (ja) * | 2016-09-29 | 2018-04-05 | 株式会社Sumco | シリコンウェーハの評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコンウェーハ |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112020764A (zh) | 2020-12-01 |
| JP7040608B2 (ja) | 2022-03-23 |
| TW202004125A (zh) | 2020-01-16 |
| DE112019001948T5 (de) | 2021-01-21 |
| JPWO2019198458A1 (ja) | 2021-05-13 |
| KR102518971B1 (ko) | 2023-04-05 |
| WO2019198458A1 (ja) | 2019-10-17 |
| TWI695156B (zh) | 2020-06-01 |
| KR20200140893A (ko) | 2020-12-16 |
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